| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 2400-bit/s microprocessor-based modem
|
|
|
1981
|
21 |
5 |
p. 758-759
2 p.
|
artikel
|
| 2 |
A computer-aided design system for hybrid circuits
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 3 |
A computer-aided method for allocation of discrete tolerances in electric networks
|
Pillai, K.R.
|
|
1981
|
21 |
5 |
p. 711-715
5 p.
|
artikel
|
| 4 |
A continuous time model of multiple intermittent faults in digital systems
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 5 |
A cut set method for reliability evaluation of systems having s-dependent components
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 6 |
Admissible, minimax and equivariant estimators of life distributions from Type II censored samples
|
|
|
1981
|
21 |
5 |
p. 753-754
2 p.
|
artikel
|
| 7 |
A general software reliability model for performance prediction
|
Shanthikumar, J.G.
|
|
1981
|
21 |
5 |
p. 671-682
12 p.
|
artikel
|
| 8 |
A geometric programming approach for optimum tolerance assignment in circuits
|
Pillai, K.R.
|
|
1981
|
21 |
5 |
p. 731-735
5 p.
|
artikel
|
| 9 |
A low-leakage-current CdSe thin film transistor
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 10 |
A model for the breakdown characteristics of p-channel MOS transistor protection devices
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 11 |
A multistate system with general repair time distribution
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 12 |
Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 13 |
Analytical techniques in product safety
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 14 |
Analyzer fills debugging gap
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 15 |
Analyzer tests bare and loaded boards
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 16 |
A new EPR center due to dislocations in phosphorous doped silicon
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 17 |
A new production technique: ion milling. Part II—Applications
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 18 |
A new technique for depot and sub-depot spares
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 19 |
Anisotropic etching in chlorine-containing plasmas
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 20 |
A note on a lifetime model
|
Viertl, Reinhard
|
|
1981
|
21 |
5 |
p. 745-748
4 p.
|
artikel
|
| 21 |
A novel approach for higher yield in thick-film resistors
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 22 |
A physical interpretation of dispersive transport in disordered semiconductors
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 23 |
Applying signature analysis to existing processor-based products
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 24 |
Are U.S. C-MOS makers falling behind?
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 25 |
A review of flatness effects in microlithographic technology
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 26 |
A two non-identical three-state units redundant system with common-cause failures and one standby unit
|
Chung, Who Kee
|
|
1981
|
21 |
5 |
p. 707-709
3 p.
|
artikel
|
| 27 |
Automated semiconductor line speeds custom chip production
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 28 |
Automatic unit troubleshoots systems
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 29 |
Auto slump drags IC prices down
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 30 |
Base component of gain and delay time in base-implanted bipolar transistors
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 31 |
Base metal thick film conductors
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 32 |
Bayesian 1-sample prediction for the 2-parameter Weibull distribution
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 33 |
BS 9000 components and reliability quality factors: Suggested use of MIL-HDBK-217C factors based on a comparative product assurance analysis
|
Gissing, J.G.
|
|
1981
|
21 |
5 |
p. 683-697
15 p.
|
artikel
|
| 34 |
CAD station aims at VLSI design
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 35 |
Calculation of the self-induced field profile produced by steady-state distribution of signal carriers in charge-coupled device
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 36 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1981
|
21 |
5 |
p. 623-625
3 p.
|
artikel
|
| 37 |
Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 38 |
CHAS seeks title of global CAD system
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 39 |
Chip set bestows virtual memory on 16-bit minis
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 40 |
C-MOS a-d converter interfaces easily with many microprocessors
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 41 |
Confidence regions for distribution bounds
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 42 |
Contribution to range statistics of Boron implanted into Silicon at high energies
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 43 |
Control chip and driver program unlock magnetic-bubble potential
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 44 |
Control of the transistor base sheet resistance in constructing a monolithic analog integrated circuit with symmetric I–V characteristics
|
Srivastava, A.
|
|
1981
|
21 |
5 |
p. 743-744
2 p.
|
artikel
|
| 45 |
Copy Japanese, U.S. managers urged
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 46 |
DC conduction mechanisms in thin polyimide films
|
Nevin, Joseph H.
|
|
1981
|
21 |
5 |
p. 699-705
7 p.
|
artikel
|
| 47 |
Detour ahead for IC equipment makers?
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 48 |
Diffusion theory of the steady-state flow of minority-carrier current through the Schottky barrier
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 49 |
3−d MOS FETs shrink static RAM cells and analog circuit blocks
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 50 |
Dose accuracy and doping uniformity of ion implantation equipment
|
|
|
1981
|
21 |
5 |
p. 765-766
2 p.
|
artikel
|
| 51 |
ECC tackles fiber optics, bonding, hybrid technology
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 52 |
Effect of device reliability on memory reliability
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 53 |
Electron beam finds memory faults, reconfigures chips
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 54 |
Electron beam lithography at the Rutherford Laboratory
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 55 |
Electronic characterization of double-gate thin film transistors
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 56 |
Electron light scattering from doped silicon
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 57 |
ESR studies of thermally oxidized silicon wafers
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 58 |
Estimation of reliability of cascade system
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 59 |
Evaluation of CMOS transistor related design rules
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 60 |
Evaluation of inhomogeneous resistive layers by a four point method
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 61 |
Experience in the shifting of responsibility for quality through introducing operator testing in industrial production
|
|
|
1981
|
21 |
5 |
p. 752-753
2 p.
|
artikel
|
| 62 |
Face-down TAB for hybrids
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 63 |
Fail-to-safe and fail-to-danger analysis of logic protective networks
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 64 |
Failure analysis techniques applied to expoxy encapsulated thick-film hybrids
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 65 |
Fast on-chip memory extends 16-bit family's reach
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 66 |
Field enhanced carrier generation in MOS-capacitors containing defects
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 67 |
First-passage time distribution of Brownian motion as a reliability model
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 68 |
Functional and in-circuit testing team up to tackle VLSI in the '80s
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 69 |
GaAs epitaxial growth for field effect transistors
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 70 |
GaAs semi-insulating materials: key parameters and characterization methods
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 71 |
Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology
|
|
|
1981
|
21 |
5 |
p. 764-765
2 p.
|
artikel
|
| 72 |
Hermetic chip carrier packaging
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 73 |
Hot-wall CVD Tungsten for VLSI
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 74 |
How Japan's chip makers line up to compete
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 75 |
Improved laser trimming geometry for thick film resistors—philosophy and example
|
|
|
1981
|
21 |
5 |
p. 766-
1 p.
|
artikel
|
| 76 |
Individual wafer metallization utilizing load-locked, closecoupled conical magnetron sputtering
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 77 |
Innovations which reduce costs and turn around time of integrated circuit production for small electronic engineering companies
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 78 |
Interface edge effect and its contribution to the frequency dispersion of metal-oxide-semiconductor admittance
|
|
|
1981
|
21 |
5 |
p. 759-760
2 p.
|
artikel
|
| 79 |
Introduction to reactive ion beam etching
|
|
|
1981
|
21 |
5 |
p. 766-
1 p.
|
artikel
|
| 80 |
Investigation of the possibility of the laser trimming of ceramic capacitors
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 81 |
Ion implantation for GaAs field effect transistors and integrated circuits
|
|
|
1981
|
21 |
5 |
p. 766-
1 p.
|
artikel
|
| 82 |
Is epitaxy right for MOS?
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 83 |
Light maintenance for a two-unit parallel redundant system with bivariate exponential lifetimes
|
Sugasaw, Yoshio
|
|
1981
|
21 |
5 |
p. 661-670
10 p.
|
artikel
|
| 84 |
Localized anodic thinning of GaAs structures
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 85 |
Logistics availability for sites with periodic or random resupply
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 86 |
Low frequency excess noise in SOS MOS FET's
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 87 |
Luminescence and lattice defects in Cu In S2
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 88 |
Makers organize for quality. Part 2
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 89 |
Maximizing a 64-K RAM's operating margins
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 90 |
Membrane touch switches: thick-film materials systems and processing options
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 91 |
Methods for probabilistic analysis of noncoherent fault trees
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 92 |
Methods of end point detection for plasma etching
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 93 |
Microprocessors and the M.D. A new breed of smart medical equipment can diagnose, monitor, analyze, and rehabilitate
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 94 |
Minimizing the parts count of multichannel data systems
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 95 |
Mobility of majority carriers in doped noncompensated silicon
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 96 |
Monolithically integrated circuits on gallium-arsenide basis, part 2
|
|
|
1981
|
21 |
5 |
p. 761-762
2 p.
|
artikel
|
| 97 |
Monolithic integrated filters—an overview
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 98 |
Monolithic microwave circuits
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 99 |
MOS threshold voltage monitoring
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 100 |
Multi-echelon multiple criteria spares allocation
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 101 |
Multifunction chip plays many parts in analog design
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 102 |
Multi-scan electron beam sintering of Al-Si OHMIC contacts
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 103 |
N-channel process increases speed and density of MNOS EEPROMs
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 104 |
Network problem-determination aids in microprocessor-based modems
|
|
|
1981
|
21 |
5 |
p. 754-755
2 p.
|
artikel
|
| 105 |
New approach to thick film resistor design
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 106 |
Ni-P as a new material for thick film technology
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 107 |
Ohmic contacts to Si-implanted InP
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 108 |
Oil prices fuel power IC work
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 109 |
On selective electroplating of gold in fabrication of MIC's
|
Ahmad, S.
|
|
1981
|
21 |
5 |
p. 727-730
4 p.
|
artikel
|
| 110 |
On the correlation of “hot” and “cold” electron-hole drop densities in uniaxially stressed silicon
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 111 |
Optimum ordering policies with random lead times
|
Kalpakam, S.
|
|
1981
|
21 |
5 |
p. 737-741
5 p.
|
artikel
|
| 112 |
Origins and minimization of defects in sputtered thin films
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 113 |
Over a million devices make up 32-bit CPU and support chips
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 114 |
Oxidized porous silicon isolates better than sapphire
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 115 |
Performance of digital integrated circuit technologies at very high temperatures
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 116 |
Personality modules' firmware controls VLSI circuit tester
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 117 |
Physical interpretation of the tantalum chip capacitor life-test results
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 118 |
Planar double-heterostructure GaAlAs LED's packaged for fiber optics
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 119 |
Plasma deposition of silicon dioxide and silicon nitride films
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 120 |
Plasma enhanced CVD in a novel LPCVD-type system
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 121 |
Plasma etching of aluminum
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 122 |
Plasma planarization
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 123 |
Poisson process and integrated circuit yield prediction
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 124 |
Post-characterization of GaAs field effect transistors and integrated circuits on test patterns
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 125 |
Prediction intervals for IFR distributions
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 126 |
Probabilistic evaluation of prime implicants and top-events for non-coherent systems
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 127 |
Progress in and technology of low-cost silver containing thick-film conductors
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|
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1981
|
21 |
5 |
p. 762-763
2 p.
|
artikel
|
| 128 |
Projection aligners stepping out
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 129 |
Properties of low anodization voltage thin-film capacitors based on α-Ta with nitrogen concentrations between 14 and 30 atomic percent
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 130 |
Publications, notices, calls for papers, etc.
|
|
|
1981
|
21 |
5 |
p. 627-635
9 p.
|
artikel
|
| 131 |
Quality, reliability top TI's list
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 132 |
Raman spectra of Si-implanted silicon on sapphire
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 133 |
Rapid determination of concentration and mobility profiles on thin GaAs layers
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 134 |
Recursive disjoint products, inclusion-exclusion and min-cut approximations
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 135 |
Reliability analysis of a fluidized-bed boiler for a coal-fueled power plant
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 136 |
Reliability determination of a r-successive-out-of-n:F system
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 137 |
Reliability problems in TTL-LS devices
|
Canali, C.
|
|
1981
|
21 |
5 |
p. 637-651
15 p.
|
artikel
|
| 138 |
Reverse CMOS processing
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 139 |
Review of factors affecting warpage of silicon wafers
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 140 |
Review of RIE induced radiation damage in silicon dioxide
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 141 |
Safety in chemical vapor deposition
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 142 |
Semiconductor device sensitive to magnetic field gradient
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 143 |
Semiconductor industry silicon: physical and thermodynamic properties
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 144 |
Silicides for interconnection technology
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 145 |
Silicon temperature sensors require little compensation
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 146 |
Simplified process controls based on acceptance by attributes
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 147 |
Software aids to microcomputer system reliability
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 148 |
Software rules give personal computer real word power
|
|
|
1981
|
21 |
5 |
p. 758-
1 p.
|
artikel
|
| 149 |
Soviet chips feature refined fabrication but mimic U.S. ICs
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 150 |
Squeaking solder powder
|
Anjard Sr, Ronald P.
|
|
1981
|
21 |
5 |
p. 749-750
2 p.
|
artikel
|
| 151 |
State-transition Monte Carlo for evaluating large, repairable systems
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 152 |
Static n-MOS RAM idles on trickle current
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 153 |
Statistical evaluation of learning factor in reliability studies
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 154 |
Stochastic behaviour of a two-unit redundant system with switchover time
|
Kumar, Ashok
|
|
1981
|
21 |
5 |
p. 717-725
9 p.
|
artikel
|
| 155 |
Strain sensitivity of thick-film resistors
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 156 |
Stress-sensitive properties of silicon-gate MOS devices
|
|
|
1981
|
21 |
5 |
p. 759-
1 p.
|
artikel
|
| 157 |
Strip architecture fits microcomputer into less silicon
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 158 |
Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 159 |
Superfast annealing
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 160 |
Surface enhanced and disorder induced Raman scattering from silver films
|
|
|
1981
|
21 |
5 |
p. 764-
1 p.
|
artikel
|
| 161 |
Survey of the international state of special LSI circuits for the PCM technique
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 162 |
System maintenance firms find a niche
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 163 |
System performs complete SLIC tests
|
|
|
1981
|
21 |
5 |
p. 754-
1 p.
|
artikel
|
| 164 |
Test strategies find faults in users' bubble memories
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 165 |
The diffusion of silicon in germanium
|
|
|
1981
|
21 |
5 |
p. 762-
1 p.
|
artikel
|
| 166 |
The drive for quality and reliability. Part I
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 167 |
The effect of boron redistribution on the threshold voltage of n-channel MOS transistors in CMOS structures
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 168 |
Thermal resistance: a reliability consideration
|
|
|
1981
|
21 |
5 |
p. 751-
1 p.
|
artikel
|
| 169 |
Thermal transients in electronic packages
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
| 170 |
The role of transport in very small devices for VLSI
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 171 |
Thick-film thermistor and its applications
|
|
|
1981
|
21 |
5 |
p. 763-
1 p.
|
artikel
|
| 172 |
Topological classification of defects in crystals
|
|
|
1981
|
21 |
5 |
p. 761-
1 p.
|
artikel
|
| 173 |
Transmission electron microscopy observations of lowtemperature ion implanted (100) silicon
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 174 |
Transport equations for the analysis of heavily doped semiconductor devices
|
|
|
1981
|
21 |
5 |
p. 760-761
2 p.
|
artikel
|
| 175 |
Trends in packaging and interconnection of integrated circuits
|
|
|
1981
|
21 |
5 |
p. 757-
1 p.
|
artikel
|
| 176 |
Trimming behaviour and post-trim characteristics of Ta2N resistors on silicon
|
|
|
1981
|
21 |
5 |
p. 765-
1 p.
|
artikel
|
| 177 |
Unified availability modeling: A redundant system with mechanical, electrical, software, human and common-cause failures
|
Dhillon, Balbir S.
|
|
1981
|
21 |
5 |
p. 653-659
7 p.
|
artikel
|
| 178 |
Uniform aluminum deposits on large non-planar and planar polyimide substrates by physical vapor deposition
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 179 |
2-unit standby system with fault analysis
|
|
|
1981
|
21 |
5 |
p. 753-
1 p.
|
artikel
|
| 180 |
Users push for quality. Part 3
|
|
|
1981
|
21 |
5 |
p. 752-
1 p.
|
artikel
|
| 181 |
Vibrational properties of crystalline and amorphous Ge 1−x Si x alloys
|
|
|
1981
|
21 |
5 |
p. 760-
1 p.
|
artikel
|
| 182 |
Wafer-etching systems line up
|
|
|
1981
|
21 |
5 |
p. 756-
1 p.
|
artikel
|
| 183 |
X-ray lithography breaks the submicrometer barrier
|
|
|
1981
|
21 |
5 |
p. 755-
1 p.
|
artikel
|
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