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                             95 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison or reliability growth models 1976
15 4 p. 266-
1 p.
artikel
2 Age replacement in simple systems with increasing loss functions 1976
15 4 p. 265-266
2 p.
artikel
3 A method for fixing criteria of accepting continuous runs 1976
15 4 p. 266-
1 p.
artikel
4 A micropower complementary-MOS d.c. amplifier 1976
15 4 p. 268-
1 p.
artikel
5 A modified reliability expression for the electromigration time-to-failure 1976
15 4 p. 265-
1 p.
artikel
6 An evaluation of techniques for bonding beam-lead devices to gold thick films 1976
15 4 p. 268-
1 p.
artikel
7 A new algorithm for symbolic system reliability analysis 1976
15 4 p. 266-
1 p.
artikel
8 A new approach to memory testing Morgan, M.K.M.
1976
15 4 p. 351-353
3 p.
artikel
9 A new family of monolithic A/D converter circuits and their applications Fullagar, David
1976
15 4 p. 339-342
4 p.
artikel
10 A new method in the theory of indirect excitons in semiconductors 1976
15 4 p. 269-
1 p.
artikel
11 A new method of the reliability analysis for semiconductor devices 1976
15 4 p. 264-
1 p.
artikel
12 Anomalous hall effect and carrier transport in bandtails at the Si-SiO2 interface 1976
15 4 p. 270-
1 p.
artikel
13 A single-chip 16-bit microprocessor for general application 1976
15 4 p. 268-269
2 p.
artikel
14 A study and implementation of a semiconductor memory board 1976
15 4 p. 268-
1 p.
artikel
15 Availability of a renewable, checked system 1976
15 4 p. 266-
1 p.
artikel
16 Behaviour of various silicon Schottky barrier diodes under heat treatment 1976
15 4 p. 265-
1 p.
artikel
17 Calendar of international conferences, symposia, lectures and meetings of interest 1976
15 4 p. 251-253
3 p.
artikel
18 Capacitance of MOS diodes on substrates doped non-uniformly near the surface 1976
15 4 p. 270-
1 p.
artikel
19 CCD — A replacement for drum stores Kornstein, Howard
1976
15 4 p. 343-345
3 p.
artikel
20 CDI, the bipolar LSI technology with total systems integration capability 1976
15 4 p. 269-
1 p.
artikel
21 Computational time and absolute error comparison for reliability expression derived by various methods 1976
15 4 p. 267-
1 p.
artikel
22 Computer controls IC ‘wet cycles’ 1976
15 4 p. 268-
1 p.
artikel
23 Confidence and “A” and “B” allowable factors for the Weibull Distribution 1976
15 4 p. 267-
1 p.
artikel
24 Current liquid crystal display technology Freer, W.G.
1976
15 4 p. 315-321
7 p.
artikel
25 Current noise in surface layer integrated resistors 1976
15 4 p. 268-
1 p.
artikel
26 Current tracer pinpoints failures 1976
15 4 p. 266-
1 p.
artikel
27 C-V characteristics of ion implanted depletion IGFETs and buried channel CCDs 1976
15 4 p. 271-
1 p.
artikel
28 Dependability under priority repair disciplines 1976
15 4 p. 266-
1 p.
artikel
29 Depletion mode shrinks CPU chips 1976
15 4 p. 269-
1 p.
artikel
30 Design and quality assurance of microwave bipolar transistors for high-reliability applications 1976
15 4 p. 264-
1 p.
artikel
31 Design for reliability 1976
15 4 p. 263-
1 p.
artikel
32 Detection by low temperature photoluminescence of oxygen recoils in “through-oxide” arsenic implanted silicon 1976
15 4 p. 270-
1 p.
artikel
33 Development d'un modele theorique d'evolution de surfaces soumises au bombardement ionique pour applications à la gravure 1976
15 4 p. 271-
1 p.
artikel
34 Editorial 1976
15 4 p. 249-
1 p.
artikel
35 Effect of substrate resistance on MOS distributed RC notch network 1976
15 4 p. 269-
1 p.
artikel
36 Electron beams help shape better circuits 1976
15 4 p. 271-
1 p.
artikel
37 Enhancement of breakdown voltage using floating metal field plates 1976
15 4 p. 264-
1 p.
artikel
38 Environmental conditions considered when calculating circuits 1976
15 4 p. 266-267
2 p.
artikel
39 Estimation of Weibull parameters with competing-mode censoring 1976
15 4 p. 266-
1 p.
artikel
40 Failure by the processes of nucleation and growth 1976
15 4 p. 266-
1 p.
artikel
41 Force between metallic films at small separation 1976
15 4 p. 271-
1 p.
artikel
42 Graphical estimation methods for Weibull distributors 1976
15 4 p. 267-
1 p.
artikel
43 In-built failure environments 1976
15 4 p. 263-
1 p.
artikel
44 Introduction to charge-coupled devices Beynon, J.D.E.
1976
15 4 p. 273-283
11 p.
artikel
45 Investigation of the second indirect transition of silicon by means of photoconductivity measurements 1976
15 4 p. 270-
1 p.
artikel
46 16-k RAM built with proven process may offer high start-up reliability 1976
15 4 p. 269-
1 p.
artikel
47 Laser scanning of MOS IC's reveals internal logic states nondestructively 1976
15 4 p. 272-
1 p.
artikel
48 Laser set-up makes high-resolution IC masks in Sweden 1976
15 4 p. 271-
1 p.
artikel
49 Memory architecture and the influence of the microprocessor Peppiette, Geoff
1976
15 4 p. 307-313
7 p.
artikel
50 Methods for calculating the reliability of systems with intricate structures 1976
15 4 p. 267-
1 p.
artikel
51 MOS technology brings fun games to TV sets 1976
15 4 p. 267-
1 p.
artikel
52 Power circuits go monolithic 1976
15 4 p. 268-
1 p.
artikel
53 Preparation of thin metallic films of aluminium, lanthanum and dysprosium with minimum oxidation 1976
15 4 p. 271-
1 p.
artikel
54 Publications, notices, calls for papers, etc. 1976
15 4 p. 255-261
7 p.
artikel
55 Recent advances in LIC processing and packaging technology 1976
15 4 p. 268-
1 p.
artikel
56 Recent developments in the design and application of a bipolar control store sequencer and other MPU associated LSI components Lau, Steve
1976
15 4 p. 329-333
5 p.
artikel
57 Relationship between reliability equivalent circuits and error trees 1976
15 4 p. 267-
1 p.
artikel
58 Reliability analysis of intermittently used systems when failures are detected only during a usage period 1976
15 4 p. 267-
1 p.
artikel
59 Reliability and flow graphs 1976
15 4 p. 263-
1 p.
artikel
60 Reliability growth of electronic equipment 1976
15 4 p. 267-
1 p.
artikel
61 Reliability of silicon power transistors 1976
15 4 p. 265-
1 p.
artikel
62 Resistor loops in hybrid circuits 1976
15 4 p. 271-
1 p.
artikel
63 Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, Part I. Test results and electrical failure analysis 1976
15 4 p. 264-
1 p.
artikel
64 Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, Part 2. Survey of dominant IC failure mechanisms and analysis of failure causes 1976
15 4 p. 264-265
2 p.
artikel
65 Self-consistent numerical solutions of p-type inversion layers in silicon MOS devices 1976
15 4 p. 270-
1 p.
artikel
66 Separation of surface and bulk components in MOS-C generation rate measurements 1976
15 4 p. 269-
1 p.
artikel
67 Simulation methods for determining the reliability of system 1976
15 4 p. 267-
1 p.
artikel
68 Single-chip, integrated digital voltmeter 1976
15 4 p. 269-
1 p.
artikel
69 Single-chip multiplier expands digital role in signal processing 1976
15 4 p. 268-
1 p.
artikel
70 Solid state displays, engineering considerations for the third generation Abraham, Roy
1976
15 4 p. 347-349
3 p.
artikel
71 Some advancements in the analysis of two-unit parallel redundant systems 1976
15 4 p. 266-
1 p.
artikel
72 Some investigations into optical probe testing of integrated circuits 1976
15 4 p. 264-
1 p.
artikel
73 Sophisticated techniques solve ink manufacturing problems 1976
15 4 p. 271-
1 p.
artikel
74 Stochastic behaviour of two-unit paralleled redundant systems with repair maintenance 1976
15 4 p. 267-
1 p.
artikel
75 Structure and applications of field programmable logic arrays Cavlan, Napoleone
1976
15 4 p. 285-295
11 p.
artikel
76 Survey of hybrid microelectronics in the U.K. Walton, B.
1976
15 4 p. 323-328
6 p.
artikel
77 The analysis of a four-state system 1976
15 4 p. 267-
1 p.
artikel
78 The closed boat: a new approach for semiconductor batch processing 1976
15 4 p. 268-
1 p.
artikel
79 The derivation of the activation energy for boron deposition using a boron nitride source 1976
15 4 p. 269-
1 p.
artikel
80 The development and future of television horizontal processors Avery, Les
1976
15 4 p. 297-305
9 p.
artikel
81 The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—II. Terminal characteristics 1976
15 4 p. 265-
1 p.
artikel
82 The effects of radiation damage on the properties of N-nGaAs Schottky diodes—I. Characterisation of defect levels 1976
15 4 p. 265-
1 p.
artikel
83 The effects of SO2 and H2S atmospheres on thick-film resistors 1976
15 4 p. 270-271
2 p.
artikel
84 The electronics properties of epitaxial layers 1976
15 4 p. 270-
1 p.
artikel
85 Theory of life-time measurements with the scanning electron microscope: steady state 1976
15 4 p. 270-
1 p.
artikel
86 Theory of lifetime measurements with the scanning electron microscope transient analysis 1976
15 4 p. 270-
1 p.
artikel
87 The squeegee in printing of electronic circuits 1976
15 4 p. 271-
1 p.
artikel
88 The use of reliable plastic semiconductors in military equipment 1976
15 4 p. 265-
1 p.
artikel
89 Thick film hybrid microcircuits — General applications Whitelaw, D.
1976
15 4 p. 335-338
4 p.
artikel
90 Thin-film circuits in transmission equipment 1976
15 4 p. 271-
1 p.
artikel
91 Tolerance field and yield comparisons of integrated RC active networks 1976
15 4 p. 268-
1 p.
artikel
92 Transistor structure relation to secondary breakdown and its effects 1976
15 4 p. 265-
1 p.
artikel
93 Weibull percentile estimates and confidence limits from singly censored data by maximum likelihood 1976
15 4 p. 266-
1 p.
artikel
94 What can CCD do for you 1976
15 4 p. 268-
1 p.
artikel
95 Will IC makers find converter niche 1976
15 4 p. 267-
1 p.
artikel
                             95 gevonden resultaten
 
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