| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison between normally and highly accelerated electromigration tests
|
Foley, S.
|
|
1998
|
38 |
6-8 |
p. 1021-1027
7 p.
|
artikel
|
| 2 |
A concept to relate wire bonding parameters to bondability and ball bond reliability
|
Liang, Z.N.
|
|
1998
|
38 |
6-8 |
p. 1287-1291
5 p.
|
artikel
|
| 3 |
Advanced IGBT modules for railway traction applications: Reliability testing
|
Berg, H.
|
|
1998
|
38 |
6-8 |
p. 1319-1323
5 p.
|
artikel
|
| 4 |
Analysis of Iddq failures by spectral photon emission microscopy
|
Rams, M.
|
|
1998
|
38 |
6-8 |
p. 877-882
6 p.
|
artikel
|
| 5 |
Analysis of thermomechanical stresses in a 3D packaged micro electro mechanical system
|
Pellet, C.
|
|
1998
|
38 |
6-8 |
p. 1261-1264
4 p.
|
artikel
|
| 6 |
An analysis of the quality and reliability supplement to the SIA Roadmap
|
Thomas, Robert W.
|
|
1998
|
38 |
6-8 |
p. 861-868
8 p.
|
artikel
|
| 7 |
A new adaptive amplifier for biased electron beam induced current applications
|
Ciappa, M.
|
|
1998
|
38 |
6-8 |
p. 889-893
5 p.
|
artikel
|
| 8 |
A new experimental technique to evaluate the plasma induced damage at wafer level testing
|
Pantisano, L.
|
|
1998
|
38 |
6-8 |
p. 919-924
6 p.
|
artikel
|
| 9 |
A new hot carrier degradation law for MOSFET lifetime prediction
|
Marchand, B.
|
|
1998
|
38 |
6-8 |
p. 1103-1107
5 p.
|
artikel
|
| 10 |
A new method for temperature mapping on GaAs field effect transistors
|
Martin, E.
|
|
1998
|
38 |
6-8 |
p. 1245-1250
6 p.
|
artikel
|
| 11 |
A new test method for contactless quantitative current measurement via scanning magneto-resistive probe microscopy
|
Bae, S.
|
|
1998
|
38 |
6-8 |
p. 969-974
6 p.
|
artikel
|
| 12 |
Application of layout overlay for failure analysis
|
Burmer, C.
|
|
1998
|
38 |
6-8 |
p. 987-992
6 p.
|
artikel
|
| 13 |
Assembly and analysis of quantum devices using SPM based methods
|
Montelius, Lars
|
|
1998
|
38 |
6-8 |
p. 943-950
8 p.
|
artikel
|
| 14 |
A study of NMOS behavior under ESD stress: simulation and characterization
|
Wang, Albert Z.
|
|
1998
|
38 |
6-8 |
p. 1183-1186
4 p.
|
artikel
|
| 15 |
A study of soldering heat evaluation for SMDs
|
Etoh, Yoshihiro
|
|
1998
|
38 |
6-8 |
p. 1313-1318
6 p.
|
artikel
|
| 16 |
Author index
|
|
|
1998
|
38 |
6-8 |
p. I-II
nvt p.
|
artikel
|
| 17 |
Automatic fault tracing by successive circuit extraction from CAD layout data with the CAD-linked EB test system
|
Miura, K.
|
|
1998
|
38 |
6-8 |
p. 975-980
6 p.
|
artikel
|
| 18 |
Cantilever influence suppression of contactless IC-testing by electric force microscopy
|
Wittpahl, V.
|
|
1998
|
38 |
6-8 |
p. 981-986
6 p.
|
artikel
|
| 19 |
Characterization of SILO in thin-oxides by using MOSFET substrate current
|
De Salvo, B.
|
|
1998
|
38 |
6-8 |
p. 1075-1080
6 p.
|
artikel
|
| 20 |
Circuit internal logic analysis with electric force microscope- (EFM-) testing
|
Bangert, J.
|
|
1998
|
38 |
6-8 |
p. 951-956
6 p.
|
artikel
|
| 21 |
Comparison between field reliability and new prediction methodology on avionics embedded electronics
|
Charpenel, P.
|
|
1998
|
38 |
6-8 |
p. 1171-1175
5 p.
|
artikel
|
| 22 |
Coupling technology impact on low-cost laser modules performances and reliability
|
Morin, Marie
|
|
1998
|
38 |
6-8 |
p. 1221-1226
6 p.
|
artikel
|
| 23 |
Crack mechanism in wire bonding joints
|
Ramminger, S.
|
|
1998
|
38 |
6-8 |
p. 1301-1305
5 p.
|
artikel
|
| 24 |
Degradation behavior in InGaAs/GaAs strained-quantum well lasers
|
Takeshita, Tatsuya
|
|
1998
|
38 |
6-8 |
p. 1211-1214
4 p.
|
artikel
|
| 25 |
Degradation of performance in MESFETs and HEMTs: simulation and measurement of reliability
|
Feng, Ting
|
|
1998
|
38 |
6-8 |
p. 1239-1244
6 p.
|
artikel
|
| 26 |
Dependence of gate oxide breakdown on initial charge trapping under Fowler-Nordheim injection
|
Martin, A.
|
|
1998
|
38 |
6-8 |
p. 1091-1096
6 p.
|
artikel
|
| 27 |
Design of a low EMI susceptibility CMOS transimpedance operational amplifier
|
Setti, Gianluca
|
|
1998
|
38 |
6-8 |
p. 1143-1148
6 p.
|
artikel
|
| 28 |
Detailed investigation of SEM-results by TEM at one sample using FIB-technique
|
Mühle, U.
|
|
1998
|
38 |
6-8 |
p. 895-899
5 p.
|
artikel
|
| 29 |
Direct observation of local strain field for ULSI devices
|
Hashikawa, N.
|
|
1998
|
38 |
6-8 |
p. 913-917
5 p.
|
artikel
|
| 30 |
Early signatures for REDR-based laser degradations
|
Bonfiglio, A.
|
|
1998
|
38 |
6-8 |
p. 1215-1220
6 p.
|
artikel
|
| 31 |
Editorial
|
Kjåergaard, Claus
|
|
1998
|
38 |
6-8 |
p. ix-
1 p.
|
artikel
|
| 32 |
Effects of alloying elements on electromigration
|
Spolenak, R.
|
|
1998
|
38 |
6-8 |
p. 1015-1020
6 p.
|
artikel
|
| 33 |
Electrical characterization and modification of a microelectroMechanical system (MEMS) for extended mechanical reliability and fatigue testing
|
Meunier, D.
|
|
1998
|
38 |
6-8 |
p. 1265-1269
5 p.
|
artikel
|
| 34 |
Electrical parameters degradation law of MOSFET during ageing
|
Mourrain, Ch.
|
|
1998
|
38 |
6-8 |
p. 1115-1119
5 p.
|
artikel
|
| 35 |
Electromigration failure modes in damascene copper interconnects
|
Arnaud, L.
|
|
1998
|
38 |
6-8 |
p. 1029-1034
6 p.
|
artikel
|
| 36 |
Electronic systems packaging: future reliability challenges
|
Baffett, J.
|
|
1998
|
38 |
6-8 |
p. 1277-1286
10 p.
|
artikel
|
| 37 |
ESD protection methodology for deep-sub-micron CMOS
|
Bock, K.
|
|
1998
|
38 |
6-8 |
p. 997-1007
11 p.
|
artikel
|
| 38 |
Experimental design and evaluation of interconnection materials for improvement of joint reliability at power transistors
|
Jansson, P.
|
|
1998
|
38 |
6-8 |
p. 1297-1300
4 p.
|
artikel
|
| 39 |
Extended noise analysis — a novel tool for reliability screening
|
Härtler, Gisela
|
|
1998
|
38 |
6-8 |
p. 1193-1198
6 p.
|
artikel
|
| 40 |
Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules
|
Findeisen, C.
|
|
1998
|
38 |
6-8 |
p. 1335-1339
5 p.
|
artikel
|
| 41 |
Failure analysis of integrated devices by scanning thermal microscopy (SThM)
|
Fiege, G.B.M.
|
|
1998
|
38 |
6-8 |
p. 957-961
5 p.
|
artikel
|
| 42 |
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests
|
Meneghesso, G.
|
|
1998
|
38 |
6-8 |
p. 1227-1232
6 p.
|
artikel
|
| 43 |
Failure snalysis of wafer using backside OBIC method
|
Ito, Seigo
|
|
1998
|
38 |
6-8 |
p. 993-996
4 p.
|
artikel
|
| 44 |
Field failure analysis on transmission data equipment due to lightning discharges
|
Mino Diaz, E.
|
|
1998
|
38 |
6-8 |
p. 1165-1169
5 p.
|
artikel
|
| 45 |
Full-chip reliability analysis
|
Overhauser, David
|
|
1998
|
38 |
6-8 |
p. 851-859
9 p.
|
artikel
|
| 46 |
Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
|
Tala-Ighil, B.
|
|
1998
|
38 |
6-8 |
p. 1149-1153
5 p.
|
artikel
|
| 47 |
Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (1/f) noise behaviour
|
Sheehan, E.
|
|
1998
|
38 |
6-8 |
p. 931-936
6 p.
|
artikel
|
| 48 |
Hot carrier induced device degradation in RF-nMOSFET's
|
Park, Jong Tae
|
|
1998
|
38 |
6-8 |
p. 1081-1084
4 p.
|
artikel
|
| 49 |
Improved reliability of bistable circuits by selective hot-carrier stress reduction
|
Das, A.G.M.
|
|
1998
|
38 |
6-8 |
p. 1177-1182
6 p.
|
artikel
|
| 50 |
Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiation
|
Benbrik, J.
|
|
1998
|
38 |
6-8 |
p. 901-905
5 p.
|
artikel
|
| 51 |
Investigation of the intrinsic SiO2 area dependence using TDDB testing and model integration into the design process
|
Prendergast, James
|
|
1998
|
38 |
6-8 |
p. 1121-1125
5 p.
|
artikel
|
| 52 |
Junction delineation and EBIC on FIB cross section
|
Perez, G.
|
|
1998
|
38 |
6-8 |
p. 907-912
6 p.
|
artikel
|
| 53 |
Lateral interface effect on pulsed DC electromigration analysis
|
Waltz, P.
|
|
1998
|
38 |
6-8 |
p. 1041-1046
6 p.
|
artikel
|
| 54 |
Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines
|
Vandamme, E.P.
|
|
1998
|
38 |
6-8 |
p. 925-929
5 p.
|
artikel
|
| 55 |
Materials interfaces in flip chip interconnects for optical components; performance and degradation mechanisms
|
Esser, Robert H.
|
|
1998
|
38 |
6-8 |
p. 1307-1312
6 p.
|
artikel
|
| 56 |
Measurement of the thermomechanical behaviour of the solder-lead interface in solder joints by laser probing : a new method for measuring the bond quality
|
Dilhaire, S.
|
|
1998
|
38 |
6-8 |
p. 1293-1296
4 p.
|
artikel
|
| 57 |
Mechanical stress evolution and the blech length: 2D simulation of early electromigration effects
|
Petrescu, V.
|
|
1998
|
38 |
6-8 |
p. 1047-1050
4 p.
|
artikel
|
| 58 |
Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors
|
Vandenbossche, Eric
|
|
1998
|
38 |
6-8 |
p. 1097-1101
5 p.
|
artikel
|
| 59 |
Modelling the field soft error rate of DRAMs by varying the critical cell charge
|
Schleifer, Horst
|
|
1998
|
38 |
6-8 |
p. 1139-1141
3 p.
|
artikel
|
| 60 |
Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects
|
Nikawa, K.
|
|
1998
|
38 |
6-8 |
p. 883-888
6 p.
|
artikel
|
| 61 |
On-chip reliability investigations on power modules actually working in inverter systems
|
Frank, T.
|
|
1998
|
38 |
6-8 |
p. 1361-1366
6 p.
|
artikel
|
| 62 |
On the effect of power cycling stress on IGBT modules
|
Cova, P.
|
|
1998
|
38 |
6-8 |
p. 1347-1352
6 p.
|
artikel
|
| 63 |
On-wafer heating tests to study stability of silicon devices
|
Manic, D.
|
|
1998
|
38 |
6-8 |
p. 1069-1073
5 p.
|
artikel
|
| 64 |
Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stress
|
Van Olmen, J.
|
|
1998
|
38 |
6-8 |
p. 1009-1013
5 p.
|
artikel
|
| 65 |
Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs
|
Walter, Georg H.
|
|
1998
|
38 |
6-8 |
p. 1063-1068
6 p.
|
artikel
|
| 66 |
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs
|
Cattani, L.
|
|
1998
|
38 |
6-8 |
p. 1233-1237
5 p.
|
artikel
|
| 67 |
Recovery and stress dynamics in bipolar transistors and MOS devices
|
Ingvarson, F.
|
|
1998
|
38 |
6-8 |
p. 1109-1113
5 p.
|
artikel
|
| 68 |
Reliability of industrial packaging for microsystems
|
de Reus, R.
|
|
1998
|
38 |
6-8 |
p. 1251-1260
10 p.
|
artikel
|
| 69 |
Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature
|
Yckache, K.
|
|
1998
|
38 |
6-8 |
p. 937-942
6 p.
|
artikel
|
| 70 |
Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling
|
Riess, P.
|
|
1998
|
38 |
6-8 |
p. 1057-1061
5 p.
|
artikel
|
| 71 |
Scanning near-field optical microscopy analyses of electronic devices
|
Cramer, R.M.
|
|
1998
|
38 |
6-8 |
p. 963-968
6 p.
|
artikel
|
| 72 |
Some observation dealing with the failures of IGBT transistors in high power converters
|
Januszews, S.
|
|
1998
|
38 |
6-8 |
p. 1325-1330
6 p.
|
artikel
|
| 73 |
Strain depending reliability of automotive diodes
|
Galateanu, L.
|
|
1998
|
38 |
6-8 |
p. 1331-1334
4 p.
|
artikel
|
| 74 |
Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors
|
Nysæther, J.B.
|
|
1998
|
38 |
6-8 |
p. 1271-1276
6 p.
|
artikel
|
| 75 |
Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence
|
Salviati, G.
|
|
1998
|
38 |
6-8 |
p. 1199-1210
12 p.
|
artikel
|
| 76 |
Systematic derivation of latchup design rules for submicron CMOS processes from test structures
|
van der Pol, J.A.
|
|
1998
|
38 |
6-8 |
p. 1051-1056
6 p.
|
artikel
|
| 77 |
Temperature dependence of snap-back breakdown up to 300°C analyzed using circuit level model and simulation
|
Uffmarm, Dirk
|
|
1998
|
38 |
6-8 |
p. 1133-1138
6 p.
|
artikel
|
| 78 |
Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications
|
Hamidi, A.
|
|
1998
|
38 |
6-8 |
p. 1353-1359
7 p.
|
artikel
|
| 79 |
The dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurements
|
Witvrouw, A.
|
|
1998
|
38 |
6-8 |
p. 1035-1040
6 p.
|
artikel
|
| 80 |
The effect of hot electron current density on nMOSFET reliability
|
Buiu, O.
|
|
1998
|
38 |
6-8 |
p. 1085-1089
5 p.
|
artikel
|
| 81 |
Thermomechanical deformation imaging of power devices by electronic speckle pattern interferometry (ESPI)
|
Nassim, K.
|
|
1998
|
38 |
6-8 |
p. 1341-1345
5 p.
|
artikel
|
| 82 |
The time of “guessing” your failure time distribution is over!
|
Croes, K.
|
|
1998
|
38 |
6-8 |
p. 1187-1191
5 p.
|
artikel
|
| 83 |
The use of the focused ion beam in failure analysis
|
Verkleij, D.
|
|
1998
|
38 |
6-8 |
p. 869-876
8 p.
|
artikel
|
| 84 |
Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films
|
Rodríguez, R.
|
|
1998
|
38 |
6-8 |
p. 1127-1131
5 p.
|
artikel
|
| 85 |
Use of wafer maps in integrated circuit manufacturing
|
Hansen, C.K.
|
|
1998
|
38 |
6-8 |
p. 1155-1164
10 p.
|
artikel
|
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