nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A physical approach on SCOBIC investigation in VLSI
|
Beauchêne, T. |
|
2003 |
43 |
1 |
p. 173-177 5 p. |
artikel |
2 |
A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization
|
Ruprecht, Michael |
|
2003 |
43 |
1 |
p. 17-41 25 p. |
artikel |
3 |
Calendar for forthcoming events
|
|
|
2003 |
43 |
1 |
p. I-VI nvt p. |
artikel |
4 |
Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3
|
Forster, S. |
|
2003 |
43 |
1 |
p. 89-98 10 p. |
artikel |
5 |
Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 °C
|
Jelenkovic, Emil V |
|
2003 |
43 |
1 |
p. 49-55 7 p. |
artikel |
6 |
Early reliability assessment by using deep censoring
|
Schafft, Harry A. |
|
2003 |
43 |
1 |
p. 1-16 16 p. |
artikel |
7 |
Effect of nitridation on the reliability of thick gate oxides
|
Wu, C.-T. |
|
2003 |
43 |
1 |
p. 43-47 5 p. |
artikel |
8 |
Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors
|
Hastas, N.A. |
|
2003 |
43 |
1 |
p. 57-60 4 p. |
artikel |
9 |
Electrical qualification of new ultrathin integration techniques
|
Cazarré, A. |
|
2003 |
43 |
1 |
p. 111-115 5 p. |
artikel |
10 |
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
|
Or, David C.T. |
|
2003 |
43 |
1 |
p. 163-166 4 p. |
artikel |
11 |
Impact of probing procedure on flip chip reliability
|
Chen, Kuo-Ming |
|
2003 |
43 |
1 |
p. 123-130 8 p. |
artikel |
12 |
Implant dose monitoring by MOS C–V measurement
|
Sorge, Roland |
|
2003 |
43 |
1 |
p. 167-171 5 p. |
artikel |
13 |
Influences of the moisture absorption on PBGA package’s warpage during IR reflow process
|
Chien, Chi-Hui |
|
2003 |
43 |
1 |
p. 131-139 9 p. |
artikel |
14 |
LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits
|
Vashchenko, V. |
|
2003 |
43 |
1 |
p. 61-69 9 p. |
artikel |
15 |
Modeling facet heating in ridge lasers
|
Romo, G. |
|
2003 |
43 |
1 |
p. 99-110 12 p. |
artikel |
16 |
Neural net analysis of integrated circuit yield dependence on CMOS process control parameters
|
Karilahti, M. |
|
2003 |
43 |
1 |
p. 117-121 5 p. |
artikel |
17 |
Power p–i–n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery
|
Cova, P. |
|
2003 |
43 |
1 |
p. 81-87 7 p. |
artikel |
18 |
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology
|
Trémouilles, D. |
|
2003 |
43 |
1 |
p. 71-79 9 p. |
artikel |
19 |
Thermomechanical deformation of a bimaterial plate––as applied to laminate IC assemblies
|
Moore, Thomas D. |
|
2003 |
43 |
1 |
p. 155-162 8 p. |
artikel |
20 |
Wirebonding at higher ultrasonic frequencies: reliability and process implications
|
Charles Jr., H.K |
|
2003 |
43 |
1 |
p. 141-153 13 p. |
artikel |