| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anomalous gate oxide conduction on isolation edges: analysis and process optimization
|
Ghetti, A.
|
|
2003
|
43 |
8 |
p. 1229-1235
7 p.
|
artikel
|
| 2 |
Anomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product
|
Lin, I-Cheng
|
|
2003
|
43 |
8 |
p. 1295-1301
7 p.
|
artikel
|
| 3 |
Calendar of forthcoming events
|
|
|
2003
|
43 |
8 |
p. I-IV
nvt p.
|
artikel
|
| 4 |
Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies
|
Bravaix, A.
|
|
2003
|
43 |
8 |
p. 1241-1246
6 p.
|
artikel
|
| 5 |
Circuit implications of gate oxide breakdown
|
Stathis, J.H.
|
|
2003
|
43 |
8 |
p. 1193-1197
5 p.
|
artikel
|
| 6 |
Comprehensive board-level solder joint reliability modeling and testing of QFN and PowerQFN packages
|
Tee, Tong Yan
|
|
2003
|
43 |
8 |
p. 1329-1338
10 p.
|
artikel
|
| 7 |
Contact resistance and adhesion performance of ACF interconnections to aluminum metallization
|
Zhang, J.H
|
|
2003
|
43 |
8 |
p. 1303-1310
8 p.
|
artikel
|
| 8 |
Critical reliability challenges in scaling SiO2-based dielectric to its limit
|
Wu, E.Y.
|
|
2003
|
43 |
8 |
p. 1175-1184
10 p.
|
artikel
|
| 9 |
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si:H layers
|
Garcı́a, R.
|
|
2003
|
43 |
8 |
p. 1281-1287
7 p.
|
artikel
|
| 10 |
Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors
|
Mondon, F.
|
|
2003
|
43 |
8 |
p. 1259-1266
8 p.
|
artikel
|
| 11 |
Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing
|
Ng, K.L.
|
|
2003
|
43 |
8 |
p. 1289-1293
5 p.
|
artikel
|
| 12 |
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors
|
Paskaleva, Albena
|
|
2003
|
43 |
8 |
p. 1253-1257
5 p.
|
artikel
|
| 13 |
Erratum to “An algorithm for calculating the lower confidence bounds of C PU and C PL with application to low-drop-out linear regulators” [Microelectronics Reliability 2003;43:495–502]
|
Pearn, W.L.
|
|
2003
|
43 |
8 |
p. 1349-
1 p.
|
artikel
|
| 14 |
Impact of gate stack process on conduction and reliability of 0.18 μm PMOSFET
|
Ghidini, G.
|
|
2003
|
43 |
8 |
p. 1221-1227
7 p.
|
artikel
|
| 15 |
Investigation of defect on copper bond pad surface in copper/low k process integration
|
Zheng, Y.S.
|
|
2003
|
43 |
8 |
p. 1311-1316
6 p.
|
artikel
|
| 16 |
Ionising radiation effects on MOSFET drain current
|
Cimino, S.
|
|
2003
|
43 |
8 |
p. 1247-1251
5 p.
|
artikel
|
| 17 |
MIM capacitance variation under electrical stress
|
Besset, C.
|
|
2003
|
43 |
8 |
p. 1237-1240
4 p.
|
artikel
|
| 18 |
New insights into the change of voltage acceleration and temperature activation of oxide breakdown
|
Ribes, G.
|
|
2003
|
43 |
8 |
p. 1211-1214
4 p.
|
artikel
|
| 19 |
[No title]
|
Ghibaudo, G.
|
|
2003
|
43 |
8 |
p. 1173-
1 p.
|
artikel
|
| 20 |
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs
|
Monsieur, F
|
|
2003
|
43 |
8 |
p. 1199-1202
4 p.
|
artikel
|
| 21 |
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM
|
Porti, M.
|
|
2003
|
43 |
8 |
p. 1203-1209
7 p.
|
artikel
|
| 22 |
Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability
|
Martin, Andreas
|
|
2003
|
43 |
8 |
p. 1215-1220
6 p.
|
artikel
|
| 23 |
Statistics of soft and hard breakdown in thin SiO2 gate oxides
|
Suñé, J.
|
|
2003
|
43 |
8 |
p. 1185-1192
8 p.
|
artikel
|
| 24 |
System-on-package: a broad perspective from system design to technology development
|
Zheng, Li-Rong
|
|
2003
|
43 |
8 |
p. 1339-1348
10 p.
|
artikel
|
| 25 |
The influence of Sn–Cu–Ni(Au) and Sn–Au intermetallic compounds on the solder joint reliability of flip chips on low temperature co-fired ceramic substrates
|
Duan, N.
|
|
2003
|
43 |
8 |
p. 1317-1327
11 p.
|
artikel
|
| 26 |
Ultra-high-density interconnection technology of three-dimensional packaging
|
Takahashi, Kenji
|
|
2003
|
43 |
8 |
p. 1267-1279
13 p.
|
artikel
|
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