| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
About long-term effects of hot-carrier stress on n-MOSFETS
|
Stadlober, Barbara
|
|
2000
|
|
8-10 |
p. 1485-1490
6 p.
|
artikel
|
| 2 |
Acceleration method for gate-disturb degradation on embedded flash EEPROM
|
Wada, Tetsuaki
|
|
2000
|
|
8-10 |
p. 1279-1283
5 p.
|
artikel
|
| 3 |
A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics
|
McPherson, J.W.
|
|
2000
|
|
8-10 |
p. 1591-1597
7 p.
|
artikel
|
| 4 |
A method for HBT process control and defect detection using pulsed electrical stress
|
Sydlo, C.
|
|
2000
|
|
8-10 |
p. 1449-1453
5 p.
|
artikel
|
| 5 |
A method to minimize test time for accelerated ageing of pHEMT's by analysis of the electronic fingerprint of the initial stage of degradation
|
Petersen, R.
|
|
2000
|
|
8-10 |
p. 1721-1726
6 p.
|
artikel
|
| 6 |
A modelling approach to assess the creep behaviour of large-area solder joints
|
Poech, M.H.
|
|
2000
|
|
8-10 |
p. 1653-1658
6 p.
|
artikel
|
| 7 |
Analysis of high-power devices using proton beam induced currents
|
Zmeck, M.
|
|
2000
|
|
8-10 |
p. 1413-1418
6 p.
|
artikel
|
| 8 |
Annealing behavior of gate oxide leakage current after quasi-breakdown
|
Xu, Zhen
|
|
2000
|
|
8-10 |
p. 1341-1346
6 p.
|
artikel
|
| 9 |
Application of analytical TEM for failure analysis of semiconductor device structures
|
Engelmann, H.J.
|
|
2000
|
|
8-10 |
p. 1747-1751
5 p.
|
artikel
|
| 10 |
A review of sample backside preparation techniques for VLSI
|
Perdu, P.
|
|
2000
|
|
8-10 |
p. 1431-1436
6 p.
|
artikel
|
| 11 |
A simple model for the mode I popcorn effect for IC packages
|
Alpern, P.
|
|
2000
|
|
8-10 |
p. 1503-1508
6 p.
|
artikel
|
| 12 |
Assessment of copper contamination impact on inter-level dielectric reliability performed with time-dependent-dielectric-breakdown tests
|
Gonella, R.
|
|
2000
|
|
8-10 |
p. 1305-1309
5 p.
|
artikel
|
| 13 |
Author index
|
|
|
2000
|
|
8-10 |
p. I-III
nvt p.
|
artikel
|
| 14 |
Automatic EB fault-tracing system using fuzzy-logic approach
|
Miura, K.
|
|
2000
|
|
8-10 |
p. 1377-1382
6 p.
|
artikel
|
| 15 |
Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices
|
Soelkner, Gerald
|
|
2000
|
|
8-10 |
p. 1641-1645
5 p.
|
artikel
|
| 16 |
Bulk and surface degradation mode in 0.35μm technology gg-nMOS ESD protection devices
|
Pogany, D
|
|
2000
|
|
8-10 |
p. 1467-1472
6 p.
|
artikel
|
| 17 |
Calculation of the optimal FIB milling and deposition operations for easier and faster circuit reconfiguration
|
Desplats, Romain
|
|
2000
|
|
8-10 |
p. 1759-1764
6 p.
|
artikel
|
| 18 |
CALYPSO — Critical Area, Lifetime, and Yield Predicting Software
|
Miskowiec, P.
|
|
2000
|
|
8-10 |
p. 1629-1634
6 p.
|
artikel
|
| 19 |
Comparison of RF and DC life-test effects on GaAs power MESFETs
|
Lambert, B.
|
|
2000
|
|
8-10 |
p. 1727-1731
5 p.
|
artikel
|
| 20 |
Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device
|
Heiderhoff, R.
|
|
2000
|
|
8-10 |
p. 1383-1388
6 p.
|
artikel
|
| 21 |
Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting lines
|
Behnke, U.
|
|
2000
|
|
8-10 |
p. 1401-1406
6 p.
|
artikel
|
| 22 |
3-D analysis of the breakdown localised defects of ACSTM through a triac study
|
Forster, S.
|
|
2000
|
|
8-10 |
p. 1695-1700
6 p.
|
artikel
|
| 23 |
Data retention prediction for modern floating gate non-volatile memories
|
Tao, G
|
|
2000
|
|
8-10 |
p. 1561-1566
6 p.
|
artikel
|
| 24 |
Design for reliability
|
Minehane, S.
|
|
2000
|
|
8-10 |
p. 1285-1294
10 p.
|
artikel
|
| 25 |
Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
|
Zan, H.W.
|
|
2000
|
|
8-10 |
p. 1479-1483
5 p.
|
artikel
|
| 26 |
Does short wavelength lithography process degrade the integrity of thin gate oxide?
|
Kim, S.J.
|
|
2000
|
|
8-10 |
p. 1609-1613
5 p.
|
artikel
|
| 27 |
Editorial
|
Balk, L.J.
|
|
2000
|
|
8-10 |
p. ix-
1 p.
|
artikel
|
| 28 |
Effects of test sequences on the degradation analysis in high speed connectors
|
Catelani, M.
|
|
2000
|
|
8-10 |
p. 1461-1465
5 p.
|
artikel
|
| 29 |
Electrochemical wet etching in KOH:H20 solution and secondary/ion image passive voltage contrast as a complementary technique in failure analysis
|
Oh Chong Khiam,
|
|
2000
|
|
8-10 |
p. 1455-1459
5 p.
|
artikel
|
| 30 |
Electromigration characterization of damascene copper interconnects using normally and highly accelerated tests
|
Berger, T.
|
|
2000
|
|
8-10 |
p. 1311-1316
6 p.
|
artikel
|
| 31 |
Establishment of derating rules and end of life drifts figures for electronic components
|
Cosqueric, L.
|
|
2000
|
|
8-10 |
p. 1273-1278
6 p.
|
artikel
|
| 32 |
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation
|
Kuchenbecker, J
|
|
2000
|
|
8-10 |
p. 1579-1584
6 p.
|
artikel
|
| 33 |
Evaluation of the thermal resistance of AlCu electromigration test structures
|
Braghieri, A.
|
|
2000
|
|
8-10 |
p. 1317-1322
6 p.
|
artikel
|
| 34 |
Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A–3300V module with AlSiC base plate
|
Coquery, G.
|
|
2000
|
|
8-10 |
p. 1665-1670
6 p.
|
artikel
|
| 35 |
Faster fault isolation using a dichotomy reduction of node candidates
|
Desplats, Romain
|
|
2000
|
|
8-10 |
p. 1419-1424
6 p.
|
artikel
|
| 36 |
Flip chips and acoustic micro imaging: An overview of past applications, present status, and roadmap for the future
|
Semmens, Janet E.
|
|
2000
|
|
8-10 |
p. 1539-1543
5 p.
|
artikel
|
| 37 |
Impact of ESD-induced soft drain junction damage on CMOS product lifetime
|
Reiner, Joachim C.
|
|
2000
|
|
8-10 |
p. 1619-1628
10 p.
|
artikel
|
| 38 |
Impact of process steps on electrical and electromigration performances of copper interconnects in damascene architecture
|
Gonella, R.
|
|
2000
|
|
8-10 |
p. 1329-1334
6 p.
|
artikel
|
| 39 |
Influence of fluorine contamination on reliability of thin gate oxides
|
Krüger, D.
|
|
2000
|
|
8-10 |
p. 1335-1340
6 p.
|
artikel
|
| 40 |
In-situ sem observation of electromigration in thin metal films at accelerated stress conditions
|
d'Haen, J.
|
|
2000
|
|
8-10 |
p. 1407-1412
6 p.
|
artikel
|
| 41 |
Laser cross section measurement for the evaluation of single-event effects in integrated circuits
|
Pouget, V.
|
|
2000
|
|
8-10 |
p. 1371-1375
5 p.
|
artikel
|
| 42 |
Low-field latent plasma damage depassivation in thin-oxide MOS
|
Cellere, G.
|
|
2000
|
|
8-10 |
p. 1347-1352
6 p.
|
artikel
|
| 43 |
Low frequency noise evolution during lifetime tests of lines and vias subjected to electromigration
|
Dattilo, V.
|
|
2000
|
|
8-10 |
p. 1323-1327
5 p.
|
artikel
|
| 44 |
Measurement of the thermomechanical strain of electronic devices by shearography
|
Dilhaire, S.
|
|
2000
|
|
8-10 |
p. 1509-1514
6 p.
|
artikel
|
| 45 |
Model and design rules for eliminating surface potential induced failures in high voltage integrated circuits
|
van der Pol, Jacob A.
|
|
2000
|
|
8-10 |
p. 1267-1272
6 p.
|
artikel
|
| 46 |
Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions
|
Schüβler, M.
|
|
2000
|
|
8-10 |
p. 1733-1738
6 p.
|
artikel
|
| 47 |
Modeling the conduction characteristics of broken down gate oxides in MOS structures
|
Mirand, E.
|
|
2000
|
|
8-10 |
p. 1599-1603
5 p.
|
artikel
|
| 48 |
MOS transistor reliability under analog operation
|
Thewes, R.
|
|
2000
|
|
8-10 |
p. 1545-1554
10 p.
|
artikel
|
| 49 |
New FIB/TEM evidence for a REDR mechanism in sudden failures of 980 nm SL SQW InGaAs/AlGaAs pump laser diodes
|
Vanzi, M.
|
|
2000
|
|
8-10 |
p. 1753-1757
5 p.
|
artikel
|
| 50 |
New non-destructive laser ablation based backside sample preparation method
|
Beaudoin, F
|
|
2000
|
|
8-10 |
p. 1425-1429
5 p.
|
artikel
|
| 51 |
Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method
|
Galy, P.
|
|
2000
|
|
8-10 |
p. 1473-1477
5 p.
|
artikel
|
| 52 |
Overstress and electrostatic discharge in CMOS and BCD integrated circuits
|
Meneghesso, G.
|
|
2000
|
|
8-10 |
p. 1739-1746
8 p.
|
artikel
|
| 53 |
Packaging of CMOS MEMS
|
Baltes, Henry
|
|
2000
|
|
8-10 |
p. 1255-1262
8 p.
|
artikel
|
| 54 |
Parasitic effects and long term stability of InP-based HEMTs
|
Meneghesso, G.
|
|
2000
|
|
8-10 |
p. 1715-1720
6 p.
|
artikel
|
| 55 |
PICA: Backside failure analysis of CMOS circuits using Picosecond Imaging Circuit Analysis
|
Mc Manus, M.K.
|
|
2000
|
|
8-10 |
p. 1353-1358
6 p.
|
artikel
|
| 56 |
Principle and application of a bifunctional laser linking and cutting structure for microelectronic circuits in standard CMOS-technology
|
Mende, Ole
|
|
2000
|
|
8-10 |
p. 1437-1442
6 p.
|
artikel
|
| 57 |
Quantification of scanning capacitance microscopy measurements for 2D dopant profiling
|
Malberti, P.
|
|
2000
|
|
8-10 |
p. 1395-1399
5 p.
|
artikel
|
| 58 |
Relation between robustness against ESD and against flash events in deflection amplifiers
|
van Roijen, R.
|
|
2000
|
|
8-10 |
p. 1263-1266
4 p.
|
artikel
|
| 59 |
Relationship between microstructure and electromigration damage in unpassivated PVD copper damascene interconnects
|
Koetter, T.G.
|
|
2000
|
|
8-10 |
p. 1295-1299
5 p.
|
artikel
|
| 60 |
Reliability and stability of GaAs-based pseudomorphic quantum wells for high-precision power metering
|
Haddab, Y.
|
|
2000
|
|
8-10 |
p. 1443-1447
5 p.
|
artikel
|
| 61 |
Reliability aspects of high temperature power MOSFETs
|
Manca, J.V.
|
|
2000
|
|
8-10 |
p. 1679-1682
4 p.
|
artikel
|
| 62 |
Reliability model for Al wire bonds subjected to heel crack failures
|
Ramminger, S.
|
|
2000
|
|
8-10 |
p. 1521-1525
5 p.
|
artikel
|
| 63 |
Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
|
Würfl, J.
|
|
2000
|
|
8-10 |
p. 1689-1693
5 p.
|
artikel
|
| 64 |
Reliability of flip chip and chip size packages
|
Reichl, H.
|
|
2000
|
|
8-10 |
p. 1243-1254
12 p.
|
artikel
|
| 65 |
Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer
|
Dammann, M.
|
|
2000
|
|
8-10 |
p. 1709-1713
5 p.
|
artikel
|
| 66 |
Reliability of optoelectronic components for telecommunications
|
Sauvage, D.
|
|
2000
|
|
8-10 |
p. 1701-1708
8 p.
|
artikel
|
| 67 |
Reliability of passivated p-type polycrystalline silicon thin film transistors
|
Peng, D.Z.
|
|
2000
|
|
8-10 |
p. 1491-1495
5 p.
|
artikel
|
| 68 |
Reliability testing of high-power multi-chip IGBT modules
|
Lefranc, G.
|
|
2000
|
|
8-10 |
p. 1659-1663
5 p.
|
artikel
|
| 69 |
Reliable use of commercial technology in high temperature environments
|
McCluskey, Patrick
|
|
2000
|
|
8-10 |
p. 1671-1678
8 p.
|
artikel
|
| 70 |
Room temperature grain growth in electroplated copper thin films
|
Wendrock, H.
|
|
2000
|
|
8-10 |
p. 1301-1304
4 p.
|
artikel
|
| 71 |
RTS noise in submicron SiGe epitaxial base bipolar transistors
|
Militaru, L.
|
|
2000
|
|
8-10 |
p. 1585-1590
6 p.
|
artikel
|
| 72 |
Shot noise partial suppression in the SILO regime
|
Crupi, F.
|
|
2000
|
|
8-10 |
p. 1605-1608
4 p.
|
artikel
|
| 73 |
Stability of polysilicon thin film transistors under switch operating
|
Toutah, H.
|
|
2000
|
|
8-10 |
p. 1573-1577
5 p.
|
artikel
|
| 74 |
Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry
|
Litzenberger, M.
|
|
2000
|
|
8-10 |
p. 1359-1364
6 p.
|
artikel
|
| 75 |
Surface oxide films on Aluminum bondpads: Influence on thermosonic wire bonding behavior and hardness
|
Petzold, M.
|
|
2000
|
|
8-10 |
p. 1515-1520
6 p.
|
artikel
|
| 76 |
Technique for determining a prudent voltage stress to improve product quality and reliability
|
Blish II, Richard C.
|
|
2000
|
|
8-10 |
p. 1615-1618
4 p.
|
artikel
|
| 77 |
The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM
|
Hong, Sung H.
|
|
2000
|
|
8-10 |
p. 1555-1560
6 p.
|
artikel
|
| 78 |
Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique
|
Fürböck, C.
|
|
2000
|
|
8-10 |
p. 1365-1370
6 p.
|
artikel
|
| 79 |
Thermal fatigue and metallurgical reactions in solder joints of LTCC modules
|
Rautioaho, R.
|
|
2000
|
|
8-10 |
p. 1527-1532
6 p.
|
artikel
|
| 80 |
Thermal stability of laser welded thermocouple contacts to Si for high temperature thermal sensor application
|
Ernst, H.
|
|
2000
|
|
8-10 |
p. 1683-1688
6 p.
|
artikel
|
| 81 |
The role of spreading resistance profiling in manufacturing control and technology development
|
Lin-Kwang, J.
|
|
2000
|
|
8-10 |
p. 1497-1502
6 p.
|
artikel
|
| 82 |
Transconductance increase due to charge trapping during hot-carrier stress of nMOSFETs
|
Rafí, J.M.
|
|
2000
|
|
8-10 |
p. 1567-1572
6 p.
|
artikel
|
| 83 |
Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60Co irradiation
|
Picard, C.
|
|
2000
|
|
8-10 |
p. 1647-1652
6 p.
|
artikel
|
| 84 |
Vertical die crack stresses of Flip Chip induced in major package assembly processes
|
Yang, D.G.
|
|
2000
|
|
8-10 |
p. 1533-1538
6 p.
|
artikel
|
| 85 |
Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopy
|
Weber, R.
|
|
2000
|
|
8-10 |
p. 1389-1394
6 p.
|
artikel
|
| 86 |
X-ray structure characterization of barriers for Cu metallization
|
Mattern, N.
|
|
2000
|
|
8-10 |
p. 1765-1770
6 p.
|
artikel
|
| 87 |
Yield and reliability analysis of digital standard cells with resistive defects
|
Huber, M.
|
|
2000
|
|
8-10 |
p. 1635-1640
6 p.
|
artikel
|
Tijdschrift beschrijving