| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A birth and death model for computing the reliability of a transmission network
|
Alidrisi, Mustafa M.
|
|
1987
|
27 |
4 |
p. 653-659
7 p.
|
artikel
|
| 2 |
Achieving future requirements in ULSI gases
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 3 |
A comparison of several component-testing plans for a series system
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 4 |
A highly reliable memory subsystem design employing SECDED, column sparing, and paging
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 5 |
A lifetime-cost ratio analysis for determining optimal complete repair strategy
|
Alidrisi, Mustafa M.
|
|
1987
|
27 |
4 |
p. 647-648
2 p.
|
artikel
|
| 6 |
Aluminum nitride substates having high thermal conductivity
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 7 |
A model for IC yield analysis and process control
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 8 |
A multistate system under an inspection and repair policy
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 9 |
A multi-step stress-strength model of a parallel system
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 10 |
An algorithm for preventive maintenance policy
|
|
|
1987
|
27 |
4 |
p. 786-787
2 p.
|
artikel
|
| 11 |
An alternative integrated-circuit yield model
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 12 |
Analysis on a cause of rare contact failure in sealed contacts
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 13 |
An approximation formula for a class of fault-tolerant computers
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 14 |
An indirect measurement of energy gap for silicon and germanium
|
|
|
1987
|
27 |
4 |
p. 790-791
2 p.
|
artikel
|
| 15 |
Application of ion beam techniques for amorphization and analysis of thin films
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 16 |
Application of Markov models for RMA assessment
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 17 |
A recursive algorithm for computing exact reliability measures
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 18 |
A reliability model for a k-out-of-N:G redundant system with multiple failure modes and common cause failures
|
Chung, Who Kee
|
|
1987
|
27 |
4 |
p. 621-623
3 p.
|
artikel
|
| 19 |
Army reliability and maintainability training initiatives
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 20 |
A shock model for software failures
|
Xie, Min
|
|
1987
|
27 |
4 |
p. 717-724
8 p.
|
artikel
|
| 21 |
Assembly process automation. Part 2. VLSI design rules
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 22 |
A study of accelerated life evaluation method
|
|
|
1987
|
27 |
4 |
p. 781-
1 p.
|
artikel
|
| 23 |
A tool for aggregate production planning
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 24 |
A unified approach for on-line performance evaluation of CCNs
|
Soi, Inder M.
|
|
1987
|
27 |
4 |
p. 611-614
4 p.
|
artikel
|
| 25 |
Autodoping and particulate contaminations during prediffusion chemical cleaning of silicon wafers
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 26 |
Availability analysis of a repairable system with common-cause failure and one standby unit
|
Mahmoud, M.
|
|
1987
|
27 |
4 |
p. 741-754
14 p.
|
artikel
|
| 27 |
Bayesian shrinkage estimation of system reliability with Weibull distribution of components
|
Pandey, M.
|
|
1987
|
27 |
4 |
p. 625-628
4 p.
|
artikel
|
| 28 |
Bayes prediction in exponential life-testing when sample size is a random variable
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 29 |
B-test of homogeneity
|
Brkich, D.M.
|
|
1987
|
27 |
4 |
p. 639-641
3 p.
|
artikel
|
| 30 |
Bulk electromigration reliability tests of large-grained aluminum lines with regard to semiconductor contacts
|
|
|
1987
|
27 |
4 |
p. 781-
1 p.
|
artikel
|
| 31 |
Burn-in of incandescent sign lamps
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 32 |
CAD/CAM for microwave assemblies
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 33 |
Carbon contamination of ion implanted layers
|
|
|
1987
|
27 |
4 |
p. 794-795
2 p.
|
artikel
|
| 34 |
Changing market realities enhance the appeal of ASICs
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 35 |
Commercial product software reliability assessment
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 36 |
Comparison of confidence intervals for the parameters of the Weibull and extreme value distributions
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 37 |
Compensating for built-in test failures
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 38 |
Computation of optical image profile for lithography and linewidth measurement
|
|
|
1987
|
27 |
4 |
p. 796-
1 p.
|
artikel
|
| 39 |
Controversy cloaks clean room garb
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 40 |
Copper ball bonding
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 41 |
Cost optimization of periodic preventive maintenance
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 42 |
Crystal growing trends
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 43 |
Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 44 |
Defects on the Pt(100) surface and their influence on surface reactions—a scanning tunneling microscopy study
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 45 |
Depth profiling of microelectronic structures by SIMS and AES
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 46 |
Design considerations in high temperature analog CMOS integrated circuits
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 47 |
Design, manufacture, and assembly of high pin count plastic pin grid array packages
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 48 |
Dry etch chemical safety
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 49 |
Dynamic interaction of floating substrates with an ion beam from a three grid microtech system operated without neutralizer
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 50 |
Effect of screen tests and burn-in moisture content of hybrid microcircuits
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 51 |
Effects of solder creep on optical component reliability
|
|
|
1987
|
27 |
4 |
p. 781-
1 p.
|
artikel
|
| 52 |
Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300K
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 53 |
Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 54 |
Electromigration behaviour of SiO2-covered, large-grained, narrow Al-Si lines with ohmic contacts
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 55 |
Electron thermal emission rates of nickel centers in silicon
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 56 |
Empirical relationship between communication costs and the channel bit rate for large computer networks
|
Soi, Inder M.
|
|
1987
|
27 |
4 |
p. 615-619
5 p.
|
artikel
|
| 57 |
Enhancing plant preventive maintenance via RCM
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 58 |
Estimation of average survival time of a process having an exponential lifetime model for time censored data
|
Sharma, S.K.
|
|
1987
|
27 |
4 |
p. 649-652
4 p.
|
artikel
|
| 59 |
Etching of SiO2 in SF6 plasmas: the role of ions and electrons in etching mechanisms
|
|
|
1987
|
27 |
4 |
p. 796-
1 p.
|
artikel
|
| 60 |
Excimer lasers: an emerging technology in semiconductor processing
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 61 |
F/A-18 Hornet reliability program: status report
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 62 |
Fault-tolerant C3I system A0 , A1, MTBF allocations
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 63 |
Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 64 |
Formation and characterization of metal-semiconductor junctions
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 65 |
Furnace atmosphere's effect on cofiring tungsten-alumina multilayer substrates
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 66 |
Hazardous production gases. Part 2. Toxicity and hazards
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 67 |
High resistivity layer formation in InP by ion implantation for ohmic contact characterization
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 68 |
High resolution, high photospeed polyimide for thick film applications
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 69 |
Hybrid circuit manufacturing
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 70 |
Improving gas handling safety
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 71 |
Improving yield in wafer slicing
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 72 |
Incorporating risk analysis into life cycle costing
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 73 |
InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 74 |
Integrated DP tools for R&M math and product handling
|
|
|
1987
|
27 |
4 |
p. 783-784
2 p.
|
artikel
|
| 75 |
Interface structure between reactively ion plated TiO2 films and PET substrate
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 76 |
Inversion electron mobility in Si-SiO2 structures oxidized at low and high temperatures
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 77 |
Ion-assisted thin film deposition and applications
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 78 |
Ion-beam assisted etching of semiconductors
|
|
|
1987
|
27 |
4 |
p. 796-
1 p.
|
artikel
|
| 79 |
Ion energy distributions in a special glow-discharge ion source
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 80 |
Ionization of impurities in silicon
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 81 |
Ionizing radiation in microelectronics processing
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 82 |
Laser exitation of ion beams
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 83 |
Lateral motion of the inversion layer of MOS structures in regions of variable doping density and oxide thickness
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 84 |
Lithography impact on printed wiring boards
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 85 |
Logic design of NAND(NOR) circuits by the entered-map-factoring method
|
Rushdi, A.M.
|
|
1987
|
27 |
4 |
p. 693-701
9 p.
|
artikel
|
| 86 |
Low power laser annealing of disordered semiconductors
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 87 |
Maintability technology
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 88 |
Mass spectrometry in IC fabrication
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 89 |
Material requirements of GaAs ICs and future III–V devices
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 90 |
Measuring thermal conductivity of plastic encapsulants
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 91 |
Memory testing requirements
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 92 |
Metallization for submicron LSI
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 93 |
Molecular beam epitaxy
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 94 |
Molecular beam epitaxy of semiconductor, dielectric and metal films
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 95 |
Multi-echelon repair level analysis MERLA
|
|
|
1987
|
27 |
4 |
p. 784-785
2 p.
|
artikel
|
| 96 |
Multilayering with polyimide dielectric and metallo-organic conductors
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 97 |
Multilayer resist processing: economic considerations
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 98 |
Near surface effects of gold in silicon
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 99 |
New techniques in R&M contract requirements
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 100 |
Numerical simulation of temperature-dependent minorityhole transport in n+ silicon emitters
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 101 |
On a two-unit standby redundant system subject to repair and preventive maintenance
|
Mokaddis, G.S.
|
|
1987
|
27 |
4 |
p. 661-675
15 p.
|
artikel
|
| 102 |
On computing the repair cost of a maintained reliability system with known repair cost function and probability of repair
|
Ntuen, Celestine A.
|
|
1987
|
27 |
4 |
p. 737-740
4 p.
|
artikel
|
| 103 |
On computing the syndrome of a switching function
|
Rushdi, Ali M.
|
|
1987
|
27 |
4 |
p. 703-716
14 p.
|
artikel
|
| 104 |
On the effects of implantation of ions in the MeV energy range into silicon
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 105 |
On the initial system reliability
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 106 |
Optically controlled characteristics in an ion-implanted silicon MESFET
|
|
|
1987
|
27 |
4 |
p. 793-794
2 p.
|
artikel
|
| 107 |
Optimum allocation of computer spares for three-level stocks
|
Cǎtuneanu, V.M.
|
|
1987
|
27 |
4 |
p. 643-646
4 p.
|
artikel
|
| 108 |
Ordering policies under minimal repair
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 109 |
Parameter determination for a parallel device of stages
|
Dichirico, Canio
|
|
1987
|
27 |
4 |
p. 629-630
2 p.
|
artikel
|
| 110 |
Parameter optimization for film homogenization during ion assisted deposition
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 111 |
Physical model of burst noise in thick-film resistors
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 112 |
Piece parts E.S.S. in lieu of destructive physical analysis
|
|
|
1987
|
27 |
4 |
p. 785-786
2 p.
|
artikel
|
| 113 |
Planarization techniques for multilevel metallization
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 114 |
Planning for inter-equipment transport automation
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 115 |
Positive-resist processing for step-and-repeat optical lithography
|
|
|
1987
|
27 |
4 |
p. 796-
1 p.
|
artikel
|
| 116 |
Preliminary evaluation of purchased ICs reliability
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 117 |
Preparation and thermal conductivity of doped semiconductors
|
|
|
1987
|
27 |
4 |
p. 795-796
2 p.
|
artikel
|
| 118 |
Process control in wafer fabrication
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 119 |
Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 120 |
Publications, notices, calls for papers, etc.
|
|
|
1987
|
27 |
4 |
p. 599-610
12 p.
|
artikel
|
| 121 |
Quality alert program management—year one
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 122 |
Quality-control practices in lead-acid battery manufacturing to improve quality, cost, reliability
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 123 |
Reliability analysis using Pico computer systems
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 124 |
Reliability data base of electronic components
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 125 |
Reliability of compact disc
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 126 |
Reliability of lithium battery from user standpoint and a consideration concerning it
|
|
|
1987
|
27 |
4 |
p. 782-783
2 p.
|
artikel
|
| 127 |
Report of appraised method of reliability of connectors
|
|
|
1987
|
27 |
4 |
p. 782-
1 p.
|
artikel
|
| 128 |
R&M applications of cost-benefit analysis
|
|
|
1987
|
27 |
4 |
p. 783-
1 p.
|
artikel
|
| 129 |
R&M in a systematic trade study process
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 130 |
Safety aspects of oil sealed rotary vane vacuum pumps in CVD applications
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 131 |
Selection rule for epitaxial growth techniques
|
|
|
1987
|
27 |
4 |
p. 791-792
2 p.
|
artikel
|
| 132 |
Shelf-life evaluation of aluminum electrolytic capacitors
|
|
|
1987
|
27 |
4 |
p. 781-
1 p.
|
artikel
|
| 133 |
Silicon compilation and design for test
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 134 |
Simplified three-dimensional computer simulation formulae for film thickness distribution in the LPCVD process
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 135 |
Simultaneous placement and routing in integrated circuits
|
|
|
1987
|
27 |
4 |
p. 788-
1 p.
|
artikel
|
| 136 |
SMD technology changes PC-board technology and assembly
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 137 |
Software reliability growth models with testing-effort
|
|
|
1987
|
27 |
4 |
p. 786-
1 p.
|
artikel
|
| 138 |
Solutions for “pump damaging” etch and CVD processes
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 139 |
Space charge effects and dynamic interactions in the case of a broad and intense ion beam bombarding an insulated substrate
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 140 |
Stable ohmic contacts to Zinc Telluride
|
Hajghassem, H.S.
|
|
1987
|
27 |
4 |
p. 677-684
8 p.
|
artikel
|
| 141 |
Super integration greatly reduces design time and development costs
|
|
|
1987
|
27 |
4 |
p. 790-
1 p.
|
artikel
|
| 142 |
Surface analysis technology. Part 2: instrumentation
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 143 |
Surface modification by ion beams
|
|
|
1987
|
27 |
4 |
p. 794-
1 p.
|
artikel
|
| 144 |
Surface planarization of integrated circuits with dielectric inulation
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 145 |
System reliability in the presence of common-cause failures
|
|
|
1987
|
27 |
4 |
p. 784-
1 p.
|
artikel
|
| 146 |
Technological considerations when obtaining high-precision resistors with controllable temperature coefficient of resistance
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 147 |
Temperature dependence of carrier transport in polycrystalline silicon
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 148 |
The branching nonhomogeneous Poisson process and its application to a replacement model
|
Uematsu, Kouyu
|
|
1987
|
27 |
4 |
p. 685-691
7 p.
|
artikel
|
| 149 |
The class of better mean residual life at age t0
|
Kulasekera, Karunarathna B.
|
|
1987
|
27 |
4 |
p. 725-735
11 p.
|
artikel
|
| 150 |
The contribution of SIMS to the characterization of III–V semiconductor layers grown by molecular beam epitaxy
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 151 |
The effect of thermal and radiation defects on the recombination properties of the base region of diffused silicon p-n structures
|
|
|
1987
|
27 |
4 |
p. 791-
1 p.
|
artikel
|
| 152 |
The FASTECH integrated packaging system
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 153 |
The formation of buried oxide layers by ion implantation
|
|
|
1987
|
27 |
4 |
p. 796-
1 p.
|
artikel
|
| 154 |
The “growing” importance of MOCVD
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 155 |
The maximal PN sequences over GF(p)
|
Zabludowski, Antoni
|
|
1987
|
27 |
4 |
p. 631-637
7 p.
|
artikel
|
| 156 |
Thermal and plasma models of pulsed heating of thin films
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 157 |
The selectivity of poly Si and SiO2 etching using a negative dc biasing of powered electrode
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 158 |
The state of reliability design specifications in Canadian industries: A survey
|
Dhillon, Balbir S.
|
|
1987
|
27 |
4 |
p. 755-779
25 p.
|
artikel
|
| 159 |
The use of ion beams in thin film deposition
|
|
|
1987
|
27 |
4 |
p. 795-
1 p.
|
artikel
|
| 160 |
Thickness distribution of films fabricated by the molecular beam epitaxy technique
|
|
|
1987
|
27 |
4 |
p. 792-
1 p.
|
artikel
|
| 161 |
Thin films of rare-earth metal silicides in microelectronics
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 162 |
Total automation in wafer fabrication
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 163 |
Transient current capacities of bond wires in hybrid microcircuits
|
|
|
1987
|
27 |
4 |
p. 793-
1 p.
|
artikel
|
| 164 |
Trim and form equipment review
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 165 |
True reliability growth measurement
|
|
|
1987
|
27 |
4 |
p. 785-
1 p.
|
artikel
|
| 166 |
Viscous behaviour of phosphosilicate and borophosphosilicate glasses in VLSI processing
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
| 167 |
Wafer probing
|
|
|
1987
|
27 |
4 |
p. 787-
1 p.
|
artikel
|
| 168 |
Water quality improvements and VLSI defect density
|
|
|
1987
|
27 |
4 |
p. 781-
1 p.
|
artikel
|
| 169 |
Wet-chemical etching of SiO2 and PSG films, and an etching-induced defect in glass-passivated integrated circuits
|
|
|
1987
|
27 |
4 |
p. 788-789
2 p.
|
artikel
|
| 170 |
Wet etching update
|
|
|
1987
|
27 |
4 |
p. 789-
1 p.
|
artikel
|
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