| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternative CMOS or alternative to CMOS?
|
Deleonibus, S
|
|
2001
|
41 |
1 |
p. 3-12
10 p.
|
artikel
|
| 2 |
An image system for fast positioning and accuracy inspection of ball grid array boards
|
Lin, Chern-Sheng
|
|
2001
|
41 |
1 |
p. 119-128
10 p.
|
artikel
|
| 3 |
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs
|
Yang, Nian
|
|
2001
|
41 |
1 |
p. 37-46
10 p.
|
artikel
|
| 4 |
A wavelet analysis of 1/f and white noise in microwave transistors
|
Ferrante, Gaetano
|
|
2001
|
41 |
1 |
p. 99-104
6 p.
|
artikel
|
| 5 |
Correlation between predicted cause of SRAM failures and in-line defect data
|
Coppens, Peter
|
|
2001
|
41 |
1 |
p. 53-57
5 p.
|
artikel
|
| 6 |
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle
|
Ohyama, H.
|
|
2001
|
41 |
1 |
p. 79-85
7 p.
|
artikel
|
| 7 |
Direct temperature measurement of integrated microelectronic devices by thermally induced leakage currents
|
Pieper, Klaus-Willi
|
|
2001
|
41 |
1 |
p. 133-136
4 p.
|
artikel
|
| 8 |
Editorial
|
Stojadinovic, Ninoslav
|
|
2001
|
41 |
1 |
p. 1-
1 p.
|
artikel
|
| 9 |
Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes
|
Chen, X.Y
|
|
2001
|
41 |
1 |
p. 105-110
6 p.
|
artikel
|
| 10 |
Evaluation of thick-film resistor structural parameters based on noise index measurements
|
Jevtić, M.M
|
|
2001
|
41 |
1 |
p. 59-66
8 p.
|
artikel
|
| 11 |
Guidebook for Managing Silicon Chip Reliability; Michael G. Pecht, Riko Radojcic, Gopal Rao. CRC Press LLC, Boca Raton, 1999, 224 pp. ISBN: 0-8493-9624-7
|
Jevtic, M
|
|
2001
|
41 |
1 |
p. 141-142
2 p.
|
artikel
|
| 12 |
Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems
|
Oohashi, H
|
|
2001
|
41 |
1 |
p. 111-118
8 p.
|
artikel
|
| 13 |
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors
|
Golan, G
|
|
2001
|
41 |
1 |
p. 67-72
6 p.
|
artikel
|
| 14 |
Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs
|
Mateos, Javier
|
|
2001
|
41 |
1 |
p. 73-77
5 p.
|
artikel
|
| 15 |
New expression for base transit time in a bipolar transistor for all levels of injection
|
Hassan, M.M.Shahidul
|
|
2001
|
41 |
1 |
p. 137-140
4 p.
|
artikel
|
| 16 |
On the calculation of gate tunneling currents in ultra-thin metal–insulator–semiconductor capacitors
|
Magnus, W.
|
|
2001
|
41 |
1 |
p. 31-35
5 p.
|
artikel
|
| 17 |
Proportional difference estimate method of determining characteristic parameters of normal and log–normal distributions
|
Mu, Fuchen
|
|
2001
|
41 |
1 |
p. 129-131
3 p.
|
artikel
|
| 18 |
Reliability physics of compound semiconductor transistors for microwave applications
|
Borgarino, M
|
|
2001
|
41 |
1 |
p. 21-30
10 p.
|
artikel
|
| 19 |
Status and trends of silicon RF technology
|
Burghartz, Joachim N.
|
|
2001
|
41 |
1 |
p. 13-19
7 p.
|
artikel
|
| 20 |
The coherence of the gate and drain noise in stressed AlGaAs–InAlGaAs PHEMTs
|
Jones, B.K
|
|
2001
|
41 |
1 |
p. 87-97
11 p.
|
artikel
|
| 21 |
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range
|
Teramoto, A
|
|
2001
|
41 |
1 |
p. 47-52
6 p.
|
artikel
|
| 22 |
Understanding Semiconductor Devices; Sima Dimitrijev. Oxford University Press, New York. 2000. ISBN: 0-19-513186-X
|
Stojadinovic, Ninoslav
|
|
2001
|
41 |
1 |
p. 142-143
2 p.
|
artikel
|
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