| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A case for large Auger recombination cross sections associated with deep centers in semiconductors
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 2 |
A charge-sheet model of the MOSFET
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 3 |
A common cause failure availability model
|
Dhillon, Balbir S.
|
|
1978
|
17 |
6 |
p. 583-584
2 p.
|
artikel
|
| 4 |
A contribution to the current gain temperature dependence of bipolar transistors
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 5 |
Adaption aux ensembles des condensateurs a dielectrique polypropylene metallise
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 6 |
Alternative methods for determining chip inductor parameters
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 7 |
Aluminum-SOS Schottky diodes
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 8 |
A mass production of thick-film car voltage regulators
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 9 |
A method for the splash-free evaporation of aluminium and other metals
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 10 |
A model to quantify reliability of human performance in man-machine systems
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 11 |
Analytical i.g.f.e.t. model including drift and diffusion currents
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 12 |
A new method for reliability optimization
|
Gopal, Krishna
|
|
1978
|
17 |
6 |
p. 605-608
4 p.
|
artikel
|
| 13 |
A new moisture sensor for in situ monitoring of sealed packages
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 14 |
A note on repair limit suspension policies for a 2-unit standby redundant system with two phase repairs
|
Kapur, P.K.
|
|
1978
|
17 |
6 |
p. 591-592
2 p.
|
artikel
|
| 15 |
Application of fluorinert liquid in the failure analysis of semiconductor integrated circuits
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 16 |
A practical method of optimizing system life cycle costs vs availability
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 17 |
A software development workshop for programmable microelectronics
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 18 |
A system reliability and maintainability simulation exercise
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 19 |
A thick film base metal resistor and compatible hybrid system
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 20 |
Availability of an (m, N) system with repair
|
Rao, K.V.
|
|
1978
|
17 |
6 |
p. 571-573
3 p.
|
artikel
|
| 21 |
Bulk lifetime determination of MOS structures by a voltage step response method
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 22 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1978
|
17 |
6 |
p. 543-546
4 p.
|
artikel
|
| 23 |
Cell layout boosts speed of low-power 64-K ROM
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 24 |
Ceramic-chip-capacitor attachment
|
|
|
1978
|
17 |
6 |
p. 559-560
2 p.
|
artikel
|
| 25 |
Changes in effective channel length due to hot-electron trapping in short-channel m.o.s.t.s.
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 26 |
CMOS reliability
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 27 |
Courses
|
|
|
1978
|
17 |
6 |
p. 553-
1 p.
|
artikel
|
| 28 |
D.c. and high-frequency characteristics of built-in channel MOS-FETs
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 29 |
Dense, interchangeable ROMs work with fast microprocessors
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 30 |
Design and performance of micron-size devices
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 31 |
Determination of optimal overhaul intervals and inspection frequencies—A case study
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 32 |
Determination of surface state density from gm-Vg characteristics of MOSFETs
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 33 |
Developments likely to improve the reliability of plastic encapsulated devices
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 34 |
Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling
|
|
|
1978
|
17 |
6 |
p. 569-
1 p.
|
artikel
|
| 35 |
Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures
|
|
|
1978
|
17 |
6 |
p. 566-567
2 p.
|
artikel
|
| 36 |
Effect of reliability programs on life cycle cost—a case history
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 37 |
Effects of design automation on the reliability and maintainability design of electronic systems
|
|
|
1978
|
17 |
6 |
p. 560-561
2 p.
|
artikel
|
| 38 |
Effects of Weibull hazard rate on common cause failure analysis of reliability networks
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 39 |
Electron-hole droplets in strained Ge and Si
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 40 |
Ellipsometry for semiconductor process control
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 41 |
Energy and momentum relaxation of charge carriers in Ge and Si under uniaxial stress
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 42 |
Engineering and reliability aspects of connectors in electronic system applications
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 43 |
EPR spectra of heat-treatment centers in oxygen-rich silicon
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 44 |
Estimating software reliability from test data
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 45 |
Evaluation of arsenic implanted layers by means of MOS memory characteristics
|
|
|
1978
|
17 |
6 |
p. 569-
1 p.
|
artikel
|
| 46 |
Exponential excitation expansion: A new method of vibration testing
|
Blanks, H.S.
|
|
1978
|
17 |
6 |
p. 575-582
8 p.
|
artikel
|
| 47 |
Fault trees revisited
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 48 |
Fuse resistor consisting of a metallic thin film and a polymerized organic film on a substrate
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 49 |
High temperature properties of solid tantalum chip capacitors
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 50 |
High temperature thermal characteristics of microelectronic packages
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 51 |
Hybrid realisation of high precision analog conversion modules
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 52 |
Hybrids in telecommunications
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 53 |
Hydrogen states in amorphous Ge
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 54 |
I2L puts it all together for 10-bit a-d converter chip
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 55 |
I2L threshold circuits for binary-quaternary encoding and decoding
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 56 |
Improved slicing and orientation technique for I.D. sawing
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 57 |
Influence of Se atoms on the properties of amorphous Ge
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 58 |
Inorganic dielectric films for III–V compounds
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 59 |
Interaction between two hybrid modes in n-GaAs
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 60 |
Interband scattering effects on secondary ionization coefficients in GaAs
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 61 |
Intermittently used redundant system
|
Kapur, P.K.
|
|
1978
|
17 |
6 |
p. 593-596
4 p.
|
artikel
|
| 62 |
LCC—The implications on internal data collection
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 63 |
Linear IC automatically focuses camera lens
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 64 |
Low-cost microcomputing: The personal computer and single-board computer revolutions
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 65 |
Magnetic and electrical properties in amorphous GeSeFe films
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 66 |
Measurements on bulk-channel MOS capacitors for dark current characterization of peristaltic charge-coupled devices
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 67 |
Method of reliability analysis of control systems for nuclear power plants
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 68 |
New arrivals in the bulk storage inventory
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 69 |
Nonplanar power field-effect transistor (V-f.e.t.)
|
|
|
1978
|
17 |
6 |
p. 564-565
2 p.
|
artikel
|
| 70 |
N-Unit parallel redundant system with correlated failure and single repair facility
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 71 |
On a two unit standby redundant system with imperfect switchover
|
Subramanian, R.
|
|
1978
|
17 |
6 |
p. 585-586
2 p.
|
artikel
|
| 72 |
On optimizing maintainability
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 73 |
On the interpretation of electrical measurements on the GaAs-MOS system
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 74 |
On the theory of sublinear current-voltage characteristics of semiconductor structures
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 75 |
Operating system redundancy on an active, a stand-by or a passive basis
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 76 |
Operation and characterization of N-channel EPROM cells
|
|
|
1978
|
17 |
6 |
p. 564-
1 p.
|
artikel
|
| 77 |
Output probability expression for general combinational networks
|
Aggarwal, K.K.
|
|
1978
|
17 |
6 |
p. 601-602
2 p.
|
artikel
|
| 78 |
Partitioning of modular equipment for fault isolation
|
Sheskin, Theodore J.
|
|
1978
|
17 |
6 |
p. 597-600
4 p.
|
artikel
|
| 79 |
Planar Zn diffusion in InP
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 80 |
Producing highly reliable joints for spacecraft electronics
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 81 |
Publications, notices, calls for papers, etc.
|
|
|
1978
|
17 |
6 |
p. 547-
1 p.
|
artikel
|
| 82 |
Reaction of thin metal films with SiO2 substrates
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 83 |
Recent patents on microelectronics
|
|
|
1978
|
17 |
6 |
p. 555-558
4 p.
|
artikel
|
| 84 |
Recombination-generation currents in degenerate semiconductors
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 85 |
Reliability: An aid to design in pursuit of total quality control
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 86 |
Reliability of large equipment and systems of nuclear power plants
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 87 |
Reliable software through requirements definition using data abstractions
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 88 |
Resistivity measurement of thin doped semiconductor layers by means of four point-contacts arbitrarily spaced on a circumference of arbitrary radius
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 89 |
Say it in a high-level language with 64-K read-only memories
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 90 |
Screening methods and experience with MOS memory
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 91 |
Sheet resistance variations of phosphorus implanted silicon at elevated temperatures
|
|
|
1978
|
17 |
6 |
p. 569-
1 p.
|
artikel
|
| 92 |
Silicon epitaxial growth via dichlorosilane in a barrel reactor
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 93 |
Some aspects of multilayer ceramic chip capacitors for hybrid circuits
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 94 |
Some aspects of the need for redundancy in telecommunication transmission systems
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 95 |
Spurious signal generation in plastic film capacitors
|
|
|
1978
|
17 |
6 |
p. 563-564
2 p.
|
artikel
|
| 96 |
Stochastic behaviour of a 1-server 2-unit hot standby system
|
Venkatachalam, Parvatham
|
|
1978
|
17 |
6 |
p. 603-604
2 p.
|
artikel
|
| 97 |
Stochastic behaviour of a 2-unit system with 1-server subject to delayed maintenance
|
Gopalan, M.N.
|
|
1978
|
17 |
6 |
p. 587-589
3 p.
|
artikel
|
| 98 |
Structuring software development for reliability
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 99 |
System diagnosis with FLIP
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 100 |
The AN/ARC-164 radio: Life-cycle-cost savings
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
| 101 |
The behaviour of boron molecular ion implants into silicon
|
|
|
1978
|
17 |
6 |
p. 569-
1 p.
|
artikel
|
| 102 |
The development of precision thin film resistors for submerged repeater applications
|
|
|
1978
|
17 |
6 |
p. 567-
1 p.
|
artikel
|
| 103 |
The far-infrared absorption spectrum of electron-hole drops in silicon
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 104 |
The influence of design and process parameters on the reliability of CMOS integrated circuits
|
|
|
1978
|
17 |
6 |
p. 559-
1 p.
|
artikel
|
| 105 |
The microprocessor failure rate predictions
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 106 |
The one-lump Linvill model of a semiconductor region with arbitrary doping profile and recombination. Application for a model of lateral transistor
|
|
|
1978
|
17 |
6 |
p. 566-
1 p.
|
artikel
|
| 107 |
The structure and properties of reactively bonded thick film gold conductors
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 108 |
The time dependent failure rate of a system consisting of three 50%-units in active parallel
|
|
|
1978
|
17 |
6 |
p. 561-
1 p.
|
artikel
|
| 109 |
The ultrasonic welding mechanism as applied to aluminum- and gold-wire bonding in microelectronics
|
|
|
1978
|
17 |
6 |
p. 563-
1 p.
|
artikel
|
| 110 |
Thick photoresist patterns for selective electroplating
|
|
|
1978
|
17 |
6 |
p. 568-
1 p.
|
artikel
|
| 111 |
Threshold voltage instability of MOS field effect transistors
|
|
|
1978
|
17 |
6 |
p. 560-
1 p.
|
artikel
|
| 112 |
Two-dimensional modelling of s.o.s. transistors
|
|
|
1978
|
17 |
6 |
p. 565-
1 p.
|
artikel
|
| 113 |
Utilization of quality data for cost cutting
|
|
|
1978
|
17 |
6 |
p. 562-
1 p.
|
artikel
|
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