| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis for the reliability of the intrinsic base ion implantation of a 3 Ghz I2L bipolar process from the measure of integrated resistances: From the results, setting of rules for an expert system
|
Loheac, J.-L.
|
|
1997
|
37 |
1 |
p. 179-186
8 p.
|
artikel
|
| 2 |
CMOS VLSI reliability test model
|
Lisenker, Boris
|
|
1997
|
37 |
1 |
p. 115-120
6 p.
|
artikel
|
| 3 |
Comparison of self-heating effect in GAA and SOI mosfets
|
Francis, P.
|
|
1997
|
37 |
1 |
p. 61-75
15 p.
|
artikel
|
| 4 |
Criteria to reduce failures induced from conveyed electromagnetic interferences on CMOS operational amplifiers
|
Graffi, S.
|
|
1997
|
37 |
1 |
p. 95-113
19 p.
|
artikel
|
| 5 |
Editorial
|
Stojadinović, Ninoslav
|
|
1997
|
37 |
1 |
p. iii-v
nvt p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
1997
|
37 |
1 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Effect of deposition conditions on stability of sputtered oxide in MOS structures
|
Jelenkovic, Emil V.
|
|
1997
|
37 |
1 |
p. 159-169
11 p.
|
artikel
|
| 8 |
Failure analysis in halfmicron and quartermicron eras
|
Nakajima, Shigeru
|
|
1997
|
37 |
1 |
p. 39-52
14 p.
|
artikel
|
| 9 |
Improved understanding of physical defect mechanisms using fault simulation
|
Garyet, Terry C.
|
|
1997
|
37 |
1 |
p. 121-135
15 p.
|
artikel
|
| 10 |
Observation of DC currents induced in MOS capacitors during NBTS aging
|
Lu, Deren
|
|
1997
|
37 |
1 |
p. 171-177
7 p.
|
artikel
|
| 11 |
Publisher's announcement
|
|
|
1997
|
37 |
1 |
p. 1-
1 p.
|
artikel
|
| 12 |
Resistance noise measurement: A better diagnostic tool to detect stress and current induced degradation
|
Vandamme, L.K.J.
|
|
1997
|
37 |
1 |
p. 87-93
7 p.
|
artikel
|
| 13 |
Scaling down and reliability problems of gigabit CMOS circuits
|
Krautschneider, W.H.
|
|
1997
|
37 |
1 |
p. 19-37
19 p.
|
artikel
|
| 14 |
Symbolic fault modelling of MOS combinational circuits
|
Petković, Predrag M.
|
|
1997
|
37 |
1 |
p. 137-157
21 p.
|
artikel
|
| 15 |
Temperature coefficient of resistance fluctuations during electromigration in Al lines
|
Ciofi, C.
|
|
1997
|
37 |
1 |
p. 77-85
9 p.
|
artikel
|
| 16 |
The impact of the substrate preamorphisation on the electrical performances of p+/n silicon junction diodes
|
Minondo, M.
|
|
1997
|
37 |
1 |
p. 53-60
8 p.
|
artikel
|
| 17 |
Toward a building-in reliability approach
|
Schafft, Harry A.
|
|
1997
|
37 |
1 |
p. 3-18
16 p.
|
artikel
|
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