| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation
|
|
|
1984
|
24 |
3 |
p. 596-597
2 p.
|
artikel
|
| 2 |
Advanced submicron research and technology development at the national submicron facility
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 3 |
Advances in automatic die bonding
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 4 |
Advances in cassette-to-cassette sputtercoating systems
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 5 |
Advances in silicon technology for the semiconductor industry. Part II
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 6 |
A heuristic method for optimum redundancy allocation in non-coherent systems
|
Gopal, Krishna
|
|
1984
|
24 |
3 |
p. 401-405
5 p.
|
artikel
|
| 7 |
Algebraic approximation of event tree sequences
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 8 |
A “low-risk” design approach to silicon integrated circuits
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 9 |
Aluminum wire as a viable alternative to gold for ball bonding
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 10 |
Amorphous silicon prepared by thermal decomposition of silane: properties and applications
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 11 |
An alternate method of fabricating multilayer-multichip ceramic substrates
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 12 |
Analysis of a two-unit standby system with three modes and imperfect switching device
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 425-429
5 p.
|
artikel
|
| 13 |
Analysis of variance of reliabilities
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 14 |
Analytical solutions for threshold voltage calculations in ion-implanted IGFETS
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 15 |
A new failure mechanism related to the formation of dark defects in GaAlAs visible lasers
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 16 |
An introduction to operating systems
|
G.W.A.D.,
|
|
1984
|
24 |
3 |
p. 580-
1 p.
|
artikel
|
| 17 |
An investigation of the factors that influence the deposit/etch balance in a radiant-heated silicon epitaxial reactor
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 18 |
Anodic gold corrosion in plastic encapsulated devices
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 19 |
A novel approach to silicon gate CMOS device scaling
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 20 |
A parallel redundant complex system with two types of failure under preemptive-repeat repair discipline
|
Gupta, P.P.
|
|
1984
|
24 |
3 |
p. 395-399
5 p.
|
artikel
|
| 21 |
A Petri net approach to enumerating all circuits of a graph
|
Hura, G.S
|
|
1984
|
24 |
3 |
p. 387-389
3 p.
|
artikel
|
| 22 |
A physical model for degradation of drams during accelerated stress ageing
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 23 |
A recursive method for network reliability measures evaluation
|
Zabludowski, Antoni
|
|
1984
|
24 |
3 |
p. 445-451
7 p.
|
artikel
|
| 24 |
Are MMICs a fad or fact?
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 25 |
A review of error propagation analysis in systems
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 26 |
A review of specifications MIL-M-38510E, appendix G, MIL-STD-883B, MIL-STD-883C and MIL-STS-1772
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 27 |
A source of degradation of plastic encapsulated devices
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 28 |
Assuring age requirements of a complex system
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 29 |
A two (multicomponent) unit parallel system with standby and common cause failure
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 415-418
4 p.
|
artikel
|
| 30 |
A two-unit deteriorating standby system with inspection
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 435-438
4 p.
|
artikel
|
| 31 |
Automated board testing: coping with complex circuits
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 32 |
Automating PCB production
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 33 |
Availability analysis of a two-unit cold standby system with two switching failure modes
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 419-423
5 p.
|
artikel
|
| 34 |
Bake effects in positive photoresist
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 35 |
Bias humidity performance and failure mechanisms of nonhermetic aluminum SIC's in an environment contaminated with Cl2
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 36 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984
|
24 |
3 |
p. 367-369
3 p.
|
artikel
|
| 37 |
Catastrophic burn out in power VDMOS field-effect transistors
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 38 |
Characterization and screening of SiO2 defects in EEPROM structures
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 39 |
Comparison of attribute reliability growth models
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 40 |
Comparison of different SOI technologies: assets and liabilities
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 41 |
Cost analysis in a two-unit standby system with a regular repairman and patience time
|
Goyal, Vibha
|
|
1984
|
24 |
3 |
p. 453-459
7 p.
|
artikel
|
| 42 |
Damaged-induced isolation in n-type InP by light-ion implantation
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 43 |
Degradation mechanism in Si-doped Al/Si contacts and an extremely stable metallization system
|
|
|
1984
|
24 |
3 |
p. 594-595
2 p.
|
artikel
|
| 44 |
Deionized water system
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 45 |
Design of central processor units with custon VLSI and gate array circuits
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 46 |
Developments in Czochralski silicon crystal growth
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 47 |
Diffusion of zinc into ion implanted iron doped indium phosphide
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 48 |
Double-barrel III–V compound vapor-phase epitaxy systems
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 49 |
Effects of enhanced gettering on device performance
|
|
|
1984
|
24 |
3 |
p. 590-591
2 p.
|
artikel
|
| 50 |
Effects of substrate thermal characteristics on the electromigration behaviour of Al thin film conductors
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 51 |
Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part II: Experiment
|
Shoucair, F.
|
|
1984
|
24 |
3 |
p. 487-510
24 p.
|
artikel
|
| 52 |
Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory
|
Shoucair, F.
|
|
1984
|
24 |
3 |
p. 465-485
21 p.
|
artikel
|
| 53 |
Electrical properties of RF sputtered NiCr thin film resistors with Cu contacts
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 54 |
Electromigration failure in thin film silicides and polysilicon/silicide (polycide) structures
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 55 |
Electromigration-induced extrusions in multi-level technologies
|
|
|
1984
|
24 |
3 |
p. 584-585
2 p.
|
artikel
|
| 56 |
Electronic systems effectiveness and life cycle costing
|
G.W.A.D.,
|
|
1984
|
24 |
3 |
p. 579-
1 p.
|
artikel
|
| 57 |
Electron tunnelling and hopping possibilities in RuO2 thick films
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 58 |
Engineering reliability management
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 59 |
Epitaxial growth of GaAs in chloride transport systems
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 60 |
Epitaxial reactor systems: characteristics, operation and epitaxy costs
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 61 |
Exclusive-OR representations of Boolean functions
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 62 |
Failure analysis of some uncommon failures
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 63 |
Failure analysis: the computer as a tool
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 64 |
Fast RAM corrects errors on chip
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 65 |
Ferromagnetism of alloys: a new probe in ion implantation
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 66 |
Full cycle corrective action (FCCA) for improved warranty service
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 67 |
GaAs FET high power pulse reliability
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 68 |
Graphic comparison of three-state device redundancies
|
Park, Kyung S.
|
|
1984
|
24 |
3 |
p. 461-464
4 p.
|
artikel
|
| 69 |
HMOS 2: the first step toward VLSI
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 70 |
Hot electron reliability modeling in VLSI devices
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 71 |
Hyperfine interactions from EPR of iron in silicon
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 72 |
IC gives car radio highly accurate digital tuning
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 73 |
IC houses are fruitful in multipliers
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 74 |
IC lead finishing: issues and options
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 75 |
Imaging latch-up sites in LSI CMOS with a laser photoscanner
|
|
|
1984
|
24 |
3 |
p. 591-592
2 p.
|
artikel
|
| 76 |
Implications of a model for optimum burn-in
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 77 |
Improved planar isolation with buried-channel MOS FET's
|
Sunami, H.
|
|
1984
|
24 |
3 |
p. 555-577
23 p.
|
artikel
|
| 78 |
In-circuit testing may shorten life of ICs
|
|
|
1984
|
24 |
3 |
p. 583-
1 p.
|
artikel
|
| 79 |
Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopy
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 80 |
Ion implant testing for production control
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 81 |
Japan pushes IC research
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 82 |
256-K dynamic RAM is more than just an upgrade
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 83 |
Latch-up and timing failure analysis of CMOS VLSI using electron beam techniques
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 84 |
Leakage currents in ion implantation systems
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 85 |
Linewidth measurement on IC wafers by diffraction from grating test patterns
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 86 |
Lowering of the breakdown voltage of silicon dioxide by asperities and at spherical electrodes
|
|
|
1984
|
24 |
3 |
p. 592-593
2 p.
|
artikel
|
| 87 |
LPCVD polycrystalline silicon: growth and physical properties of in-situ phosphorus doped and undoped films
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 88 |
LSI techniques applied to mini-computers
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 89 |
Mechanical reliability NAD/MCAIR F-18 APU components case history
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 90 |
Microchip technology the past and the future
|
G.W.A.D.,
|
|
1984
|
24 |
3 |
p. 582-
1 p.
|
artikel
|
| 91 |
Microcomputers for process control
|
G.W.A.D.,
|
|
1984
|
24 |
3 |
p. 581-
1 p.
|
artikel
|
| 92 |
Microwave integrated circuits offer alternatives to the radar system designer
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 93 |
Mo-gate MOS devices stability under long-term positive bias-temperature stressing test
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 94 |
More realistic reliability analysis by conditional distributions
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 95 |
Multilayer-resist lithography
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 96 |
Multilayer substrates with thin film fine lines generated by the ground layer oxidation (GLO) process
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 97 |
New processes sparkle at VLSI parley
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 98 |
New thick-film microwave elements for microwave integrated circuits
|
|
|
1984
|
24 |
3 |
p. 595-596
2 p.
|
artikel
|
| 99 |
New type of local resonances in thin rough films
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 100 |
Noise measurements in ion implanted MOSFETs
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 101 |
On a compound redundant system with the particular switching devices
|
Fukuta, Jiro
|
|
1984
|
24 |
3 |
p. 539-553
15 p.
|
artikel
|
| 102 |
On a relationship between substrate perfection and stacking faults in homoepitaxial silicon
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 103 |
On the imperfection of replacement
|
|
|
1984
|
24 |
3 |
p. 587-588
2 p.
|
artikel
|
| 104 |
On the stochastic behaviour of a 1-server 2-unit system subject to arbitrary failure, random inspection and two failure modes
|
Subramanyam Naidu, R.
|
|
1984
|
24 |
3 |
p. 375-378
4 p.
|
artikel
|
| 105 |
Optical projection lithography in the submicron range
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 106 |
Oxygen and carbon measurements on silicon slices by the IR method
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 107 |
Paramagnetic states in doped amorphous silicon and germanium
|
|
|
1984
|
24 |
3 |
p. 593-594
2 p.
|
artikel
|
| 108 |
Pellicles on wafer steppers with lenticular optics
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 109 |
Pentagon campaigns for GaAs chips
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 110 |
Performance model of software systems using Petri nets
|
Hura, G.S.
|
|
1984
|
24 |
3 |
p. 391-393
3 p.
|
artikel
|
| 111 |
Philosophy of a new structure of software reliability modelling
|
Govil, K.K.
|
|
1984
|
24 |
3 |
p. 407-409
3 p.
|
artikel
|
| 112 |
Photovoltaic properties of sputtered n-CdO films on p-Cu2O
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 113 |
Physical analysis of data on fused-open bond wires
|
|
|
1984
|
24 |
3 |
p. 583-584
2 p.
|
artikel
|
| 114 |
Planar, ion-implanted bipolar devices in GaAs
|
|
|
1984
|
24 |
3 |
p. 597-
1 p.
|
artikel
|
| 115 |
Plasma enhanced CVD: silicon nitride and beyond
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 116 |
Plasma processing: some safety, health and engineering considerations
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 117 |
Positive resist material requirements for VLSI device fabrication. Part III
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 118 |
Precipitation process design for denuded zone formation in CZ-silicon wafers
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 119 |
Predicting IC costs
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 120 |
Prediction methods and quality follow-up in the design and manufacturing stages
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 121 |
Probabilistic culling in fault tree evaluation
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 122 |
Problem solving in the IC industry through applied statistics: comparing two processes
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 123 |
Properties of metal semiconductor contacts—I. Voltagecurrent characteristics of contacts on intrinsic semiconductors
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 124 |
Publications, notices, calls for papers, etc.
|
|
|
1984
|
24 |
3 |
p. 371-374
4 p.
|
artikel
|
| 125 |
Rapid assessment of the humidity dependence of IC failure modes by use of HAST
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 126 |
Rate-determining factor of aluminum corrosion and a rapid method of assessing the moisture resistance of plastic encapsulated LSI
|
|
|
1984
|
24 |
3 |
p. 585-
1 p.
|
artikel
|
| 127 |
Recent advances and future directions in CZ-silicon crystal growth technology
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 128 |
Reliability and failure mechanisms of nonhermetic aluminum SIC's: literature review and bias humidity performance
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 129 |
Reliability assessment and screening by reliability indicator methods
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 130 |
Reliability evaluation of Plessey low noise gallium arsenide field effect transistors
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 131 |
Reliability growth during a product development program
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 132 |
Reliability improvement of a positive displacement compressor expander
|
|
|
1984
|
24 |
3 |
p. 586-587
2 p.
|
artikel
|
| 133 |
Reliability of aluminum-gate metallization in GaAs power FETs
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 134 |
Reliability of GaAs MESFET logic circuits
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 135 |
Reliability of Ku-BAND GaAs power FETs under highly stressed RF operation
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 136 |
RF operational life test of power GaAs FET amplifiers
|
|
|
1984
|
24 |
3 |
p. 585-586
2 p.
|
artikel
|
| 137 |
R & M assessment of field operational failures
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 138 |
Scan-path logic integrated on chip tests gate array
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 139 |
Selection factor algorithm for reliability and maintainability tradeoff to optimize availability allocation subject to cost constraint
|
Govil, K.K.
|
|
1984
|
24 |
3 |
p. 411-413
3 p.
|
artikel
|
| 140 |
Semiconductor dopant status report
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 141 |
s-expected number of inspections and repairs of a one-server n-unit system subject to random inspection
|
Subramanyam Naidu, R.
|
|
1984
|
24 |
3 |
p. 379-385
7 p.
|
artikel
|
| 142 |
Silicon-gate C-MOS chips gain immunity to SCR latchup
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 143 |
Silicon-wafer process evaluation using minority-carrier diffusion-length measurement by the SPV method
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 144 |
Single-chip speech synthesizers speak well of their algorithms
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 145 |
Soft pipes cause reliability problem in bipolar integrated circuits
|
|
|
1984
|
24 |
3 |
p. 586-
1 p.
|
artikel
|
| 146 |
Software qualification and reliability
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 147 |
Software reliability estimation: a realization of competing risk
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 148 |
Solder creams and vapour phase soldering in hybrid technology
|
|
|
1984
|
24 |
3 |
p. 595-
1 p.
|
artikel
|
| 149 |
Spin dependent trapping at a silicon grain boundary
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 150 |
Static in a wafer fabrication facility: causes and solutions
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 151 |
Statistical methodology for product improvement
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 152 |
Stochastic behaviour of a two-unit standby system with better utilization of units
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 431-434
4 p.
|
artikel
|
| 153 |
Structured-design system takes over the complexities in VLSI circuits
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 154 |
Substrates review: silicon, sapphire and GaAs
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 155 |
Switch failure in a two-unit standby system with better utilization of units
|
Goel, L.R.
|
|
1984
|
24 |
3 |
p. 439-443
5 p.
|
artikel
|
| 156 |
System effectiveness criteria for the analysis of MX basing modes
|
Sherif, Y.S.
|
|
1984
|
24 |
3 |
p. 527-538
12 p.
|
artikel
|
| 157 |
Techniques of wire bond testing
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 158 |
Technological advances in physical vapor deposition
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 159 |
The effect of entrapped Krypton 85 gas on device reliability
|
|
|
1984
|
24 |
3 |
p. 584-
1 p.
|
artikel
|
| 160 |
The facade of probabilistic risk analysis: sophisticated computation does not necessarily imply credibility
|
|
|
1984
|
24 |
3 |
p. 587-
1 p.
|
artikel
|
| 161 |
Thermal studies on pin array packages
|
|
|
1984
|
24 |
3 |
p. 589-
1 p.
|
artikel
|
| 162 |
The role of wafer transport in front-end automation
|
|
|
1984
|
24 |
3 |
p. 590-
1 p.
|
artikel
|
| 163 |
Thickness dependence of dielectric breakdown failure of thermal SiO2 films
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 164 |
Tight binding study of the silicon self-interstitial in tetrahedral site
|
|
|
1984
|
24 |
3 |
p. 593-
1 p.
|
artikel
|
| 165 |
Trapping in tunnel oxides grown on textured polysilicon
|
|
|
1984
|
24 |
3 |
p. 594-
1 p.
|
artikel
|
| 166 |
Trends in wafer fab and their driving economic forces
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 167 |
Unique on-chip test structures enhance E-PROM manufacturability
|
|
|
1984
|
24 |
3 |
p. 588-
1 p.
|
artikel
|
| 168 |
Using oxygen partial pressure to improve chromium thin film adhesion to alumina substrates
|
|
|
1984
|
24 |
3 |
p. 596-
1 p.
|
artikel
|
| 169 |
VHSIC/VLSI packaging update
|
|
|
1984
|
24 |
3 |
p. 592-
1 p.
|
artikel
|
| 170 |
Wafer inspection automation: current and future needs
|
|
|
1984
|
24 |
3 |
p. 591-
1 p.
|
artikel
|
| 171 |
Yield-enhancement of a large systolic array chip
|
Moore, W.R.
|
|
1984
|
24 |
3 |
p. 511-526
16 p.
|
artikel
|
Tijdschrift beschrijving