nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A.C. behaviour of damaged surface layers on CdS crystals
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
2 |
Active R-C filters for tantalum thin film circuitry
|
|
|
1965 |
4 |
3 |
p. 311- 1 p. |
artikel |
3 |
A manufacturer's approach to high reliability
|
|
|
1965 |
4 |
3 |
p. 301-302 2 p. |
artikel |
4 |
An analysis of physical adsorption isotherms in ultra-high-vacuum range
|
|
|
1965 |
4 |
3 |
p. 313-314 2 p. |
artikel |
5 |
An analysis of the CdSe thin-film triode as a current limiter
|
|
|
1965 |
4 |
3 |
p. 311- 1 p. |
artikel |
6 |
An equipment manufacturer's problems in the application of microelectronics
|
Lawton, A.T. |
|
1965 |
4 |
3 |
p. 275-278 4 p. |
artikel |
7 |
A new concept for microminiature interconnections
|
|
|
1965 |
4 |
3 |
p. 302- 1 p. |
artikel |
8 |
An investigation into the reliability of planar transistors
|
Young, M.R.P. |
|
1965 |
4 |
3 |
p. 245-266 22 p. |
artikel |
9 |
Application of low energy sputtering for thin film deposition
|
|
|
1965 |
4 |
3 |
p. 311-312 2 p. |
artikel |
10 |
A review of step-stress testing
|
|
|
1965 |
4 |
3 |
p. 302- 1 p. |
artikel |
11 |
A study of “tunnel” conduction between two metallic layers separated by a thin oxide layer
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
12 |
A technique for measuring the temperature of nickel-chromium films in thin film circuits
|
Parmee, J.L. |
|
1965 |
4 |
3 |
p. 295-296 2 p. |
artikel |
13 |
A tuned microelectronic amplifier using thin films
|
Windle, D.J. |
|
1965 |
4 |
3 |
p. 241-242 2 p. |
artikel |
14 |
Basic considerations in integrated circuit design
|
|
|
1965 |
4 |
3 |
p. 306- 1 p. |
artikel |
15 |
Built-in reliability
|
|
|
1965 |
4 |
3 |
p. 301- 1 p. |
artikel |
16 |
Calculation of the capacitance of a semiconductor surface, with application to silicon
|
|
|
1965 |
4 |
3 |
p. 309- 1 p. |
artikel |
17 |
Capacitance-voltage dependence on zinc-diffused GaAs p-n junctions
|
|
|
1965 |
4 |
3 |
p. 309- 1 p. |
artikel |
18 |
Carrier surface scattering in silicon inversion layers
|
|
|
1965 |
4 |
3 |
p. 307- 1 p. |
artikel |
19 |
Cathodic pulverization, its mechanisms, its means of operation, its original applications in the field of thin layers
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
20 |
Chemical and ambient effects on surface conduction is passivated silicon semiconductor
|
|
|
1965 |
4 |
3 |
p. 308- 1 p. |
artikel |
21 |
Correlation between cyclic strain range and low-cycle fatigue life of metals
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
22 |
Cost: a reliability factor
|
|
|
1965 |
4 |
3 |
p. 301- 1 p. |
artikel |
23 |
Depositing active and passive thin-film elements on one chip
|
|
|
1965 |
4 |
3 |
p. 310-311 2 p. |
artikel |
24 |
Designing with low-noise MOS FETs: a little different but no harder
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
25 |
Effect of low temperature annealing on the surface conductivity of Si in the Si-SiO2-Al system
|
|
|
1965 |
4 |
3 |
p. 307-308 2 p. |
artikel |
26 |
Effect of physio-chemical parameters upon electromagnetic properties of thin Fe-Ni layers
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
27 |
Effect of temperature and bias on glass-silicon interfaces
|
|
|
1965 |
4 |
3 |
p. 306-307 2 p. |
artikel |
28 |
Effect of vacuum environment on thin film component reliability
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
29 |
Electrical conduction in thin aggregated metal films
|
|
|
1965 |
4 |
3 |
p. 311- 1 p. |
artikel |
30 |
Electric properties of thin films of Germanium with relation to their structure
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
31 |
Electrochemical phenomena in thin films of silicon dioxide on silicon
|
|
|
1965 |
4 |
3 |
p. 307- 1 p. |
artikel |
32 |
Electrode control of SiO2-passivated planar junctions
|
|
|
1965 |
4 |
3 |
p. 307- 1 p. |
artikel |
33 |
Electronic solid-substance component parts (Part 1)
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
34 |
Etching polished depressions in glass plates
|
|
|
1965 |
4 |
3 |
p. 311- 1 p. |
artikel |
35 |
Extension of the theory of thin-film transistors
|
|
|
1965 |
4 |
3 |
p. 310- 1 p. |
artikel |
36 |
Factors influencing the selection and use of integrated circuit packages
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
37 |
General considerations on some properties of thin layers in electronic applications
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
38 |
Growth and structure of electrodeposited thin metal films
|
|
|
1965 |
4 |
3 |
p. 314- 1 p. |
artikel |
39 |
Integrated-circuit makers are ready for the big buying boom to start
|
|
|
1965 |
4 |
3 |
p. 305- 1 p. |
artikel |
40 |
Integrated-circuit system keeps costs down to earth
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
41 |
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structure
|
|
|
1965 |
4 |
3 |
p. 309- 1 p. |
artikel |
42 |
Investigations into the life of silicon-planar transistors
|
|
|
1965 |
4 |
3 |
p. 302- 1 p. |
artikel |
43 |
Leak detection and detectors
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
44 |
Linear microcircuits scarce? Now you can breadboard your own
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
45 |
Logical circuit for microelectronics
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
46 |
Measurement of resistivity of silicon epitaxial layers by the three-point probe technique
|
|
|
1965 |
4 |
3 |
p. 310- 1 p. |
artikel |
47 |
Metastable alloy films
|
|
|
1965 |
4 |
3 |
p. 314- 1 p. |
artikel |
48 |
Microcircuits
|
|
|
1965 |
4 |
3 |
p. 305- 1 p. |
artikel |
49 |
Microelectronics for every circuit engineer—the cermet-semiconductor hybrid module
|
|
|
1965 |
4 |
3 |
p. 305- 1 p. |
artikel |
50 |
Miniaturizing mobile radio equipment
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
51 |
Multiple faults and confidence levels
|
Briggs, N.H. |
|
1965 |
4 |
3 |
p. 235-240 6 p. |
artikel |
52 |
On Si-C contamination of silicon epitaxial wafer
|
|
|
1965 |
4 |
3 |
p. 308- 1 p. |
artikel |
53 |
Optical and structural properties of oxidized titanium films
|
|
|
1965 |
4 |
3 |
p. 314- 1 p. |
artikel |
54 |
Permanent degradation of GaAs tunnel diodes
|
|
|
1965 |
4 |
3 |
p. 302- 1 p. |
artikel |
55 |
p-n heterojunctions
|
|
|
1965 |
4 |
3 |
p. 309- 1 p. |
artikel |
56 |
Progress in the continuous observation of thin-film nucleation and growth processes by electron microscopy
|
|
|
1965 |
4 |
3 |
p. 314- 1 p. |
artikel |
57 |
Proton space charge in anodic oxide films
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
58 |
Rationalized packaging—a new approach to equipment design and assembly
|
|
|
1965 |
4 |
3 |
p. 303-304 2 p. |
artikel |
59 |
Reliability
|
|
|
1965 |
4 |
3 |
p. 302- 1 p. |
artikel |
60 |
Reliability and maintenance of electronic register-translators
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
61 |
Reliability of an electronic process control system
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
62 |
R.F. Connectors—achievement of reliability through standardization and testing
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
63 |
R.F. Connectors—electrical and mechanical factors affecting their selection
|
|
|
1965 |
4 |
3 |
p. 303- 1 p. |
artikel |
64 |
Shallow acceptor level in GaAs crystals resulting from Cu diffusion
|
|
|
1965 |
4 |
3 |
p. 305- 1 p. |
artikel |
65 |
SiO2 masking against phosphorus diffusion using a P2O5 source
|
|
|
1965 |
4 |
3 |
p. 308- 1 p. |
artikel |
66 |
Source contamination effects on the epitaxy of Ge films on Ge
|
|
|
1965 |
4 |
3 |
p. 310- 1 p. |
artikel |
67 |
Space charge injection into impurity semiconductors—II
|
|
|
1965 |
4 |
3 |
p. 305- 1 p. |
artikel |
68 |
Space-charge model for surface potential shifts in silicon passivated with thin insulating layers
|
|
|
1965 |
4 |
3 |
p. 306- 1 p. |
artikel |
69 |
Stabilization of SiO2 passivation layers with P2O5
|
|
|
1965 |
4 |
3 |
p. 306- 1 p. |
artikel |
70 |
Structure and annealing behaviour of metal films deposited on substrates near 80°K: 1. Copper films on glass
|
|
|
1965 |
4 |
3 |
p. 314- 1 p. |
artikel |
71 |
Studies of transparent electrically conductive tin dioxide layers
|
|
|
1965 |
4 |
3 |
p. 311- 1 p. |
artikel |
72 |
System considerations in the application of microcircuitry
|
|
|
1965 |
4 |
3 |
p. 304- 1 p. |
artikel |
73 |
Systems criteria for thin film welding
|
|
|
1965 |
4 |
3 |
p. 310- 1 p. |
artikel |
74 |
The design of silicon frequency selective RC networks
|
Benes̆, O. |
|
1965 |
4 |
3 |
p. 267-268 2 p. |
artikel |
75 |
The established reliability specification
|
|
|
1965 |
4 |
3 |
p. 301- 1 p. |
artikel |
76 |
The heating in vacuum of silicon substrates to temperatures greater than 800°C
|
|
|
1965 |
4 |
3 |
p. 306- 1 p. |
artikel |
77 |
The junction depth of concentration-dependent diffusion. Zinc in III–V compounds
|
|
|
1965 |
4 |
3 |
p. 308- 1 p. |
artikel |
78 |
The meaning of reliability
|
|
|
1965 |
4 |
3 |
p. 301- 1 p. |
artikel |
79 |
Thermal desorption of attached gas from surface sites possessing a uniform distribution of activation energies
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
80 |
Thickness measurement of silicon dioxide layers by the ultraviolet-visible interference method
|
|
|
1965 |
4 |
3 |
p. 308- 1 p. |
artikel |
81 |
Thickness measurements of thin layers obtained by the method of evaporation in a vacuum
|
|
|
1965 |
4 |
3 |
p. 313- 1 p. |
artikel |
82 |
Thin dielectric layers
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
83 |
Thin ferromagnetic films
|
|
|
1965 |
4 |
3 |
p. 312- 1 p. |
artikel |
84 |
Thin films of titanium and titanium oxide for microminiaturization
|
Huber, F. |
|
1965 |
4 |
3 |
p. 283-293 11 p. |
artikel |
85 |
Troubleshooting performance as a function of presentation technique and equipment characteristics
|
|
|
1965 |
4 |
3 |
p. 301- 1 p. |
artikel |