no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A CMOS/buried-n-channel CCD compatible process for analog signal processing applications
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
2 |
A comparison of simple and numerical two-dimensional modesla for the threshold voltage of short channel MOSTS
|
|
|
1978 |
17 |
4 |
p. 423-424 2 p. |
article |
3 |
A complete microcomputer on a chip
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
4 |
A-d converter chip resolves 10 bits
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
5 |
A decomposition method for computing system reliability by a Boolean expression
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
6 |
Adhesion measurements of metallizations for hybrid microcircuits
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
7 |
Ageing tests on microwave integrated circuits
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
8 |
Allocation of test effort for minimum variance of reliability
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
9 |
Alloy element additions to gold thick film conductors: effects on indium/lead soldering and ultrasonic aluminum wire bonding
|
|
|
1978 |
17 |
4 |
p. 426-427 2 p. |
article |
10 |
All-tantalum wet-slug capacitor overcomes catastrophic failure
|
|
|
1978 |
17 |
4 |
p. 413- 1 p. |
article |
11 |
Analog 1/0 hybrids simplify microprocessor interlaces
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
12 |
Analysis of non-catastrophic failures in electronic devices due to random noise
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
13 |
Analysis of superposition errors in wafer fabrication
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
14 |
An analysis of diffusion process control
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
15 |
A new 96 percent improved alumina substrate
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
16 |
An ion implanted bipolar silicon integrated circuit process
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
17 |
An optimal decision rule for repair vs replacement
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
18 |
A reduction technique for obtaining a simplified reliability expression
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
19 |
A study of the reliability of microwave transistors
|
|
|
1978 |
17 |
4 |
p. 413-414 2 p. |
article |
20 |
A test approach for commercial communication satellites
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
21 |
Automatic registration in an electron-beam lithographic system
|
|
|
1978 |
17 |
4 |
p. 429- 1 p. |
article |
22 |
Availability of a certain item within a system
|
|
|
1978 |
17 |
4 |
p. 418-419 2 p. |
article |
23 |
Availability prediction by using a method of simulation
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
24 |
A variance minimization method of reliability design
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
25 |
Bubble memory as small mass storage
|
|
|
1978 |
17 |
4 |
p. 422-423 2 p. |
article |
26 |
Calculating the cost of testing LSI chips
|
|
|
1978 |
17 |
4 |
p. 419-420 2 p. |
article |
27 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1978 |
17 |
4 |
p. 405-407 3 p. |
article |
28 |
CALHYM: A computer program for the automatic layout of large digital hybrid microcircuits
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
29 |
Capacitors of thin insulating films of photoresist materials
|
Singh, Awatar |
|
1978 |
17 |
4 |
p. 441-444 4 p. |
article |
30 |
Capture cross-section of excitons on neutral indium impurities in silicon
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
31 |
Characterization of properties of nickel in silicon using thermally stimulated capacitance method
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
32 |
Chip carriers are making inroads
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
33 |
Combined environment reliability test (CERT)
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
34 |
Comparison of arc erosive and laser beam trimming of thin film resistors
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
35 |
Component reliability exposed to thermal neutron environment—I
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
36 |
Component reliability exposed to thermal neutron environment—II
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
37 |
Component reliability exposed to thermal neutron environment—III
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
38 |
Corona discharge—electrostatic method for deposition of powdered passivation glass on semiconductor devices
|
|
|
1978 |
17 |
4 |
p. 420-421 2 p. |
article |
39 |
Correction of nonlinear deflection distortion in a direct exposure electron-beam system
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
40 |
Cost model for testing program based on nonhomogeneous poisson failure model
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
41 |
Criteria of low-noise thick-film resistors
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
42 |
Crystal growth by molecular beam epitaxy
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
43 |
Decision making in reliability
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
44 |
Determination of gold concentration and the effective impurity doping at the silicon/silicon-dioxide interface
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
45 |
Effect of substrate bias on properties of rf-sputtered Cr-SiO films
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
46 |
Effects of electrostatic discharge on linear bipolar integrated circuits
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
47 |
Electron optics of an electron-beam lithographic system
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
48 |
Etude d'un bloc de calcul a CCD pour le traitement numerique du signal
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
49 |
Experimental evidence against the shell model of bound multiexciton complexes in silicon
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
50 |
Factors affecting laser-trim stability of thick film resistors
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
51 |
Factors governing aluminium interconnection corrosion in plastic encapsulated microelectronic devices
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
52 |
Failure-rate as a function of time due to lognormal life distribution(s) of weak parts
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
53 |
Gate protection for CMOS/SOS
|
|
|
1978 |
17 |
4 |
p. 415-416 2 p. |
article |
54 |
Green's function calculating of electric fields in surface-channel charge-coupled devices
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
55 |
High-pressure pyrogenic oxidation in the production environment
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
56 |
Hot-electron emission from silicon into silicon dioxide
|
|
|
1978 |
17 |
4 |
p. 425-426 2 p. |
article |
57 |
Impact of the frequency of technician visits on facility failure rate
|
|
|
1978 |
17 |
4 |
p. 417-418 2 p. |
article |
58 |
Improved hybrid circuit assembly yields and reliability by glassivation of the semiconductor chip
|
|
|
1978 |
17 |
4 |
p. 413- 1 p. |
article |
59 |
Industry standard for B-Series CMOS
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
60 |
Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique
|
|
|
1978 |
17 |
4 |
p. 424-425 2 p. |
article |
61 |
Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
62 |
Integrated circuits for data transmission
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
63 |
Ion implantation for semiconductor devices
|
|
|
1978 |
17 |
4 |
p. 429- 1 p. |
article |
64 |
Ion milling for semiconductor production processes
|
|
|
1978 |
17 |
4 |
p. 429- 1 p. |
article |
65 |
Japanese laboratory is growing 5-in.-diameter ingots
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
66 |
65-k RAMs won't slight performance
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
67 |
Literature survey on three-state device reliability systems
|
|
|
1978 |
17 |
4 |
p. 413- 1 p. |
article |
68 |
Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistors
|
|
|
1978 |
17 |
4 |
p. 424- 1 p. |
article |
69 |
LSI: the testing nightmare
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
70 |
Magnetic fields and the stability of charge-density—wave ground-states in silicon inversion layers
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
71 |
Masks for printing thick-film circuits
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
72 |
Maximum reliability route subject to k-improvements in a directed network
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
73 |
Memory makers brace for bubble battle
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
74 |
8086 microcomputer bridges the gap between 8- and 16-bit designs
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
75 |
Microprocessor analysers in the development and support of microprocessor based systems
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
76 |
Microscopic techniques in the analysis of mechanical failures
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
77 |
Modern physics brings semiconductor technology to a turning point
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
78 |
Morphology and electrical parameters of MOS microelectronics circuits
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
79 |
Mospower—the challenge to power bipolars
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
80 |
Multiobjective reliability and redundancy optimization of a series-parallel system by the Surrogate Worth Trade-off method
|
Sakawa, Masatoshi |
|
1978 |
17 |
4 |
p. 465-467 3 p. |
article |
81 |
Negative differential resistance in (100) n-channel silicon inversion layers
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
82 |
New analogue component concepts for digital processing systems
|
|
|
1978 |
17 |
4 |
p. 421-422 2 p. |
article |
83 |
New reaction kinetic aspects of thermal oxidation of sputtered tantalum (nitride) layers
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
84 |
Noise injection as a measure of semiconductor component performance and degradation
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
85 |
One chip controllers and 4-K static rams star
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
86 |
On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
87 |
Optimal placement of spare modules in a cascaded chain
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
88 |
Optimal replacement rate of devices with lognormal failure distributions
|
|
|
1978 |
17 |
4 |
p. 416-417 2 p. |
article |
89 |
Optimal selection of sequential tests for reliability
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
90 |
Optimisation of thin and thick film technology for hybrid microwave circuits
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
91 |
Optimum number of checks in checking policy
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
92 |
Optimum redundancy of repairable modules
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
93 |
Origin and effects of negative ions in the sputtering of intermetallic compounds
|
|
|
1978 |
17 |
4 |
p. 427-428 2 p. |
article |
94 |
Oscillators for use in integrated microwave technique
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
95 |
Plasma process development and monitoring via mass spectrometry
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
96 |
Plastic encapsulated semiconductor devices—A bibliography
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
97 |
Powerful LSI devices bow at silver anniversary (Solid State Circuits Conference, San Francisco)
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
98 |
Probability of displacement damage in a component exposed to nuclear radiation stress from the viewpoint of reliability
|
Lal, Krishan |
|
1978 |
17 |
4 |
p. 435-439 5 p. |
article |
99 |
Prognostication of drift failures
|
|
|
1978 |
17 |
4 |
p. 413- 1 p. |
article |
100 |
Prospects for GaAs mosfet integration
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
101 |
Queuing models for estimating aircraft fleet availability
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
102 |
Random point processes applied to availability analysis of redundant systems with repair
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
103 |
Reactive sputtering of NiCr resistors with closely adjustable temperature coefficient of resistance
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
104 |
Recent patents on microelectronics
|
|
|
1978 |
17 |
4 |
p. 409-412 4 p. |
article |
105 |
Reduced gold-plating on copper leads for thermocompression bonding—Part I—Initial characterization
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
106 |
Reed switch reliability
|
Saraf, R.K. |
|
1978 |
17 |
4 |
p. 431-433 3 p. |
article |
107 |
Reliability analysis of standby repairable systems when an emergency occurs
|
Nakagawa, T. |
|
1978 |
17 |
4 |
p. 461-464 4 p. |
article |
108 |
Reliability growth apportionment
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
109 |
Reliability improvement by redundancy voting in analogue electronic systems
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
110 |
Reliability study of wire bonds to silver plated surfaces
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
111 |
Reliability testing of BAC hybrid circuits
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
112 |
Remarks on wire and die bonding for hybrid circuits
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
113 |
Resistivity of phosphorus-doped sputter-deposited polycrystalline silicon films
|
|
|
1978 |
17 |
4 |
p. 424- 1 p. |
article |
114 |
Review of experimental aspects of hot electron transport in MOS structures
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
115 |
RIW with cost sharing
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
116 |
Role of assurance technologies in M-PRT evaluation
|
|
|
1978 |
17 |
4 |
p. 417- 1 p. |
article |
117 |
Sample-hold chip delivers precision
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
118 |
Scanning electron-beam system turns out IC wafers fast
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
119 |
Selecting the prior distribution in Bayesian estimation
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
120 |
Semiconductors: toeing the (microfine) line
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
121 |
Sensitivity of Bayes estimates of reciprocal MTBF and reliability to an incorrect failure model
|
|
|
1978 |
17 |
4 |
p. 419- 1 p. |
article |
122 |
Silicon surface emission of hot electrons
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
123 |
Simulating maintenance work in an engineering firm: a case study
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
124 |
Some experiences and conclusions using soldered and welded packages for hermetic thick film hybrids
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
125 |
Statistical methods for estimating variance components for integrated circuits device parameters
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
126 |
Studies of second breakdown in silicon diodes
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
127 |
Superlinearity in a Bi-implanted CdS thin film
|
|
|
1978 |
17 |
4 |
p. 428- 1 p. |
article |
128 |
Suppression of premature dielectric breakdown for high-voltage capacitance measurements
|
|
|
1978 |
17 |
4 |
p. 414- 1 p. |
article |
129 |
Surface potentials of interacting metallic films
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
130 |
Surface quantum oscillations in n-type (100) silicon inversion layers on sapphire
|
|
|
1978 |
17 |
4 |
p. 424- 1 p. |
article |
131 |
System availability and optimum spare units
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
132 |
Tests show spotty LSI records
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
133 |
The construction and reliability of Schottky diodes
|
Croft, D.C. |
|
1978 |
17 |
4 |
p. 445-455 11 p. |
article |
134 |
The distributed RC variable-frequency phase-shift oscillator
|
Miller, C.A. |
|
1978 |
17 |
4 |
p. 457-460 4 p. |
article |
135 |
The effects of trimming on the current noise of thick film resistors
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
136 |
The evaluation of CMOS static-charge protection networks and failure mechanisms associated with overstress conditions as related to device life
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
137 |
The obsolescence of the microprocessor
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
138 |
Theory of switching phenomena in metal/semi-insulator/n-p silicon devices
|
|
|
1978 |
17 |
4 |
p. 424- 1 p. |
article |
139 |
The role of customer Q.A. in reducing hybrid reliability problems
|
|
|
1978 |
17 |
4 |
p. 413- 1 p. |
article |
140 |
Thin-film hybrid circuits
|
|
|
1978 |
17 |
4 |
p. 426- 1 p. |
article |
141 |
Thin film integrated RC-networks with compensated temperature coefficients of R and C
|
|
|
1978 |
17 |
4 |
p. 427- 1 p. |
article |
142 |
Time dependent unavailability analysis of nuclear safety systems
|
|
|
1978 |
17 |
4 |
p. 416- 1 p. |
article |
143 |
Timer IC circuit separates rep rate and duty cycle
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |
144 |
Transferred electron effects in n-GaAs and n-InP under hydrostatic pressure
|
|
|
1978 |
17 |
4 |
p. 425- 1 p. |
article |
145 |
Transistor gain and diffusion effects
|
|
|
1978 |
17 |
4 |
p. 421- 1 p. |
article |
146 |
Transport of hot carriers in semiconductor quantized inversion layers
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
147 |
Une methode de conception rapide et fiable des circuits integres avec controle automatique de l'implantation
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
148 |
Une nouvelle technique de croissance epitaxiale de couches ultraminces d'arseniure de gallium par cracking de composes organometalliques sous pression reduite
|
|
|
1978 |
17 |
4 |
p. 423- 1 p. |
article |
149 |
2-Unit redundant systems with replacement and repair
|
|
|
1978 |
17 |
4 |
p. 418- 1 p. |
article |
150 |
Voltage breakdown characteristics of close spaced aluminum arc gap structures on oxidised silicon
|
|
|
1978 |
17 |
4 |
p. 415- 1 p. |
article |
151 |
What to look for in analog input/output boards
|
|
|
1978 |
17 |
4 |
p. 420- 1 p. |
article |
152 |
X-band microwave integrated circuits using slotline and coplanar waveguide
|
|
|
1978 |
17 |
4 |
p. 422- 1 p. |
article |