no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Body effect induced wear-out acceleration in ultra-thin oxides
|
Bruyère, S. |
|
2001 |
41 |
7 |
p. 1031-1034 4 p. |
article |
2 |
Characterising the surface roughness of AFM grown SiO2 on Si
|
Hill, D. |
|
2001 |
41 |
7 |
p. 1077-1079 3 p. |
article |
3 |
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics
|
Lucovsky, G. |
|
2001 |
41 |
7 |
p. 937-945 9 p. |
article |
4 |
Dielectric breakdown distributions for void containing silicon substrates
|
Falster, R. |
|
2001 |
41 |
7 |
p. 967-971 5 p. |
article |
5 |
Direct tunnelling models for circuit simulation
|
O'Sullivan, P. |
|
2001 |
41 |
7 |
p. 951-957 7 p. |
article |
6 |
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm)
|
Clerc, R. |
|
2001 |
41 |
7 |
p. 1027-1030 4 p. |
article |
7 |
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides
|
Jank, M.P.M |
|
2001 |
41 |
7 |
p. 987-990 4 p. |
article |
8 |
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide
|
Osten, H.J. |
|
2001 |
41 |
7 |
p. 991-994 4 p. |
article |
9 |
FeRAM technology for high density applications
|
Mikolajick, T. |
|
2001 |
41 |
7 |
p. 947-950 4 p. |
article |
10 |
Flat band voltage shift and oxide properties after rapid thermal annealing
|
O'Sullivan, B.J. |
|
2001 |
41 |
7 |
p. 1053-1056 4 p. |
article |
11 |
High field stress at and above room temperature in 2.3 nm thick oxides
|
Zander, D. |
|
2001 |
41 |
7 |
p. 1023-1026 4 p. |
article |
12 |
Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization
|
Weber, D |
|
2001 |
41 |
7 |
p. 1081-1083 3 p. |
article |
13 |
Impact of the As dose in 0.35 μ m EEPROM technology: characterization and modeling
|
Galbiati, N. |
|
2001 |
41 |
7 |
p. 999-1002 4 p. |
article |
14 |
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films
|
Rodrı́guez, R. |
|
2001 |
41 |
7 |
p. 1011-1013 3 p. |
article |
15 |
In memory of Pierre Rossel
|
Charitat, Georges |
|
2001 |
41 |
7 |
p. 933-934 2 p. |
article |
16 |
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
|
Zhao, C. |
|
2001 |
41 |
7 |
p. 995-998 4 p. |
article |
17 |
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope
|
Porti, M |
|
2001 |
41 |
7 |
p. 1041-1044 4 p. |
article |
18 |
Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETs
|
Kumar, A. |
|
2001 |
41 |
7 |
p. 1049-1051 3 p. |
article |
19 |
Nitrogen implantations for rapid thermal oxinitride layers
|
Stadler, A. |
|
2001 |
41 |
7 |
p. 977-980 4 p. |
article |
20 |
[No title]
|
Martin, Andreas |
|
2001 |
41 |
7 |
p. 935- 1 p. |
article |
21 |
On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides
|
Zahlmann-Nowitzki, J.-W |
|
2001 |
41 |
7 |
p. 1067-1069 3 p. |
article |
22 |
Optical and electrical characterization of the electron beam gun evaporated TiO2 film
|
Mikhelashvili, V |
|
2001 |
41 |
7 |
p. 1057-1061 5 p. |
article |
23 |
Optimization of WSi2 by SiH4 CVD: impact on oxide quality
|
Brazzelli, D. |
|
2001 |
41 |
7 |
p. 1003-1006 4 p. |
article |
24 |
Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation
|
Lanchava, B. |
|
2001 |
41 |
7 |
p. 1097-1100 4 p. |
article |
25 |
Plasma charging damage mechanisms and impact on new technologies
|
Reimbold, G. |
|
2001 |
41 |
7 |
p. 959-965 7 p. |
article |
26 |
Pseudopotential study of PrO2 and HfO2 in fluorite phase
|
Da̧browski, J. |
|
2001 |
41 |
7 |
p. 1093-1096 4 p. |
article |
27 |
Quality assessment of thin oxides using constant and ramped stress measurements
|
Diestel, Gunnar |
|
2001 |
41 |
7 |
p. 1019-1022 4 p. |
article |
28 |
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer
|
Jalabert, L. |
|
2001 |
41 |
7 |
p. 981-985 5 p. |
article |
29 |
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient
|
Beichele, M. |
|
2001 |
41 |
7 |
p. 1089-1092 4 p. |
article |
30 |
Sub-100 nm CMOS circuit performance with high-K gate dielectrics
|
Mohapatra, N.R. |
|
2001 |
41 |
7 |
p. 1045-1048 4 p. |
article |
31 |
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices
|
Strobel, S |
|
2001 |
41 |
7 |
p. 1085-1088 4 p. |
article |
32 |
The electron irradiation effects on silicon gate dioxide used for power MOS devices
|
Badila, M. |
|
2001 |
41 |
7 |
p. 1015-1018 4 p. |
article |
33 |
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices
|
Innertsberger, G |
|
2001 |
41 |
7 |
p. 973-975 3 p. |
article |
34 |
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes
|
Asli, N. |
|
2001 |
41 |
7 |
p. 1071-1076 6 p. |
article |
35 |
Ultra-thick gate oxides: charge generation and its impact on reliability
|
Schwalke, Udo |
|
2001 |
41 |
7 |
p. 1007-1010 4 p. |
article |
36 |
Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams
|
Borsoni, G. |
|
2001 |
41 |
7 |
p. 1063-1066 4 p. |
article |
37 |
Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides
|
Monsieur, F. |
|
2001 |
41 |
7 |
p. 1035-1039 5 p. |
article |