| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC and DC conductivity in amorphous silicon-hydrogen films
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 2 |
Advances in silicon technology for the semiconductor industry, Part I
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 3 |
A fault-tolerant system architecture for Navy applications
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 4 |
A large scale hybrid thermal print head
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 5 |
ALU, multiplier chips zip through IEEE floating-point operations
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 6 |
A moments compiler for computing Bayes intervals for complex systems
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 7 |
Analysis of two-unit redundant system under partial failure and two types of repairs
|
Goel, L.R.
|
|
1984
|
24 |
1 |
p. 21-24
4 p.
|
artikel
|
| 8 |
A new computer-aided simulation model for polycrystalline silicon film resistors
|
|
|
1984
|
24 |
1 |
p. 185-186
2 p.
|
artikel
|
| 9 |
Application of automatic alignment to MOS processing in projection printing
|
|
|
1984
|
24 |
1 |
p. 179-180
2 p.
|
artikel
|
| 10 |
Applications of focused ion beams to microlithography
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 11 |
A practical approach to the testing of a high-volume custom linear IC
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 12 |
A review of RAM testing methodologies
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 13 |
Ashing process for dry photolithography
|
Singh, Awatar
|
|
1984
|
24 |
1 |
p. 165-
1 p.
|
artikel
|
| 14 |
A software evaluation: results and recommendations
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 15 |
Aspects of accelerated ageing tests used on connectors and terminals for the U.K. external telephone network
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 16 |
Assessment of micropackaged integrated circuits in high reliability applications
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 17 |
Assuring VLSI quality and reliability with test patterns
|
|
|
1984
|
24 |
1 |
p. 170-171
2 p.
|
artikel
|
| 18 |
A study of some factors influencing the wear resistance of lubricated gold contacts
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 19 |
A suspended boat loader based on the cantilever principle
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 20 |
A systems approach to 1-μm NMOS
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 21 |
A two-level sparing approach for plug-in modules
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 22 |
A two-unit parallel redundant system with three modes and bivariate exponential lifetimes
|
Goel, L.R.
|
|
1984
|
24 |
1 |
p. 25-28
4 p.
|
artikel
|
| 23 |
Automated thermal reliability analysis of hybrids
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 24 |
Availability considerations for satellite links
|
|
|
1984
|
24 |
1 |
p. 173-174
2 p.
|
artikel
|
| 25 |
Basic chemistry and mechanisms of plasma etching
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 26 |
Birth-death and bug counting
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 27 |
BIT analysis and design reliability
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 28 |
32-bit processor chip integrates major system functions
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 29 |
Bold Koreans push into leading-edge ICs
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 30 |
CAD system coordinates complete semicustom chip design
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 31 |
CAD systems: meeting the challenge of VLSI design
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 32 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984
|
24 |
1 |
p. 1-3
3 p.
|
artikel
|
| 33 |
Can electron beam mask making keep pace with advancing technology?
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 34 |
Carrier recombination and lifetime in highly doped silicon
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 35 |
Centrifugal on-center, flood-spray developing of positive photoresist
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 36 |
Charge loss in metal-nitride-oxide-semiconductor (MNOS) devices at high temperatures
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 37 |
Chemical impurities and structural imperfections in semiconductor silicon. Part II
|
|
|
1984
|
24 |
1 |
p. 182-183
2 p.
|
artikel
|
| 38 |
Chip architecture: a revolution brewing
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 39 |
Clean room garments: where from here?
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 40 |
Comparative study of thick film dielectrics
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 41 |
Comparison of memory chip organizations vs reliability in virtual memories
|
|
|
1984
|
24 |
1 |
p. 174-175
2 p.
|
artikel
|
| 42 |
Comparison of two unit cold standby reliability models with three types of repair facilities
|
Murari, K.
|
|
1984
|
24 |
1 |
p. 35-49
15 p.
|
artikel
|
| 43 |
Computer aided design of hybrid circuits
|
|
|
1984
|
24 |
1 |
p. 186-187
2 p.
|
artikel
|
| 44 |
Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution
|
Jordan, A.S.
|
|
1984
|
24 |
1 |
p. 101-124
24 p.
|
artikel
|
| 45 |
Correspondence of types I & II censored-sample estimators
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 46 |
Cost analysis of a 3-state 2-unit reparable system
|
Gupta, P.P.
|
|
1984
|
24 |
1 |
p. 55-59
5 p.
|
artikel
|
| 47 |
Cost function analysis of a 3-state reparable system
|
Gupta, P.P.
|
|
1984
|
24 |
1 |
p. 51-53
3 p.
|
artikel
|
| 48 |
4401904 Delay circuit used in semiconductor memory device
|
White, LionelS
|
|
1984
|
24 |
1 |
p. 195-
1 p.
|
artikel
|
| 49 |
Design of a 108 pin VLSI package with low thermal resistance
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 50 |
Design of plasma deposition reactors
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 51 |
Determination of service effectiveness to individual terminals in multiterminal capacity-limited systems
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 52 |
Development of a multiple intermittent fault testing strategy
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 53 |
Developments in products, technology and design tools
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 54 |
Device, circuit and technology scaling to micron and submicron dimensions
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 55 |
4396933 Dielectrically isolated semiconductor devices
|
Magdo, IngridE
|
|
1984
|
24 |
1 |
p. 196-
1 p.
|
artikel
|
| 56 |
Digital simulation of magnetic Czochralski flow under various laboratory conditions for silicon growth
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 57 |
Dynamic element matching puts trimless converters on chip
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 58 |
4409672 Dynamic semiconductor memory device
|
Takemae, Yoshihir
|
|
1984
|
24 |
1 |
p. 191-
1 p.
|
artikel
|
| 59 |
Editorial Board
|
|
|
1984
|
24 |
1 |
p. IFC-
1 p.
|
artikel
|
| 60 |
Effect of surface reconstruction on the adsorption of Ge on clean Si (111)
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 61 |
Electrical characterization of Al-SiO2-Si (N-type ) tunnel structures, influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 62 |
Electrical measurements on ion-implanted LPCVD polycrystalline silicon films
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 63 |
Electrical transport in thick film (Cermet) resistors
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 64 |
Electron beam induced conductivity in “PET” and “FEP”
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 65 |
Electron-beam systems for precision micron and submicron lithography
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 66 |
Electron-flood techniques to neutralize beam charging during ion implantation
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 67 |
Energy levels of interstitial manganese in silicon
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 68 |
Enhanced testing of VLSI devices
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 69 |
Environmental influence on field MTTR
|
|
|
1984
|
24 |
1 |
p. 171-172
2 p.
|
artikel
|
| 70 |
Estimating orthogonality deviation of a step-and-repeat lithographic system
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 71 |
Estimators for the 2-parameter Weibull distribution with progressively censored samples
|
|
|
1984
|
24 |
1 |
p. 175-
1 p.
|
artikel
|
| 72 |
Evolution of quality/reliability due to litigation
|
|
|
1984
|
24 |
1 |
p. 169-
1 p.
|
artikel
|
| 73 |
Failure rate calculations using a programmable calculator
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 74 |
Failures induced by electromigration in ECL 100k devices
|
Canali, C.
|
|
1984
|
24 |
1 |
p. 77-100
24 p.
|
artikel
|
| 75 |
Finding faults—a dilemma for statisticians
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 76 |
GaAs microwave devices and circuits with submicron electron-beam defined features
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 77 |
Generalised availability measures for a two-unit intermittently used repairable system
|
Kapur, P.K.
|
|
1984
|
24 |
1 |
p. 29-34
6 p.
|
artikel
|
| 78 |
Graphical techniques for fault detection analysis
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 79 |
Growth of dislocation-free bulk silicon crystals
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 80 |
Guidelines for finer lines in thick film circuitry
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 81 |
4409606 High breakdown voltage semiconductor device
|
Wagenaar, Kornelis
|
|
1984
|
24 |
1 |
p. 191-
1 p.
|
artikel
|
| 82 |
Highly integrated 16-bit microprocessor ups performance, aids design of work station. Part 2
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 83 |
High-pressure oxidation in n-channel MOS technology
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 84 |
High rate aluminium etching in a batch loaded reactive ion etcher
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 85 |
High speed CMOS gate arrays
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 86 |
High-speed microelectronics for military applications
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 87 |
Hybrids for automotive applications
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 88 |
Hybrids—materials and processes for thick film. Hybrid applications (Part 1)
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 89 |
I challenge your beliefs about reliability. Part IV: processes and controls
|
|
|
1984
|
24 |
1 |
p. 169-
1 p.
|
artikel
|
| 90 |
I2L speed improvement by an ion implantation modification to a standard bipolar process
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 91 |
Impact of thermal cycling on computer reliability
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 92 |
Implementation and measurable output of software quality assurance
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 93 |
Implications of board testing at speed
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 94 |
Important considerations in selecting anisotropic plasma etching equipment
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 95 |
4412142 Integrated circuit incorporating low voltage and high voltage semiconductor devices
|
Ragonese, Louis
|
|
1984
|
24 |
1 |
p. 190-
1 p.
|
artikel
|
| 96 |
Integrated circuit yield statistics
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 97 |
Integrated optical devices using amorphous As2S3 thin film
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 98 |
Integrated software tackles VLSI design
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 99 |
Ion beam etching in an evaporator
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 100 |
Ion-implantation associated defect production in silicon
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 101 |
Isothermal liquid phase epitaxy
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 102 |
l/f noise as a reliability estimation for solar cells
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 103 |
Linewidth measurement: approaching the submicron dimension
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 104 |
Lithography steps ahead to meet the VLSI challenge
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 105 |
Machine intelligence and related topics
|
G.W.A.D.,
|
|
1984
|
24 |
1 |
p. 167-
1 p.
|
artikel
|
| 106 |
4395981 Magneto-semiconductor ignition system
|
Podrapsky, Jiri
|
|
1984
|
24 |
1 |
p. 196-197
2 p.
|
artikel
|
| 107 |
Magnetron deposition of conductor metallization
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 108 |
Maintenance centered reliability
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 109 |
Memory testing: as dynamic as ever
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 110 |
4404662 Method and circuit for accessing an integrated semiconductor memory
|
Masenas, Charles
|
|
1984
|
24 |
1 |
p. 192-193
2 p.
|
artikel
|
| 111 |
4392893 Method for controlling characteristics of a semiconductor integrated by circuit X-ray bombardment
|
Du, NguyenT
|
|
1984
|
24 |
1 |
p. 199-
1 p.
|
artikel
|
| 112 |
4403241 Method for etching III–V semiconductors and devices made by this method
|
Butherus, AlexanderD
|
|
1984
|
24 |
1 |
p. 194-
1 p.
|
artikel
|
| 113 |
4391650 Method for fabricating improved complementary metal oxide semiconductor devices
|
Pfeifer, Robert
|
|
1984
|
24 |
1 |
p. 199-200
2 p.
|
artikel
|
| 114 |
4411981 Method for forming a pattern in a thin-film transistor having tellurium semiconductor layer
|
Minezaki, Shigehiro
|
|
1984
|
24 |
1 |
p. 190-
1 p.
|
artikel
|
| 115 |
4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity
|
Nagakubo, Yoshihide
|
|
1984
|
24 |
1 |
p. 197-198
2 p.
|
artikel
|
| 116 |
4408387 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
|
Kiriseko, Tadashi
|
|
1984
|
24 |
1 |
p. 191-
1 p.
|
artikel
|
| 117 |
4409724 Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
|
Tasch, Aloysiousf
|
|
1984
|
24 |
1 |
p. 190-
1 p.
|
artikel
|
| 118 |
4408386 Method of manufacturing semiconductor integrated circuit devices
|
Takayashiki, Tetsuya
|
|
1984
|
24 |
1 |
p. 192-
1 p.
|
artikel
|
| 119 |
4394181 Methods of manufacturing a semiconductor device having a channel region spaced inside channel stoppers
|
Nicholas, KeithH
|
|
1984
|
24 |
1 |
p. 198-
1 p.
|
artikel
|
| 120 |
Microelectronic system reliability prediction
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 121 |
Microprocessor chip integrates a host of peripheral functions to simplify systems
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 122 |
Microscopic investigations of semiconductor interfaces
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 123 |
Mid-UV lithography with positive resist—a multifactorial tool and process evaluation
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 124 |
Minimizing the average cost of testing coherent systems: complexity and approximate algorithms
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 125 |
Minority carrier recombination in heavily-doped silicon
|
|
|
1984
|
24 |
1 |
p. 183-184
2 p.
|
artikel
|
| 126 |
Mix-and-match alignment: cost effective for VLSI
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 127 |
Models for accelerated life-testing
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 128 |
Moisture control in photolithography areas
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 129 |
4393478 Monolithically integrated semiconductor memory with dummy and charge equalization cells
|
Kantz, Dieter
|
|
1984
|
24 |
1 |
p. 198-199
2 p.
|
artikel
|
| 130 |
MOS and bipolar VLSI technologies using electron-beam lithography
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 131 |
Mossbauer study of iron hydride formation by low temperature ion implantation
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 132 |
Moving probes replace bed of nails
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 133 |
Multilayer resist systems and processing
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 134 |
Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 135 |
New analytical models for logistics support cost and life cycle cost vs reliability function
|
Govil, K.K.
|
|
1984
|
24 |
1 |
p. 61-63
3 p.
|
artikel
|
| 136 |
4395724 Nonvolatile semiconductor memory device
|
Iwahashi, Hirosh
|
|
1984
|
24 |
1 |
p. 197-
1 p.
|
artikel
|
| 137 |
Nuclear-power-plant malfunction analysis
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 138 |
Numerical evaluation of instantaneous availability
|
|
|
1984
|
24 |
1 |
p. 175-
1 p.
|
artikel
|
| 139 |
Onshore vs offshore final test
|
|
|
1984
|
24 |
1 |
p. 175-
1 p.
|
artikel
|
| 140 |
On some reliability implications of electronic circuit design
|
|
|
1984
|
24 |
1 |
p. 175-176
2 p.
|
artikel
|
| 141 |
On the survivor function of a mixture in life testing
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 142 |
Optimal number of failures before replacement time
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 143 |
Optimal reliability design by a transformation technique
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 144 |
Optimal sequencing of items in a consecutive-2-out-of-n system
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 145 |
Optimum simple step-stress plans for accelerated life testing
|
|
|
1984
|
24 |
1 |
p. 176-177
2 p.
|
artikel
|
| 146 |
Pellicle mask protection for 1: 1 projection lithography
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 147 |
Percentiles of pooled estimates of Weibull parameters
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 148 |
Performance and reliability analysis of a microcomputer pool
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 149 |
Photoresist technology update
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 150 |
Photovoltaic measurement of bandgap narrowing in moderately doped silicon
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 151 |
Pitfalls of software quality assurance management
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 152 |
4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
|
Herman, Thomas
|
|
1984
|
24 |
1 |
p. 189-
1 p.
|
artikel
|
| 153 |
Planning of aging experiments for semiconductor devices by means of the assurance test matrix
|
Jordan, A.S.
|
|
1984
|
24 |
1 |
p. 125-146
22 p.
|
artikel
|
| 154 |
Plasma deposition of inorganic films
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 155 |
Plasma etcher capital equipment design trends
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 156 |
Plasma processing—an art or a science?
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 157 |
Point defects in II–VI compounds
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 158 |
Positive-resist processing considerations for VLSI lithography
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 159 |
Practical application of Bayes' formulas
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 160 |
Precise MMIC parameters yielded by 18-GHz wafer probe
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 161 |
Predicting burn-in performance for a new design
|
|
|
1984
|
24 |
1 |
p. 175-
1 p.
|
artikel
|
| 162 |
Preparation of large-area, electron-transparent silicon specimens by anisotropic etching
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 163 |
Prevention and removal of programming defects
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 164 |
Price war shrinks home-computer profits
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 165 |
Properties of low pressure CVD tungsten silicide as related to IC process requirements
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 166 |
Publications, notices, calls for papers, etc.
|
|
|
1984
|
24 |
1 |
p. 5-
1 p.
|
artikel
|
| 167 |
Qualification of connectors manufactured with diffused gold R156 inlay contacts
|
|
|
1984
|
24 |
1 |
p. 169-170
2 p.
|
artikel
|
| 168 |
Quality assurance for computer programs
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 169 |
RAM analysis requirements for avionic systems
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 170 |
Reactive ion etching of polysilicon and tantalum silicide
|
|
|
1984
|
24 |
1 |
p. 187-188
2 p.
|
artikel
|
| 171 |
Recent advances in hetero-epitaxial silicon-on-insulator technology. Part I
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 172 |
Recent advances in hetero-epitaxial silicon-on-insulator technology, Part II
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 173 |
Reliability and maintainability of a multicomponent series-parallel system with simultaneous failure and repair priorities
|
Kodama, Masanori
|
|
1984
|
24 |
1 |
p. 147-164
18 p.
|
artikel
|
| 174 |
Reliability and operational effectiveness
|
|
|
1984
|
24 |
1 |
p. 9-
1 p.
|
artikel
|
| 175 |
Reliability is enhanced by TAAF testing
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 176 |
Reliability of a signal processing system
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 177 |
Reliability of medium-voltage vacuum power circuit-breakers
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 178 |
Reliability of shuttle mission control center software
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 179 |
Reliability prediction for microelectronic systems
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 180 |
Repair/reliability guarantee programs can work
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 181 |
Resists for fine-line lithography
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 182 |
Ridge detection of culprit variables
|
|
|
1984
|
24 |
1 |
p. 173-
1 p.
|
artikel
|
| 183 |
Scanned electron-beam probe shows surface acoustic waves in action
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 184 |
Second harmonic generation in centro-symmetric semiconductors
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 185 |
Selective etching of silicon dioxide films
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 186 |
4412237 Semiconductor device
|
Matsumura, Nobutake
|
|
1984
|
24 |
1 |
p. 189-
1 p.
|
artikel
|
| 187 |
4403396 Semiconductor device design and process
|
Stein, RichardJ
|
|
1984
|
24 |
1 |
p. 194-
1 p.
|
artikel
|
| 188 |
4404048 Semiconductor device manufacture
|
Vogelzang, DirkA
|
|
1984
|
24 |
1 |
p. 193-
1 p.
|
artikel
|
| 189 |
4395726 Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
|
Maeguchi, Kenji
|
|
1984
|
24 |
1 |
p. 197-
1 p.
|
artikel
|
| 190 |
4404654 Semiconductor device system
|
Kamuro, Setsufumi
|
|
1984
|
24 |
1 |
p. 193-
1 p.
|
artikel
|
| 191 |
4402001 Semiconductor element capable of withstanding high voltage
|
Momma, Naohiro
|
|
1984
|
24 |
1 |
p. 195-
1 p.
|
artikel
|
| 192 |
4394625 Semiconductor integrated circuit device
|
Sakai, Koich
|
|
1984
|
24 |
1 |
p. 198-
1 p.
|
artikel
|
| 193 |
4408385 Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
|
Mohan, RaoGR
|
|
1984
|
24 |
1 |
p. 192-
1 p.
|
artikel
|
| 194 |
4409674 Semiconductor memory
|
Takahashi, Yukio
|
|
1984
|
24 |
1 |
p. 191-
1 p.
|
artikel
|
| 195 |
4408304 Semiconductor memory
|
Nishizawa, Jun-ichi
|
|
1984
|
24 |
1 |
p. 192-
1 p.
|
artikel
|
| 196 |
4404657 Semiconductor memory circuit
|
Furuyama, Tohr
|
|
1984
|
24 |
1 |
p. 193-
1 p.
|
artikel
|
| 197 |
4402066 Semiconductor memory circuit
|
Itoh, Hideo
|
|
1984
|
24 |
1 |
p. 195-
1 p.
|
artikel
|
| 198 |
4398267 Semiconductor memory device
|
Furuyama, Tohru
|
|
1984
|
24 |
1 |
p. 196-
1 p.
|
artikel
|
| 199 |
4403307 Semiconductor memory device
|
Maeda, Koh-ichi
|
|
1984
|
24 |
1 |
p. 194-
1 p.
|
artikel
|
| 200 |
4403306 Semiconductor memory operable as static RAM or earom
|
Tokushige, Kaoru
|
|
1984
|
24 |
1 |
p. 194-
1 p.
|
artikel
|
| 201 |
4392069 Semiconductor switch
|
Pfeifer, Robert
|
|
1984
|
24 |
1 |
p. 199-
1 p.
|
artikel
|
| 202 |
Semi-custom I.C.'s—reliable and productive
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 203 |
Sequential method for comparing two constant failure-rates
|
|
|
1984
|
24 |
1 |
p. 176-
1 p.
|
artikel
|
| 204 |
Significant subtleties of stress screening
|
|
|
1984
|
24 |
1 |
p. 172-
1 p.
|
artikel
|
| 205 |
Silicon and hybrid micro-electronic sensors
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 206 |
Silicon epitaxial wafer profiling using the mercury-silicon Schottky diode differential capacitance method
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 207 |
Silicon oxidation: the status and new directions
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 208 |
Sockets for integrated circuits
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 209 |
Software—a critical dimension in testing LSI/VLSI chips
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 210 |
Sources of semiconductor wafer contamination
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 211 |
Sparing for repairable, redundant systems
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 212 |
Standard cells hatch semicustom micros
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 213 |
Superclean chemicals: a status report
|
|
|
1984
|
24 |
1 |
p. 179-
1 p.
|
artikel
|
| 214 |
Switching to bipolar technology for the coming 100,000-gate arrays
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 215 |
Tactical air war: A SIMSCRIPT model
|
Sherif, Y.S.
|
|
1984
|
24 |
1 |
p. 65-71
7 p.
|
artikel
|
| 216 |
Technology modeling for VLSI devices
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 217 |
Temperature gradient zone melting
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 218 |
Testability/fault isolation by adaptive strategy
|
|
|
1984
|
24 |
1 |
p. 174-
1 p.
|
artikel
|
| 219 |
Testing and laser adjustment for production: 1983
|
|
|
1984
|
24 |
1 |
p. 188-
1 p.
|
artikel
|
| 220 |
Testing logic arrays
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 221 |
The application of a life cycle cost model to modular electronic systems
|
|
|
1984
|
24 |
1 |
p. 172-173
2 p.
|
artikel
|
| 222 |
The base current recombining at the oxidized silicon surface
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 223 |
The changing face of engineering
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 224 |
The development of device lithography
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 225 |
The future of custom
|
|
|
1984
|
24 |
1 |
p. 177-
1 p.
|
artikel
|
| 226 |
The hypergeometric distribution model for predicting the reliability of softwares
|
Zhi, Huang Xi
|
|
1984
|
24 |
1 |
p. 11-20
10 p.
|
artikel
|
| 227 |
The influence of an external electric field on the silicon homoepitaxy process
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 228 |
The influence of conductor particle size distribution on the blending curve of epoxy-based thick film resistors
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 229 |
The influence of contaminants during the firing of inks
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 230 |
The intermittent multi-layer board—a case history
|
|
|
1984
|
24 |
1 |
p. 170-
1 p.
|
artikel
|
| 231 |
The nature of temperature dependence of energy gaps in layer semiconductors
|
|
|
1984
|
24 |
1 |
p. 183-
1 p.
|
artikel
|
| 232 |
The reliability of weather forecasting
|
Bergmann, P.J.
|
|
1984
|
24 |
1 |
p. 73-76
4 p.
|
artikel
|
| 233 |
Thermal imager's scanning technique boosts reliability
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 234 |
The role of the manufacturing defects analyser
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 235 |
Thick film fail-safe resistors
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 236 |
4400715 Thin film semiconductor device and method for manufacture
|
Barbee, Steven
|
|
1984
|
24 |
1 |
p. 195-196
2 p.
|
artikel
|
| 237 |
Tomorrow's semiconductor memories
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 238 |
Towards a more thorough paste specification
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 239 |
Transparent conductive films of tin oxide-preparation and properties
|
|
|
1984
|
24 |
1 |
p. 186-
1 p.
|
artikel
|
| 240 |
Trends in semi-custom integrated circuits—an overiew
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 241 |
Tungsten titanium diffusion barrier metallization
|
|
|
1984
|
24 |
1 |
p. 181-
1 p.
|
artikel
|
| 242 |
Two level allocation method of system reliability
|
|
|
1984
|
24 |
1 |
p. 171-
1 p.
|
artikel
|
| 243 |
Using the decomposition-tree of a network in reliability computation
|
|
|
1984
|
24 |
1 |
p. 175-
1 p.
|
artikel
|
| 244 |
Vapour phase growth of some II–VI compounds
|
|
|
1984
|
24 |
1 |
p. 184-
1 p.
|
artikel
|
| 245 |
Verification of the model for phosphorus diffusion from oxide sources into silicon
|
|
|
1984
|
24 |
1 |
p. 185-
1 p.
|
artikel
|
| 246 |
Versatile packaging concept using thick film hybrids for analog and digital circuits
|
|
|
1984
|
24 |
1 |
p. 187-
1 p.
|
artikel
|
| 247 |
Video designers move toward ICs
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 248 |
VLSI polysilicon etching: a comparison of different techniques
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 249 |
VLSI test system grows in pin count and functionality
|
|
|
1984
|
24 |
1 |
p. 182-
1 p.
|
artikel
|
| 250 |
Warranty definition for bulk availability
|
|
|
1984
|
24 |
1 |
p. 169-
1 p.
|
artikel
|
| 251 |
Wavesoldering discrete chip components
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 252 |
What makes CMOS run?
|
|
|
1984
|
24 |
1 |
p. 178-
1 p.
|
artikel
|
| 253 |
XeF2 and F-atom reactions with Si: their significance for plasma etching
|
|
|
1984
|
24 |
1 |
p. 184-185
2 p.
|
artikel
|
| 254 |
1X mask and reticle technology
|
|
|
1984
|
24 |
1 |
p. 180-
1 p.
|
artikel
|
| 255 |
X-ray lithography for VLSI
|
|
|
1984
|
24 |
1 |
p. 180-181
2 p.
|
artikel
|
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