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104 gevonden resultaten
nr
titel
auteur
tijdschrift
jaar
jaarg.
afl.
pagina('s)
type
1
A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits
2004
44
9-11
p. 1885-1890
6 p.
artikel
2
A case study of ESD failures at random levels: analysis, explanation and solution
2004
44
9-11
p. 1823-1827
5 p.
artikel
3
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
2004
44
9-11
p. 1615-1619
5 p.
artikel
4
A laser-based instrument for measuring strain in electronic packages using coherent fibre-bundles
2004
44
9-11
p. 1693-1697
5 p.
artikel
5
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications
Busatto, G.
2004
44
9-11
p. 1443-1448
6 p.
artikel
6
Analysis of PowerMOSFET chips failed in thermal instability
2004
44
9-11
p. 1419-1424
6 p.
artikel
7
Analysis of the layout impact on electric fields in interconnect structures using finite element method
2004
44
9-11
p. 1867-1871
5 p.
artikel
8
Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions
2004
44
9-11
p. 1485-1490
6 p.
artikel
9
A new approach to the modeling of oxide breakdown on CMOS circuits
2004
44
9-11
p. 1519-1522
4 p.
artikel
10
A new structure to monitor electrical transients during programming of EEPROM memory cells
2004
44
9-11
p. 1745-1750
6 p.
artikel
11
An improved isothermal electromigration test for Cu-damascene characterization
2004
44
9-11
p. 1855-1860
6 p.
artikel
12
A Novel Automatic Polishing Technique for Micro-Controllers with 45° off Si <100> Rotation
2004
44
9-11
p. 1611-1614
4 p.
artikel
13
A study of an abnormal ESD failure mechanism and threshold voltage caused by ESD current zapping sequence
2004
44
9-11
p. 1829-1834
6 p.
artikel
14
Author index
2004
44
9-11
p. I-III
nvt p.
artikel
15
Automated Diagnosis and Probing Flow for Fast Fault Localization in IC
2004
44
9-11
p. 1553-1558
6 p.
artikel
16
Characterization and fatigue damage simulation in SAC solder joints
2004
44
9-11
p. 1287-1292
6 p.
artikel
17
Characterization and Modelling of Moisture Driven Interface Failures
2004
44
9-11
p. 1317-1322
6 p.
artikel
18
Characterization of self-heating effects in semiconductor resistors during transmission line pulses
2004
44
9-11
p. 1873-1878
6 p.
artikel
19
Comparative study of thermal cycling and thermal shocks tests on electronic components reliability
2004
44
9-11
p. 1343-1347
5 p.
artikel
20
Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics
2004
44
9-11
p. 1479-1483
5 p.
artikel
21
Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress
2004
44
9-11
p. 1461-1465
5 p.
artikel
22
Creep as a reliability problem in MEMS
2004
44
9-11
p. 1733-1738
6 p.
artikel
23
Current crowding in faulty MOSFET: optical and electrical investigation
2004
44
9-11
p. 1577-1581
5 p.
artikel
24
2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy
2004
44
9-11
p. 1681-1686
6 p.
artikel
25
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
2004
44
9-11
p. 1721-1726
6 p.
artikel
26
Effect of bonding pressure on reliability of flip chip joints on flexible and rigid substrates
2004
44
9-11
p. 1305-1310
6 p.
artikel
27
Effect of long and short Pb-free soldering profiles of IPC/JEDEC J-STD-020 on plastic SMD packages
2004
44
9-11
p. 1293-1297
5 p.
artikel
28
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics
2004
44
9-11
p. 1509-1512
4 p.
artikel
29
Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors
2004
44
9-11
p. 1631-1636
6 p.
artikel
30
Effects of hot carrier stress on the RF performance in SOI MOSFETs
2004
44
9-11
p. 1637-1642
6 p.
artikel
31
Electrostatic Effects on Semiconductor Tools
2004
44
9-11
p. 1787-1792
6 p.
artikel
32
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination
2004
44
9-11
p. 1473-1478
6 p.
artikel
33
Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET
2004
44
9-11
p. 1751-1755
5 p.
artikel
34
Evidence for source side injection hot carrier effects on lateral DMOS transistors
2004
44
9-11
p. 1621-1624
4 p.
artikel
35
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching
2004
44
9-11
p. 1455-1459
5 p.
artikel
36
Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD
2004
44
9-11
p. 1775-1780
6 p.
artikel
37
Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties
2004
44
9-11
p. 1497-1501
5 p.
artikel
38
Fail / recover / fail (F/R/F) failure mechanisms new trend
2004
44
9-11
p. 1571-1575
5 p.
artikel
39
Failure analysis of RFIC amplifiers
2004
44
9-11
p. 1599-1604
6 p.
artikel
40
Failure Analysis of RuO2 Thick Film Chip Resistors
2004
44
9-11
p. 1763-1767
5 p.
artikel
41
Failure analysis of vertical cavity surface emission laser diodes
2004
44
9-11
p. 1593-1597
5 p.
artikel
42
Femtosecond Laser Ablation for Backside Silicon Thinning
2004
44
9-11
p. 1605-1609
5 p.
artikel
43
Field Failure Mechanism Investigation of GaAs based HBT Power Amplifier Mmodule (PAM)
2004
44
9-11
p. 1393-1398
6 p.
artikel
44
First step in the reliability assessment of ultracapacitors used as power source in hybrid electric vehicles
2004
44
9-11
p. 1769-1773
5 p.
artikel
45
Full ball shear metrology as defect detection and analysis tool for solder joint reliability assessment on direct immersion gold technology
2004
44
9-11
p. 1281-1285
5 p.
artikel
46
Gallium Artefacts on FIB-milled Silicon Samples
2004
44
9-11
p. 1583-1588
6 p.
artikel
47
High reliable high power diode for welding applications
2004
44
9-11
p. 1437-1441
5 p.
artikel
48
Hot carrier aging degradation phenomena in GaN based MESFETs
2004
44
9-11
p. 1375-1380
6 p.
artikel
49
How to study delamination in plastic encapsulated devices
2004
44
9-11
p. 1311-1316
6 p.
artikel
50
Impact of the space environmental conditions on the reliability of a MEMS COTS based system
2004
44
9-11
p. 1739-1744
6 p.
artikel
51
Implementation of TRE systems into Emission Microscopes
2004
44
9-11
p. 1529-1534
6 p.
artikel
52
Influence of the thermo-mechanical residual state on the power assembly modellization
2004
44
9-11
p. 1331-1335
5 p.
artikel
53
Integrated thermo-mechanical design and qualification of wafer backend structures
2004
44
9-11
p. 1349-1354
6 p.
artikel
54
Interactive and non-destructive verification of sram-descrambling with laser
2004
44
9-11
p. 1669-1674
6 p.
artikel
55
Investigation of IGBT turn-on failure under high applied voltage operation
2004
44
9-11
p. 1431-1436
6 p.
artikel
56
Investigation of SEU sensitivity of Xilinx Virtex II FPGA by pulsed laser fault injections
2004
44
9-11
p. 1709-1714
6 p.
artikel
57
Light Emission From Small Technologies. Are Silicon Based Detectors Reaching Their Limits?
2004
44
9-11
p. 1715-1720
6 p.
artikel
58
Localization of FET Device Performance with Thermal Laser Stimulation
2004
44
9-11
p. 1699-1702
4 p.
artikel
59
Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations
2004
44
9-11
p. 1625-1629
5 p.
artikel
60
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors
2004
44
9-11
p. 1361-1368
8 p.
artikel
61
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications
2004
44
9-11
p. 1781-1786
6 p.
artikel
62
Magnetic Microscopy for IC Failure Analysis: Comparative Case Studies using SQUID, GMR and MTJ systems
2004
44
9-11
p. 1559-1563
5 p.
artikel
63
Metal migration in epoxy encapsulated ECL devices
2004
44
9-11
p. 1323-1330
8 p.
artikel
64
Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown
2004
44
9-11
p. 1491-1496
6 p.
artikel
65
MTF test system with AC based dynamic joule correction for electromigration tests on interconnects
2004
44
9-11
p. 1849-1854
6 p.
artikel
66
Multiple-time-instant 2D thermal mapping during a single ESD event
2004
44
9-11
p. 1793-1798
6 p.
artikel
67
New trends in the application of Scanning Probe Techniques in Failure Analysis
2004
44
9-11
p. 1541-1546
6 p.
artikel
68
Non destructive control of flip chip packages for space applications
2004
44
9-11
p. 1355-1359
5 p.
artikel
69
[No title]
Ciappa, Mauro
2004
44
9-11
p. xi-
1 p.
artikel
70
On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs
2004
44
9-11
p. 1643-1647
5 p.
artikel
71
On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques
2004
44
9-11
p. 1703-1708
6 p.
artikel
72
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise
2004
44
9-11
p. 1387-1392
6 p.
artikel
73
Overcoming Fault Test Coverage with Time-Resolved Emission (TRE) Probing
2004
44
9-11
p. 1535-1539
5 p.
artikel
74
Partial Discharge Failure Analysis of AIN Substrates for IGBT Modules
2004
44
9-11
p. 1425-1430
6 p.
artikel
75
Passivation schemes to improve power devices HAST robustness
2004
44
9-11
p. 1467-1471
5 p.
artikel
76
Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect
2004
44
9-11
p. 1503-1507
5 p.
artikel
77
Quantitative 3D reconstruction from BS imaging
2004
44
9-11
p. 1547-1552
6 p.
artikel
78
Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET’s
2004
44
9-11
p. 1649-1654
6 p.
artikel
79
Reliability Challenges with Ultra-Low k Interlevel Dielectrics
2004
44
9-11
p. 1835-1841
7 p.
artikel
80
Reliability determination of aluminium electrolytic capacitors by the mean of various methods. Application to the protection system of the LHC
2004
44
9-11
p. 1757-1762
6 p.
artikel
81
Reliability Evaluation and Redesign of LNA
2004
44
9-11
p. 1727-1732
6 p.
artikel
82
Reliability Improvement in Al Metallization: A Combination of Statistical Prediction and Failure Analytical Methodology
2004
44
9-11
p. 1843-1848
6 p.
artikel
83
Reliability Investigation of Gallium Nitride HEMT
2004
44
9-11
p. 1369-1373
5 p.
artikel
84
Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure
2004
44
9-11
p. 1513-1518
6 p.
artikel
85
Reliability of Low-Cost PCB Interconnections for Telecommunication Applications
2004
44
9-11
p. 1299-1304
6 p.
artikel
86
Reliability of power electronic devices against cosmic radiation-induced failure
2004
44
9-11
p. 1399-1406
8 p.
artikel
87
Reliability study of Power RF LDMOS for Radar Application
2004
44
9-11
p. 1449-1454
6 p.
artikel
88
Semiconductors in high temperature applications – a future trend in automotive industry
2004
44
9-11
p. 1413-1417
5 p.
artikel
89
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses
2004
44
9-11
p. 1523-1528
6 p.
artikel
90
Statistical simulation of gate dielectric wearout, leakage, and breakdown
2004
44
9-11
p. 1879-1884
6 p.
artikel
91
Study and validation of a power-rail ESD clamp in BiCMOS process with a reduced temperature dependency of its leakage current
2004
44
9-11
p. 1799-1804
6 p.
artikel
92
Study of influence of failure modes on lifetime distribution prediction of 1.55 μm DFB Laser diodes using weak drift of monitored parameters during ageing tests
2004
44
9-11
p. 1337-1342
6 p.
artikel
93
Study of the ESD defects impact on ICs reliability
2004
44
9-11
p. 1811-1815
5 p.
artikel
94
Study on electrostatic discharge (ESD) reliability improvement of ZnO-based multilayered chip varistor(MLV)
2004
44
9-11
p. 1565-1569
5 p.
artikel
95
Temperature-dependent breakdown and hot carrier stress of PHEMTs
2004
44
9-11
p. 1381-1385
5 p.
artikel
96
Testing of Ultra Low Voltage VLSI Chips using the Superconducting Single-Photon Detector (SSPD)
2004
44
9-11
p. 1663-1668
6 p.
artikel
97
The Failure Analysis of High Voltage Tolerance IO Buffer under ESD
2004
44
9-11
p. 1805-1810
6 p.
artikel
98
The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
2004
44
9-11
p. 1817-1822
6 p.
artikel
99
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure
2004
44
9-11
p. 1407-1411
5 p.
artikel
100
Time dependent dielectric breakdown in a low-k interlevel dielectric
2004
44
9-11
p. 1861-1865
5 p.
artikel
101
Time Resolved Photon Emission Processing Flow for IC Analysis
2004
44
9-11
p. 1655-1662
8 p.
artikel
102
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress
2004
44
9-11
p. 1687-1692
6 p.
artikel
103
Understanding the effects of NIR laser stimulation on NMOS transistor
2004
44
9-11
p. 1675-1680
6 p.
artikel
104
VCO phase noise improvement through direct passive component modification in the FIB
2004
44
9-11
p. 1589-1592
4 p.
artikel
104 gevonden resultaten
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