nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A bonding-wire failure mode in plastic encaponlated integrated circuits
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1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
2 |
A current pulse screening test for metal step coverage
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
3 |
Analysis of electrical overstress failures
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1973 |
12 |
6 |
p. 491- 1 p. |
artikel |
4 |
Analysis of integrated circuit failure modes and failure mechanisms derived from high temperature operating life tests
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1973 |
12 |
6 |
p. 495- 1 p. |
artikel |
5 |
An elusive open-circuit failure mode in thin-film chip resistors
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1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
6 |
A new complementary bipolar transistor structure
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
7 |
A new static shift register with dynamic transfer
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
8 |
A see-saw IC logic astable oscillator
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
9 |
Auto-Auto Relay Set controlled by LSI Programmable Logic
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
10 |
Avalanche breakdown characteristics of alloyed silicon p-n junctions
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1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
11 |
Avalanche breakdown in polycrystalline silicon films
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1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
12 |
Avalanche breakdown voltage of diffused junctions in silicon
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
13 |
Bell Labs' new thin-film hybrid may be most complex ever built
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1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
14 |
Bonding degradation in the tantalum nitride-chromium-gold metallization system
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1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
15 |
Building reliability into reed switches
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1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
16 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
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1973 |
12 |
6 |
p. 485-486 2 p. |
artikel |
17 |
Carrier heating effects in junctions at very low currents
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
18 |
Chopper circuit put on op-amp chip
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
19 |
Chopper-stabilized IC op amps achieve precision, speed, economy
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
20 |
C-MOS may help majority logic win designers' vote
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1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
21 |
Component linearity test improves reliability screening through measurement of third harmonic index
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1973 |
12 |
6 |
p. 491- 1 p. |
artikel |
22 |
Computers help design reliable telephone systems
|
Gambrill, L.M. |
|
1973 |
12 |
6 |
p. 505-511 7 p. |
artikel |
23 |
Contact failures of crossbar switching system
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|
1973 |
12 |
6 |
p. 496-497 2 p. |
artikel |
24 |
Determination of neutral region carrier concentrations in P-N junctions using quasi fermi levels
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
25 |
Discussion about the number of wiring layers for logic LSL
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1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
26 |
Dissolution rates and reliability effects of Au, Ag, Ni and Cu in lead base solders
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1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
27 |
Distributed mosfet amplifier using Microstrip
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1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
28 |
Effect of ionizing radiation on second breakdown
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1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
29 |
Electromigration studies on aluminium-copper stripes
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1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
30 |
Electron beam fabrication
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1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
31 |
Expected value and variance of failure time in redundant systems
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1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
32 |
Fabrication techniques and screening procedures for high reliability transferred electron diodes
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|
1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
33 |
Failure analysis applications of anger electron spectroscopy
|
|
|
1973 |
12 |
6 |
p. 491-492 2 p. |
artikel |
34 |
Failure analysis applications of the scanning electron microscope
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|
1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
35 |
Failure analysis of oxide defects
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|
1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
36 |
Failure analysis of surface inversion
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1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
37 |
Failure analysis of wire bonds
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1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
38 |
Failure analysis using the electron microprobe
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|
1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
39 |
Failure analysis using the ion microprobe
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|
1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
40 |
For the real cost of a design, factor in reliability
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1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
41 |
Further studies on the reliability of thin-film nickel-chromium resistors
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|
1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
42 |
Highly reliable mesh emitter transistor
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1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
43 |
High-reliability plastic package for integrated circuits
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1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
44 |
High speed positioning
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1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
45 |
Hybrids for microwave gear get boost from thick-film technology
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|
1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
46 |
Hybrid technology solves tough design problems
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|
1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
47 |
IBM reliability experience with hybrid microcircuits
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|
1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
48 |
ICs blow the whistle on faults
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1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
49 |
Improved reliability of electron devices through optimized of coverage of surface topography
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|
1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
50 |
Influence of surface treatment of silicon on the effective impurity charge density in surface states of MOS structures
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|
1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
51 |
Intermetallic characterization
|
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|
1973 |
12 |
6 |
p. 498-499 2 p. |
artikel |
52 |
Investigation of radiation-induced defects in silicon p-n junctions
|
|
|
1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
53 |
Japanese IC metallization method halled as reliability ‘breakthrough’
|
|
|
1973 |
12 |
6 |
p. 497-498 2 p. |
artikel |
54 |
Laplace transforms for the two-unit cold-standby redundant system
|
|
|
1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
55 |
Maintenance, replacement and reliability
|
G.W.A.D., |
|
1973 |
12 |
6 |
p. 503- 1 p. |
artikel |
56 |
Median-time-to-failure (MTF) of microwave power transistors under RF conditions
|
|
|
1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
57 |
Microwave integrated circuits using thick- and thin-film technologies
|
|
|
1973 |
12 |
6 |
p. 501-502 2 p. |
artikel |
58 |
Minicomputer controls evaluation of epitaxial deposition for ICs
|
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|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
59 |
MOS/LSI failure analysis techniques
|
|
|
1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
60 |
Multivariate analysis techniques applied to equipment testing
|
Wilburn Jr., J.B. |
|
1973 |
12 |
6 |
p. 535-538 4 p. |
artikel |
61 |
Noncontact testing of interconnections in film integrated circuits using an electron beam
|
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|
1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
62 |
Notice
|
|
|
1973 |
12 |
6 |
p. 487- 1 p. |
artikel |
63 |
Notices and calls for papers
|
|
|
1973 |
12 |
6 |
p. 489- 1 p. |
artikel |
64 |
On measuring the mechanical properties of aluminum metallization and their relationship to reliability problems
|
|
|
1973 |
12 |
6 |
p. 493-494 2 p. |
artikel |
65 |
Operational performance of computing systems
|
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|
1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
66 |
Optimixing serpentime resistor geometry
|
|
|
1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
67 |
Papers to be published in future issues
|
|
|
1973 |
12 |
6 |
p. 504- 1 p. |
artikel |
68 |
Photo-composition and LSI
|
|
|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
69 |
Photomask array placement on slices in LSI processing
|
Tasch Jr., A.F. |
|
1973 |
12 |
6 |
p. 539-545 7 p. |
artikel |
70 |
Photoresists part 2—Negative resist systems
|
|
|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
71 |
Photoresists part 3—Positive resist systems
|
|
|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
72 |
Power-system reliability calculations
|
G.W.A.D., |
|
1973 |
12 |
6 |
p. 503- 1 p. |
artikel |
73 |
Projection mask alignment—A production technique
|
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|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
74 |
Properties of iron oxide films for photomask applications
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|
1973 |
12 |
6 |
p. 498- 1 p. |
artikel |
75 |
Qualitatsprufung und Fehleranalysen an Banelementen
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|
1973 |
12 |
6 |
p. 492-493 2 p. |
artikel |
76 |
Reliability analysis of a nuclear reactor fuel charging system
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|
|
1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
77 |
Reliability analysis of a system with dependent units
|
Gopalan, M.N. |
|
1973 |
12 |
6 |
p. 547- 1 p. |
artikel |
78 |
Reliability improvement by redundancy in electronics systems 3A quantitative comparisen of redundancy schemes
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1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
79 |
Reliability improvements in electron bombarded semiconductor power devices
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|
|
1973 |
12 |
6 |
p. 495- 1 p. |
artikel |
80 |
Reliability improvements of plastic semiconductors using gold metallization
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|
|
1973 |
12 |
6 |
p. 495- 1 p. |
artikel |
81 |
Reliability of conductors and crossovers for film integrated circuits
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|
|
1973 |
12 |
6 |
p. 495- 1 p. |
artikel |
82 |
Series equivalent circuit representation of SiO2-Si interface and oxide trap states
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
83 |
Simulation of a complex microelectronic module containing analogue and digital elements
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|
|
1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
84 |
Small-signal characteristics of semiconductor punch-through injection and transit-time diedes
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1973 |
12 |
6 |
p. 500- 1 p. |
artikel |
85 |
Some preliminary studies of the structure of ion bornbarded thin films
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|
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1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
86 |
Special Report—Semiconductor memories are taking over data-storage applications
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|
|
1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
87 |
Stability of thick-film resistors under high electromagnetic stress
|
|
|
1973 |
12 |
6 |
p. 502- 1 p. |
artikel |
88 |
Temperature-humidity acceleration of metal-electrolysis failure in semiconductor devices
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|
|
1973 |
12 |
6 |
p. 495- 1 p. |
artikel |
89 |
The effect of retarding field on the base transport characteristics of planar transistors
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|
|
1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
90 |
The problems of reliability growth and demonstration with military electronics
|
Green, J.E. |
|
1973 |
12 |
6 |
p. 513-520 8 p. |
artikel |
91 |
The reliability of failure rates
|
Van Diest, H.G. |
|
1973 |
12 |
6 |
p. 521-524 4 p. |
artikel |
92 |
The reliability of independent exponential series systems—A bayesian approach. Technical report
|
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1973 |
12 |
6 |
p. 496- 1 p. |
artikel |
93 |
Thermal behavior of thick-film
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1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
94 |
Thermal study of circuit card assembly
|
Watson, D. |
|
1973 |
12 |
6 |
p. 531-534 4 p. |
artikel |
95 |
The solid tantalum capacitor—A “solid” contributor to reliability
|
|
|
1973 |
12 |
6 |
p. 494- 1 p. |
artikel |
96 |
Thick film pastes for multilayer use
|
|
|
1973 |
12 |
6 |
p. 501- 1 p. |
artikel |
97 |
To-5 discoloration and bondability
|
|
|
1973 |
12 |
6 |
p. 493- 1 p. |
artikel |
98 |
Torque and thermal cycling as methods of testing reliability of reflow-soldered chip-to-substrate joints
|
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|
1973 |
12 |
6 |
p. 494-495 2 p. |
artikel |
99 |
Transistor base-emitter junction protection improves reliability
|
|
|
1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
100 |
Unconventional uses for IC timers can be found everywhere. Build anything from car tachometers to program controllers with these simple devices
|
|
|
1973 |
12 |
6 |
p. 499- 1 p. |
artikel |
101 |
Unusual filter concept promises high-Q, low-frequency IC device
|
|
|
1973 |
12 |
6 |
p. 497- 1 p. |
artikel |
102 |
Use of a pulse laser technique in failure analysis
|
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|
1973 |
12 |
6 |
p. 492- 1 p. |
artikel |
103 |
Who wants reliable plastic semiconductors
|
|
|
1973 |
12 |
6 |
p. 495-496 2 p. |
artikel |
104 |
Why specifications—What do they assure
|
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1973 |
12 |
6 |
p. 491- 1 p. |
artikel |
105 |
Wire-bond reliability in hybrid microcircuits
|
|
|
1973 |
12 |
6 |
p. 495- 1 p. |
artikel |