| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors
|
De Souza, M.M.
|
|
2001
|
41 |
2 |
p. 169-177
9 p.
|
artikel
|
| 2 |
A generalized model for the lifetime of microelectronic components, applied to storage conditions
|
Wise, Loren J
|
|
2001
|
41 |
2 |
p. 317-322
6 p.
|
artikel
|
| 3 |
Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs
|
Hsu, C.T
|
|
2001
|
41 |
2 |
p. 201-209
9 p.
|
artikel
|
| 4 |
An investigation of the mechanical behavior of conductive elastomer interconnects
|
Xie, Jingsong
|
|
2001
|
41 |
2 |
p. 281-286
6 p.
|
artikel
|
| 5 |
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy
|
Lamb, A.C
|
|
2001
|
41 |
2 |
p. 273-279
7 p.
|
artikel
|
| 6 |
Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems
|
Harsányi, Gábor
|
|
2001
|
41 |
2 |
p. 229-237
9 p.
|
artikel
|
| 7 |
Design issues of a three-dimensional packaging scheme for power modules
|
Haque, Shatil
|
|
2001
|
41 |
2 |
p. 295-305
11 p.
|
artikel
|
| 8 |
Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions
|
Schuster, Constance E.
|
|
2001
|
41 |
2 |
p. 239-252
14 p.
|
artikel
|
| 9 |
Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
|
Militaru, L
|
|
2001
|
41 |
2 |
p. 253-263
11 p.
|
artikel
|
| 10 |
Investigation of the surface silica layer on porous poly-Si thin films
|
Wong, H
|
|
2001
|
41 |
2 |
p. 179-184
6 p.
|
artikel
|
| 11 |
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect
|
Bubennikov, Alexander N
|
|
2001
|
41 |
2 |
p. 219-228
10 p.
|
artikel
|
| 12 |
Low-frequency noise in single–poly bipolar transistors at low base current density
|
Valdaperez, Nicolas
|
|
2001
|
41 |
2 |
p. 265-271
7 p.
|
artikel
|
| 13 |
Module allocation with idle-time utilization for on-line testability
|
Ismaeel, A.A.
|
|
2001
|
41 |
2 |
p. 323-332
10 p.
|
artikel
|
| 14 |
Neutron-induced 10B fission as a major source of soft errors in high density SRAMs
|
Baumann, Robert C.
|
|
2001
|
41 |
2 |
p. 211-218
8 p.
|
artikel
|
| 15 |
Reliability aspects of thermal micro-structures implemented on industrial 0.8 μm CMOS chips
|
Sheng, L.Y
|
|
2001
|
41 |
2 |
p. 307-315
9 p.
|
artikel
|
| 16 |
Semiconductor devices for RF applications: evolution and current status
|
Schwierz, F.
|
|
2001
|
41 |
2 |
p. 145-168
24 p.
|
artikel
|
| 17 |
Study of micro-BGA solder joint reliability
|
Tu, P.L
|
|
2001
|
41 |
2 |
p. 287-293
7 p.
|
artikel
|
| 18 |
Unifying the thermal–chemical and anode-hole-injection gate-oxide breakdown models
|
Cheung, Kin P.
|
|
2001
|
41 |
2 |
p. 193-199
7 p.
|
artikel
|
| 19 |
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages
|
Levin, M.N
|
|
2001
|
41 |
2 |
p. 185-191
7 p.
|
artikel
|
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