nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
About long-term effects of hot-carrier stress on n-MOSFETS
|
Stadlober, Barbara |
|
2000 |
100-101 |
8-10 |
p. 1485-1490 6 p. |
artikel |
2 |
Acceleration method for gate-disturb degradation on embedded flash EEPROM
|
Wada, Tetsuaki |
|
2000 |
100-101 |
8-10 |
p. 1279-1283 5 p. |
artikel |
3 |
A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics
|
McPherson, J.W. |
|
2000 |
100-101 |
8-10 |
p. 1591-1597 7 p. |
artikel |
4 |
A method for HBT process control and defect detection using pulsed electrical stress
|
Sydlo, C. |
|
2000 |
100-101 |
8-10 |
p. 1449-1453 5 p. |
artikel |
5 |
A method to minimize test time for accelerated ageing of pHEMT's by analysis of the electronic fingerprint of the initial stage of degradation
|
Petersen, R. |
|
2000 |
100-101 |
8-10 |
p. 1721-1726 6 p. |
artikel |
6 |
A modelling approach to assess the creep behaviour of large-area solder joints
|
Poech, M.H. |
|
2000 |
100-101 |
8-10 |
p. 1653-1658 6 p. |
artikel |
7 |
Analysis of high-power devices using proton beam induced currents
|
Zmeck, M. |
|
2000 |
100-101 |
8-10 |
p. 1413-1418 6 p. |
artikel |
8 |
Annealing behavior of gate oxide leakage current after quasi-breakdown
|
Xu, Zhen |
|
2000 |
100-101 |
8-10 |
p. 1341-1346 6 p. |
artikel |
9 |
Application of analytical TEM for failure analysis of semiconductor device structures
|
Engelmann, H.J. |
|
2000 |
100-101 |
8-10 |
p. 1747-1751 5 p. |
artikel |
10 |
A review of sample backside preparation techniques for VLSI
|
Perdu, P. |
|
2000 |
100-101 |
8-10 |
p. 1431-1436 6 p. |
artikel |
11 |
A simple model for the mode I popcorn effect for IC packages
|
Alpern, P. |
|
2000 |
100-101 |
8-10 |
p. 1503-1508 6 p. |
artikel |
12 |
Assessment of copper contamination impact on inter-level dielectric reliability performed with time-dependent-dielectric-breakdown tests
|
Gonella, R. |
|
2000 |
100-101 |
8-10 |
p. 1305-1309 5 p. |
artikel |
13 |
Author index
|
|
|
2000 |
100-101 |
8-10 |
p. I-III nvt p. |
artikel |
14 |
Automatic EB fault-tracing system using fuzzy-logic approach
|
Miura, K. |
|
2000 |
100-101 |
8-10 |
p. 1377-1382 6 p. |
artikel |
15 |
Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices
|
Soelkner, Gerald |
|
2000 |
100-101 |
8-10 |
p. 1641-1645 5 p. |
artikel |
16 |
Bulk and surface degradation mode in 0.35μm technology gg-nMOS ESD protection devices
|
Pogany, D |
|
2000 |
100-101 |
8-10 |
p. 1467-1472 6 p. |
artikel |
17 |
Calculation of the optimal FIB milling and deposition operations for easier and faster circuit reconfiguration
|
Desplats, Romain |
|
2000 |
100-101 |
8-10 |
p. 1759-1764 6 p. |
artikel |
18 |
CALYPSO — Critical Area, Lifetime, and Yield Predicting Software
|
Miskowiec, P. |
|
2000 |
100-101 |
8-10 |
p. 1629-1634 6 p. |
artikel |
19 |
Comparison of RF and DC life-test effects on GaAs power MESFETs
|
Lambert, B. |
|
2000 |
100-101 |
8-10 |
p. 1727-1731 5 p. |
artikel |
20 |
Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device
|
Heiderhoff, R. |
|
2000 |
100-101 |
8-10 |
p. 1383-1388 6 p. |
artikel |
21 |
Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting lines
|
Behnke, U. |
|
2000 |
100-101 |
8-10 |
p. 1401-1406 6 p. |
artikel |
22 |
3-D analysis of the breakdown localised defects of ACSTM through a triac study
|
Forster, S. |
|
2000 |
100-101 |
8-10 |
p. 1695-1700 6 p. |
artikel |
23 |
Data retention prediction for modern floating gate non-volatile memories
|
Tao, G |
|
2000 |
100-101 |
8-10 |
p. 1561-1566 6 p. |
artikel |
24 |
Design for reliability
|
Minehane, S. |
|
2000 |
100-101 |
8-10 |
p. 1285-1294 10 p. |
artikel |
25 |
Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
|
Zan, H.W. |
|
2000 |
100-101 |
8-10 |
p. 1479-1483 5 p. |
artikel |
26 |
Does short wavelength lithography process degrade the integrity of thin gate oxide?
|
Kim, S.J. |
|
2000 |
100-101 |
8-10 |
p. 1609-1613 5 p. |
artikel |
27 |
Editorial
|
Balk, L.J. |
|
2000 |
100-101 |
8-10 |
p. ix- 1 p. |
artikel |
28 |
Effects of test sequences on the degradation analysis in high speed connectors
|
Catelani, M. |
|
2000 |
100-101 |
8-10 |
p. 1461-1465 5 p. |
artikel |
29 |
Electrochemical wet etching in KOH:H20 solution and secondary/ion image passive voltage contrast as a complementary technique in failure analysis
|
Oh Chong Khiam, |
|
2000 |
100-101 |
8-10 |
p. 1455-1459 5 p. |
artikel |
30 |
Electromigration characterization of damascene copper interconnects using normally and highly accelerated tests
|
Berger, T. |
|
2000 |
100-101 |
8-10 |
p. 1311-1316 6 p. |
artikel |
31 |
Establishment of derating rules and end of life drifts figures for electronic components
|
Cosqueric, L. |
|
2000 |
100-101 |
8-10 |
p. 1273-1278 6 p. |
artikel |
32 |
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation
|
Kuchenbecker, J |
|
2000 |
100-101 |
8-10 |
p. 1579-1584 6 p. |
artikel |
33 |
Evaluation of the thermal resistance of AlCu electromigration test structures
|
Braghieri, A. |
|
2000 |
100-101 |
8-10 |
p. 1317-1322 6 p. |
artikel |
34 |
Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A–3300V module with AlSiC base plate
|
Coquery, G. |
|
2000 |
100-101 |
8-10 |
p. 1665-1670 6 p. |
artikel |
35 |
Faster fault isolation using a dichotomy reduction of node candidates
|
Desplats, Romain |
|
2000 |
100-101 |
8-10 |
p. 1419-1424 6 p. |
artikel |
36 |
Flip chips and acoustic micro imaging: An overview of past applications, present status, and roadmap for the future
|
Semmens, Janet E. |
|
2000 |
100-101 |
8-10 |
p. 1539-1543 5 p. |
artikel |
37 |
Impact of ESD-induced soft drain junction damage on CMOS product lifetime
|
Reiner, Joachim C. |
|
2000 |
100-101 |
8-10 |
p. 1619-1628 10 p. |
artikel |
38 |
Impact of process steps on electrical and electromigration performances of copper interconnects in damascene architecture
|
Gonella, R. |
|
2000 |
100-101 |
8-10 |
p. 1329-1334 6 p. |
artikel |
39 |
Influence of fluorine contamination on reliability of thin gate oxides
|
Krüger, D. |
|
2000 |
100-101 |
8-10 |
p. 1335-1340 6 p. |
artikel |
40 |
In-situ sem observation of electromigration in thin metal films at accelerated stress conditions
|
d'Haen, J. |
|
2000 |
100-101 |
8-10 |
p. 1407-1412 6 p. |
artikel |
41 |
Laser cross section measurement for the evaluation of single-event effects in integrated circuits
|
Pouget, V. |
|
2000 |
100-101 |
8-10 |
p. 1371-1375 5 p. |
artikel |
42 |
Low-field latent plasma damage depassivation in thin-oxide MOS
|
Cellere, G. |
|
2000 |
100-101 |
8-10 |
p. 1347-1352 6 p. |
artikel |
43 |
Low frequency noise evolution during lifetime tests of lines and vias subjected to electromigration
|
Dattilo, V. |
|
2000 |
100-101 |
8-10 |
p. 1323-1327 5 p. |
artikel |
44 |
Measurement of the thermomechanical strain of electronic devices by shearography
|
Dilhaire, S. |
|
2000 |
100-101 |
8-10 |
p. 1509-1514 6 p. |
artikel |
45 |
Model and design rules for eliminating surface potential induced failures in high voltage integrated circuits
|
van der Pol, Jacob A. |
|
2000 |
100-101 |
8-10 |
p. 1267-1272 6 p. |
artikel |
46 |
Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions
|
Schüβler, M. |
|
2000 |
100-101 |
8-10 |
p. 1733-1738 6 p. |
artikel |
47 |
Modeling the conduction characteristics of broken down gate oxides in MOS structures
|
Mirand, E. |
|
2000 |
100-101 |
8-10 |
p. 1599-1603 5 p. |
artikel |
48 |
MOS transistor reliability under analog operation
|
Thewes, R. |
|
2000 |
100-101 |
8-10 |
p. 1545-1554 10 p. |
artikel |
49 |
New FIB/TEM evidence for a REDR mechanism in sudden failures of 980 nm SL SQW InGaAs/AlGaAs pump laser diodes
|
Vanzi, M. |
|
2000 |
100-101 |
8-10 |
p. 1753-1757 5 p. |
artikel |
50 |
New non-destructive laser ablation based backside sample preparation method
|
Beaudoin, F |
|
2000 |
100-101 |
8-10 |
p. 1425-1429 5 p. |
artikel |
51 |
Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method
|
Galy, P. |
|
2000 |
100-101 |
8-10 |
p. 1473-1477 5 p. |
artikel |
52 |
Overstress and electrostatic discharge in CMOS and BCD integrated circuits
|
Meneghesso, G. |
|
2000 |
100-101 |
8-10 |
p. 1739-1746 8 p. |
artikel |
53 |
Packaging of CMOS MEMS
|
Baltes, Henry |
|
2000 |
100-101 |
8-10 |
p. 1255-1262 8 p. |
artikel |
54 |
Parasitic effects and long term stability of InP-based HEMTs
|
Meneghesso, G. |
|
2000 |
100-101 |
8-10 |
p. 1715-1720 6 p. |
artikel |
55 |
PICA: Backside failure analysis of CMOS circuits using Picosecond Imaging Circuit Analysis
|
Mc Manus, M.K. |
|
2000 |
100-101 |
8-10 |
p. 1353-1358 6 p. |
artikel |
56 |
Principle and application of a bifunctional laser linking and cutting structure for microelectronic circuits in standard CMOS-technology
|
Mende, Ole |
|
2000 |
100-101 |
8-10 |
p. 1437-1442 6 p. |
artikel |
57 |
Quantification of scanning capacitance microscopy measurements for 2D dopant profiling
|
Malberti, P. |
|
2000 |
100-101 |
8-10 |
p. 1395-1399 5 p. |
artikel |
58 |
Relation between robustness against ESD and against flash events in deflection amplifiers
|
van Roijen, R. |
|
2000 |
100-101 |
8-10 |
p. 1263-1266 4 p. |
artikel |
59 |
Relationship between microstructure and electromigration damage in unpassivated PVD copper damascene interconnects
|
Koetter, T.G. |
|
2000 |
100-101 |
8-10 |
p. 1295-1299 5 p. |
artikel |
60 |
Reliability and stability of GaAs-based pseudomorphic quantum wells for high-precision power metering
|
Haddab, Y. |
|
2000 |
100-101 |
8-10 |
p. 1443-1447 5 p. |
artikel |
61 |
Reliability aspects of high temperature power MOSFETs
|
Manca, J.V. |
|
2000 |
100-101 |
8-10 |
p. 1679-1682 4 p. |
artikel |
62 |
Reliability model for Al wire bonds subjected to heel crack failures
|
Ramminger, S. |
|
2000 |
100-101 |
8-10 |
p. 1521-1525 5 p. |
artikel |
63 |
Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
|
Würfl, J. |
|
2000 |
100-101 |
8-10 |
p. 1689-1693 5 p. |
artikel |
64 |
Reliability of flip chip and chip size packages
|
Reichl, H. |
|
2000 |
100-101 |
8-10 |
p. 1243-1254 12 p. |
artikel |
65 |
Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer
|
Dammann, M. |
|
2000 |
100-101 |
8-10 |
p. 1709-1713 5 p. |
artikel |
66 |
Reliability of optoelectronic components for telecommunications
|
Sauvage, D. |
|
2000 |
100-101 |
8-10 |
p. 1701-1708 8 p. |
artikel |
67 |
Reliability of passivated p-type polycrystalline silicon thin film transistors
|
Peng, D.Z. |
|
2000 |
100-101 |
8-10 |
p. 1491-1495 5 p. |
artikel |
68 |
Reliability testing of high-power multi-chip IGBT modules
|
Lefranc, G. |
|
2000 |
100-101 |
8-10 |
p. 1659-1663 5 p. |
artikel |
69 |
Reliable use of commercial technology in high temperature environments
|
McCluskey, Patrick |
|
2000 |
100-101 |
8-10 |
p. 1671-1678 8 p. |
artikel |
70 |
Room temperature grain growth in electroplated copper thin films
|
Wendrock, H. |
|
2000 |
100-101 |
8-10 |
p. 1301-1304 4 p. |
artikel |
71 |
RTS noise in submicron SiGe epitaxial base bipolar transistors
|
Militaru, L. |
|
2000 |
100-101 |
8-10 |
p. 1585-1590 6 p. |
artikel |
72 |
Shot noise partial suppression in the SILO regime
|
Crupi, F. |
|
2000 |
100-101 |
8-10 |
p. 1605-1608 4 p. |
artikel |
73 |
Stability of polysilicon thin film transistors under switch operating
|
Toutah, H. |
|
2000 |
100-101 |
8-10 |
p. 1573-1577 5 p. |
artikel |
74 |
Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry
|
Litzenberger, M. |
|
2000 |
100-101 |
8-10 |
p. 1359-1364 6 p. |
artikel |
75 |
Surface oxide films on Aluminum bondpads: Influence on thermosonic wire bonding behavior and hardness
|
Petzold, M. |
|
2000 |
100-101 |
8-10 |
p. 1515-1520 6 p. |
artikel |
76 |
Technique for determining a prudent voltage stress to improve product quality and reliability
|
Blish II, Richard C. |
|
2000 |
100-101 |
8-10 |
p. 1615-1618 4 p. |
artikel |
77 |
The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM
|
Hong, Sung H. |
|
2000 |
100-101 |
8-10 |
p. 1555-1560 6 p. |
artikel |
78 |
Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique
|
Fürböck, C. |
|
2000 |
100-101 |
8-10 |
p. 1365-1370 6 p. |
artikel |
79 |
Thermal fatigue and metallurgical reactions in solder joints of LTCC modules
|
Rautioaho, R. |
|
2000 |
100-101 |
8-10 |
p. 1527-1532 6 p. |
artikel |
80 |
Thermal stability of laser welded thermocouple contacts to Si for high temperature thermal sensor application
|
Ernst, H. |
|
2000 |
100-101 |
8-10 |
p. 1683-1688 6 p. |
artikel |
81 |
The role of spreading resistance profiling in manufacturing control and technology development
|
Lin-Kwang, J. |
|
2000 |
100-101 |
8-10 |
p. 1497-1502 6 p. |
artikel |
82 |
Transconductance increase due to charge trapping during hot-carrier stress of nMOSFETs
|
Rafí, J.M. |
|
2000 |
100-101 |
8-10 |
p. 1567-1572 6 p. |
artikel |
83 |
Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60Co irradiation
|
Picard, C. |
|
2000 |
100-101 |
8-10 |
p. 1647-1652 6 p. |
artikel |
84 |
Vertical die crack stresses of Flip Chip induced in major package assembly processes
|
Yang, D.G. |
|
2000 |
100-101 |
8-10 |
p. 1533-1538 6 p. |
artikel |
85 |
Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopy
|
Weber, R. |
|
2000 |
100-101 |
8-10 |
p. 1389-1394 6 p. |
artikel |
86 |
X-ray structure characterization of barriers for Cu metallization
|
Mattern, N. |
|
2000 |
100-101 |
8-10 |
p. 1765-1770 6 p. |
artikel |
87 |
Yield and reliability analysis of digital standard cells with resistive defects
|
Huber, M. |
|
2000 |
100-101 |
8-10 |
p. 1635-1640 6 p. |
artikel |