| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for dynamic avalanche onset of planar IGBTs
|
Yang, Wuhua
|
|
|
115 |
C |
p.
|
artikel
|
| 2 |
An efficient strategy for the development of software test libraries for an automotive microcontroller family
|
Piumatti, D.
|
|
|
115 |
C |
p.
|
artikel
|
| 3 |
A numerical study on the effect of the fixation methods on the vibration fatigue of electronic packages
|
Gharaibeh, Mohammad A.
|
|
|
115 |
C |
p.
|
artikel
|
| 4 |
Automated defect detection of insulated gate bipolar transistor based on computed laminography imaging
|
Li, Yan
|
|
|
115 |
C |
p.
|
artikel
|
| 5 |
Base solder voids identification of IGBT modules using case temperature
|
Fan, Yuhui
|
|
|
115 |
C |
p.
|
artikel
|
| 6 |
CHARM facility remotely controlled platform at CERN: A new fault-tolerant redundant architecture
|
Toscani, A.
|
|
|
115 |
C |
p.
|
artikel
|
| 7 |
Discharge current analysis with charged connector pins
|
Tamminen, Pasi
|
|
|
115 |
C |
p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
|
115 |
C |
p.
|
artikel
|
| 9 |
Experimental characterization of rolled annealed copper film used in flexible printed circuit boards: Identification of the elastic-plastic and low-cycle fatigue behaviors
|
Girard, Gautier
|
|
|
115 |
C |
p.
|
artikel
|
| 10 |
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
|
Putcha, Vamsi
|
|
|
115 |
C |
p.
|
artikel
|
| 11 |
Influence of microstructure inhomogeneity on the current density and temperature gradient in microscale line-type Sn58Bi solder joints under current stressing
|
Qin, Hongbo
|
|
|
115 |
C |
p.
|
artikel
|
| 12 |
Soft errors in DNN accelerators: A comprehensive review
|
Ibrahim, Younis
|
|
|
115 |
C |
p.
|
artikel
|
| 13 |
Study on the relationship between Cu protrusion behavior and stresses evolution in the through-silicon via characterized by in-situ μ-Raman spectroscopy
|
Dong, Mengya
|
|
|
115 |
C |
p.
|
artikel
|
| 14 |
The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation
|
Ahmeda, K.
|
|
|
115 |
C |
p.
|
artikel
|
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