| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A critical evaluation of tantalum nitride thin film resistors
|
|
|
1965
|
4 |
2 |
p. 229-
1 p.
|
artikel
|
| 2 |
Advances in III–V and II–VI semiconductor compounds
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 3 |
Ageing characteristics of field effect thin film active devices
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 4 |
A history of microelectronics development at the Royal Radar Establishment
|
Dummer, G.W.A.
|
|
1965
|
4 |
2 |
p. 193-196
4 p.
|
artikel
|
| 5 |
A hybrid approach to integrated circuits
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 6 |
Analogue multiplication with the space-charge-limited surface-channel triode
|
|
|
1965
|
4 |
2 |
p. 231-
1 p.
|
artikel
|
| 7 |
Analytical determination of resistance of diffused resistors in solid state circuits
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 8 |
A review of microelectronic circuit and system design. Part 1
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 9 |
A survey of conduction mechanisms in very thin films
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
| 10 |
A systematic method of deriving new semiconducting compounds by structural analogy
|
|
|
1965
|
4 |
2 |
p. 227-228
2 p.
|
artikel
|
| 11 |
Automatic sputtering of tantalum films for resistor and capacitor fabrication
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 12 |
Bonding thin films and small foils
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
| 13 |
Case studies of the decreasing failure rate phenomena in mixed populations
|
|
|
1965
|
4 |
2 |
p. 221-
1 p.
|
artikel
|
| 14 |
Characterization of film defects in silicon epitaxial wafers
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 15 |
Circuit applications of field-effect transistors. Part 1. Input circuits
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 16 |
Compatible circuits highlight microelectronics symposium
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 17 |
Computer screening technique for higher reliability
|
|
|
1965
|
4 |
2 |
p. 221-
1 p.
|
artikel
|
| 18 |
Current-voltage relations for thin-film tunnelling structures
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
| 19 |
Deposition and monitoring apparatus for preparing passive microcircuits. Part 4
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 20 |
Deposition and monitoring apparatus for preparing passive microcircuits. Part 3
|
|
|
1965
|
4 |
2 |
p. 231-232
2 p.
|
artikel
|
| 21 |
Determination of impurity distribution profiles in silicon epitaxial wafers
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 22 |
Distributed circuit design
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 23 |
Efforts and outlay made by manufacturers to achieve a high reliability of electronic equipment for military applications
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 24 |
Entretien du matériel d'électronique et fiabilité
|
Guyot, C.
|
|
1965
|
4 |
2 |
p. 145-155
11 p.
|
artikel
|
| 25 |
Epitaxial films produced on germanium and silicon surfaces by the vacuum deposition of silver
|
|
|
1965
|
4 |
2 |
p. 226-
1 p.
|
artikel
|
| 26 |
Equipment and methods for simulating ambient conditions
|
|
|
1965
|
4 |
2 |
p. 221-
1 p.
|
artikel
|
| 27 |
Experience relating to the operational reliability of diodes and transistors
|
|
|
1965
|
4 |
2 |
p. 221-
1 p.
|
artikel
|
| 28 |
Extrapolating component life tests
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 29 |
Fabrication and reliability of thin film crossovers and terminations
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 30 |
Failure modes in thin film circuits
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 31 |
Failure patterns of components
|
|
|
1965
|
4 |
2 |
p. 222-
1 p.
|
artikel
|
| 32 |
Graphical analysis of the parameters affecting the voltage tolerance in silicon p-n or n-p junctions
|
|
|
1965
|
4 |
2 |
p. 226-
1 p.
|
artikel
|
| 33 |
High-reliability testing and assurance for electronic components
|
Meuleau, Charles A.
|
|
1965
|
4 |
2 |
p. 163-177
15 p.
|
artikel
|
| 34 |
IBM develops fly's eye lens technique for generating semiconductor photo masks
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 35 |
Industrial sapphire—a key to reliable microelectronics
|
|
|
1965
|
4 |
2 |
p. 231-
1 p.
|
artikel
|
| 36 |
Influence of mechanical damage on avalanche breadown in silicon pn junctions
|
|
|
1965
|
4 |
2 |
p. 222-
1 p.
|
artikel
|
| 37 |
Integrated circuits shrink a doppler radar system
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 38 |
Interface-alloy epitaxial heterojunctions
|
|
|
1965
|
4 |
2 |
p. 226-
1 p.
|
artikel
|
| 39 |
Lambda and the question of confidence
|
Honeychurch, J.
|
|
1965
|
4 |
2 |
p. 123-130
8 p.
|
artikel
|
| 40 |
Laser welding for microelectronic interconnections
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 41 |
Letter to the editor
|
Karp, Martin A.
|
|
1965
|
4 |
2 |
p. 234-
1 p.
|
artikel
|
| 42 |
Low-frequency integrated circuits achieved with thermal transfer
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 43 |
Manufacturers efforts and cost of obtaining a high reliability from electronic equipment for military purposes
|
Baumgartner, F.
|
|
1965
|
4 |
2 |
p. 157-158
2 p.
|
artikel
|
| 44 |
Measurement of layer thickness of silicon epitaxial wafers
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 45 |
Measurement of the resistivity of silicon epitaxial wafers
|
|
|
1965
|
4 |
2 |
p. 227-
1 p.
|
artikel
|
| 46 |
Microbalance for measuring evaporation rates in vacuum
|
|
|
1965
|
4 |
2 |
p. 233-
1 p.
|
artikel
|
| 47 |
Models for integrated-circuit resistors including inherent nonlinearities
|
Lindholm, F.A.
|
|
1965
|
4 |
2 |
p. 179-191
13 p.
|
artikel
|
| 48 |
Monitoring the magnetostriction of thin films during vacuum deposition
|
|
|
1965
|
4 |
2 |
p. 229-
1 p.
|
artikel
|
| 49 |
New interconnection methods for microcircuits
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 50 |
New welding method for microcircuits
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 51 |
Operability
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 52 |
Photoetching of thin lead films with nitromethane
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
| 53 |
Prediction of diode degradation in transistors by measurement of time response
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 54 |
Recent results from reliability tests on transistors
|
|
|
1965
|
4 |
2 |
p. 222-
1 p.
|
artikel
|
| 55 |
Research toward a physics of ageing of silicon p-n junctions
|
|
|
1965
|
4 |
2 |
p. 222-
1 p.
|
artikel
|
| 56 |
Resins for embedding microelectronic devices
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 57 |
Scratch test for measuring adherence of thin films to oxide substrates
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 58 |
Semiconducting thin layers which exhibit a high mobility
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 59 |
Semiconductor integrated circuits for digital applications
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 60 |
Solid-state diffusion effects in zone-refining, and the use of a getter
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 61 |
Some design considerations for low voltage contacts
|
Bayer, R.G.
|
|
1965
|
4 |
2 |
p. 131-144
14 p.
|
artikel
|
| 62 |
Some problems of statistical estimation of reliability
|
|
|
1965
|
4 |
2 |
p. 221-
1 p.
|
artikel
|
| 63 |
Some reliability studies on silicon planar transistors
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 64 |
Space-charge-limited currents and Schottky-emission currents in thin film CdS diodes
|
|
|
1965
|
4 |
2 |
p. 233-
1 p.
|
artikel
|
| 65 |
Space charge regions in semiconductors
|
|
|
1965
|
4 |
2 |
p. 226-
1 p.
|
artikel
|
| 66 |
Sputtered titanium oxide films for microcircuit applications
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 67 |
Stability estimation of electron tubes' measurable features by method of equivalent rate of failures
|
|
|
1965
|
4 |
2 |
p. 222-
1 p.
|
artikel
|
| 68 |
Structure of thin layers of magnesium fluoride: theoretical interpretation of their formation
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 69 |
Substrates for thin-film circuitry
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
| 70 |
The advantage factor for parallel redundant systems
|
|
|
1965
|
4 |
2 |
p. 223-
1 p.
|
artikel
|
| 71 |
The application of a flash discharge lamp to the determination of impurities in thin films
|
|
|
1965
|
4 |
2 |
p. 229-
1 p.
|
artikel
|
| 72 |
The fabrication of thin film circuits. Part 2
|
|
|
1965
|
4 |
2 |
p. 231-
1 p.
|
artikel
|
| 73 |
The Micro-Circuit-Module, a universal interconnection-packaging system
|
|
|
1965
|
4 |
2 |
p. 224-
1 p.
|
artikel
|
| 74 |
The plasma oxidation of metals in forming electronic circuit components
|
|
|
1965
|
4 |
2 |
p. 230-231
2 p.
|
artikel
|
| 75 |
The use of a variable breakdown device as a solid-state inductance and for other electronic functions
|
|
|
1965
|
4 |
2 |
p. 225-226
2 p.
|
artikel
|
| 76 |
The use of chemicals in solid state device fabrication
|
|
|
1965
|
4 |
2 |
p. 231-
1 p.
|
artikel
|
| 77 |
Thick film hybrids: a diode-coupled microelectronic amplifier
|
|
|
1965
|
4 |
2 |
p. 225-
1 p.
|
artikel
|
| 78 |
Thin film capacitor parameter studies
|
|
|
1965
|
4 |
2 |
p. 229-
1 p.
|
artikel
|
| 79 |
Thin-film circuit technology: Part 1. Thin-film R-C networks
|
|
|
1965
|
4 |
2 |
p. 229-
1 p.
|
artikel
|
| 80 |
Thin film electronics in the U.S.A. Part 3
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 81 |
Thin film electronics in the U.S.A. Part 4
|
|
|
1965
|
4 |
2 |
p. 232-
1 p.
|
artikel
|
| 82 |
Thin films of titanium and titanium oxide for microminiaturization
|
|
|
1965
|
4 |
2 |
p. 230-
1 p.
|
artikel
|
| 83 |
Ultra-thin films
|
|
|
1965
|
4 |
2 |
p. 228-
1 p.
|
artikel
|
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