| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An evaluation of fast wafer level test methods for interconnect reliability control
|
Foley, S
|
|
1999
|
39 |
11 |
p. 1707-1714
8 p.
|
artikel
|
| 2 |
Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain
|
Wolf, Heinrich
|
|
1999
|
39 |
11 |
p. 1541-1549
9 p.
|
artikel
|
| 3 |
Characterization and optimization of a bipolar ESD-device by measurements and simulations
|
Stricker, Andreas D.
|
|
1999
|
39 |
11 |
p. 1563-1577
15 p.
|
artikel
|
| 4 |
Copper metallization reliability
|
Lloyd, J.R
|
|
1999
|
39 |
11 |
p. 1595-1602
8 p.
|
artikel
|
| 5 |
Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements
|
D’Haen, J.
|
|
1999
|
39 |
11 |
p. 1617-1630
14 p.
|
artikel
|
| 6 |
Early electromigration effects and early resistance changes
|
Scorzoni, A.
|
|
1999
|
39 |
11 |
p. 1647-1656
10 p.
|
artikel
|
| 7 |
Electromigration induced aluminum atom migration retarding by grain boundary structure stabilization and copper doping
|
Hasunuma, M
|
|
1999
|
39 |
11 |
p. 1631-1645
15 p.
|
artikel
|
| 8 |
Electromigration performance of Al–Si–Cu filled vias with titanium glue layer
|
Kageyama, M
|
|
1999
|
39 |
11 |
p. 1697-1706
10 p.
|
artikel
|
| 9 |
ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascode configuration
|
R. Anderson, Warren
|
|
1999
|
39 |
11 |
p. 1521-1529
9 p.
|
artikel
|
| 10 |
Investigation into socketed CDM (SDM) tester parasitics
|
Chaine, M
|
|
1999
|
39 |
11 |
p. 1531-1540
10 p.
|
artikel
|
| 11 |
Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network
|
Salome, Pascal
|
|
1999
|
39 |
11 |
p. 1579-1591
13 p.
|
artikel
|
| 12 |
Long term noise measurements and median time to failure test for the characterization of electromigration in metal lines
|
Ciofi, C.
|
|
1999
|
39 |
11 |
p. 1691-1696
6 p.
|
artikel
|
| 13 |
Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al–Si–Cu stripes
|
Witvrouw, A.
|
|
1999
|
39 |
11 |
p. 1603-1616
14 p.
|
artikel
|
| 14 |
Modeling electromigration as a fluid–gas system
|
Schoenmaker, Wim
|
|
1999
|
39 |
11 |
p. 1667-1676
10 p.
|
artikel
|
| 15 |
Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
|
Russ, Christian
|
|
1999
|
39 |
11 |
p. 1551-1561
11 p.
|
artikel
|
| 16 |
[No title]
|
Voldman, Steven H
|
|
1999
|
39 |
11 |
p. 1519-1520
2 p.
|
artikel
|
| 17 |
[No title]
|
Mouthaan, Ton J
|
|
1999
|
39 |
11 |
p. 1593-
1 p.
|
artikel
|
| 18 |
The excess noise in integrated circuit interconnects before and after electromigration damage
|
Guo, Jianping
|
|
1999
|
39 |
11 |
p. 1677-1690
14 p.
|
artikel
|
| 19 |
The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique
|
Van Olmen, J.
|
|
1999
|
39 |
11 |
p. 1657-1665
9 p.
|
artikel
|
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