| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of MOS processes for VLSI. Part II
|
|
|
1985
|
25 |
3 |
p. 588-589
2 p.
|
artikel
|
| 2 |
Adaptive robust estimation based on a family of generalized exponential power distributions
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 3 |
Addendum to: computing failure frequency via mixed products of availabilities and unavailabilities
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 4 |
A discrete time queueing problem with S heterogeneous groups of channels
|
Sharda,
|
|
1985
|
25 |
3 |
p. 455-459
5 p.
|
artikel
|
| 5 |
Advanced CMOS epitaxial processing for latch-up hardening and improved epilayer quality
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 6 |
Advances in X-ray mask technology
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 7 |
A fast algorithm for a redundancy optimization problem
|
Murty, V.Dakshina
|
|
1985
|
25 |
3 |
p. 511-523
13 p.
|
artikel
|
| 8 |
A logarithmic reliability-growth model for single-mission systems
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 9 |
A multiple attribute evaluation of Bayesian availability estimators
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 10 |
An accurate probability-of-failure calculation method
|
|
|
1985
|
25 |
3 |
p. 583-584
2 p.
|
artikel
|
| 11 |
Analysis of one-server two-unit system subject to stage-wise installation and repair
|
Gopalan, M.N.
|
|
1985
|
25 |
3 |
p. 549-560
12 p.
|
artikel
|
| 12 |
Analytical study of the pointwise availability of a parallel redundant 2-out-of-N :F system under head-of-line repair echelon
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 13 |
An analysis of interconnect line capacitance and coupling for VLSI circuits
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 14 |
An analytical model for the narrow-width effect in ion-implanted MOSFETs
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 15 |
An automated, low power, high speed complementary PLA design system for VLSI applications
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 16 |
An efficient algorithm for optimal design of diagnostics
|
|
|
1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 17 |
A new method for impurity states in semiconductors
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 18 |
A new process of grid structure formation for end point detection during substrate thinning of transit time devices
|
Ahmad, S.
|
|
1985
|
25 |
3 |
p. 447-450
4 p.
|
artikel
|
| 19 |
An interactive system for VLSI chip physical design
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 20 |
An ion implant induced instability mechanism in CMOS/SOS device
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 21 |
A note on optimum checkpointing policies
|
Kaio, Naoto
|
|
1985
|
25 |
3 |
p. 451-453
3 p.
|
artikel
|
| 22 |
4483388 Apparatus and method for providing failsafe supplemental heat regulation in an air conditioning control
|
Briccetti, MarioF
|
|
1985
|
25 |
3 |
p. 601-
1 p.
|
artikel
|
| 23 |
A single-chip CMOS analog front-end for high-speed modems
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 24 |
A small experimental robotic PCB assembly system
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 25 |
Automated wafer processing using robots
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 26 |
A valence bond theory of off-center impurities in silicon
|
|
|
1985
|
25 |
3 |
p. 590-591
2 p.
|
artikel
|
| 27 |
Bond-integrity testing of sapphire chips mounted with eutectic preforms
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 28 |
Burn-in: what's in a name?
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 29 |
CAD systems: mapping out tomorrow's ICs
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 30 |
4489397 Chain configurable polycellular wafer scale integrated circuit
|
Lee, KinH
|
|
1985
|
25 |
3 |
p. 605-
1 p.
|
artikel
|
| 31 |
Characteristics and reliability of 100 Å oxides
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 32 |
Characterization of bias sputtered metallization for IC technology
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 33 |
Characterization of die attach failure modes in leadless chip carrier (LCC) packages by auger electron spectroscopy
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 34 |
Characterization of interface states in thin films of thermally grown SiO2
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 35 |
Cleaning processes for HIC's with solder paste
|
|
|
1985
|
25 |
3 |
p. 593-594
2 p.
|
artikel
|
| 36 |
CMOS for high-density gate arrays
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 37 |
CMOS single-chip digital signal processor
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 38 |
Comparison of theoretical and empirical lifetimes for minority carriers in heavily doped silicon
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 39 |
Computer-aided design of an n-MOS custom IC-“Subscriber Chip” of the 32-lines microprocessor based PAX (private automatic exchange) system
|
Srivastava, Ashok
|
|
1985
|
25 |
3 |
p. 425-436
12 p.
|
artikel
|
| 40 |
4488299 Computerized versatile and modular test system for electrical circuits
|
Fellhauer, Michae
|
|
1985
|
25 |
3 |
p. 603-
1 p.
|
artikel
|
| 41 |
Considerations in the hermetic packaging of hybrid microcircuits
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 42 |
Constraint solver for generalized IC layout
|
|
|
1985
|
25 |
3 |
p. 586-587
2 p.
|
artikel
|
| 43 |
Cost analysis in two-unit warm standby models with a regular repairman and patience time
|
Murari, K.
|
|
1985
|
25 |
3 |
p. 473-483
11 p.
|
artikel
|
| 44 |
Cost analysis of a system with partial failure mode and abnormal weather conditions
|
Goel, L.R.
|
|
1985
|
25 |
3 |
p. 461-466
6 p.
|
artikel
|
| 45 |
Cost-benefit analysis of one-server two-unit imperfect switch system subject to multistage repairs
|
Gopalan, M.N.
|
|
1985
|
25 |
3 |
p. 541-548
8 p.
|
artikel
|
| 46 |
Current problems in v.l.s.i. testing and testability
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 47 |
Current status of X-ray lithography: Part I
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 48 |
Custom chip/card design system
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 49 |
Decomposition in reliability analysis of fault-tolerant systems
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 50 |
Dielectric integrity of the gate oxide in SOS devices
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 51 |
4477870 Digital control system monitor having a predetermined output under fault conditions
|
Kraus, MarkG
|
|
1985
|
25 |
3 |
p. 598-599
2 p.
|
artikel
|
| 52 |
Dimensional errors in stepping lithography
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 53 |
4478476 Dip burn-in socket
|
Jones, ElmerR
|
|
1985
|
25 |
3 |
p. 600-
1 p.
|
artikel
|
| 54 |
4477901 Directive diagnostics
|
Braband, EdwardC
|
|
1985
|
25 |
3 |
p. 599-
1 p.
|
artikel
|
| 55 |
Direct write electron beam lithography—a production line reality
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 56 |
Dynamic fault imaging of VLSI random logic devices
|
|
|
1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 57 |
Effect of silicon inclusions on the reliability of sputtered aluminum-silicon metallization
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 58 |
Efficiency of censored reliability studies
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 59 |
Electromigration evaluation—MTF modeling and accelerated testing
|
|
|
1985
|
25 |
3 |
p. 582-583
2 p.
|
artikel
|
| 60 |
Electron energy losses from thin silver films
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 61 |
Electronics assembly robots: U.S. vs Japan
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 62 |
4476433 Electronic test fixture
|
Logan, JohnK
|
|
1985
|
25 |
3 |
p. 597-598
2 p.
|
artikel
|
| 63 |
Electron localization and superconductivity in very thin epitaxially grown Ag films on Ge (001)
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 64 |
Electron mobility in heavily doped silicon
|
|
|
1985
|
25 |
3 |
p. 591-592
2 p.
|
artikel
|
| 65 |
Electrostatic discharge: mechanisms, protection techniques, and effects on integrated circuit reliability
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 66 |
Emphasizing effluent gas scrubbing
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 67 |
Equipment requirements for sub-micron VLSI production
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 68 |
Error analysis in Newton-SOR computer simulation of semiconductor devices
|
|
|
1985
|
25 |
3 |
p. 581-582
2 p.
|
artikel
|
| 69 |
Failure modes of InGaAsP/InP lasers due to adhesives
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 70 |
Failure rate prediction of optical semiconductor devices
|
Sudo, H.
|
|
1985
|
25 |
3 |
p. 525-540
16 p.
|
artikel
|
| 71 |
Fault-tree analysis by fuzzy probability
|
|
|
1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 72 |
Flexible material handling automation in wafer fabrication
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 73 |
Focused ion beam systems for materials analysis and modification
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 74 |
From fault-tree to fault-identification
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 75 |
GaAs crystal growth trends
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 76 |
Gallium arsenide: a practical alternative to silicon
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 77 |
Generalized preventive maintenance policies for a system subject to deterioration
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 78 |
General probability of system failure
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 79 |
High resolution dose uniformity monitoring of ion implanters. Part I
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 80 |
High resolution dose uniformity monitoring of ion implanters. Part II
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 81 |
High temperature annealing behavior of electron traps in thermal SiO2
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 82 |
High throughput submicron lithography with electron beam proximity printing
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 83 |
How to hand-check a symbolic reliability expression
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 84 |
Hybrid approaches to chip interconnection offer many alternatives
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 85 |
Hybrid packaging for the 1980s at EDI
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 86 |
Hybrid wire bonding advances
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 87 |
Hydrodynamics of Czochralski growth—a review of the effects of rotation and buoyancy force
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 88 |
Imbedded semi-Markov process applied to stochastic analysis of a two-unit standby system with two types of failures
|
Agarwal, Manju
|
|
1985
|
25 |
3 |
p. 561-571
11 p.
|
artikel
|
| 89 |
Impact of advances in technology on the properties of Si/SiO2 interface
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 90 |
Improving bond yields to metal package leads
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 91 |
Increased capacity, automation, materials' purity highlight Semicon East
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 92 |
4488267 Integrated circuit chips with removable drivers and/or buffers
|
Harrison, MarcL
|
|
1985
|
25 |
3 |
p. 602-603
2 p.
|
artikel
|
| 93 |
4478352 Integrated circuit component handler singulation apparatus
|
Amundson, Arlon
|
|
1985
|
25 |
3 |
p. 600-
1 p.
|
artikel
|
| 94 |
Inverting paths and cuts of two-state systems
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 95 |
Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 96 |
Ion energy distribution in triode ion plating
|
|
|
1985
|
25 |
3 |
p. 594-595
2 p.
|
artikel
|
| 97 |
Laser epitaxy of materials for electronics
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 98 |
Laser-induced ion mass analysis: a novel technique for solidstate examination
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 99 |
4477827 Lead frame for leaded semiconductor chip carriers
|
Walker, John
|
|
1985
|
25 |
3 |
p. 598-
1 p.
|
artikel
|
| 100 |
Logic failure analysis of CMOS VLSI using a laser probe
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 101 |
Mechanism of oxide leakage current of silicide gate MOSFET's
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 102 |
Mesure de la dispersion des proprietes electriques de monocristaux semi-isolants d'arseniure de gallium
|
|
|
1985
|
25 |
3 |
p. 592-593
2 p.
|
artikel
|
| 103 |
4477775 Method and apparatus for a fast internal logic check of integrated circuits
|
Fazekas, Peter
|
|
1985
|
25 |
3 |
p. 598-
1 p.
|
artikel
|
| 104 |
4471525 Method for manufacturing semiconductor device utilizing two-step etch and selective oxidation to form isolation regions
|
Sasaki, Yoshitaka
|
|
1985
|
25 |
3 |
p. 597-
1 p.
|
artikel
|
| 105 |
4488354 Method for simulating and testing an integrated circuit chip
|
Chan, KasunK
|
|
1985
|
25 |
3 |
p. 604-
1 p.
|
artikel
|
| 106 |
4485234 Method of preparing polyamide acid for processing of semiconductors
|
Makino, Daisuke
|
|
1985
|
25 |
3 |
p. 601-602
2 p.
|
artikel
|
| 107 |
4488349 Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization
|
Murakami, Koichi
|
|
1985
|
25 |
3 |
p. 604-
1 p.
|
artikel
|
| 108 |
4486705 Method of testing networks on a wafer having grounding points on its periphery
|
Stopper, Herber
|
|
1985
|
25 |
3 |
p. 602-
1 p.
|
artikel
|
| 109 |
Military's VHSIC chips quickstep into final phase
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 110 |
Mobility of holes in p-type silicon determined by the self-consistent method
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 111 |
Modeling of defects in integrated circuit photolithographic patterns
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 112 |
Moisture content control using alumina sensor
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 113 |
Moisture control in hermetic leadless chip carriers with silverepoxy die-attach adhesive
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 114 |
4488298 Multi-bit error scattering arrangement to provide fault tolerant semiconductor static memories
|
Bond, GeorgeL
|
|
1985
|
25 |
3 |
p. 603-
1 p.
|
artikel
|
| 115 |
New applications of tape bonding for high lead count devices
|
|
|
1985
|
25 |
3 |
p. 587-588
2 p.
|
artikel
|
| 116 |
New failure mechanisms in sputtered aluminum-silicon films
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 117 |
4488259 On chip monitor
|
Mercy, Brian
|
|
1985
|
25 |
3 |
p. 602-
1 p.
|
artikel
|
| 118 |
On estimation of mean life in the presence of an outlier
|
|
|
1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 119 |
On the development of poly gate n-MOS technology
|
Wadhawan, O.P.
|
|
1985
|
25 |
3 |
p. 437-445
9 p.
|
artikel
|
| 120 |
Optical interconnections for VLSI systems
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 121 |
Optimization of a photoresist process using statistical design of experiments
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 122 |
Persistent photoconductivity in sulfur-diffused silicon
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 123 |
Physics and technology of vapour phase epitaxial growth of GaAs—a review
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 124 |
4489104 Polycrystalline silicon resistor having limited lateral diffusion
|
Lee, Ming-Kwang
|
|
1985
|
25 |
3 |
p. 604-605
2 p.
|
artikel
|
| 125 |
Polyimides in semiconductor manufacturing
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 126 |
Practical application of point-of-use photoresist filtration
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 127 |
Practical preventive reliability using matrix forms
|
|
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1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 128 |
Predicting oxide failure rates using the matrix of a 64K dram chip
|
|
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1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 129 |
Probability of component or subsystem failure before system failure
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 130 |
Process control for semiconductor manufacturing
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 131 |
4477962 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
|
Godejahn, GordonC
|
|
1985
|
25 |
3 |
p. 600-
1 p.
|
artikel
|
| 132 |
Productivity and process feedback
|
|
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1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 133 |
Profit analysis of a cold standby system with two repair distributions
|
Goel, L.R.
|
|
1985
|
25 |
3 |
p. 467-472
6 p.
|
artikel
|
| 134 |
Pseudodynamic cost limit replacement model under minimal repair
|
Park, Kyung S.
|
|
1985
|
25 |
3 |
p. 573-579
7 p.
|
artikel
|
| 135 |
Publications, notices, calls for papers, etc.
|
|
|
1985
|
25 |
3 |
p. 407-410
4 p.
|
artikel
|
| 136 |
Quality hybrid production
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 137 |
Reduction of VT shift due to avalanche-hot-carrier injection using graded drain structures in submicron N-channel MOSFET
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 138 |
Refractory metals and metal silicides for VLSI devices
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 139 |
Reliability and maintainability considerations in computer performance evaluation
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 140 |
Reliability consideration on a compound redundant system with repair
|
Kodama, Masanori
|
|
1985
|
25 |
3 |
p. 485-510
26 p.
|
artikel
|
| 141 |
Reliability/design assessment by internal-node timing-margin analysis using laser photocurrent-injection
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 142 |
Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 143 |
Reliability of gate metallization in power GaAs MESFETS
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 144 |
Reliability of high temperature I2 L integrated circuits
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 145 |
Reliability of plastic-encapsulated integrated circuits in moisture environments
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 146 |
Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in lownoise dual gate GaAs FET
|
Bresse, J.-F.
|
|
1985
|
25 |
3 |
p. 411-424
14 p.
|
artikel
|
| 147 |
Resilient concurrency control in distributed database systems
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 148 |
Resist profile control in E-beam lithography
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 149 |
Robots in the clean room
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 150 |
ROMs to bubbles. The selection of nonvolatile memories
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 151 |
Safety analysis of Ada programs using fault trees
|
|
|
1985
|
25 |
3 |
p. 584-
1 p.
|
artikel
|
| 152 |
4477884 Semiconductor memory with improved data programming time
|
Iwahashi, Hirosh
|
|
1985
|
25 |
3 |
p. 599-
1 p.
|
artikel
|
| 153 |
Silicon CVD for SOI: principles and possible applications
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 154 |
Silicon inclusions in aluminum interconnects
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 155 |
Silicon molecular-beam epitaxy
|
|
|
1985
|
25 |
3 |
p. 595-
1 p.
|
artikel
|
| 156 |
Silicon-on-silicon packaging
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 157 |
SMIF: a technology for wafer cassette transfer in VLSI manufacturing
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 158 |
Software reliability analysis models
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 159 |
Software to silicon
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 160 |
Space-charge behaviour of “thin-MOS” diodes with MBE-grown silicon films
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 161 |
Sputtered TI-doped AL-SI for enhanced interconnect reliability
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 162 |
S-shaped reliability growth modeling for software error detection
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 163 |
Structure/property relationships in experimental thick-film interfaces
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 164 |
4479214 System for updating error map of fault tolerant memory
|
Ryan, PhilipM
|
|
1985
|
25 |
3 |
p. 601-
1 p.
|
artikel
|
| 165 |
Testing ultra high speed devices
|
|
|
1985
|
25 |
3 |
p. 583-
1 p.
|
artikel
|
| 166 |
The design of a truly random monolithic noise generator
|
|
|
1985
|
25 |
3 |
p. 590-
1 p.
|
artikel
|
| 167 |
The effect of porosity on mechanical, electrical and thermal characteristics of conductive die-attach adhesives
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 168 |
The free charge carrier effects on elastic properties of silicon
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 169 |
The future and potential of optical scanning systems
|
|
|
1985
|
25 |
3 |
p. 588-
1 p.
|
artikel
|
| 170 |
The logarithmic expression of reliability quantities
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 171 |
The microstructure of RuO2 thick film resistors and the influence of glass particle size on their electrical properties
|
|
|
1985
|
25 |
3 |
p. 594-
1 p.
|
artikel
|
| 172 |
The ordering of terms in cut-based recursive disjoint products
|
|
|
1985
|
25 |
3 |
p. 585-
1 p.
|
artikel
|
| 173 |
Theoretical and experimental studies of failure mechanisms in gallium arsenide three-terminal transferred electron devices
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 174 |
The physics and reliability of fusing polysilicon
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 175 |
The quasi-equilibrium response of MOS structures: quasistatic factor
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 176 |
The relationship between electromigration-induced short-circuit and open-circuit failure times in multi-layer VLSI technologies
|
|
|
1985
|
25 |
3 |
p. 584-585
2 p.
|
artikel
|
| 177 |
Therman effect of die bond voids
|
|
|
1985
|
25 |
3 |
p. 582-
1 p.
|
artikel
|
| 178 |
The role of thermal grooving, thermotransport and electrotransport on the failure of thin film metallizations
|
|
|
1985
|
25 |
3 |
p. 593-
1 p.
|
artikel
|
| 179 |
The roles and use of failure-analysis service
|
|
|
1985
|
25 |
3 |
p. 581-
1 p.
|
artikel
|
| 180 |
The silicon foundry interface
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 181 |
The temperature dependence of the electrical resisitivity of gold films
|
|
|
1985
|
25 |
3 |
p. 591-
1 p.
|
artikel
|
| 182 |
The trials of wafer-scale integration
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 183 |
The VLSI package—an analytical review
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 184 |
Time dependent dielectric breakdown measurement of high pressure low temperature oxidized film
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
| 185 |
Transition to one micron technology: part 5
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 186 |
Transition to one micron technology: part 3
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 187 |
Transition to one micron technology: part 4
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 188 |
Trends in computer aided design systems
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 189 |
4489365 Universal leadless chip carrier mounting pad
|
Daberkoe, David
|
|
1985
|
25 |
3 |
p. 605-
1 p.
|
artikel
|
| 190 |
Using a hardware simulation engine for custom MOS structured designs
|
|
|
1985
|
25 |
3 |
p. 589-
1 p.
|
artikel
|
| 191 |
Wafer fabrication and process automation research at Stanford University
|
|
|
1985
|
25 |
3 |
p. 587-
1 p.
|
artikel
|
| 192 |
4479088 Wafer including test lead connected to ground for testing networks thereon
|
Stopper, Herber
|
|
1985
|
25 |
3 |
p. 600-601
2 p.
|
artikel
|
| 193 |
Wafer scale integration: an appraisal
|
|
|
1985
|
25 |
3 |
p. 586-
1 p.
|
artikel
|
| 194 |
Zircone stabilisee en technologie arseniure de gallium; etude theorique concernant les mecanismes de reduction de l'oxyde de GaAs au travers d'une couche de zircone dopee a l'oxyde de calcium
|
|
|
1985
|
25 |
3 |
p. 592-
1 p.
|
artikel
|
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