nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AC and DC conductivity in amorphous silicon-hydrogen films
|
|
|
1984 |
24 |
1 |
p. 187- 1 p. |
artikel |
2 |
Advances in silicon technology for the semiconductor industry, Part I
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
3 |
A fault-tolerant system architecture for Navy applications
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
4 |
A large scale hybrid thermal print head
|
|
|
1984 |
24 |
1 |
p. 186- 1 p. |
artikel |
5 |
ALU, multiplier chips zip through IEEE floating-point operations
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
6 |
A moments compiler for computing Bayes intervals for complex systems
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
7 |
Analysis of two-unit redundant system under partial failure and two types of repairs
|
Goel, L.R. |
|
1984 |
24 |
1 |
p. 21-24 4 p. |
artikel |
8 |
A new computer-aided simulation model for polycrystalline silicon film resistors
|
|
|
1984 |
24 |
1 |
p. 185-186 2 p. |
artikel |
9 |
Application of automatic alignment to MOS processing in projection printing
|
|
|
1984 |
24 |
1 |
p. 179-180 2 p. |
artikel |
10 |
Applications of focused ion beams to microlithography
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
11 |
A practical approach to the testing of a high-volume custom linear IC
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
12 |
A review of RAM testing methodologies
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
13 |
Ashing process for dry photolithography
|
Singh, Awatar |
|
1984 |
24 |
1 |
p. 165- 1 p. |
artikel |
14 |
A software evaluation: results and recommendations
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
15 |
Aspects of accelerated ageing tests used on connectors and terminals for the U.K. external telephone network
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
16 |
Assessment of micropackaged integrated circuits in high reliability applications
|
|
|
1984 |
24 |
1 |
p. 170- 1 p. |
artikel |
17 |
Assuring VLSI quality and reliability with test patterns
|
|
|
1984 |
24 |
1 |
p. 170-171 2 p. |
artikel |
18 |
A study of some factors influencing the wear resistance of lubricated gold contacts
|
|
|
1984 |
24 |
1 |
p. 170- 1 p. |
artikel |
19 |
A suspended boat loader based on the cantilever principle
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
20 |
A systems approach to 1-μm NMOS
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
21 |
A two-level sparing approach for plug-in modules
|
|
|
1984 |
24 |
1 |
p. 170- 1 p. |
artikel |
22 |
A two-unit parallel redundant system with three modes and bivariate exponential lifetimes
|
Goel, L.R. |
|
1984 |
24 |
1 |
p. 25-28 4 p. |
artikel |
23 |
Automated thermal reliability analysis of hybrids
|
|
|
1984 |
24 |
1 |
p. 185- 1 p. |
artikel |
24 |
Availability considerations for satellite links
|
|
|
1984 |
24 |
1 |
p. 173-174 2 p. |
artikel |
25 |
Basic chemistry and mechanisms of plasma etching
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
26 |
Birth-death and bug counting
|
|
|
1984 |
24 |
1 |
p. 176- 1 p. |
artikel |
27 |
BIT analysis and design reliability
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
28 |
32-bit processor chip integrates major system functions
|
|
|
1984 |
24 |
1 |
p. 181- 1 p. |
artikel |
29 |
Bold Koreans push into leading-edge ICs
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
30 |
CAD system coordinates complete semicustom chip design
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
31 |
CAD systems: meeting the challenge of VLSI design
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
32 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984 |
24 |
1 |
p. 1-3 3 p. |
artikel |
33 |
Can electron beam mask making keep pace with advancing technology?
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
34 |
Carrier recombination and lifetime in highly doped silicon
|
|
|
1984 |
24 |
1 |
p. 183- 1 p. |
artikel |
35 |
Centrifugal on-center, flood-spray developing of positive photoresist
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
36 |
Charge loss in metal-nitride-oxide-semiconductor (MNOS) devices at high temperatures
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
37 |
Chemical impurities and structural imperfections in semiconductor silicon. Part II
|
|
|
1984 |
24 |
1 |
p. 182-183 2 p. |
artikel |
38 |
Chip architecture: a revolution brewing
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
39 |
Clean room garments: where from here?
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
40 |
Comparative study of thick film dielectrics
|
|
|
1984 |
24 |
1 |
p. 186- 1 p. |
artikel |
41 |
Comparison of memory chip organizations vs reliability in virtual memories
|
|
|
1984 |
24 |
1 |
p. 174-175 2 p. |
artikel |
42 |
Comparison of two unit cold standby reliability models with three types of repair facilities
|
Murari, K. |
|
1984 |
24 |
1 |
p. 35-49 15 p. |
artikel |
43 |
Computer aided design of hybrid circuits
|
|
|
1984 |
24 |
1 |
p. 186-187 2 p. |
artikel |
44 |
Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution
|
Jordan, A.S. |
|
1984 |
24 |
1 |
p. 101-124 24 p. |
artikel |
45 |
Correspondence of types I & II censored-sample estimators
|
|
|
1984 |
24 |
1 |
p. 176- 1 p. |
artikel |
46 |
Cost analysis of a 3-state 2-unit reparable system
|
Gupta, P.P. |
|
1984 |
24 |
1 |
p. 55-59 5 p. |
artikel |
47 |
Cost function analysis of a 3-state reparable system
|
Gupta, P.P. |
|
1984 |
24 |
1 |
p. 51-53 3 p. |
artikel |
48 |
4401904 Delay circuit used in semiconductor memory device
|
White, LionelS |
|
1984 |
24 |
1 |
p. 195- 1 p. |
artikel |
49 |
Design of a 108 pin VLSI package with low thermal resistance
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
50 |
Design of plasma deposition reactors
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
51 |
Determination of service effectiveness to individual terminals in multiterminal capacity-limited systems
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
52 |
Development of a multiple intermittent fault testing strategy
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
53 |
Developments in products, technology and design tools
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
54 |
Device, circuit and technology scaling to micron and submicron dimensions
|
|
|
1984 |
24 |
1 |
p. 181- 1 p. |
artikel |
55 |
4396933 Dielectrically isolated semiconductor devices
|
Magdo, IngridE |
|
1984 |
24 |
1 |
p. 196- 1 p. |
artikel |
56 |
Digital simulation of magnetic Czochralski flow under various laboratory conditions for silicon growth
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
57 |
Dynamic element matching puts trimless converters on chip
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
58 |
4409672 Dynamic semiconductor memory device
|
Takemae, Yoshihir |
|
1984 |
24 |
1 |
p. 191- 1 p. |
artikel |
59 |
Editorial Board
|
|
|
1984 |
24 |
1 |
p. IFC- 1 p. |
artikel |
60 |
Effect of surface reconstruction on the adsorption of Ge on clean Si (111)
|
|
|
1984 |
24 |
1 |
p. 183- 1 p. |
artikel |
61 |
Electrical characterization of Al-SiO2-Si (N-type ) tunnel structures, influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
62 |
Electrical measurements on ion-implanted LPCVD polycrystalline silicon films
|
|
|
1984 |
24 |
1 |
p. 187- 1 p. |
artikel |
63 |
Electrical transport in thick film (Cermet) resistors
|
|
|
1984 |
24 |
1 |
p. 186- 1 p. |
artikel |
64 |
Electron beam induced conductivity in “PET” and “FEP”
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
65 |
Electron-beam systems for precision micron and submicron lithography
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
66 |
Electron-flood techniques to neutralize beam charging during ion implantation
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
67 |
Energy levels of interstitial manganese in silicon
|
|
|
1984 |
24 |
1 |
p. 184- 1 p. |
artikel |
68 |
Enhanced testing of VLSI devices
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
69 |
Environmental influence on field MTTR
|
|
|
1984 |
24 |
1 |
p. 171-172 2 p. |
artikel |
70 |
Estimating orthogonality deviation of a step-and-repeat lithographic system
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
71 |
Estimators for the 2-parameter Weibull distribution with progressively censored samples
|
|
|
1984 |
24 |
1 |
p. 175- 1 p. |
artikel |
72 |
Evolution of quality/reliability due to litigation
|
|
|
1984 |
24 |
1 |
p. 169- 1 p. |
artikel |
73 |
Failure rate calculations using a programmable calculator
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
74 |
Failures induced by electromigration in ECL 100k devices
|
Canali, C. |
|
1984 |
24 |
1 |
p. 77-100 24 p. |
artikel |
75 |
Finding faults—a dilemma for statisticians
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
76 |
GaAs microwave devices and circuits with submicron electron-beam defined features
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
77 |
Generalised availability measures for a two-unit intermittently used repairable system
|
Kapur, P.K. |
|
1984 |
24 |
1 |
p. 29-34 6 p. |
artikel |
78 |
Graphical techniques for fault detection analysis
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
79 |
Growth of dislocation-free bulk silicon crystals
|
|
|
1984 |
24 |
1 |
p. 184- 1 p. |
artikel |
80 |
Guidelines for finer lines in thick film circuitry
|
|
|
1984 |
24 |
1 |
p. 185- 1 p. |
artikel |
81 |
4409606 High breakdown voltage semiconductor device
|
Wagenaar, Kornelis |
|
1984 |
24 |
1 |
p. 191- 1 p. |
artikel |
82 |
Highly integrated 16-bit microprocessor ups performance, aids design of work station. Part 2
|
|
|
1984 |
24 |
1 |
p. 181- 1 p. |
artikel |
83 |
High-pressure oxidation in n-channel MOS technology
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
84 |
High rate aluminium etching in a batch loaded reactive ion etcher
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
85 |
High speed CMOS gate arrays
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
86 |
High-speed microelectronics for military applications
|
|
|
1984 |
24 |
1 |
p. 182- 1 p. |
artikel |
87 |
Hybrids for automotive applications
|
|
|
1984 |
24 |
1 |
p. 185- 1 p. |
artikel |
88 |
Hybrids—materials and processes for thick film. Hybrid applications (Part 1)
|
|
|
1984 |
24 |
1 |
p. 185- 1 p. |
artikel |
89 |
I challenge your beliefs about reliability. Part IV: processes and controls
|
|
|
1984 |
24 |
1 |
p. 169- 1 p. |
artikel |
90 |
I2L speed improvement by an ion implantation modification to a standard bipolar process
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
91 |
Impact of thermal cycling on computer reliability
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
92 |
Implementation and measurable output of software quality assurance
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
93 |
Implications of board testing at speed
|
|
|
1984 |
24 |
1 |
p. 176- 1 p. |
artikel |
94 |
Important considerations in selecting anisotropic plasma etching equipment
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
95 |
4412142 Integrated circuit incorporating low voltage and high voltage semiconductor devices
|
Ragonese, Louis |
|
1984 |
24 |
1 |
p. 190- 1 p. |
artikel |
96 |
Integrated circuit yield statistics
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
97 |
Integrated optical devices using amorphous As2S3 thin film
|
|
|
1984 |
24 |
1 |
p. 186- 1 p. |
artikel |
98 |
Integrated software tackles VLSI design
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
99 |
Ion beam etching in an evaporator
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
100 |
Ion-implantation associated defect production in silicon
|
|
|
1984 |
24 |
1 |
p. 187- 1 p. |
artikel |
101 |
Isothermal liquid phase epitaxy
|
|
|
1984 |
24 |
1 |
p. 183- 1 p. |
artikel |
102 |
l/f noise as a reliability estimation for solar cells
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
103 |
Linewidth measurement: approaching the submicron dimension
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
104 |
Lithography steps ahead to meet the VLSI challenge
|
|
|
1984 |
24 |
1 |
p. 178- 1 p. |
artikel |
105 |
Machine intelligence and related topics
|
G.W.A.D., |
|
1984 |
24 |
1 |
p. 167- 1 p. |
artikel |
106 |
4395981 Magneto-semiconductor ignition system
|
Podrapsky, Jiri |
|
1984 |
24 |
1 |
p. 196-197 2 p. |
artikel |
107 |
Magnetron deposition of conductor metallization
|
|
|
1984 |
24 |
1 |
p. 186- 1 p. |
artikel |
108 |
Maintenance centered reliability
|
|
|
1984 |
24 |
1 |
p. 173- 1 p. |
artikel |
109 |
Memory testing: as dynamic as ever
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
110 |
4404662 Method and circuit for accessing an integrated semiconductor memory
|
Masenas, Charles |
|
1984 |
24 |
1 |
p. 192-193 2 p. |
artikel |
111 |
4392893 Method for controlling characteristics of a semiconductor integrated by circuit X-ray bombardment
|
Du, NguyenT |
|
1984 |
24 |
1 |
p. 199- 1 p. |
artikel |
112 |
4403241 Method for etching III–V semiconductors and devices made by this method
|
Butherus, AlexanderD |
|
1984 |
24 |
1 |
p. 194- 1 p. |
artikel |
113 |
4391650 Method for fabricating improved complementary metal oxide semiconductor devices
|
Pfeifer, Robert |
|
1984 |
24 |
1 |
p. 199-200 2 p. |
artikel |
114 |
4411981 Method for forming a pattern in a thin-film transistor having tellurium semiconductor layer
|
Minezaki, Shigehiro |
|
1984 |
24 |
1 |
p. 190- 1 p. |
artikel |
115 |
4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity
|
Nagakubo, Yoshihide |
|
1984 |
24 |
1 |
p. 197-198 2 p. |
artikel |
116 |
4408387 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
|
Kiriseko, Tadashi |
|
1984 |
24 |
1 |
p. 191- 1 p. |
artikel |
117 |
4409724 Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
|
Tasch, Aloysiousf |
|
1984 |
24 |
1 |
p. 190- 1 p. |
artikel |
118 |
4408386 Method of manufacturing semiconductor integrated circuit devices
|
Takayashiki, Tetsuya |
|
1984 |
24 |
1 |
p. 192- 1 p. |
artikel |
119 |
4394181 Methods of manufacturing a semiconductor device having a channel region spaced inside channel stoppers
|
Nicholas, KeithH |
|
1984 |
24 |
1 |
p. 198- 1 p. |
artikel |
120 |
Microelectronic system reliability prediction
|
|
|
1984 |
24 |
1 |
p. 176- 1 p. |
artikel |
121 |
Microprocessor chip integrates a host of peripheral functions to simplify systems
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
122 |
Microscopic investigations of semiconductor interfaces
|
|
|
1984 |
24 |
1 |
p. 183- 1 p. |
artikel |
123 |
Mid-UV lithography with positive resist—a multifactorial tool and process evaluation
|
|
|
1984 |
24 |
1 |
p. 180- 1 p. |
artikel |
124 |
Minimizing the average cost of testing coherent systems: complexity and approximate algorithms
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
125 |
Minority carrier recombination in heavily-doped silicon
|
|
|
1984 |
24 |
1 |
p. 183-184 2 p. |
artikel |
126 |
Mix-and-match alignment: cost effective for VLSI
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
127 |
Models for accelerated life-testing
|
|
|
1984 |
24 |
1 |
p. 177- 1 p. |
artikel |
128 |
Moisture control in photolithography areas
|
|
|
1984 |
24 |
1 |
p. 181- 1 p. |
artikel |
129 |
4393478 Monolithically integrated semiconductor memory with dummy and charge equalization cells
|
Kantz, Dieter |
|
1984 |
24 |
1 |
p. 198-199 2 p. |
artikel |
130 |
MOS and bipolar VLSI technologies using electron-beam lithography
|
|
|
1984 |
24 |
1 |
p. 187- 1 p. |
artikel |
131 |
Mossbauer study of iron hydride formation by low temperature ion implantation
|
|
|
1984 |
24 |
1 |
p. 188- 1 p. |
artikel |
132 |
Moving probes replace bed of nails
|
|
|
1984 |
24 |
1 |
p. 181- 1 p. |
artikel |
133 |
Multilayer resist systems and processing
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
134 |
Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire
|
|
|
1984 |
24 |
1 |
p. 187- 1 p. |
artikel |
135 |
New analytical models for logistics support cost and life cycle cost vs reliability function
|
Govil, K.K. |
|
1984 |
24 |
1 |
p. 61-63 3 p. |
artikel |
136 |
4395724 Nonvolatile semiconductor memory device
|
Iwahashi, Hirosh |
|
1984 |
24 |
1 |
p. 197- 1 p. |
artikel |
137 |
Nuclear-power-plant malfunction analysis
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
138 |
Numerical evaluation of instantaneous availability
|
|
|
1984 |
24 |
1 |
p. 175- 1 p. |
artikel |
139 |
Onshore vs offshore final test
|
|
|
1984 |
24 |
1 |
p. 175- 1 p. |
artikel |
140 |
On some reliability implications of electronic circuit design
|
|
|
1984 |
24 |
1 |
p. 175-176 2 p. |
artikel |
141 |
On the survivor function of a mixture in life testing
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
142 |
Optimal number of failures before replacement time
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
143 |
Optimal reliability design by a transformation technique
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
144 |
Optimal sequencing of items in a consecutive-2-out-of-n system
|
|
|
1984 |
24 |
1 |
p. 174- 1 p. |
artikel |
145 |
Optimum simple step-stress plans for accelerated life testing
|
|
|
1984 |
24 |
1 |
p. 176-177 2 p. |
artikel |
146 |
Pellicle mask protection for 1: 1 projection lithography
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
147 |
Percentiles of pooled estimates of Weibull parameters
|
|
|
1984 |
24 |
1 |
p. 171- 1 p. |
artikel |
148 |
Performance and reliability analysis of a microcomputer pool
|
|
|
1984 |
24 |
1 |
p. 172- 1 p. |
artikel |
149 |
Photoresist technology update
|
|
|
1984 |
24 |
1 |
p. 179- 1 p. |
artikel |
150 |
Photovoltaic measurement of bandgap narrowing in moderately doped silicon
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1984 |
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151 |
Pitfalls of software quality assurance management
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1984 |
24 |
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p. 171- 1 p. |
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152 |
4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
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Herman, Thomas |
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1984 |
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p. 189- 1 p. |
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153 |
Planning of aging experiments for semiconductor devices by means of the assurance test matrix
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Jordan, A.S. |
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1984 |
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p. 125-146 22 p. |
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154 |
Plasma deposition of inorganic films
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1984 |
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p. 185- 1 p. |
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155 |
Plasma etcher capital equipment design trends
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1984 |
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p. 181- 1 p. |
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156 |
Plasma processing—an art or a science?
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1984 |
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p. 179- 1 p. |
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157 |
Point defects in II–VI compounds
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1984 |
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158 |
Positive-resist processing considerations for VLSI lithography
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1984 |
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p. 179- 1 p. |
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159 |
Practical application of Bayes' formulas
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1984 |
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p. 173- 1 p. |
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160 |
Precise MMIC parameters yielded by 18-GHz wafer probe
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1984 |
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p. 178- 1 p. |
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161 |
Predicting burn-in performance for a new design
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1984 |
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p. 175- 1 p. |
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162 |
Preparation of large-area, electron-transparent silicon specimens by anisotropic etching
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1984 |
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p. 184- 1 p. |
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163 |
Prevention and removal of programming defects
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1984 |
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p. 177- 1 p. |
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164 |
Price war shrinks home-computer profits
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1984 |
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p. 177- 1 p. |
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165 |
Properties of low pressure CVD tungsten silicide as related to IC process requirements
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1984 |
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p. 185- 1 p. |
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166 |
Publications, notices, calls for papers, etc.
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1984 |
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p. 5- 1 p. |
artikel |
167 |
Qualification of connectors manufactured with diffused gold R156 inlay contacts
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1984 |
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p. 169-170 2 p. |
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168 |
Quality assurance for computer programs
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1984 |
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p. 174- 1 p. |
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169 |
RAM analysis requirements for avionic systems
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1984 |
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170 |
Reactive ion etching of polysilicon and tantalum silicide
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1984 |
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p. 187-188 2 p. |
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171 |
Recent advances in hetero-epitaxial silicon-on-insulator technology. Part I
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1984 |
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p. 178- 1 p. |
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172 |
Recent advances in hetero-epitaxial silicon-on-insulator technology, Part II
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1984 |
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p. 181- 1 p. |
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173 |
Reliability and maintainability of a multicomponent series-parallel system with simultaneous failure and repair priorities
|
Kodama, Masanori |
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1984 |
24 |
1 |
p. 147-164 18 p. |
artikel |
174 |
Reliability and operational effectiveness
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1984 |
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p. 9- 1 p. |
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175 |
Reliability is enhanced by TAAF testing
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1984 |
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1 |
p. 176- 1 p. |
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176 |
Reliability of a signal processing system
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1984 |
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1 |
p. 172- 1 p. |
artikel |
177 |
Reliability of medium-voltage vacuum power circuit-breakers
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1984 |
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1 |
p. 170- 1 p. |
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178 |
Reliability of shuttle mission control center software
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1984 |
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1 |
p. 173- 1 p. |
artikel |
179 |
Reliability prediction for microelectronic systems
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1984 |
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p. 174- 1 p. |
artikel |
180 |
Repair/reliability guarantee programs can work
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1984 |
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p. 173- 1 p. |
artikel |
181 |
Resists for fine-line lithography
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1984 |
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p. 180- 1 p. |
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182 |
Ridge detection of culprit variables
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1984 |
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p. 173- 1 p. |
artikel |
183 |
Scanned electron-beam probe shows surface acoustic waves in action
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1984 |
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p. 187- 1 p. |
artikel |
184 |
Second harmonic generation in centro-symmetric semiconductors
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1984 |
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1 |
p. 185- 1 p. |
artikel |
185 |
Selective etching of silicon dioxide films
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1984 |
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1 |
p. 180- 1 p. |
artikel |
186 |
4412237 Semiconductor device
|
Matsumura, Nobutake |
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1984 |
24 |
1 |
p. 189- 1 p. |
artikel |
187 |
4403396 Semiconductor device design and process
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Stein, RichardJ |
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1984 |
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1 |
p. 194- 1 p. |
artikel |
188 |
4404048 Semiconductor device manufacture
|
Vogelzang, DirkA |
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1984 |
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1 |
p. 193- 1 p. |
artikel |
189 |
4395726 Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
|
Maeguchi, Kenji |
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1984 |
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1 |
p. 197- 1 p. |
artikel |
190 |
4404654 Semiconductor device system
|
Kamuro, Setsufumi |
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1984 |
24 |
1 |
p. 193- 1 p. |
artikel |
191 |
4402001 Semiconductor element capable of withstanding high voltage
|
Momma, Naohiro |
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1984 |
24 |
1 |
p. 195- 1 p. |
artikel |
192 |
4394625 Semiconductor integrated circuit device
|
Sakai, Koich |
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1984 |
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1 |
p. 198- 1 p. |
artikel |
193 |
4408385 Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
|
Mohan, RaoGR |
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1984 |
24 |
1 |
p. 192- 1 p. |
artikel |
194 |
4409674 Semiconductor memory
|
Takahashi, Yukio |
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1984 |
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1 |
p. 191- 1 p. |
artikel |
195 |
4408304 Semiconductor memory
|
Nishizawa, Jun-ichi |
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1984 |
24 |
1 |
p. 192- 1 p. |
artikel |
196 |
4404657 Semiconductor memory circuit
|
Furuyama, Tohr |
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1984 |
24 |
1 |
p. 193- 1 p. |
artikel |
197 |
4402066 Semiconductor memory circuit
|
Itoh, Hideo |
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1984 |
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1 |
p. 195- 1 p. |
artikel |
198 |
4398267 Semiconductor memory device
|
Furuyama, Tohru |
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1984 |
24 |
1 |
p. 196- 1 p. |
artikel |
199 |
4403307 Semiconductor memory device
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Maeda, Koh-ichi |
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1984 |
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1 |
p. 194- 1 p. |
artikel |
200 |
4403306 Semiconductor memory operable as static RAM or earom
|
Tokushige, Kaoru |
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1984 |
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p. 194- 1 p. |
artikel |
201 |
4392069 Semiconductor switch
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Pfeifer, Robert |
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1984 |
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p. 199- 1 p. |
artikel |
202 |
Semi-custom I.C.'s—reliable and productive
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1984 |
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p. 170- 1 p. |
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203 |
Sequential method for comparing two constant failure-rates
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1984 |
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p. 176- 1 p. |
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204 |
Significant subtleties of stress screening
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1984 |
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p. 172- 1 p. |
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205 |
Silicon and hybrid micro-electronic sensors
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1984 |
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p. 178- 1 p. |
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206 |
Silicon epitaxial wafer profiling using the mercury-silicon Schottky diode differential capacitance method
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1984 |
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p. 178- 1 p. |
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207 |
Silicon oxidation: the status and new directions
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1984 |
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p. 183- 1 p. |
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208 |
Sockets for integrated circuits
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1984 |
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p. 180- 1 p. |
artikel |
209 |
Software—a critical dimension in testing LSI/VLSI chips
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1984 |
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p. 182- 1 p. |
artikel |
210 |
Sources of semiconductor wafer contamination
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1984 |
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p. 179- 1 p. |
artikel |
211 |
Sparing for repairable, redundant systems
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1984 |
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p. 174- 1 p. |
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212 |
Standard cells hatch semicustom micros
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1984 |
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p. 182- 1 p. |
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213 |
Superclean chemicals: a status report
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1984 |
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p. 179- 1 p. |
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214 |
Switching to bipolar technology for the coming 100,000-gate arrays
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1984 |
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p. 181- 1 p. |
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215 |
Tactical air war: A SIMSCRIPT model
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Sherif, Y.S. |
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1984 |
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p. 65-71 7 p. |
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216 |
Technology modeling for VLSI devices
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1984 |
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1 |
p. 181- 1 p. |
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217 |
Temperature gradient zone melting
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1984 |
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p. 184- 1 p. |
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218 |
Testability/fault isolation by adaptive strategy
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1984 |
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p. 174- 1 p. |
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219 |
Testing and laser adjustment for production: 1983
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1984 |
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p. 188- 1 p. |
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220 |
Testing logic arrays
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1984 |
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1 |
p. 182- 1 p. |
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221 |
The application of a life cycle cost model to modular electronic systems
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1984 |
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p. 172-173 2 p. |
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222 |
The base current recombining at the oxidized silicon surface
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1984 |
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p. 183- 1 p. |
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223 |
The changing face of engineering
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1984 |
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p. 178- 1 p. |
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224 |
The development of device lithography
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1984 |
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p. 180- 1 p. |
artikel |
225 |
The future of custom
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1984 |
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p. 177- 1 p. |
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226 |
The hypergeometric distribution model for predicting the reliability of softwares
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Zhi, Huang Xi |
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1984 |
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p. 11-20 10 p. |
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227 |
The influence of an external electric field on the silicon homoepitaxy process
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1984 |
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p. 185- 1 p. |
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228 |
The influence of conductor particle size distribution on the blending curve of epoxy-based thick film resistors
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1984 |
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p. 186- 1 p. |
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229 |
The influence of contaminants during the firing of inks
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1984 |
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p. 186- 1 p. |
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230 |
The intermittent multi-layer board—a case history
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1984 |
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p. 170- 1 p. |
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231 |
The nature of temperature dependence of energy gaps in layer semiconductors
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1984 |
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p. 183- 1 p. |
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232 |
The reliability of weather forecasting
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Bergmann, P.J. |
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1984 |
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p. 73-76 4 p. |
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233 |
Thermal imager's scanning technique boosts reliability
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1984 |
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p. 171- 1 p. |
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234 |
The role of the manufacturing defects analyser
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1984 |
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p. 171- 1 p. |
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235 |
Thick film fail-safe resistors
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1984 |
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p. 186- 1 p. |
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236 |
4400715 Thin film semiconductor device and method for manufacture
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Barbee, Steven |
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1984 |
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p. 195-196 2 p. |
artikel |
237 |
Tomorrow's semiconductor memories
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1984 |
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p. 182- 1 p. |
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238 |
Towards a more thorough paste specification
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1984 |
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p. 187- 1 p. |
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239 |
Transparent conductive films of tin oxide-preparation and properties
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1984 |
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p. 186- 1 p. |
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240 |
Trends in semi-custom integrated circuits—an overiew
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1984 |
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1 |
p. 178- 1 p. |
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241 |
Tungsten titanium diffusion barrier metallization
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1984 |
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p. 181- 1 p. |
artikel |
242 |
Two level allocation method of system reliability
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1984 |
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p. 171- 1 p. |
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243 |
Using the decomposition-tree of a network in reliability computation
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1984 |
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p. 175- 1 p. |
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244 |
Vapour phase growth of some II–VI compounds
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1984 |
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p. 184- 1 p. |
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245 |
Verification of the model for phosphorus diffusion from oxide sources into silicon
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1984 |
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p. 185- 1 p. |
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246 |
Versatile packaging concept using thick film hybrids for analog and digital circuits
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1984 |
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p. 187- 1 p. |
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247 |
Video designers move toward ICs
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1984 |
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p. 182- 1 p. |
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248 |
VLSI polysilicon etching: a comparison of different techniques
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1984 |
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p. 178- 1 p. |
artikel |
249 |
VLSI test system grows in pin count and functionality
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1984 |
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p. 182- 1 p. |
artikel |
250 |
Warranty definition for bulk availability
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1984 |
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p. 169- 1 p. |
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251 |
Wavesoldering discrete chip components
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1984 |
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p. 180- 1 p. |
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252 |
What makes CMOS run?
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1984 |
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p. 178- 1 p. |
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253 |
XeF2 and F-atom reactions with Si: their significance for plasma etching
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1984 |
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p. 184-185 2 p. |
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254 |
1X mask and reticle technology
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1984 |
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p. 180- 1 p. |
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255 |
X-ray lithography for VLSI
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1984 |
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p. 180-181 2 p. |
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