| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive model of PMOS NBTI degradation
|
Alam, M.A.
|
|
2005
|
45 |
1 |
p. 71-81
11 p.
|
artikel
|
| 2 |
A function-fit model for the hard breakdown I–V characteristics of ultra-thin oxides in MOS structures
|
Miranda, E.
|
|
2005
|
45 |
1 |
p. 175-178
4 p.
|
artikel
|
| 3 |
Analog IP blocks
|
Stojcev, Mile
|
|
2005
|
45 |
1 |
p. 195-196
2 p.
|
artikel
|
| 4 |
A thorough investigation of MOSFETs NBTI degradation
|
Huard, V.
|
|
2005
|
45 |
1 |
p. 83-98
16 p.
|
artikel
|
| 5 |
Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si〈100〉 systems
|
Fujieda, Shinji
|
|
2005
|
45 |
1 |
p. 57-64
8 p.
|
artikel
|
| 6 |
Degradation dynamics, recovery, and characterization of negative bias temperature instability
|
Ershov, M.
|
|
2005
|
45 |
1 |
p. 99-105
7 p.
|
artikel
|
| 7 |
Determination of the dice forward I–V characteristics of a power diode from a packaged device and its applications
|
Tan, Cher Ming
|
|
2005
|
45 |
1 |
p. 179-184
6 p.
|
artikel
|
| 8 |
Effect of microwave radiation on the properties of Ta2O5–Si microstructures
|
Atanassova, E.
|
|
2005
|
45 |
1 |
p. 123-135
13 p.
|
artikel
|
| 9 |
Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling
|
Lin, Y.C.
|
|
2005
|
45 |
1 |
p. 143-154
12 p.
|
artikel
|
| 10 |
Effects of electrical stressing in power VDMOSFETs
|
Stojadinovic, N.
|
|
2005
|
45 |
1 |
p. 115-122
8 p.
|
artikel
|
| 11 |
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits
|
Schlünder, Christian
|
|
2005
|
45 |
1 |
p. 39-46
8 p.
|
artikel
|
| 12 |
Efficient parametric yield optimization of VLSI circuit by uniform design sampling method
|
Jing, Ming-e
|
|
2005
|
45 |
1 |
p. 155-162
8 p.
|
artikel
|
| 13 |
Impact of NBTI and HCI on PMOSFET threshold voltage drift
|
Chaparala, Prasad
|
|
2005
|
45 |
1 |
p. 13-18
6 p.
|
artikel
|
| 14 |
Impact of negative bias temperature instability on digital circuit reliability
|
Reddy, Vijay
|
|
2005
|
45 |
1 |
p. 31-38
8 p.
|
artikel
|
| 15 |
Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well
|
Sun, Weifeng
|
|
2005
|
45 |
1 |
p. 185-190
6 p.
|
artikel
|
| 16 |
Layout-mixed-signal
|
Stojcev, Mile
|
|
2005
|
45 |
1 |
p. 197-198
2 p.
|
artikel
|
| 17 |
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET
|
Tan, Shyue Seng
|
|
2005
|
45 |
1 |
p. 19-30
12 p.
|
artikel
|
| 18 |
Modelling negative bias temperature instabilities in advanced p-MOSFETs
|
Houssa, M.
|
|
2005
|
45 |
1 |
p. 3-12
10 p.
|
artikel
|
| 19 |
Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films
|
Chen, J.
|
|
2005
|
45 |
1 |
p. 137-142
6 p.
|
artikel
|
| 20 |
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration
|
Hook, Terence B.
|
|
2005
|
45 |
1 |
p. 47-56
10 p.
|
artikel
|
| 21 |
[No title]
|
Brozek, Tomasz
|
|
2005
|
45 |
1 |
p. 1-2
2 p.
|
artikel
|
| 22 |
Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics
|
Tsujikawa, Shimpei
|
|
2005
|
45 |
1 |
p. 65-69
5 p.
|
artikel
|
| 23 |
Single resistance controlled oscillator using unity gain cells
|
Martínez, P.A. Martínez
|
|
2005
|
45 |
1 |
p. 191-194
4 p.
|
artikel
|
| 24 |
Test generation for technology-specific multi-faults based on detectable perturbations
|
Zemva, Andrej
|
|
2005
|
45 |
1 |
p. 163-173
11 p.
|
artikel
|
| 25 |
The impact of PMOST bias-temperature degradation on logic circuit reliability performance
|
Lee, Yung-Huei
|
|
2005
|
45 |
1 |
p. 107-114
8 p.
|
artikel
|
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