nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides
|
Ghibaudo, G |
|
1999 |
39 |
5 |
p. 597-613 17 p. |
artikel |
2 |
Analysis of external latch-up protection test structure design using numerical simulation
|
Palser, Kevin |
|
1999 |
39 |
5 |
p. 647-659 13 p. |
artikel |
3 |
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines
|
Scorzoni, A. |
|
1999 |
39 |
5 |
p. 615-626 12 p. |
artikel |
4 |
A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements
|
Kelaidis, N |
|
1999 |
39 |
5 |
p. 627-634 8 p. |
artikel |
5 |
Book review
|
|
|
1999 |
39 |
5 |
p. 719- 1 p. |
artikel |
6 |
Cathodoluminescence and photoluminescence of amorphous silicon oxynitride
|
Gritsenko, V.A. |
|
1999 |
39 |
5 |
p. 715-718 4 p. |
artikel |
7 |
Editorial
|
|
|
1999 |
39 |
5 |
p. 595-596 2 p. |
artikel |
8 |
Editorial
|
|
|
1999 |
39 |
5 |
p. 551- 1 p. |
artikel |
9 |
Experiences on reliability simulation in the framework of the PROPHECY project
|
Rempp, Horst |
|
1999 |
39 |
5 |
p. 661-672 12 p. |
artikel |
10 |
Local thermal probing to detect open and shorted IC interconnections
|
Cole Jr., Edward I. |
|
1999 |
39 |
5 |
p. 681-693 13 p. |
artikel |
11 |
Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview
|
Lee, J.C. |
|
1999 |
39 |
5 |
p. 579-593 15 p. |
artikel |
12 |
Reliability of ultrathin gate oxides for ULSI devices
|
Chang, Chun-Yen |
|
1999 |
39 |
5 |
p. 553-566 14 p. |
artikel |
13 |
Remote plasma nitridation, deuterium anneal and pocket implant effects on NMOS hot carrier reliability
|
Aur, Shian |
|
1999 |
39 |
5 |
p. 673-679 7 p. |
artikel |
14 |
Test structures and testing methods for electrostatic discharge: results of PROPHECY project
|
Meneghesso, G |
|
1999 |
39 |
5 |
p. 635-646 12 p. |
artikel |
15 |
The prospect of process-induced charging damage in future thin gate oxides
|
Park, Donggun |
|
1999 |
39 |
5 |
p. 567-577 11 p. |
artikel |
16 |
Wafer level backside emission microscopy: dynamics and effects
|
Chiang, Ching-Lang |
|
1999 |
39 |
5 |
p. 695-708 14 p. |
artikel |
17 |
Wafer level backside emission microscopy: sample preparation
|
Chiang, Ching-Lang |
|
1999 |
39 |
5 |
p. 709-714 6 p. |
artikel |