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                             110 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acoustic analysis of an assembly: Structural identification by signal processing (wavelets) Augereau, J.
 2002
 42 9-11 p. 1517-1522
6 p.
 artikel
2 A Custom-designed automatic measurement system for acquisition and management of reliability data Catelani, M.
 2002
 42 9-11 p. 1381-1384
4 p.
 artikel
3 Adhesive die attach for power application: Performance and reliability in plastic package Tiziani, R.
 2002
 42 9-11 p. 1611-1616
6 p.
 artikel
4 Analyses on NVM Circuitry Delay Induced by Source & Drain BF2 Implant Caprara, P.
 2002
 42 9-11 p. 1509-1511
3 p.
 artikel
5 Analysis of etched cantilevers Enzler, A.
 2002
 42 9-11 p. 1807-1809
3 p.
 artikel
6 Analysis of the effect of the gate oxide breakdown on SRAM stability Rodrı́guez, R.
 2002
 42 9-11 p. 1445-1448
4 p.
 artikel
7 An automated lifetest equipment for optical emitters Giglio, M.
 2002
 42 9-11 p. 1311-1315
5 p.
 artikel
8 A New sub-micro probing technique for failure analysis in integrated circuits Faure, D.
 2002
 42 9-11 p. 1767-1770
4 p.
 artikel
9 A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors Ciappa, M.
 2002
 42 9-11 p. 1653-1658
6 p.
 artikel
10 Application of Acoustic Frequency Domain Imaging for the Evaluation of Advanced Micro Electronic Packages Semmens, Janet E.
 2002
 42 9-11 p. 1735-1740
6 p.
 artikel
11 A reliability study for a submarine compression application Ceschinib , G.
 2002
 42 9-11 p. 1377-1380
4 p.
 artikel
12 A specimen-current branching approach for FA of long Electromigration test lines Caprile, C.
 2002
 42 9-11 p. 1715-1718
4 p.
 artikel
13 A study of advanced layout verification to prevent leakage current failure during power down mode operation Songa , Yong-Ha
 2002
 42 9-11 p. 1385-1388
4 p.
 artikel
14 Author index 2002
 42 9-11 p. I-III
nvt p.
 artikel
15 Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices Beaudoin, F.
 2002
 42 9-11 p. 1581-1585
5 p.
 artikel
16 Backside Failure Analysis of GaAs ICs after ESD tests Meneghesso, G.
 2002
 42 9-11 p. 1293-1298
6 p.
 artikel
17 Backside Hot Spot Detection Using Liquid Crystal Microscopy Crepel, O.
 2002
 42 9-11 p. 1741-1746
6 p.
 artikel
18 CAD navigation system, for backside waveform probing of CMOS devices Miura, Katsuyoshi
 2002
 42 9-11 p. 1679-1684
6 p.
 artikel
19 Case study of a technology transfer causing ESD problems Zängla , F.
 2002
 42 9-11 p. 1275-1280
6 p.
 artikel
20 Characterization of Trench MOS Gate Structures Utilizing Photon Emission Microscopy Usui, Masanori
 2002
 42 9-11 p. 1647-1652
6 p.
 artikel
21 Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection Nazarov, A.N.
 2002
 42 9-11 p. 1461-1464
4 p.
 artikel
22 Chip on flex attachment with thermoplastic ACF for RFID applications Frisk, L.
 2002
 42 9-11 p. 1559-1562
4 p.
 artikel
23 Comprehensive failure analysis of leakage faults in bipolar transistors Domengès, B.
 2002
 42 9-11 p. 1449-1452
4 p.
 artikel
24 Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures Blasco, X.
 2002
 42 9-11 p. 1513-1516
4 p.
 artikel
25 Contactless current and voltage measurements in integrated circuits by using a needle sensor Neinhüs, M.
 2002
 42 9-11 p. 1695-1700
6 p.
 artikel
26 Contact resistivity instability in embedded SRAM memory Mervic, A.
 2002
 42 9-11 p. 1365-1368
4 p.
 artikel
27 Contribution to ageing simulation of complex analogue circuit using VHDL-AMS behavioural modelling language Mongellaz, B.
 2002
 42 9-11 p. 1353-1358
6 p.
 artikel
28 Degradation Based Long-Term Reliability Assessment for Electronic Components in Submarine Applications Lista, V.
 2002
 42 9-11 p. 1389-1392
4 p.
 artikel
29 Degradation mechanisms induced by thermal and bias stresses in InP HEMTs Labat, N.
 2002
 42 9-11 p. 1575-1580
6 p.
 artikel
30 Dependence of Post-Breakdown Conduction on Gate Oxide Thickness Lombardo, S.
 2002
 42 9-11 p. 1481-1484
4 p.
 artikel
31 Device Simulation and Backside Laser Interferometry––Powerful Tools for ESD Protection Development Stadler, W.
 2002
 42 9-11 p. 1267-1274
8 p.
 artikel
32 Double-cantilever device for Atomic Force Microscopy in dynamic noncontact-mode Müllera , A.-D.
 2002
 42 9-11 p. 1685-1688
4 p.
 artikel
33 Editorial Fantini, Fausto
 2002
 42 9-11 p. 1249-
1 p.
 artikel
34 Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis Gireta , C.
 2002
 42 9-11 p. 1723-1727
5 p.
 artikel
35 Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides Rafı́, J.M.
 2002
 42 9-11 p. 1501-1504
4 p.
 artikel
36 Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Pogany, D.
 2002
 42 9-11 p. 1673-1677
5 p.
 artikel
37 ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology Sponton, L.
 2002
 42 9-11 p. 1303-1306
4 p.
 artikel
38 Evaluation methodology of thin dielectrics for non-volatile memory application Ghidini, G.
 2002
 42 9-11 p. 1473-1480
8 p.
 artikel
39 Evaluation of a micropackaging analysis technique by highfrequency microwaves Duchamp, G.
 2002
 42 9-11 p. 1551-1554
4 p.
 artikel
40 Evaluation of lead-free soldering for automotive applications Guédon, Alexandrine
 2002
 42 9-11 p. 1555-1558
4 p.
 artikel
41 Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse Galya , P.
 2002
 42 9-11 p. 1299-1302
4 p.
 artikel
42 Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions Blaho, M.
 2002
 42 9-11 p. 1281-1286
6 p.
 artikel
43 Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology Petersen, R.
 2002
 42 9-11 p. 1359-1363
5 p.
 artikel
44 Failure mechanisms of adhesive flip chip joints Seppälä, A.
 2002
 42 9-11 p. 1547-1550
4 p.
 artikel
45 Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling Nguyen, H.V.
 2002
 42 9-11 p. 1415-1420
6 p.
 artikel
46 Fast thermal fatigue on top metal layer of power devices Russo, Sebastiano
 2002
 42 9-11 p. 1617-1622
6 p.
 artikel
47 Gate oxide Reliability assessment optimization Monsieur, F.
 2002
 42 9-11 p. 1505-1508
4 p.
 artikel
48 Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability Curro, G.
 2002
 42 9-11 p. 1659-1662
4 p.
 artikel
49 High-field step-stress and long term stability of PHEMTs with different gate and recess lengths Cova, P.
 2002
 42 9-11 p. 1587-1592
6 p.
 artikel
50 High-resolution SILC measurements of thin SiO2 at ultra low voltages Aresu, S.
 2002
 42 9-11 p. 1485-1489
5 p.
 artikel
51 How reliable are reliability tests? Tielemans, L.
 2002
 42 9-11 p. 1339-1345
7 p.
 artikel
52 Hydrogen-related reliability issues for advanced microelectronics Fleetwood, D.M.
 2002
 42 9-11 p. 1397-1403
7 p.
 artikel
53 Imaging and Material Analysis from Sputter-Induced Light Emission Using Coaxial Ion-Photon Column Tsao, Chun-Cheng
 2002
 42 9-11 p. 1667-1672
6 p.
 artikel
54 Influence of the turn-on mechanism on TRIACs’ reliability: di/dt thermal fatigue study in Q1 compared to Q2 Moreau, S.
 2002
 42 9-11 p. 1663-1666
4 p.
 artikel
55 Inversion of degradation direction of n-channel MOS-FETs in off-state operation Muehlhoff, A.
 2002
 42 9-11 p. 1453-1456
4 p.
 artikel
56 Investigation of dynamic disturbance quantities in piezoresistive silicon sensors Hoa, Phan L.P.
 2002
 42 9-11 p. 1819-1822
4 p.
 artikel
57 Investigation of Sensitivity Improvement on Passive Voltage Contrast for Defect Isolation Lee, Jon C.
 2002
 42 9-11 p. 1707-1710
4 p.
 artikel
58 Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM) Lee, T.H.
 2002
 42 9-11 p. 1711-1714
4 p.
 artikel
59 IR confocal laser microscopy for MEMS Technological Evaluation Lellouchi, D.
 2002
 42 9-11 p. 1815-1817
3 p.
 artikel
60 Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis Bicaı̈is-Lépinay, N.
 2002
 42 9-11 p. 1747-1752
6 p.
 artikel
61 Magnetic field measurements for Non Destructive Failure Analysis Crépel, O.
 2002
 42 9-11 p. 1763-1766
4 p.
 artikel
62 Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging Polyakov, A.
 2002
 42 9-11 p. 1783-1788
6 p.
 artikel
63 Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs Stojadinovic, N.
 2002
 42 9-11 p. 1465-1468
4 p.
 artikel
64 Microscopic aspects of defect generation in SiO2 Feruglio, Ruggero
 2002
 42 9-11 p. 1427-1432
6 p.
 artikel
65 Negative bias temperature stress on low voltage p-channel DMOS transistors and the role of nitrogen Gamerith, S.
 2002
 42 9-11 p. 1439-1443
5 p.
 artikel
66 New qualification approach for optoelectronic components Goudard, J.-L.
 2002
 42 9-11 p. 1307-1310
4 p.
 artikel
67 Non-destructive high temperature characterisation of high-voltage IGBTs Busatto, G.
 2002
 42 9-11 p. 1635-1640
6 p.
 artikel
68 Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown Reiner, Joachim C.
 2002
 42 9-11 p. 1753-1757
5 p.
 artikel
69 On the reliability of instruments for environmental monitoring: some practical considerations Battista, P.
 2002
 42 9-11 p. 1393-1396
4 p.
 artikel
70 Optical diagnosis of excess IDDQ in low power CMOS circuits Stellari, Franco
 2002
 42 9-11 p. 1689-1694
6 p.
 artikel
71 Origin of hot carrier degradation in advanced nMOSFET devices Cretu, B.
 2002
 42 9-11 p. 1405-1408
4 p.
 artikel
72 Passive optical components: from degradation data to reliability assessment – preliminary results Tomasi, T.
 2002
 42 9-11 p. 1333-1338
6 p.
 artikel
73 Post-breakdown characterization in thin gate oxides Viganò, E.
 2002
 42 9-11 p. 1491-1496
6 p.
 artikel
74 Process Control and Failure Analysis Implementation for THz Schottky-based components Ichizli, V.
 2002
 42 9-11 p. 1593-1596
4 p.
 artikel
75 Properties of solders and their fatigue in power modules Lefranc, G.
 2002
 42 9-11 p. 1641-1646
6 p.
 artikel
76 Pseudo Time-Variant parameters in centrifugal compressor availability studies by means of Markov models Mugnaini, M.
 2002
 42 9-11 p. 1373-1376
4 p.
 artikel
77 Reliability analysis of CMOS MEMS structures obtained by Front Side Bulk Micromachining Dardalhon, M.
 2002
 42 9-11 p. 1777-1782
6 p.
 artikel
78 Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation Castellazzi, A.
 2002
 42 9-11 p. 1605-1610
6 p.
 artikel
79 Reliability Defect Monitoring with Thermal Laser Stimulation: Biased Versus Unbiased Beaudoin, F.
 2002
 42 9-11 p. 1729-1734
6 p.
 artikel
80 Reliability improvement of high value doped polysilicon-based resistors Carvou, E.
 2002
 42 9-11 p. 1369-1372
4 p.
 artikel
81 Reliability investigations on HBV using pulsed electrical stress Sydlo, C.
 2002
 42 9-11 p. 1563-1568
6 p.
 artikel
82 Reliability of Au/Al bonding in plastic packages for high temperature (200°C) and high current applications Passagrilli, C.
 2002
 42 9-11 p. 1523-1528
6 p.
 artikel
83 Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers Di Giacomo, Giulio
 2002
 42 9-11 p. 1541-1546
6 p.
 artikel
84 Reliability of MEMS - a methodical approach Müller-Fiedler, R.
 2002
 42 9-11 p. 1771-1776
6 p.
 artikel
85 Reliability of Metamorphic HEMTs for Power Applications Dammann, M.
 2002
 42 9-11 p. 1569-1573
5 p.
 artikel
86 Reliability of optical connectors - Humidity behavior of the adhesive Caloz, François
 2002
 42 9-11 p. 1323-1328
6 p.
 artikel
87 Reliability of polysilicon microstructures: in situ test benches Millet, Olivier
 2002
 42 9-11 p. 1795-1800
6 p.
 artikel
88 Reliability of power transistors against application driven temperature swings Gopalan, Sudha
 2002
 42 9-11 p. 1623-1628
6 p.
 artikel
89 Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly Sivakumar, Mohandass
 2002
 42 9-11 p. 1535-1540
6 p.
 artikel
90 Reliability Problems of Passive Optical Devices and Modules after Mechanical, Thermal and Humidity Testing Duerr, Klaus
 2002
 42 9-11 p. 1329-1332
4 p.
 artikel
91 Reliability study of the assembly of a large EGA on a build up board using thermo-mechanical simulations Guilbault, P.
 2002
 42 9-11 p. 1529-1533
5 p.
 artikel
92 Reliability tests on WDM filters Vanzi, M.
 2002
 42 9-11 p. 1317-1321
5 p.
 artikel
93 Reliable power electronics for automotive applications Seliger, N.
 2002
 42 9-11 p. 1597-1604
8 p.
 artikel
94 Scanning Thermal Microscopy in Microsystem Reliability Analysis Szeloch, R.F.
 2002
 42 9-11 p. 1719-1722
4 p.
 artikel
95 Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement Roy, D.
 2002
 42 9-11 p. 1497-1500
4 p.
 artikel
96 Series resistance degradation due to NBTI in PMOSFET Krishnan, Mahesh S.
 2002
 42 9-11 p. 1433-1438
6 p.
 artikel
97 Simulated SAM A-scans on multilayer MEMS components Janting, Jakob
 2002
 42 9-11 p. 1811-1814
4 p.
 artikel
98 Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime Nguyen, H.V.
 2002
 42 9-11 p. 1421-1425
5 p.
 artikel
99 Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction Stangoni, M.
 2002
 42 9-11 p. 1701-1706
6 p.
 artikel
100 Simulation of failure time distributions of metal lines under electromigration Carriero, M.R.
 2002
 42 9-11 p. 1469-1472
4 p.
 artikel
101 Simulative prediction of the resistance change due to electromigration induced void evolution Ceric, Hajdin
 2002
 42 9-11 p. 1457-1460
4 p.
 artikel
102 Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force Microscope Hartmann, C.
 2002
 42 9-11 p. 1759-1762
4 p.
 artikel
103 Statistical aspects of the degradation of LDD nMOSFETs Andries, E.
 2002
 42 9-11 p. 1409-1413
5 p.
 artikel
104 Techniques to study the reliability of metal RF MEMS capacitive switches De Wolf, I.
 2002
 42 9-11 p. 1789-1794
6 p.
 artikel
105 The IEEE standards on reliability program and reliability prediction methods for electronic equipment Pechta , Michael
 2002
 42 9-11 p. 1259-1266
8 p.
 artikel
106 The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress Sowariraj, M.S.B.
 2002
 42 9-11 p. 1287-1292
6 p.
 artikel
107 The Reliability of New Generation Power MOSFETs in Radiation Environment Velardia , F.
 2002
 42 9-11 p. 1629-1634
6 p.
 artikel
108 Trend of CMOS downsizing and its reliability Iwaia , H.
 2002
 42 9-11 p. 1251-1258
8 p.
 artikel
109 True constant temperature MTF test system for the characterization of electromigration of thick Cu interconnection lines Scandurra, G.
 2002
 42 9-11 p. 1347-1351
5 p.
 artikel
110 Yield Evaluation of Gold Sensor Electrodes Used for Fully Electronic DNA Detection Arrays on CMOS Frey, A.
 2002
 42 9-11 p. 1801-1806
6 p.
 artikel
                             110 gevonden resultaten
 
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