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                             81 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A challenge—the need for central assessment of reliability 1965
 4 4 p. 371-
1 p.
 artikel
2 A fast and reliable industrial cyclical remote control system 1965
 4 4 p. 373-
1 p.
 artikel
3 A figure of merit for digital systems Josephs, H.C.
 1965
 4 4 p. 345-350
6 p.
 artikel
4 An evaluation of Zener diodes to develop screening information 1965
 4 4 p. 372-
1 p.
 artikel
5 Applications of the scanning electron microscope to solid-state devices 1965
 4 4 p. 385-
1 p.
 artikel
6 Applied semiconductor integrated circuits 1965
 4 4 p. 376-
1 p.
 artikel
7 A review of 100 per cent X-ray inspection of semiconductors 1965
 4 4 p. 372-
1 p.
 artikel
8 Better bonding methods improve hybrid circuits 1965
 4 4 p. 381-
1 p.
 artikel
9 Breakdown phenomena in silicon semiconductor devices 1965
 4 4 p. 376-
1 p.
 artikel
10 Breakdown voltages of germanium plane-cylindrical junctions 1965
 4 4 p. 379-
1 p.
 artikel
11 Capacitors with thin oxide film dielectrics 1965
 4 4 p. 384-385
2 p.
 artikel
12 Carrier mobility and current saturation in the MOS transistor 1965
 4 4 p. 377-
1 p.
 artikel
13 Characteristics of silicon p-n junctions formed by sodium and cesium ion bombardment 1965
 4 4 p. 375-
1 p.
 artikel
14 Charge storage effects in silicon dioxide films 1965
 4 4 p. 376-
1 p.
 artikel
15 Comparisons and applications of various types of hybrid circuits 1965
 4 4 p. 374-
1 p.
 artikel
16 Computer aided circuit reliability analysis 1965
 4 4 p. 373-
1 p.
 artikel
17 Computing values for resistors in semiconductors from diffusion parameters and vice versa Busen, Karl M.
 1965
 4 4 p. 359-363
5 p.
 artikel
18 Designing digital monolithic integrated circuits Technical Staff,
 1965
 4 4 p. 331-340
10 p.
 artikel
19 Designing monolithic integrated circuits 1965
 4 4 p. 378-
1 p.
 artikel
20 Design review—tools and techniques 1965
 4 4 p. 371-
1 p.
 artikel
21 Digital systems using thin-film microcircuits Watts, A.T.
 1965
 4 4 p. 351-352
2 p.
 artikel
22 Electrical breakdown in vacuum: new experimental and theoretical observations 1965
 4 4 p. 381-
1 p.
 artikel
23 Electronic component reliability: the role of environmental testing 1965
 4 4 p. 372-
1 p.
 artikel
24 Electronic interaction between impurities in the oxide film and the semiconductor substrate 1965
 4 4 p. 376-
1 p.
 artikel
25 Factors influencing the measurement of the ionizing efficiency of ion pumps 1965
 4 4 p. 384-
1 p.
 artikel
26 Feedback: perils and potentials in designing integrated circuits 1965
 4 4 p. 375-
1 p.
 artikel
27 Fibred and epitaxial growth in sputtered films of GaAs 1965
 4 4 p. 380-
1 p.
 artikel
28 Finding the reliable transistor—the mechanical and thermal testing of silicon planar devices 1965
 4 4 p. 372-373
2 p.
 artikel
29 “Flash” evaporation for thin film deposition 1965
 4 4 p. 380-
1 p.
 artikel
30 Formation of thin film circuits using preferential nucleation 1965
 4 4 p. 382-
1 p.
 artikel
31 Heterojunction properties of the oxidized semiconductor 1965
 4 4 p. 375-
1 p.
 artikel
32 Hydrogen-induced surface space-charge regions in oxide-protected silicon 1965
 4 4 p. 377-
1 p.
 artikel
33 Inductors that fit integrated circuits 1965
 4 4 p. 375-
1 p.
 artikel
34 Injection electroluminescence in metal-semiconductor tunnel diodes 1965
 4 4 p. 375-
1 p.
 artikel
35 Integrated circuit device and fabrication technology 1965
 4 4 p. 378-
1 p.
 artikel
36 Laminates and cribbage boards connect integrated circuits 1965
 4 4 p. 374-
1 p.
 artikel
37 Lasers and microelectronics 1965
 4 4 p. 375-
1 p.
 artikel
38 Lateral a.c. current flow model for metal-insulator-semiconductor capacitors 1965
 4 4 p. 377-
1 p.
 artikel
39 Les techniques de la microelectronique et l'instrumentation nucléaire Sarquiz, M.
 1965
 4 4 p. 365-369
5 p.
 artikel
40 Limitations of the MOS capacitance method for the determination of semiconductor surface properties 1965
 4 4 p. 379-
1 p.
 artikel
41 Low-pressure sputtered germanium films 1965
 4 4 p. 384-
1 p.
 artikel
42 Measurement of electrical breakdown in evaporated dielectric films 1965
 4 4 p. 383-
1 p.
 artikel
43 Microelectronics techniques and nuclear instrumentation 1965
 4 4 p. 374-
1 p.
 artikel
44 Miniaturized RC filters using phase-locked loop 1965
 4 4 p. 374-
1 p.
 artikel
45 Modern trends in microelectronics 1965
 4 4 p. 374-
1 p.
 artikel
46 Nucleation and initial growth of single-crystal films 1965
 4 4 p. 382-
1 p.
 artikel
47 Optoelectronics at work. Photon-coupled devices provide electrical isolation in applications ranging from oscillators to signal generators, modulators to multiplexers 1965
 4 4 p. 373-
1 p.
 artikel
48 Parasitic effects in microelectronic circuits 1965
 4 4 p. 378-
1 p.
 artikel
49 PbS thin film transistors 1965
 4 4 p. 382-
1 p.
 artikel
50 Photo-etching thin-film circuits 1965
 4 4 p. 379-380
2 p.
 artikel
51 Photolithographic masks for integrated and thin film circuitry 1965
 4 4 p. 374-
1 p.
 artikel
52 Precision metal-film resistors 1965
 4 4 p. 384-
1 p.
 artikel
53 Reliability mathematics and prediction 1965
 4 4 p. 371-
1 p.
 artikel
54 Research on failure in electronic components 1965
 4 4 p. 372-
1 p.
 artikel
55 Status report of integrated circuits reliability Reliability Staff,
 1965
 4 4 p. 315-330
16 p.
 artikel
56 Stresses in evaporated silicon monoxide films 1965
 4 4 p. 382-
1 p.
 artikel
57 Structute and properties of dielectric films 1965
 4 4 p. 384-
1 p.
 artikel
58 Study and treatment of semiconductor surfaces 1965
 4 4 p. 379-
1 p.
 artikel
59 Surface adsorption and vacuum breakdown 1965
 4 4 p. 382-
1 p.
 artikel
60 System reliability when failure depends on a parameter that ages 1965
 4 4 p. 373-
1 p.
 artikel
61 Tantalum capacitor accelerated life testing 1965
 4 4 p. 371-
1 p.
 artikel
62 Techniques for obtaining uniform thin glass films on substrates 1965
 4 4 p. 380-
1 p.
 artikel
63 Temperature dependence of n-type MOS transistors 1965
 4 4 p. 377-378
2 p.
 artikel
64 The effect of frequency on the electrical resistivity of granular metal films 1965
 4 4 p. 383-
1 p.
 artikel
65 The effects of oxide traps on the MOS capacitance 1965
 4 4 p. 378-379
2 p.
 artikel
66 The effect structure of grown silicon dioxide films 1965
 4 4 p. 376-
1 p.
 artikel
67 The electron beam microprobe as a tool in materials engineering 1965
 4 4 p. 385-
1 p.
 artikel
68 The formation of thin films of silica by the electron bombardment of triphenylsilanol 1965
 4 4 p. 383-
1 p.
 artikel
69 The insulated gate tunnel junction triode 1965
 4 4 p. 381-
1 p.
 artikel
70 The metal-oxide-semiconductor transistor 1965
 4 4 p. 377-
1 p.
 artikel
71 Theoretical characteristics of insulated gate field effect devices 1965
 4 4 p. 382-
1 p.
 artikel
72 The use of fault-history records for the maintenance of telephone switching mechanisms 1965
 4 4 p. 373-
1 p.
 artikel
73 Thick films—how and when to use them 1965
 4 4 p. 384-
1 p.
 artikel
74 Thickness measurement and electrical conductivity of evaporated metallic films 1965
 4 4 p. 380-
1 p.
 artikel
75 Thin-film capacitance element: which is best for your purpose 1965
 4 4 p. 381-
1 p.
 artikel
76 Thin film rectifiers 1965
 4 4 p. 384-
1 p.
 artikel
77 Thin films of niobium-tin by codeposition 1965
 4 4 p. 380-
1 p.
 artikel
78 Thin silicon film growth on polycrystalline alumina ceramic 1965
 4 4 p. 380-381
2 p.
 artikel
79 Vacuum-deposited thin-film circuits 1965
 4 4 p. 381-
1 p.
 artikel
80 Video correlator using thin-film Hall multipliers 1965
 4 4 p. 383-
1 p.
 artikel
81 X-ray television inspection of electronic systems 1965
 4 4 p. 372-
1 p.
 artikel
                             81 gevonden resultaten
 
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