| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acquisition of reliability statements
|
|
|
1976
|
15 |
2 |
p. 101-
1 p.
|
artikel
|
| 2 |
Advances in ion implantation production equipment
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 3 |
Aging degradation of a Gunn Diode due to induced dislocations
|
|
|
1976
|
15 |
2 |
p. 101-
1 p.
|
artikel
|
| 4 |
Algorithms for solving reliability models of systems exposed to a two-state environment
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 5 |
A low-power circuit block for digital telephone exchanges
|
Kasperkovitz, D.
|
|
1976
|
15 |
2 |
p. 163-170
8 p.
|
artikel
|
| 6 |
A method of measuring thicknesses and doping profiles of homoepitaxial thin (from 0.1 μm on) films of silicon and gallium arsenide
|
|
|
1976
|
15 |
2 |
p. 106-107
2 p.
|
artikel
|
| 7 |
A method of studying thermocompression bonding damage in GaAs using the SEM
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 8 |
A monolithic integrated Schottky diode for microwave mixers
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 9 |
Amorphous GaP produced by ion implantation
|
|
|
1976
|
15 |
2 |
p. 110-111
2 p.
|
artikel
|
| 10 |
Analysis of faults located in a circular waveguide two-way pulse attenuation measurements
|
|
|
1976
|
15 |
2 |
p. 101-
1 p.
|
artikel
|
| 11 |
An approach for evaluating epoxy adhesives for use in hybrid microelectronic assembly
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 12 |
An experimental method to analyse trapping centres in silicon at very low concentrations
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 13 |
Application of computer to processing the results of tests of semiconductor devices
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 14 |
A review of the limitations of aluminium thin films on semiconductor devices
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 15 |
A six-state system model
|
Dhillon, Balbir S.
|
|
1976
|
15 |
2 |
p. 139-
1 p.
|
artikel
|
| 16 |
Automatic inspection system for telecommunications equipment
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 17 |
Availability of a system subject to irregular short supervision
|
|
|
1976
|
15 |
2 |
p. 102-103
2 p.
|
artikel
|
| 18 |
A versatile Ta2N-W-Au/SiO2/Al/SiO2 thin-film hybrid microcircuit metallization system
|
|
|
1976
|
15 |
2 |
p. 109-110
2 p.
|
artikel
|
| 19 |
Binary Ag-In ohmic contacts to GaAs and GaSb
|
|
|
1976
|
15 |
2 |
p. 108-109
2 p.
|
artikel
|
| 20 |
Bipolar. MOS large-scale integration vie for spotlight as device designers meet
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 21 |
Bridge transfer in sealed contacts—theory and life expectancy
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 22 |
Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 23 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1976
|
15 |
2 |
p. 93-94
2 p.
|
artikel
|
| 24 |
Characterization of gold-gold thermocompression bonding
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 25 |
Chemical analyses of thick-film gold conductor inks
|
|
|
1976
|
15 |
2 |
p. 109-
1 p.
|
artikel
|
| 26 |
Chemical vapor deposition systems for glass passivation of integrated circuits
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 27 |
COMPAS; A multichip LSI routing program
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 28 |
Computer-aided geometrical layout test for designing integrated circuits
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 29 |
Cost effectiveness of computerized laboratory automation
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 30 |
Cost efficiency of thick-film conductors
|
|
|
1976
|
15 |
2 |
p. 109-
1 p.
|
artikel
|
| 31 |
Current supply lines for rapid integrated circuits on two-plane printed circuit boards
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 32 |
Dielectric isolation techniques for integrated circuits
|
Bosnell, J.R.
|
|
1976
|
15 |
2 |
p. 113-122
10 p.
|
artikel
|
| 33 |
Diffusion of phosphorus into silicon using phosphine gas as a source
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 34 |
Distribution of a random variable defined through a constitutive equation
|
Ferris-Prabhu, A.V.
|
|
1976
|
15 |
2 |
p. 153-157
5 p.
|
artikel
|
| 35 |
Drift velocities of carriers in degenerate semiconductors
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 36 |
Electrical characteristics of “B”-implanted p-channel MNOS transistors
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 37 |
Experimental model aid for planar design of transistor characteristics in integrated circuits
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 38 |
Extremely high frequency hybrid integration—basis of progress in extremely high frequency device technology
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 39 |
Fabrication of short channel MOSFETS with refractory metal gates using RF sputter etching
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 40 |
Feasibility study of automatic assembly and inspection of light bulb filaments
|
|
|
1976
|
15 |
2 |
p. 101-102
2 p.
|
artikel
|
| 41 |
Four-inch wafers seen as standard in five years
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 42 |
Getting the most out of C-MOS devices for analog switching jobs
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 43 |
Graphical analysis of accelerated life test data with a mix of failure modes
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 44 |
Hall effect study of p-type high resistivity layers on n-type silicon substrates
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 45 |
High power density thin-film resistors
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 46 |
High reliability Ta/Al thin-film hybrid circuits
|
Duckworth, R.G.
|
|
1976
|
15 |
2 |
p. 141-146
6 p.
|
artikel
|
| 47 |
IC voltage regulator is adjustable
|
|
|
1976
|
15 |
2 |
p. 105-
1 p.
|
artikel
|
| 48 |
Insight into RAM costs aids memory-system design
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 49 |
Interfacial states spectrum of a metal-silicon junction
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 50 |
Investigation of polycrystalline silicon layers by electron microscopy and X-ray diffraction
|
|
|
1976
|
15 |
2 |
p. 107-108
2 p.
|
artikel
|
| 51 |
Investigation of the generation characteristics of metal-insulator-semiconductor structures
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 52 |
Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junction
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 53 |
Just how reliable are plastic encapsulated semiconductors for military applications and how can the maximum reliability be obtained?
|
Taylor, C.H.
|
|
1976
|
15 |
2 |
p. 131-134
4 p.
|
artikel
|
| 54 |
Linear Integrated Circuit Applications
|
G.W.A.D.,
|
|
1976
|
15 |
2 |
p. 99-
1 p.
|
artikel
|
| 55 |
Low voltage triode sputtering with a confined plasma
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 56 |
LSI Wafer cleaning techniques
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 57 |
Majority and minority carrier lifetime in MOS structures
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 58 |
Measurement of the solderability of thick-film circuits: relationship between solder strength and a solderability test
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 59 |
Measurements of the electrical impurity profile of implanted ions, using the pulsed MOS C-V technique
|
|
|
1976
|
15 |
2 |
p. 111-
1 p.
|
artikel
|
| 60 |
Memory traps in MNOS diodes measured by thermally stimulated current
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 61 |
Microwave radio equipment for highly-reliable digital communication system
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 62 |
Miniband parameters of semiconductor superlattices
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 63 |
Mixed conduction in Cr-doped GaAs
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 64 |
New wafer alignment technique
|
Fredriksen, T.Roland
|
|
1976
|
15 |
2 |
p. 147-151
5 p.
|
artikel
|
| 65 |
Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effect
|
|
|
1976
|
15 |
2 |
p. 109-
1 p.
|
artikel
|
| 66 |
On nonequilibrium C-V characteristics of MOS inversion region
|
|
|
1976
|
15 |
2 |
p. 109-
1 p.
|
artikel
|
| 67 |
On standby redundancy with delayed repair
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 68 |
Pitfalls in contracting for reliability
|
|
|
1976
|
15 |
2 |
p. 101-
1 p.
|
artikel
|
| 69 |
Properties of Mn-ion implanted p-n junctions in n-type GaAs
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 70 |
Publications, notices, calls for papers etc
|
|
|
1976
|
15 |
2 |
p. 95-97
3 p.
|
artikel
|
| 71 |
Reliability calculation of redundant systems with non-identical units
|
Balagurusamy, E.
|
|
1976
|
15 |
2 |
p. 135-138
4 p.
|
artikel
|
| 72 |
Reliability modeling algorithms for a class of large repairable systems
|
Singh, C.
|
|
1976
|
15 |
2 |
p. 159-162
4 p.
|
artikel
|
| 73 |
Rhodium and iridium as deep impurities in silicon
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 74 |
Space-charge effect on excess carrier transport in semiconductors
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 75 |
Stabilization of wearout-replacement rate
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 76 |
Substrate-attach epoxies
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 77 |
Substrate effects on the cyclotron resonance in surface layers of silicon
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 78 |
Tangential momentum accommodation on smooth gold and silver thin-film surfaces
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 79 |
Tape automated bonding moving into production
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 80 |
Techniques of adjusting thin- and thick-film resistors in hybrid microelectronic circuits
|
Singh, Awatar
|
|
1976
|
15 |
2 |
p. 123-129
7 p.
|
artikel
|
| 81 |
The characteristics and applications of a V-shaped notched-channel field-effect transistor (VFET)
|
|
|
1976
|
15 |
2 |
p. 104-105
2 p.
|
artikel
|
| 82 |
The concepts of reference circuit and reliability distribution in the international telephone network
|
|
|
1976
|
15 |
2 |
p. 103-
1 p.
|
artikel
|
| 83 |
The effect of spatially varying diffusion constant on the transient decay of short circuit current in electron irradiated p-n junctions
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 84 |
The effects of carrier accumulation at the cathode on the negative resistance induced by avalanche injection in Si bulk devices
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 85 |
The effects of impurity redistribution on the subthreshold leakage current in CMOS n-channel transistors
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 86 |
The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminium and phosphorus implanted silicon on sapphire
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
| 87 |
The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
|
|
|
1976
|
15 |
2 |
p. 108-
1 p.
|
artikel
|
| 88 |
The element is the heart of a diffusion furnace
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 89 |
The Engineering of Microelectronic Thin and Thick Films
|
G.W.A.D.,
|
|
1976
|
15 |
2 |
p. 99-
1 p.
|
artikel
|
| 90 |
The gettering of boron by an ion-implanted antimony layer in silicon
|
|
|
1976
|
15 |
2 |
p. 111-
1 p.
|
artikel
|
| 91 |
The high temperature deformation properties of gold and thermocompression bonding
|
|
|
1976
|
15 |
2 |
p. 104-
1 p.
|
artikel
|
| 92 |
The influence of facet formation on the life of incandescent lamps
|
|
|
1976
|
15 |
2 |
p. 102-
1 p.
|
artikel
|
| 93 |
Theoretical analysis of the influence of an l-h junction on operation of semiconductor devices
|
|
|
1976
|
15 |
2 |
p. 107-
1 p.
|
artikel
|
| 94 |
Thin-film evaporation using the hot leading channel method
|
|
|
1976
|
15 |
2 |
p. 109-
1 p.
|
artikel
|
| 95 |
Threshold voltage shift of MOS transistors by ion implantation
|
|
|
1976
|
15 |
2 |
p. 110-
1 p.
|
artikel
|
| 96 |
V-groove (VMOS) conductively connected charge coupled devices
|
|
|
1976
|
15 |
2 |
p. 106-
1 p.
|
artikel
|
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