| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A 2048-bit n-channel fully decoded electrically writable/erasable nonvolatile read only memory
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 2 |
A burn-in program for wearout unaffected equipments
|
Gironi, G.
|
|
1976
|
15 |
3 |
p. 227-232
6 p.
|
article
|
| 3 |
Accelerated vibration fatigue life testing of leads and soldered joints
|
Blanks, H.S.
|
|
1976
|
15 |
3 |
p. 213-219
7 p.
|
article
|
| 4 |
A fast thick-film amplifier
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 5 |
A fully ion-implanted integrated circuit process
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 6 |
A high accuracy differentiator using integrated circuits
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 7 |
A high density static master slave shiftregister in I2L
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 8 |
A hybrid thin-film multichannel biotelemetry transmitter
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 9 |
A large-scale integrated circuit for low power communication receivers
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 10 |
A monolithic digital frequency synthesizer for PLL systems
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 11 |
Analysis of a three-state system with two types of components
|
Dhillon, Balbir S.
|
|
1976
|
15 |
3 |
p. 245-246
2 p.
|
article
|
| 12 |
An integrated bandgap-reference
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 13 |
An integrated injection logic (IIL) realization of phase locked loop
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 14 |
An integrated wide-tunable sine oscillator
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 15 |
Anodizing silicon is economical way to isolate IC elements
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 16 |
An optimal inspection and replacement policy
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 17 |
A physical analysis of the operating temperature limits of complementary MOS transistor integrated circuits
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 18 |
Applications of the sojourn-time problem to reliability
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 19 |
A range of automatic finishing machines for thin-film hybrid circuits
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 20 |
A review of random access MOS memories
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 21 |
A selected bibliography on ion implantation in solid state technology
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 22 |
A simple hybrid thick-film band pass filter
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 23 |
A study of Pd2Si films on silicon using Auger electron spectroscopy
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 24 |
A study of the layer and junction properties of boron implantation in silicon
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 25 |
A technique for the testing of unassembled multilayer hybrid substrates
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 26 |
A technology for high speed computer systems
|
|
|
1976
|
15 |
3 |
p. 187-188
2 p.
|
article
|
| 27 |
A thick-film humidity sensor
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 28 |
A thick-film wide band amplifier
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 29 |
Automatic manufacture of custom hybrid microelectronic circuits
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 30 |
Availability allocation using a family of hyperbolic cost functions
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 31 |
Bond strength of metal layers on strip line substrates
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 32 |
Bright future for laser trimming
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 33 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1976
|
15 |
3 |
p. 171-172
2 p.
|
article
|
| 34 |
Characterization of CCD technology on 64 × 128 element photosensor
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 35 |
CHIL and I2L with passive isolation
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 36 |
Comparative investigation of thick-film and thin-film components and MIC's up to 16 GHz
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 37 |
Comparative studies of photoresist processing of microelectronics regarding chemical pollution, shortage and cost
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 38 |
Conduction theory applied to thick-film resistors
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 39 |
Current Developments in digital integrated circuits
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 40 |
Density of states determination of mixed semiconductors by neutron diffraction
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 41 |
Designing reliability into power circuits. Part 2
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 42 |
Discharge of MNOS structures at elevated temperatures
|
|
|
1976
|
15 |
3 |
p. 185-186
2 p.
|
article
|
| 43 |
Does parts screening really pay off
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 44 |
Easier custom design using uncommitted arrays
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 45 |
Electroless NiP processing for hybrid integrated circuits
|
van Nie, A.G.
|
|
1976
|
15 |
3 |
p. 221-226
6 p.
|
article
|
| 46 |
Electron spin resonance of ion-implanted Si:Pi system
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 47 |
ESFI SOS MOS Circuits with both complementary and enhancement/depletion-mode load devices
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 48 |
Evaluation of the noise index in laser-trimmed thick-film resistors
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 49 |
Exact capacitance of a lossless MOS capacitor
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 50 |
Experimental study of the properties of the contact between semiconductor and liquid crystal layers
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 51 |
Experiments with Operation Amplifiers
|
|
|
1976
|
15 |
3 |
p. 176-
1 p.
|
article
|
| 52 |
Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 53 |
Frozen-in native defects in semiconductor compounds
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 54 |
Gold in semiconductor technology
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 55 |
High-field transport in NiO and Ni 1−x Li x O thin films
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 56 |
High frequency characteristics of meandering line-resistors with regard to the design of thin-film circuits
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 57 |
High speed I2L
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 58 |
High tensile strength thick-film silver-palladium metallizations
|
|
|
1976
|
15 |
3 |
p. 186-187
2 p.
|
article
|
| 59 |
I2L getting a second look
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 60 |
Implantation of boron in silicon
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 61 |
Impurity bands in moderately doped semiconductors and their effect of the MOS C-V freeze-out characteristics
|
|
|
1976
|
15 |
3 |
p. 184-185
2 p.
|
article
|
| 62 |
Increased yield by early-stage production-line testing
|
|
|
1976
|
15 |
3 |
p. 177-189
13 p.
|
article
|
| 63 |
Injection of electrons from the surface breakdown region of a p-n junction into thermal SiO2
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 64 |
Integrated circuits for thermal imaging applications
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 65 |
Integrated circuits with leads on flexible tape
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 66 |
Irradiation-induced compensation of n-type germanium-electrical measurements
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 67 |
Microcircuit accelerated testing using high temperature operating tests
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 68 |
Microcircuit thermal design tables and computer program for two-dimensional layouts
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 69 |
Minority-carrier injection and transient response of a MOS capacitor
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 70 |
MNOS non-volatile quad latch
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 71 |
Monolithic crosspoint arrays in MOS and bipolar technologies
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 72 |
Noise and control problems. Designing reliability into equipment having power semiconductors. Part 1
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 73 |
Non-parabolicity and transverse mass of electron carriers in silicon
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 74 |
Nonsaturated integrated injection logic in circuit design
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 75 |
Observed failure rates of electronic components in computer systems
|
Lucas, Peter
|
|
1976
|
15 |
3 |
p. 239-243
5 p.
|
article
|
| 76 |
On the damage to metallized film capacitors caused by electrical discharges
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 77 |
Operation of single-channel MOS LSI at low supply voltages
|
|
|
1976
|
15 |
3 |
p. 180-181
2 p.
|
article
|
| 78 |
Optimum accelerated life-tests for the Weibull and extreme value distributions
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 79 |
Optimum censored accelerated life tests for normal and lognormal life distributions
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 80 |
Parametric tests meet the challenge of high-density ICs
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 81 |
Parasitar-effekte bei bipolaren integrierten Schaltungen
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 82 |
Partners in nuclear power
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 83 |
Polarizabilities of shallow donors in silicon—a comment
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 84 |
Problems relevant to quality conformance inspection of semiconductor electronic parts
|
Becker, P
|
|
1976
|
15 |
3 |
p. 191-211
21 p.
|
article
|
| 85 |
Publications, notices, calls for papers, etc.
|
|
|
1976
|
15 |
3 |
p. 173-175
3 p.
|
article
|
| 86 |
Relation between the potential-barrier shape and capacitance-voltage characteristics of MIS structures
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 87 |
Relays and logis ICs can be working partners
|
|
|
1976
|
15 |
3 |
p. 183-
1 p.
|
article
|
| 88 |
Reliability analyses of systems by means of ALGOL programmes
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 89 |
Reliability modeling and analysis of general modular redundant systems
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 90 |
Reliability of complementary MOS integrated circuits
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 91 |
Reliability of space systems
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 92 |
Reliability revisited: failure-rate comparisons are given a second look
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 93 |
Reliability study checks moisture levels in ICs
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 94 |
Resistive-insulated-gate arrays and their applications: an exploratory study
|
|
|
1976
|
15 |
3 |
p. 183-184
2 p.
|
article
|
| 95 |
Resonant interaction of acceptor states and optical phonons in silicon
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 96 |
Small-sample estimation for the lognormal distribution with unit shape parameter
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 97 |
Some applications of regenerative stochastic processes to reliability theory—Part Two: Reliability and Availability of 2-item redundant systems
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 98 |
Space-charge effect on excess carrier transport in semiconductors. Part II. Time evolution of the space-charge of excess carriers
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 99 |
Special report: film carriers star in high-volume IC production
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 100 |
Stability and forward diode voltage characteristics of conductive epoxy resin bonded devices
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 101 |
Sub-nanosecond bipolar LSI
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 102 |
Substrate bowing in thick-film multilayered circuits
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 103 |
Substrate FED logic—a novel form of injection logic
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 104 |
Supervision and maintenance of an integrated digital network
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 105 |
Supply lines for rapid integrated circuits on multilayer boards
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 106 |
Systems analysis by sequential fault trees
|
Henley, Ernest J.
|
|
1976
|
15 |
3 |
p. 247-248
2 p.
|
article
|
| 107 |
Taking the heat out of switching power supplies
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 108 |
Technological teaching of hybrid microelectronics (thick-film)
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 109 |
The assessment of thick-film resistor performance by high voltage pulsing
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 110 |
The bidirectional operation of lines with TTL circuits
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 111 |
The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques
|
|
|
1976
|
15 |
3 |
p. 184-
1 p.
|
article
|
| 112 |
The discrete Weibull distribution
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 113 |
The effect of electron irradiation on CdS-PbTe and CdS-Te thin-film diodes
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 114 |
The effect of series resistance and distributed parasitic diode action on multicollector I2L structures
|
|
|
1976
|
15 |
3 |
p. 182-
1 p.
|
article
|
| 115 |
The electron-hole drop and the impurity-induced semiconductor-metal transition
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 116 |
The electronic properties of epitaxial layers
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 117 |
The electronic properties of epitaxial layers. Part 1
|
|
|
1976
|
15 |
3 |
p. 181-
1 p.
|
article
|
| 118 |
The hybrid microelectronics explosion in Finland
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 119 |
The making of an integrated circuit
|
|
|
1976
|
15 |
3 |
p. 180-
1 p.
|
article
|
| 120 |
Theoretical and experimental study of MOS transistors nonuniformly doped by SILOX technique
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 121 |
Theoretical model for calculation of breakdown voltage of implanted p-n junctions
|
|
|
1976
|
15 |
3 |
p. 189-
1 p.
|
article
|
| 122 |
The problem of testing to MIL-STD-781B
|
|
|
1976
|
15 |
3 |
p. 178-179
2 p.
|
article
|
| 123 |
Thermal design considerations in CMOS circuits
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 124 |
The structure of incomplete destructive breakdown spots in thin polymer films
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 125 |
Thick-film advances simplify complex hybrid module design
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 126 |
Thick-film directional coupler design—a comparison of theories
|
|
|
1976
|
15 |
3 |
p. 186-
1 p.
|
article
|
| 127 |
Thick-film research in a university environment
|
|
|
1976
|
15 |
3 |
p. 187-
1 p.
|
article
|
| 128 |
Thin-film deposition techniques and design of thin-film passive components
|
Singh, Awatar
|
|
1976
|
15 |
3 |
p. 233-238
6 p.
|
article
|
| 129 |
Time-dependent MOS breakdown
|
|
|
1976
|
15 |
3 |
p. 178-
1 p.
|
article
|
| 130 |
Transient isothermal generation at the silicon-silicon oxide interface and the direct determination of interface trap distribution
|
|
|
1976
|
15 |
3 |
p. 185-
1 p.
|
article
|
| 131 |
Trimming of thin-film resistors by spark machining
|
|
|
1976
|
15 |
3 |
p. 188-
1 p.
|
article
|
| 132 |
Turning up system faults with gated-noise testing
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 133 |
Two new approaches simplify testing of microprocessors
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
| 134 |
User's tests, not data sheets, assure IC performance
|
|
|
1976
|
15 |
3 |
p. 177-
1 p.
|
article
|
| 135 |
Weighing the real cost of a board tester
|
|
|
1976
|
15 |
3 |
p. 179-
1 p.
|
article
|
Journal description