no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A new approach to the dynamic thermal modelling of semiconductor packages
|
Masana, F.N |
|
2001 |
41 |
6 |
p. 901-912 12 p. |
article |
2 |
A new finite element approach to stress analysis in microfabrication technology
|
Mijalković, Slobodan |
|
2001 |
41 |
6 |
p. 837-845 9 p. |
article |
3 |
A simplified yield modeling method for design rule trade-off in interconnection substrates
|
Scheffler, Michael |
|
2001 |
41 |
6 |
p. 861-869 9 p. |
article |
4 |
A technique for transparent fault injection and simulation in VHDL
|
Zwolinski, Mark |
|
2001 |
41 |
6 |
p. 797-804 8 p. |
article |
5 |
Characterisation of embedded filters in advanced printed wiring boards
|
O'Reilly, Stephen |
|
2001 |
41 |
6 |
p. 781-788 8 p. |
article |
6 |
Effects of electron beam generated in vacuum photo-thermal processing on metal–silicon contacts
|
Golan, G |
|
2001 |
41 |
6 |
p. 871-879 9 p. |
article |
7 |
Electro-thermal simulation of microsystems with mixed abstraction modelling
|
Jakovljevic, Mirko |
|
2001 |
41 |
6 |
p. 823-835 13 p. |
article |
8 |
Generation–recombination noise in bipolar transistors
|
Dai, Yisong |
|
2001 |
41 |
6 |
p. 919-925 7 p. |
article |
9 |
High injection effects on noise characteristics of Si BJTs and SiGe HBTs
|
Martı́n-Martı́nez, M.J. |
|
2001 |
41 |
6 |
p. 847-854 8 p. |
article |
10 |
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors
|
Haendler, S |
|
2001 |
41 |
6 |
p. 855-860 6 p. |
article |
11 |
Improved understanding of metal ion reservoirs within barrier-metal systems
|
Dion, Michael J |
|
2001 |
41 |
6 |
p. 805-814 10 p. |
article |
12 |
In the memory of Yisong Dai
|
Jones, Brian K |
|
2001 |
41 |
6 |
p. 779- 1 p. |
article |
13 |
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
|
Sandén, Martin |
|
2001 |
41 |
6 |
p. 881-886 6 p. |
article |
14 |
Recombination current measurements in the space charge region of MOS field-induced pn junctions
|
Sorge, R |
|
2001 |
41 |
6 |
p. 789-795 7 p. |
article |
15 |
Reliability evaluation of a silicon-on-silicon MCM-D package
|
Barton, J |
|
2001 |
41 |
6 |
p. 887-899 13 p. |
article |
16 |
Study of light-induced annealing effects in a-Si:H thin films
|
Ho, W.Y. |
|
2001 |
41 |
6 |
p. 913-917 5 p. |
article |
17 |
Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation
|
Schenkel, M |
|
2001 |
41 |
6 |
p. 815-822 8 p. |
article |
18 |
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures
|
Mao, Lingfeng |
|
2001 |
41 |
6 |
p. 927-931 5 p. |
article |