nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison or reliability growth models
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
2 |
Age replacement in simple systems with increasing loss functions
|
|
|
1976 |
15 |
4 |
p. 265-266 2 p. |
artikel |
3 |
A method for fixing criteria of accepting continuous runs
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
4 |
A micropower complementary-MOS d.c. amplifier
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
5 |
A modified reliability expression for the electromigration time-to-failure
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
6 |
An evaluation of techniques for bonding beam-lead devices to gold thick films
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
7 |
A new algorithm for symbolic system reliability analysis
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
8 |
A new approach to memory testing
|
Morgan, M.K.M. |
|
1976 |
15 |
4 |
p. 351-353 3 p. |
artikel |
9 |
A new family of monolithic A/D converter circuits and their applications
|
Fullagar, David |
|
1976 |
15 |
4 |
p. 339-342 4 p. |
artikel |
10 |
A new method in the theory of indirect excitons in semiconductors
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
11 |
A new method of the reliability analysis for semiconductor devices
|
|
|
1976 |
15 |
4 |
p. 264- 1 p. |
artikel |
12 |
Anomalous hall effect and carrier transport in bandtails at the Si-SiO2 interface
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
13 |
A single-chip 16-bit microprocessor for general application
|
|
|
1976 |
15 |
4 |
p. 268-269 2 p. |
artikel |
14 |
A study and implementation of a semiconductor memory board
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
15 |
Availability of a renewable, checked system
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
16 |
Behaviour of various silicon Schottky barrier diodes under heat treatment
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
17 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1976 |
15 |
4 |
p. 251-253 3 p. |
artikel |
18 |
Capacitance of MOS diodes on substrates doped non-uniformly near the surface
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
19 |
CCD — A replacement for drum stores
|
Kornstein, Howard |
|
1976 |
15 |
4 |
p. 343-345 3 p. |
artikel |
20 |
CDI, the bipolar LSI technology with total systems integration capability
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
21 |
Computational time and absolute error comparison for reliability expression derived by various methods
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
22 |
Computer controls IC ‘wet cycles’
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
23 |
Confidence and “A” and “B” allowable factors for the Weibull Distribution
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
24 |
Current liquid crystal display technology
|
Freer, W.G. |
|
1976 |
15 |
4 |
p. 315-321 7 p. |
artikel |
25 |
Current noise in surface layer integrated resistors
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
26 |
Current tracer pinpoints failures
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
27 |
C-V characteristics of ion implanted depletion IGFETs and buried channel CCDs
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
28 |
Dependability under priority repair disciplines
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
29 |
Depletion mode shrinks CPU chips
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
30 |
Design and quality assurance of microwave bipolar transistors for high-reliability applications
|
|
|
1976 |
15 |
4 |
p. 264- 1 p. |
artikel |
31 |
Design for reliability
|
|
|
1976 |
15 |
4 |
p. 263- 1 p. |
artikel |
32 |
Detection by low temperature photoluminescence of oxygen recoils in “through-oxide” arsenic implanted silicon
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
33 |
Development d'un modele theorique d'evolution de surfaces soumises au bombardement ionique pour applications à la gravure
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
34 |
Editorial
|
|
|
1976 |
15 |
4 |
p. 249- 1 p. |
artikel |
35 |
Effect of substrate resistance on MOS distributed RC notch network
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
36 |
Electron beams help shape better circuits
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
37 |
Enhancement of breakdown voltage using floating metal field plates
|
|
|
1976 |
15 |
4 |
p. 264- 1 p. |
artikel |
38 |
Environmental conditions considered when calculating circuits
|
|
|
1976 |
15 |
4 |
p. 266-267 2 p. |
artikel |
39 |
Estimation of Weibull parameters with competing-mode censoring
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
40 |
Failure by the processes of nucleation and growth
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
41 |
Force between metallic films at small separation
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
42 |
Graphical estimation methods for Weibull distributors
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
43 |
In-built failure environments
|
|
|
1976 |
15 |
4 |
p. 263- 1 p. |
artikel |
44 |
Introduction to charge-coupled devices
|
Beynon, J.D.E. |
|
1976 |
15 |
4 |
p. 273-283 11 p. |
artikel |
45 |
Investigation of the second indirect transition of silicon by means of photoconductivity measurements
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
46 |
16-k RAM built with proven process may offer high start-up reliability
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
47 |
Laser scanning of MOS IC's reveals internal logic states nondestructively
|
|
|
1976 |
15 |
4 |
p. 272- 1 p. |
artikel |
48 |
Laser set-up makes high-resolution IC masks in Sweden
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
49 |
Memory architecture and the influence of the microprocessor
|
Peppiette, Geoff |
|
1976 |
15 |
4 |
p. 307-313 7 p. |
artikel |
50 |
Methods for calculating the reliability of systems with intricate structures
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
51 |
MOS technology brings fun games to TV sets
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
52 |
Power circuits go monolithic
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
53 |
Preparation of thin metallic films of aluminium, lanthanum and dysprosium with minimum oxidation
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
54 |
Publications, notices, calls for papers, etc.
|
|
|
1976 |
15 |
4 |
p. 255-261 7 p. |
artikel |
55 |
Recent advances in LIC processing and packaging technology
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
56 |
Recent developments in the design and application of a bipolar control store sequencer and other MPU associated LSI components
|
Lau, Steve |
|
1976 |
15 |
4 |
p. 329-333 5 p. |
artikel |
57 |
Relationship between reliability equivalent circuits and error trees
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
58 |
Reliability analysis of intermittently used systems when failures are detected only during a usage period
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
59 |
Reliability and flow graphs
|
|
|
1976 |
15 |
4 |
p. 263- 1 p. |
artikel |
60 |
Reliability growth of electronic equipment
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
61 |
Reliability of silicon power transistors
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
62 |
Resistor loops in hybrid circuits
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
63 |
Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, Part I. Test results and electrical failure analysis
|
|
|
1976 |
15 |
4 |
p. 264- 1 p. |
artikel |
64 |
Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, Part 2. Survey of dominant IC failure mechanisms and analysis of failure causes
|
|
|
1976 |
15 |
4 |
p. 264-265 2 p. |
artikel |
65 |
Self-consistent numerical solutions of p-type inversion layers in silicon MOS devices
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
66 |
Separation of surface and bulk components in MOS-C generation rate measurements
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
67 |
Simulation methods for determining the reliability of system
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
68 |
Single-chip, integrated digital voltmeter
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
69 |
Single-chip multiplier expands digital role in signal processing
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
70 |
Solid state displays, engineering considerations for the third generation
|
Abraham, Roy |
|
1976 |
15 |
4 |
p. 347-349 3 p. |
artikel |
71 |
Some advancements in the analysis of two-unit parallel redundant systems
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
72 |
Some investigations into optical probe testing of integrated circuits
|
|
|
1976 |
15 |
4 |
p. 264- 1 p. |
artikel |
73 |
Sophisticated techniques solve ink manufacturing problems
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
74 |
Stochastic behaviour of two-unit paralleled redundant systems with repair maintenance
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
75 |
Structure and applications of field programmable logic arrays
|
Cavlan, Napoleone |
|
1976 |
15 |
4 |
p. 285-295 11 p. |
artikel |
76 |
Survey of hybrid microelectronics in the U.K.
|
Walton, B. |
|
1976 |
15 |
4 |
p. 323-328 6 p. |
artikel |
77 |
The analysis of a four-state system
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |
78 |
The closed boat: a new approach for semiconductor batch processing
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
79 |
The derivation of the activation energy for boron deposition using a boron nitride source
|
|
|
1976 |
15 |
4 |
p. 269- 1 p. |
artikel |
80 |
The development and future of television horizontal processors
|
Avery, Les |
|
1976 |
15 |
4 |
p. 297-305 9 p. |
artikel |
81 |
The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—II. Terminal characteristics
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
82 |
The effects of radiation damage on the properties of N-nGaAs Schottky diodes—I. Characterisation of defect levels
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
83 |
The effects of SO2 and H2S atmospheres on thick-film resistors
|
|
|
1976 |
15 |
4 |
p. 270-271 2 p. |
artikel |
84 |
The electronics properties of epitaxial layers
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
85 |
Theory of life-time measurements with the scanning electron microscope: steady state
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
86 |
Theory of lifetime measurements with the scanning electron microscope transient analysis
|
|
|
1976 |
15 |
4 |
p. 270- 1 p. |
artikel |
87 |
The squeegee in printing of electronic circuits
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
88 |
The use of reliable plastic semiconductors in military equipment
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
89 |
Thick film hybrid microcircuits — General applications
|
Whitelaw, D. |
|
1976 |
15 |
4 |
p. 335-338 4 p. |
artikel |
90 |
Thin-film circuits in transmission equipment
|
|
|
1976 |
15 |
4 |
p. 271- 1 p. |
artikel |
91 |
Tolerance field and yield comparisons of integrated RC active networks
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
92 |
Transistor structure relation to secondary breakdown and its effects
|
|
|
1976 |
15 |
4 |
p. 265- 1 p. |
artikel |
93 |
Weibull percentile estimates and confidence limits from singly censored data by maximum likelihood
|
|
|
1976 |
15 |
4 |
p. 266- 1 p. |
artikel |
94 |
What can CCD do for you
|
|
|
1976 |
15 |
4 |
p. 268- 1 p. |
artikel |
95 |
Will IC makers find converter niche
|
|
|
1976 |
15 |
4 |
p. 267- 1 p. |
artikel |