nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of resistivity measurement techniques on epitaxial silicon
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
2 |
Alloys for GaAs devices
|
|
|
1964 |
3 |
4 |
p. 314- 1 p. |
artikel |
3 |
A method for the continuous measurement of thickness and deposition rate of conducting films during a vacuum evaporation
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
4 |
An electronic ear for certifying reliability
|
|
|
1964 |
3 |
4 |
p. 308- 1 p. |
artikel |
5 |
A practical approach to thin-film circuits, Part 1
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
6 |
A simple method for the single or repeated replication of selected areas of surfaces in electron microscopy
|
|
|
1964 |
3 |
4 |
p. 320- 1 p. |
artikel |
7 |
A survey of methods of measuring thin film thicknesses and surface irregularities
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
8 |
A Ti getter pump with evaporation source of TiC on the optimum evaporation condition of titanium
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
9 |
A tunable solid-circuit filter suitable for an i.f. amplifier
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
10 |
Behaviour of CdS thin-film transistors
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
11 |
Behaviour of lattice defects in GaAs
|
|
|
1964 |
3 |
4 |
p. 314- 1 p. |
artikel |
12 |
Behaviour of selenium in gallium arsenide
|
|
|
1964 |
3 |
4 |
p. 309- 1 p. |
artikel |
13 |
Case histories in the field of microelectronic packaging
|
|
|
1964 |
3 |
4 |
p. 309- 1 p. |
artikel |
14 |
Characteristics of insulator diodes determined by space-charge and diffusion
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
15 |
Characteristics of the dielectric diode and triode at very high frequencies
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
16 |
Circuit redundancy as an aid to making functioning cryotron circuits
|
Longden, Maureen |
|
1964 |
3 |
4 |
p. 239-251 13 p. |
artikel |
17 |
Deposition of tantalum films with an open-ended vacuum system
|
|
|
1964 |
3 |
4 |
p. 317- 1 p. |
artikel |
18 |
Distributed device applications of the superconducting tunnel junction
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
19 |
Electrical activity of copper in GaAs
|
|
|
1964 |
3 |
4 |
p. 314- 1 p. |
artikel |
20 |
Electrical evaluation of thin film CdS diodes and transistors
|
|
|
1964 |
3 |
4 |
p. 315- 1 p. |
artikel |
21 |
Electrical properties of surface layers on CdTe crystals
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
22 |
Electron beam machining
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
23 |
Epitaxy: a fresh approach to semicon circuit design
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
24 |
Equipment makers push thin-film microcircuits
|
|
|
1964 |
3 |
4 |
p. 317-318 2 p. |
artikel |
25 |
Equivalent circuit parameters for functional electronic blocks
|
|
|
1964 |
3 |
4 |
p. 313- 1 p. |
artikel |
26 |
Erhöhung der zuverlässigkeit von nachrichtenanlagen durch redundanzeine kritische betrachtung
|
Koppehele, F. |
|
1964 |
3 |
4 |
p. 293-301 9 p. |
artikel |
27 |
Evaporated film strain gauges for high-temperature applications
|
Maclachlan, D.F.A. |
|
1964 |
3 |
4 |
p. 227-232 6 p. |
artikel |
28 |
Evaporation from barium nickel matrix cathodes
|
|
|
1964 |
3 |
4 |
p. 315- 1 p. |
artikel |
29 |
Exciton emission and energy transport in cadmium sulfide crystals
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
30 |
Ferrites: can they be deposited as thin films?
|
|
|
1964 |
3 |
4 |
p. 317- 1 p. |
artikel |
31 |
Fiabilités des matériels électroniques. Essai de classification suivant les besoins des utilisateurs
|
Eldin, J. |
|
1964 |
3 |
4 |
p. 263-269 7 p. |
artikel |
32 |
Flat cable shrinks microcircuit modules
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
33 |
Formation and dissolution of platinum oxide film: Mechanism and kinetics
|
|
|
1964 |
3 |
4 |
p. 315- 1 p. |
artikel |
34 |
Forward step in microcircuits: thin-film transistors form scanning generator
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
35 |
Four-wire terminating unit uses “thin-film” pads
|
|
|
1964 |
3 |
4 |
p. 317- 1 p. |
artikel |
36 |
Gold-epitaxial silicon h.f. diodes
|
|
|
1964 |
3 |
4 |
p. 310-311 2 p. |
artikel |
37 |
Hot-electron emission from n-silicon
|
|
|
1964 |
3 |
4 |
p. 314- 1 p. |
artikel |
38 |
Ideal active elements: a contribution to the problem of their physical realizability
|
|
|
1964 |
3 |
4 |
p. 310- 1 p. |
artikel |
39 |
Inclusion of the rate of manifold outgassing in the vacuum pumping equation
|
|
|
1964 |
3 |
4 |
p. 317- 1 p. |
artikel |
40 |
Interconnection of integrated circuit flat packs in Autonetics improved Minuteman programme
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
41 |
Interface states in abrupt semiconductor heterojunctions
|
|
|
1964 |
3 |
4 |
p. 313-314 2 p. |
artikel |
42 |
La fiabilité opérationnelle dans le cas d'un matériel militaire aperçu sur l'établissement d'un devis de fiabilité previsionnelle
|
Fafeur, J. |
|
1964 |
3 |
4 |
p. 271-291 21 p. |
artikel |
43 |
Laser beam trims resistors
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
44 |
Mechanical and electrical properties of thermocompression bonds
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
45 |
Mesoplasmas and “second breakdown” in silicon junctions
|
|
|
1964 |
3 |
4 |
p. 313- 1 p. |
artikel |
46 |
Metal base transistor pushes back the frequency barrier
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
47 |
Microelectronic devices
|
|
|
1964 |
3 |
4 |
p. 310- 1 p. |
artikel |
48 |
Microwave tube repair
|
|
|
1964 |
3 |
4 |
p. 308- 1 p. |
artikel |
49 |
Miniaturization in electrical communications
|
|
|
1964 |
3 |
4 |
p. 309- 1 p. |
artikel |
50 |
Molecular blocks simplify microcircuits
|
|
|
1964 |
3 |
4 |
p. 313- 1 p. |
artikel |
51 |
New ternary semiconducting compounds, Cd4(P, As)2-(Cl, Br, 1)3
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
52 |
On the reliability evaluation based on the time space transformation
|
|
|
1964 |
3 |
4 |
p. 307-308 2 p. |
artikel |
53 |
Partial pressure measurements in high and ultra-high vacuum systems, Part 1
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
54 |
Partial pressure measurements in high and ultra-high vacuum systems, Part II
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
55 |
Precision electron welder uses low beam voltage
|
|
|
1964 |
3 |
4 |
p. 320- 1 p. |
artikel |
56 |
Prenucleation of lead films with copper, gold and silver
|
|
|
1964 |
3 |
4 |
p. 316- 1 p. |
artikel |
57 |
Preparation of epitaxial layers of silicon—III Heavy doping
|
Nielsen, S. |
|
1964 |
3 |
4 |
p. 233-234 2 p. |
artikel |
58 |
Problems in establishing standards for vacuum measurements and in calibrating vacuum gauges
|
|
|
1964 |
3 |
4 |
p. 317- 1 p. |
artikel |
59 |
Rearrangement of a flat surface without altering the number of broken bonds
|
|
|
1964 |
3 |
4 |
p. 310- 1 p. |
artikel |
60 |
Reliability and redundancy considerations in selecting spacecraft batteries
|
|
|
1964 |
3 |
4 |
p. 308- 1 p. |
artikel |
61 |
Reliability—a practical approach
|
|
|
1964 |
3 |
4 |
p. 308- 1 p. |
artikel |
62 |
Reliability—a product of AGREE-3 testing
|
|
|
1964 |
3 |
4 |
p. 307- 1 p. |
artikel |
63 |
Reliability management—a challenge
|
|
|
1964 |
3 |
4 |
p. 307- 1 p. |
artikel |
64 |
Reliability vs. component tolerances in microelectronic circuits
|
|
|
1964 |
3 |
4 |
p. 310- 1 p. |
artikel |
65 |
Research at R.R.E.—No. 7. Fabrication techniques for a diffused planar pnp transistor
|
|
|
1964 |
3 |
4 |
p. 313- 1 p. |
artikel |
66 |
Research at R.R.E.—No. 5. High-speed programming of an electron beam machine
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
67 |
Single-crystal germanium films by microzone melting
|
|
|
1964 |
3 |
4 |
p. 309- 1 p. |
artikel |
68 |
Stress in thin dielectric films
|
|
|
1964 |
3 |
4 |
p. 315-316 2 p. |
artikel |
69 |
Study of gallium arsenide surfaces
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
70 |
The bombardment of gold films by inert gas ions
|
|
|
1964 |
3 |
4 |
p. 315- 1 p. |
artikel |
71 |
The cost of establishing reliability
|
Yarnell, J. |
|
1964 |
3 |
4 |
p. 303-305 3 p. |
artikel |
72 |
The design of an experimental electron beam machine
|
|
|
1964 |
3 |
4 |
p. 319- 1 p. |
artikel |
73 |
The diffusion of tin and selenium in gallium arsenide
|
|
|
1964 |
3 |
4 |
p. 312-313 2 p. |
artikel |
74 |
The effect of circuit and component redundancy on the reliability of cryotron circuits
|
Longden, Maureen |
|
1964 |
3 |
4 |
p. 253-261 9 p. |
artikel |
75 |
The frustrating problem of inductors in integrated circuits
|
|
|
1964 |
3 |
4 |
p. 311- 1 p. |
artikel |
76 |
Theory of the space-charge-limited surface-channel dielectric triode
|
|
|
1964 |
3 |
4 |
p. 312- 1 p. |
artikel |
77 |
Theory of thin-film transistor operation
|
|
|
1964 |
3 |
4 |
p. 318- 1 p. |
artikel |
78 |
The preparation of very flat surfaces of silicon by electro-polishing
|
|
|
1964 |
3 |
4 |
p. 313- 1 p. |
artikel |
79 |
The silicon insulated-gate field-effect transistor
|
|
|
1964 |
3 |
4 |
p. 309-310 2 p. |
artikel |
80 |
The solubilities and distribution coefficients of Zn in GaAs and GaP
|
|
|
1964 |
3 |
4 |
p. 314- 1 p. |
artikel |
81 |
Time to failure and availability of paralleled systems with repair
|
|
|
1964 |
3 |
4 |
p. 307- 1 p. |
artikel |
82 |
Transient analysis of thin-film structures
|
Lindholm, F.A. |
|
1964 |
3 |
4 |
p. 209-226 18 p. |
artikel |
83 |
Vacuum-deposited thin-film thermocouples for accurate measurement of substrate surface temperature
|
|
|
1964 |
3 |
4 |
p. 316-317 2 p. |
artikel |
84 |
Vacuum deposition of resistors
|
|
|
1964 |
3 |
4 |
p. 315- 1 p. |
artikel |