no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Calendar
|
|
|
2001 |
41 |
8 |
p. I-V nvt p. |
article |
2 |
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
|
Würfl, Joachim |
|
2001 |
41 |
8 |
p. 1103-1108 6 p. |
article |
3 |
Developments of new concept analytical instruments for failure analyses of sub-100 nm devices
|
Mitsui, Yasuhiro |
|
2001 |
41 |
8 |
p. 1171-1183 13 p. |
article |
4 |
Editorial
|
Anderson, Wallace T |
|
2001 |
41 |
8 |
p. 1101- 1 p. |
article |
5 |
Electrical probing of deep sub-micron integrated circuits using scanning probes
|
Krieg, K |
|
2001 |
41 |
8 |
p. 1185-1191 7 p. |
article |
6 |
Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system
|
Murayama, Hide |
|
2001 |
41 |
8 |
p. 1265-1272 8 p. |
article |
7 |
Failure analysis from the back side of a die
|
Liebert, Silke |
|
2001 |
41 |
8 |
p. 1193-1201 9 p. |
article |
8 |
Global fault localization using induced voltage alteration
|
Cole Jr, Edward I |
|
2001 |
41 |
8 |
p. 1145-1159 15 p. |
article |
9 |
Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability
|
Paine, B.M |
|
2001 |
41 |
8 |
p. 1115-1122 8 p. |
article |
10 |
Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique
|
Koyama, T |
|
2001 |
41 |
8 |
p. 1243-1253 11 p. |
article |
11 |
Location of defective cells in HBT power amplifier arrays using IR emission microscopy
|
Dai, Peter |
|
2001 |
41 |
8 |
p. 1137-1141 5 p. |
article |
12 |
Mechanism of pre-annealing effect on electromigration immunity of Al–Cu line
|
Mazumder, M.K |
|
2001 |
41 |
8 |
p. 1259-1264 6 p. |
article |
13 |
[No title]
|
Barton, Daniel L |
|
2001 |
41 |
8 |
p. 1143-1144 2 p. |
article |
14 |
Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober
|
Hashimoto, Chisato |
|
2001 |
41 |
8 |
p. 1203-1209 7 p. |
article |
15 |
Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study
|
Anderson, W.T |
|
2001 |
41 |
8 |
p. 1109-1113 5 p. |
article |
16 |
RF modeling approach to determining end-of-life reliability for InP-based HBTs
|
Thomas III, S |
|
2001 |
41 |
8 |
p. 1129-1135 7 p. |
article |
17 |
Scanning probe microscopy in semiconductor failure analysis
|
Ebersberger, B |
|
2001 |
41 |
8 |
p. 1231-1236 6 p. |
article |
18 |
Scanning SQUID microscopy for current imaging
|
Knauss, L.A. |
|
2001 |
41 |
8 |
p. 1211-1229 19 p. |
article |
19 |
Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines
|
Ji, Yuan |
|
2001 |
41 |
8 |
p. 1255-1258 4 p. |
article |
20 |
Single contact optical beam induced currents
|
Chin, J.M |
|
2001 |
41 |
8 |
p. 1237-1242 6 p. |
article |
21 |
Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices
|
De Wolf, Ingrid |
|
2001 |
41 |
8 |
p. 1161-1169 9 p. |
article |
22 |
Volume impacts on GaAs reliability improvement
|
Roesch, William J |
|
2001 |
41 |
8 |
p. 1123-1127 5 p. |
article |