| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of GaN and AlGaN/GaN FinFETs
|
Im, Ki-Sik
|
|
2014
|
97 |
C |
p. 66-75
10 p.
|
artikel
|
| 2 |
Editorial Board
|
|
|
2014
|
97 |
C |
p. IFC-
1 p.
|
artikel
|
| 3 |
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
|
Md Arshad, M.K.
|
|
2014
|
97 |
C |
p. 38-44
7 p.
|
artikel
|
| 4 |
Enhanced coupling effects in vertical double-gate FinFETs
|
Chang, Sung-Jae
|
|
2014
|
97 |
C |
p. 88-98
11 p.
|
artikel
|
| 5 |
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14nm transistor nodes
|
Niebojewski, H.
|
|
2014
|
97 |
C |
p. 45-51
7 p.
|
artikel
|
| 6 |
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
|
Sasaki, K.R.A.
|
|
2014
|
97 |
C |
p. 30-37
8 p.
|
artikel
|
| 7 |
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
|
dos Santos, S.D.
|
|
2014
|
97 |
C |
p. 14-22
9 p.
|
artikel
|
| 8 |
On the gm /ID -based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs
|
Rudenko, T.
|
|
2014
|
97 |
C |
p. 52-58
7 p.
|
artikel
|
| 9 |
Reliability of ultra-thin buried oxides for multi-VT FDSOI technology
|
Besnard, G.
|
|
2014
|
97 |
C |
p. 8-13
6 p.
|
artikel
|
| 10 |
RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
|
Lotfi, Sara
|
|
2014
|
97 |
C |
p. 59-65
7 p.
|
artikel
|
| 11 |
SOI dual-gate ISFET with variable oxide capacitance and channel thickness
|
Park, Jin-Kwon
|
|
2014
|
97 |
C |
p. 2-7
6 p.
|
artikel
|
| 12 |
SSE Special Issue EuroSOI-2013
|
Anghel, Costin
|
|
2014
|
97 |
C |
p. 1-
1 p.
|
artikel
|
| 13 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm
|
Knoll, L.
|
|
2014
|
97 |
C |
p. 76-81
6 p.
|
artikel
|
| 14 |
Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations
|
Glowacki, F.
|
|
2014
|
97 |
C |
p. 82-87
6 p.
|
artikel
|
| 15 |
Z2-FET: A promising FDSOI device for ESD protection
|
Solaro, Yohann
|
|
2014
|
97 |
C |
p. 23-29
7 p.
|
artikel
|
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