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                             255 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AC and DC conductivity in amorphous silicon-hydrogen films 1984
24 1 p. 187-
1 p.
artikel
2 Advances in silicon technology for the semiconductor industry, Part I 1984
24 1 p. 178-
1 p.
artikel
3 A fault-tolerant system architecture for Navy applications 1984
24 1 p. 172-
1 p.
artikel
4 A large scale hybrid thermal print head 1984
24 1 p. 186-
1 p.
artikel
5 ALU, multiplier chips zip through IEEE floating-point operations 1984
24 1 p. 182-
1 p.
artikel
6 A moments compiler for computing Bayes intervals for complex systems 1984
24 1 p. 174-
1 p.
artikel
7 Analysis of two-unit redundant system under partial failure and two types of repairs Goel, L.R.
1984
24 1 p. 21-24
4 p.
artikel
8 A new computer-aided simulation model for polycrystalline silicon film resistors 1984
24 1 p. 185-186
2 p.
artikel
9 Application of automatic alignment to MOS processing in projection printing 1984
24 1 p. 179-180
2 p.
artikel
10 Applications of focused ion beams to microlithography 1984
24 1 p. 188-
1 p.
artikel
11 A practical approach to the testing of a high-volume custom linear IC 1984
24 1 p. 182-
1 p.
artikel
12 A review of RAM testing methodologies 1984
24 1 p. 182-
1 p.
artikel
13 Ashing process for dry photolithography Singh, Awatar
1984
24 1 p. 165-
1 p.
artikel
14 A software evaluation: results and recommendations 1984
24 1 p. 172-
1 p.
artikel
15 Aspects of accelerated ageing tests used on connectors and terminals for the U.K. external telephone network 1984
24 1 p. 171-
1 p.
artikel
16 Assessment of micropackaged integrated circuits in high reliability applications 1984
24 1 p. 170-
1 p.
artikel
17 Assuring VLSI quality and reliability with test patterns 1984
24 1 p. 170-171
2 p.
artikel
18 A study of some factors influencing the wear resistance of lubricated gold contacts 1984
24 1 p. 170-
1 p.
artikel
19 A suspended boat loader based on the cantilever principle 1984
24 1 p. 179-
1 p.
artikel
20 A systems approach to 1-μm NMOS 1984
24 1 p. 180-
1 p.
artikel
21 A two-level sparing approach for plug-in modules 1984
24 1 p. 170-
1 p.
artikel
22 A two-unit parallel redundant system with three modes and bivariate exponential lifetimes Goel, L.R.
1984
24 1 p. 25-28
4 p.
artikel
23 Automated thermal reliability analysis of hybrids 1984
24 1 p. 185-
1 p.
artikel
24 Availability considerations for satellite links 1984
24 1 p. 173-174
2 p.
artikel
25 Basic chemistry and mechanisms of plasma etching 1984
24 1 p. 178-
1 p.
artikel
26 Birth-death and bug counting 1984
24 1 p. 176-
1 p.
artikel
27 BIT analysis and design reliability 1984
24 1 p. 172-
1 p.
artikel
28 32-bit processor chip integrates major system functions 1984
24 1 p. 181-
1 p.
artikel
29 Bold Koreans push into leading-edge ICs 1984
24 1 p. 177-
1 p.
artikel
30 CAD system coordinates complete semicustom chip design 1984
24 1 p. 179-
1 p.
artikel
31 CAD systems: meeting the challenge of VLSI design 1984
24 1 p. 178-
1 p.
artikel
32 Calendar of international conferences, symposia, lectures and meetings of interest 1984
24 1 p. 1-3
3 p.
artikel
33 Can electron beam mask making keep pace with advancing technology? 1984
24 1 p. 188-
1 p.
artikel
34 Carrier recombination and lifetime in highly doped silicon 1984
24 1 p. 183-
1 p.
artikel
35 Centrifugal on-center, flood-spray developing of positive photoresist 1984
24 1 p. 179-
1 p.
artikel
36 Charge loss in metal-nitride-oxide-semiconductor (MNOS) devices at high temperatures 1984
24 1 p. 182-
1 p.
artikel
37 Chemical impurities and structural imperfections in semiconductor silicon. Part II 1984
24 1 p. 182-183
2 p.
artikel
38 Chip architecture: a revolution brewing 1984
24 1 p. 178-
1 p.
artikel
39 Clean room garments: where from here? 1984
24 1 p. 178-
1 p.
artikel
40 Comparative study of thick film dielectrics 1984
24 1 p. 186-
1 p.
artikel
41 Comparison of memory chip organizations vs reliability in virtual memories 1984
24 1 p. 174-175
2 p.
artikel
42 Comparison of two unit cold standby reliability models with three types of repair facilities Murari, K.
1984
24 1 p. 35-49
15 p.
artikel
43 Computer aided design of hybrid circuits 1984
24 1 p. 186-187
2 p.
artikel
44 Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution Jordan, A.S.
1984
24 1 p. 101-124
24 p.
artikel
45 Correspondence of types I & II censored-sample estimators 1984
24 1 p. 176-
1 p.
artikel
46 Cost analysis of a 3-state 2-unit reparable system Gupta, P.P.
1984
24 1 p. 55-59
5 p.
artikel
47 Cost function analysis of a 3-state reparable system Gupta, P.P.
1984
24 1 p. 51-53
3 p.
artikel
48 4401904 Delay circuit used in semiconductor memory device White, LionelS
1984
24 1 p. 195-
1 p.
artikel
49 Design of a 108 pin VLSI package with low thermal resistance 1984
24 1 p. 180-
1 p.
artikel
50 Design of plasma deposition reactors 1984
24 1 p. 179-
1 p.
artikel
51 Determination of service effectiveness to individual terminals in multiterminal capacity-limited systems 1984
24 1 p. 177-
1 p.
artikel
52 Development of a multiple intermittent fault testing strategy 1984
24 1 p. 172-
1 p.
artikel
53 Developments in products, technology and design tools 1984
24 1 p. 180-
1 p.
artikel
54 Device, circuit and technology scaling to micron and submicron dimensions 1984
24 1 p. 181-
1 p.
artikel
55 4396933 Dielectrically isolated semiconductor devices Magdo, IngridE
1984
24 1 p. 196-
1 p.
artikel
56 Digital simulation of magnetic Czochralski flow under various laboratory conditions for silicon growth 1984
24 1 p. 182-
1 p.
artikel
57 Dynamic element matching puts trimless converters on chip 1984
24 1 p. 179-
1 p.
artikel
58 4409672 Dynamic semiconductor memory device Takemae, Yoshihir
1984
24 1 p. 191-
1 p.
artikel
59 Editorial Board 1984
24 1 p. IFC-
1 p.
artikel
60 Effect of surface reconstruction on the adsorption of Ge on clean Si (111) 1984
24 1 p. 183-
1 p.
artikel
61 Electrical characterization of Al-SiO2-Si (N-type ) tunnel structures, influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface 1984
24 1 p. 182-
1 p.
artikel
62 Electrical measurements on ion-implanted LPCVD polycrystalline silicon films 1984
24 1 p. 187-
1 p.
artikel
63 Electrical transport in thick film (Cermet) resistors 1984
24 1 p. 186-
1 p.
artikel
64 Electron beam induced conductivity in “PET” and “FEP” 1984
24 1 p. 188-
1 p.
artikel
65 Electron-beam systems for precision micron and submicron lithography 1984
24 1 p. 188-
1 p.
artikel
66 Electron-flood techniques to neutralize beam charging during ion implantation 1984
24 1 p. 188-
1 p.
artikel
67 Energy levels of interstitial manganese in silicon 1984
24 1 p. 184-
1 p.
artikel
68 Enhanced testing of VLSI devices 1984
24 1 p. 182-
1 p.
artikel
69 Environmental influence on field MTTR 1984
24 1 p. 171-172
2 p.
artikel
70 Estimating orthogonality deviation of a step-and-repeat lithographic system 1984
24 1 p. 179-
1 p.
artikel
71 Estimators for the 2-parameter Weibull distribution with progressively censored samples 1984
24 1 p. 175-
1 p.
artikel
72 Evolution of quality/reliability due to litigation 1984
24 1 p. 169-
1 p.
artikel
73 Failure rate calculations using a programmable calculator 1984
24 1 p. 174-
1 p.
artikel
74 Failures induced by electromigration in ECL 100k devices Canali, C.
1984
24 1 p. 77-100
24 p.
artikel
75 Finding faults—a dilemma for statisticians 1984
24 1 p. 174-
1 p.
artikel
76 GaAs microwave devices and circuits with submicron electron-beam defined features 1984
24 1 p. 188-
1 p.
artikel
77 Generalised availability measures for a two-unit intermittently used repairable system Kapur, P.K.
1984
24 1 p. 29-34
6 p.
artikel
78 Graphical techniques for fault detection analysis 1984
24 1 p. 177-
1 p.
artikel
79 Growth of dislocation-free bulk silicon crystals 1984
24 1 p. 184-
1 p.
artikel
80 Guidelines for finer lines in thick film circuitry 1984
24 1 p. 185-
1 p.
artikel
81 4409606 High breakdown voltage semiconductor device Wagenaar, Kornelis
1984
24 1 p. 191-
1 p.
artikel
82 Highly integrated 16-bit microprocessor ups performance, aids design of work station. Part 2 1984
24 1 p. 181-
1 p.
artikel
83 High-pressure oxidation in n-channel MOS technology 1984
24 1 p. 178-
1 p.
artikel
84 High rate aluminium etching in a batch loaded reactive ion etcher 1984
24 1 p. 188-
1 p.
artikel
85 High speed CMOS gate arrays 1984
24 1 p. 180-
1 p.
artikel
86 High-speed microelectronics for military applications 1984
24 1 p. 182-
1 p.
artikel
87 Hybrids for automotive applications 1984
24 1 p. 185-
1 p.
artikel
88 Hybrids—materials and processes for thick film. Hybrid applications (Part 1) 1984
24 1 p. 185-
1 p.
artikel
89 I challenge your beliefs about reliability. Part IV: processes and controls 1984
24 1 p. 169-
1 p.
artikel
90 I2L speed improvement by an ion implantation modification to a standard bipolar process 1984
24 1 p. 188-
1 p.
artikel
91 Impact of thermal cycling on computer reliability 1984
24 1 p. 177-
1 p.
artikel
92 Implementation and measurable output of software quality assurance 1984
24 1 p. 177-
1 p.
artikel
93 Implications of board testing at speed 1984
24 1 p. 176-
1 p.
artikel
94 Important considerations in selecting anisotropic plasma etching equipment 1984
24 1 p. 178-
1 p.
artikel
95 4412142 Integrated circuit incorporating low voltage and high voltage semiconductor devices Ragonese, Louis
1984
24 1 p. 190-
1 p.
artikel
96 Integrated circuit yield statistics 1984
24 1 p. 171-
1 p.
artikel
97 Integrated optical devices using amorphous As2S3 thin film 1984
24 1 p. 186-
1 p.
artikel
98 Integrated software tackles VLSI design 1984
24 1 p. 180-
1 p.
artikel
99 Ion beam etching in an evaporator 1984
24 1 p. 188-
1 p.
artikel
100 Ion-implantation associated defect production in silicon 1984
24 1 p. 187-
1 p.
artikel
101 Isothermal liquid phase epitaxy 1984
24 1 p. 183-
1 p.
artikel
102 l/f noise as a reliability estimation for solar cells 1984
24 1 p. 171-
1 p.
artikel
103 Linewidth measurement: approaching the submicron dimension 1984
24 1 p. 180-
1 p.
artikel
104 Lithography steps ahead to meet the VLSI challenge 1984
24 1 p. 178-
1 p.
artikel
105 Machine intelligence and related topics G.W.A.D.,
1984
24 1 p. 167-
1 p.
artikel
106 4395981 Magneto-semiconductor ignition system Podrapsky, Jiri
1984
24 1 p. 196-197
2 p.
artikel
107 Magnetron deposition of conductor metallization 1984
24 1 p. 186-
1 p.
artikel
108 Maintenance centered reliability 1984
24 1 p. 173-
1 p.
artikel
109 Memory testing: as dynamic as ever 1984
24 1 p. 180-
1 p.
artikel
110 4404662 Method and circuit for accessing an integrated semiconductor memory Masenas, Charles
1984
24 1 p. 192-193
2 p.
artikel
111 4392893 Method for controlling characteristics of a semiconductor integrated by circuit X-ray bombardment Du, NguyenT
1984
24 1 p. 199-
1 p.
artikel
112 4403241 Method for etching III–V semiconductors and devices made by this method Butherus, AlexanderD
1984
24 1 p. 194-
1 p.
artikel
113 4391650 Method for fabricating improved complementary metal oxide semiconductor devices Pfeifer, Robert
1984
24 1 p. 199-200
2 p.
artikel
114 4411981 Method for forming a pattern in a thin-film transistor having tellurium semiconductor layer Minezaki, Shigehiro
1984
24 1 p. 190-
1 p.
artikel
115 4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity Nagakubo, Yoshihide
1984
24 1 p. 197-198
2 p.
artikel
116 4408387 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask Kiriseko, Tadashi
1984
24 1 p. 191-
1 p.
artikel
117 4409724 Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby Tasch, Aloysiousf
1984
24 1 p. 190-
1 p.
artikel
118 4408386 Method of manufacturing semiconductor integrated circuit devices Takayashiki, Tetsuya
1984
24 1 p. 192-
1 p.
artikel
119 4394181 Methods of manufacturing a semiconductor device having a channel region spaced inside channel stoppers Nicholas, KeithH
1984
24 1 p. 198-
1 p.
artikel
120 Microelectronic system reliability prediction 1984
24 1 p. 176-
1 p.
artikel
121 Microprocessor chip integrates a host of peripheral functions to simplify systems 1984
24 1 p. 180-
1 p.
artikel
122 Microscopic investigations of semiconductor interfaces 1984
24 1 p. 183-
1 p.
artikel
123 Mid-UV lithography with positive resist—a multifactorial tool and process evaluation 1984
24 1 p. 180-
1 p.
artikel
124 Minimizing the average cost of testing coherent systems: complexity and approximate algorithms 1984
24 1 p. 172-
1 p.
artikel
125 Minority carrier recombination in heavily-doped silicon 1984
24 1 p. 183-184
2 p.
artikel
126 Mix-and-match alignment: cost effective for VLSI 1984
24 1 p. 179-
1 p.
artikel
127 Models for accelerated life-testing 1984
24 1 p. 177-
1 p.
artikel
128 Moisture control in photolithography areas 1984
24 1 p. 181-
1 p.
artikel
129 4393478 Monolithically integrated semiconductor memory with dummy and charge equalization cells Kantz, Dieter
1984
24 1 p. 198-199
2 p.
artikel
130 MOS and bipolar VLSI technologies using electron-beam lithography 1984
24 1 p. 187-
1 p.
artikel
131 Mossbauer study of iron hydride formation by low temperature ion implantation 1984
24 1 p. 188-
1 p.
artikel
132 Moving probes replace bed of nails 1984
24 1 p. 181-
1 p.
artikel
133 Multilayer resist systems and processing 1984
24 1 p. 179-
1 p.
artikel
134 Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire 1984
24 1 p. 187-
1 p.
artikel
135 New analytical models for logistics support cost and life cycle cost vs reliability function Govil, K.K.
1984
24 1 p. 61-63
3 p.
artikel
136 4395724 Nonvolatile semiconductor memory device Iwahashi, Hirosh
1984
24 1 p. 197-
1 p.
artikel
137 Nuclear-power-plant malfunction analysis 1984
24 1 p. 171-
1 p.
artikel
138 Numerical evaluation of instantaneous availability 1984
24 1 p. 175-
1 p.
artikel
139 Onshore vs offshore final test 1984
24 1 p. 175-
1 p.
artikel
140 On some reliability implications of electronic circuit design 1984
24 1 p. 175-176
2 p.
artikel
141 On the survivor function of a mixture in life testing 1984
24 1 p. 174-
1 p.
artikel
142 Optimal number of failures before replacement time 1984
24 1 p. 174-
1 p.
artikel
143 Optimal reliability design by a transformation technique 1984
24 1 p. 171-
1 p.
artikel
144 Optimal sequencing of items in a consecutive-2-out-of-n system 1984
24 1 p. 174-
1 p.
artikel
145 Optimum simple step-stress plans for accelerated life testing 1984
24 1 p. 176-177
2 p.
artikel
146 Pellicle mask protection for 1: 1 projection lithography 1984
24 1 p. 179-
1 p.
artikel
147 Percentiles of pooled estimates of Weibull parameters 1984
24 1 p. 171-
1 p.
artikel
148 Performance and reliability analysis of a microcomputer pool 1984
24 1 p. 172-
1 p.
artikel
149 Photoresist technology update 1984
24 1 p. 179-
1 p.
artikel
150 Photovoltaic measurement of bandgap narrowing in moderately doped silicon 1984
24 1 p. 183-
1 p.
artikel
151 Pitfalls of software quality assurance management 1984
24 1 p. 171-
1 p.
artikel
152 4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions Herman, Thomas
1984
24 1 p. 189-
1 p.
artikel
153 Planning of aging experiments for semiconductor devices by means of the assurance test matrix Jordan, A.S.
1984
24 1 p. 125-146
22 p.
artikel
154 Plasma deposition of inorganic films 1984
24 1 p. 185-
1 p.
artikel
155 Plasma etcher capital equipment design trends 1984
24 1 p. 181-
1 p.
artikel
156 Plasma processing—an art or a science? 1984
24 1 p. 179-
1 p.
artikel
157 Point defects in II–VI compounds 1984
24 1 p. 184-
1 p.
artikel
158 Positive-resist processing considerations for VLSI lithography 1984
24 1 p. 179-
1 p.
artikel
159 Practical application of Bayes' formulas 1984
24 1 p. 173-
1 p.
artikel
160 Precise MMIC parameters yielded by 18-GHz wafer probe 1984
24 1 p. 178-
1 p.
artikel
161 Predicting burn-in performance for a new design 1984
24 1 p. 175-
1 p.
artikel
162 Preparation of large-area, electron-transparent silicon specimens by anisotropic etching 1984
24 1 p. 184-
1 p.
artikel
163 Prevention and removal of programming defects 1984
24 1 p. 177-
1 p.
artikel
164 Price war shrinks home-computer profits 1984
24 1 p. 177-
1 p.
artikel
165 Properties of low pressure CVD tungsten silicide as related to IC process requirements 1984
24 1 p. 185-
1 p.
artikel
166 Publications, notices, calls for papers, etc. 1984
24 1 p. 5-
1 p.
artikel
167 Qualification of connectors manufactured with diffused gold R156 inlay contacts 1984
24 1 p. 169-170
2 p.
artikel
168 Quality assurance for computer programs 1984
24 1 p. 174-
1 p.
artikel
169 RAM analysis requirements for avionic systems 1984
24 1 p. 173-
1 p.
artikel
170 Reactive ion etching of polysilicon and tantalum silicide 1984
24 1 p. 187-188
2 p.
artikel
171 Recent advances in hetero-epitaxial silicon-on-insulator technology. Part I 1984
24 1 p. 178-
1 p.
artikel
172 Recent advances in hetero-epitaxial silicon-on-insulator technology, Part II 1984
24 1 p. 181-
1 p.
artikel
173 Reliability and maintainability of a multicomponent series-parallel system with simultaneous failure and repair priorities Kodama, Masanori
1984
24 1 p. 147-164
18 p.
artikel
174 Reliability and operational effectiveness 1984
24 1 p. 9-
1 p.
artikel
175 Reliability is enhanced by TAAF testing 1984
24 1 p. 176-
1 p.
artikel
176 Reliability of a signal processing system 1984
24 1 p. 172-
1 p.
artikel
177 Reliability of medium-voltage vacuum power circuit-breakers 1984
24 1 p. 170-
1 p.
artikel
178 Reliability of shuttle mission control center software 1984
24 1 p. 173-
1 p.
artikel
179 Reliability prediction for microelectronic systems 1984
24 1 p. 174-
1 p.
artikel
180 Repair/reliability guarantee programs can work 1984
24 1 p. 173-
1 p.
artikel
181 Resists for fine-line lithography 1984
24 1 p. 180-
1 p.
artikel
182 Ridge detection of culprit variables 1984
24 1 p. 173-
1 p.
artikel
183 Scanned electron-beam probe shows surface acoustic waves in action 1984
24 1 p. 187-
1 p.
artikel
184 Second harmonic generation in centro-symmetric semiconductors 1984
24 1 p. 185-
1 p.
artikel
185 Selective etching of silicon dioxide films 1984
24 1 p. 180-
1 p.
artikel
186 4412237 Semiconductor device Matsumura, Nobutake
1984
24 1 p. 189-
1 p.
artikel
187 4403396 Semiconductor device design and process Stein, RichardJ
1984
24 1 p. 194-
1 p.
artikel
188 4404048 Semiconductor device manufacture Vogelzang, DirkA
1984
24 1 p. 193-
1 p.
artikel
189 4395726 Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films Maeguchi, Kenji
1984
24 1 p. 197-
1 p.
artikel
190 4404654 Semiconductor device system Kamuro, Setsufumi
1984
24 1 p. 193-
1 p.
artikel
191 4402001 Semiconductor element capable of withstanding high voltage Momma, Naohiro
1984
24 1 p. 195-
1 p.
artikel
192 4394625 Semiconductor integrated circuit device Sakai, Koich
1984
24 1 p. 198-
1 p.
artikel
193 4408385 Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer Mohan, RaoGR
1984
24 1 p. 192-
1 p.
artikel
194 4409674 Semiconductor memory Takahashi, Yukio
1984
24 1 p. 191-
1 p.
artikel
195 4408304 Semiconductor memory Nishizawa, Jun-ichi
1984
24 1 p. 192-
1 p.
artikel
196 4404657 Semiconductor memory circuit Furuyama, Tohr
1984
24 1 p. 193-
1 p.
artikel
197 4402066 Semiconductor memory circuit Itoh, Hideo
1984
24 1 p. 195-
1 p.
artikel
198 4398267 Semiconductor memory device Furuyama, Tohru
1984
24 1 p. 196-
1 p.
artikel
199 4403307 Semiconductor memory device Maeda, Koh-ichi
1984
24 1 p. 194-
1 p.
artikel
200 4403306 Semiconductor memory operable as static RAM or earom Tokushige, Kaoru
1984
24 1 p. 194-
1 p.
artikel
201 4392069 Semiconductor switch Pfeifer, Robert
1984
24 1 p. 199-
1 p.
artikel
202 Semi-custom I.C.'s—reliable and productive 1984
24 1 p. 170-
1 p.
artikel
203 Sequential method for comparing two constant failure-rates 1984
24 1 p. 176-
1 p.
artikel
204 Significant subtleties of stress screening 1984
24 1 p. 172-
1 p.
artikel
205 Silicon and hybrid micro-electronic sensors 1984
24 1 p. 178-
1 p.
artikel
206 Silicon epitaxial wafer profiling using the mercury-silicon Schottky diode differential capacitance method 1984
24 1 p. 178-
1 p.
artikel
207 Silicon oxidation: the status and new directions 1984
24 1 p. 183-
1 p.
artikel
208 Sockets for integrated circuits 1984
24 1 p. 180-
1 p.
artikel
209 Software—a critical dimension in testing LSI/VLSI chips 1984
24 1 p. 182-
1 p.
artikel
210 Sources of semiconductor wafer contamination 1984
24 1 p. 179-
1 p.
artikel
211 Sparing for repairable, redundant systems 1984
24 1 p. 174-
1 p.
artikel
212 Standard cells hatch semicustom micros 1984
24 1 p. 182-
1 p.
artikel
213 Superclean chemicals: a status report 1984
24 1 p. 179-
1 p.
artikel
214 Switching to bipolar technology for the coming 100,000-gate arrays 1984
24 1 p. 181-
1 p.
artikel
215 Tactical air war: A SIMSCRIPT model Sherif, Y.S.
1984
24 1 p. 65-71
7 p.
artikel
216 Technology modeling for VLSI devices 1984
24 1 p. 181-
1 p.
artikel
217 Temperature gradient zone melting 1984
24 1 p. 184-
1 p.
artikel
218 Testability/fault isolation by adaptive strategy 1984
24 1 p. 174-
1 p.
artikel
219 Testing and laser adjustment for production: 1983 1984
24 1 p. 188-
1 p.
artikel
220 Testing logic arrays 1984
24 1 p. 182-
1 p.
artikel
221 The application of a life cycle cost model to modular electronic systems 1984
24 1 p. 172-173
2 p.
artikel
222 The base current recombining at the oxidized silicon surface 1984
24 1 p. 183-
1 p.
artikel
223 The changing face of engineering 1984
24 1 p. 178-
1 p.
artikel
224 The development of device lithography 1984
24 1 p. 180-
1 p.
artikel
225 The future of custom 1984
24 1 p. 177-
1 p.
artikel
226 The hypergeometric distribution model for predicting the reliability of softwares Zhi, Huang Xi
1984
24 1 p. 11-20
10 p.
artikel
227 The influence of an external electric field on the silicon homoepitaxy process 1984
24 1 p. 185-
1 p.
artikel
228 The influence of conductor particle size distribution on the blending curve of epoxy-based thick film resistors 1984
24 1 p. 186-
1 p.
artikel
229 The influence of contaminants during the firing of inks 1984
24 1 p. 186-
1 p.
artikel
230 The intermittent multi-layer board—a case history 1984
24 1 p. 170-
1 p.
artikel
231 The nature of temperature dependence of energy gaps in layer semiconductors 1984
24 1 p. 183-
1 p.
artikel
232 The reliability of weather forecasting Bergmann, P.J.
1984
24 1 p. 73-76
4 p.
artikel
233 Thermal imager's scanning technique boosts reliability 1984
24 1 p. 171-
1 p.
artikel
234 The role of the manufacturing defects analyser 1984
24 1 p. 171-
1 p.
artikel
235 Thick film fail-safe resistors 1984
24 1 p. 186-
1 p.
artikel
236 4400715 Thin film semiconductor device and method for manufacture Barbee, Steven
1984
24 1 p. 195-196
2 p.
artikel
237 Tomorrow's semiconductor memories 1984
24 1 p. 182-
1 p.
artikel
238 Towards a more thorough paste specification 1984
24 1 p. 187-
1 p.
artikel
239 Transparent conductive films of tin oxide-preparation and properties 1984
24 1 p. 186-
1 p.
artikel
240 Trends in semi-custom integrated circuits—an overiew 1984
24 1 p. 178-
1 p.
artikel
241 Tungsten titanium diffusion barrier metallization 1984
24 1 p. 181-
1 p.
artikel
242 Two level allocation method of system reliability 1984
24 1 p. 171-
1 p.
artikel
243 Using the decomposition-tree of a network in reliability computation 1984
24 1 p. 175-
1 p.
artikel
244 Vapour phase growth of some II–VI compounds 1984
24 1 p. 184-
1 p.
artikel
245 Verification of the model for phosphorus diffusion from oxide sources into silicon 1984
24 1 p. 185-
1 p.
artikel
246 Versatile packaging concept using thick film hybrids for analog and digital circuits 1984
24 1 p. 187-
1 p.
artikel
247 Video designers move toward ICs 1984
24 1 p. 182-
1 p.
artikel
248 VLSI polysilicon etching: a comparison of different techniques 1984
24 1 p. 178-
1 p.
artikel
249 VLSI test system grows in pin count and functionality 1984
24 1 p. 182-
1 p.
artikel
250 Warranty definition for bulk availability 1984
24 1 p. 169-
1 p.
artikel
251 Wavesoldering discrete chip components 1984
24 1 p. 180-
1 p.
artikel
252 What makes CMOS run? 1984
24 1 p. 178-
1 p.
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253 XeF2 and F-atom reactions with Si: their significance for plasma etching 1984
24 1 p. 184-185
2 p.
artikel
254 1X mask and reticle technology 1984
24 1 p. 180-
1 p.
artikel
255 X-ray lithography for VLSI 1984
24 1 p. 180-181
2 p.
artikel
                             255 gevonden resultaten
 
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