| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for the channel noise of MESFETs including hot electron effects
|
Forbes, L.
|
|
1999
|
39 |
12 |
p. 1773-1786
14 p.
|
artikel
|
| 2 |
DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs
|
Meneghesso, Gaudenzio
|
|
1999
|
39 |
12 |
p. 1759-1763
5 p.
|
artikel
|
| 3 |
Degradation behavior of the active region and passive region in buried heterostructure (BH) distributed Bragg reflector (DBR) lasers
|
Mawatari, H.
|
|
1999
|
39 |
12 |
p. 1857-1861
5 p.
|
artikel
|
| 4 |
Degradation of d.c. parameters in enhancement mode WN x self-aligned gate GaAs MESFETs under high temperature stress
|
Mun, Jae Kyoung
|
|
1999
|
39 |
12 |
p. 1793-1800
8 p.
|
artikel
|
| 5 |
Effects of InGaP heteropassivation on reliability of GaAs HBTs
|
Song, Chung-Kun
|
|
1999
|
39 |
12 |
p. 1817-1822
6 p.
|
artikel
|
| 6 |
Hot electron degradation effects in 0.14 μm AlInAs/GaInAs/InP HEMTs
|
Nawaz, M
|
|
1999
|
39 |
12 |
p. 1765-1771
7 p.
|
artikel
|
| 7 |
Index
|
|
|
1999
|
39 |
12 |
p. 1899-1902
4 p.
|
artikel
|
| 8 |
InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: a preliminary reliability study
|
Bolognesi, C.R.
|
|
1999
|
39 |
12 |
p. 1833-1838
6 p.
|
artikel
|
| 9 |
[No title]
|
Fantini, Fausto
|
|
1999
|
39 |
12 |
p. 1721-
1 p.
|
artikel
|
| 10 |
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors
|
Borgarino, M.
|
|
1999
|
39 |
12 |
p. 1823-1832
10 p.
|
artikel
|
| 11 |
Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors
|
Pavlidis, Dimitris
|
|
1999
|
39 |
12 |
p. 1801-1808
8 p.
|
artikel
|
| 12 |
Reliability considerations of III-nitride microelectronic devices
|
Würfl, Joachim
|
|
1999
|
39 |
12 |
p. 1737-1757
21 p.
|
artikel
|
| 13 |
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress
|
Rezazadeh, A.A.
|
|
1999
|
39 |
12 |
p. 1809-1816
8 p.
|
artikel
|
| 14 |
Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs
|
Ueda, Osamu
|
|
1999
|
39 |
12 |
p. 1839-1855
17 p.
|
artikel
|
| 15 |
Reliability of compound semiconductor devices for space applications
|
Kayali, Sammy
|
|
1999
|
39 |
12 |
p. 1723-1736
14 p.
|
artikel
|
| 16 |
Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors
|
Brennan, Kevin F
|
|
1999
|
39 |
12 |
p. 1873-1883
11 p.
|
artikel
|
| 17 |
Sensitivity of multimode bidirectional optoelectronic modules to electrostatic discharges
|
Neitzert, H.C.
|
|
1999
|
39 |
12 |
p. 1863-1871
9 p.
|
artikel
|
| 18 |
Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs
|
Fukai, Yoshino K.
|
|
1999
|
39 |
12 |
p. 1787-1792
6 p.
|
artikel
|
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