| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer solution for the steady-state behaviour of a PN-junction diode
|
Fulkerson, D.E.
|
|
1966
|
9 |
7 |
p. 709-719
11 p.
|
artikel
|
| 2 |
Chemical etchants for InAs
|
Sharma, B.L.
|
|
1966
|
9 |
7 |
p. 728-729
2 p.
|
artikel
|
| 3 |
Comment on “above cut-off frequency circuit principles for microwave tunnel diode oscillators”
|
Thompson, G.H.B.
|
|
1966
|
9 |
7 |
p. 727-728
2 p.
|
artikel
|
| 4 |
Contacting n-type high resistivity GaAs for Gunn oscillators
|
Ramachandran, T.B.
|
|
1966
|
9 |
7 |
p. 733-734
2 p.
|
artikel
|
| 5 |
Controlled doping of germanium layers made by the evaporation-condensation method
|
Haidinger, W.
|
|
1966
|
9 |
7 |
p. 689-693
5 p.
|
artikel
|
| 6 |
Field and thermionic-field emission in Schottky barriers
|
Padovani, F.A.
|
|
1966
|
9 |
7 |
p. 695-707
13 p.
|
artikel
|
| 7 |
Impurity conduction in diffused germanium and silicon layers
|
Blakemore, J.S.
|
|
1966
|
9 |
7 |
p. 673-680
8 p.
|
artikel
|
| 8 |
Quantum efficiency of GaAs electroluminescent diodes
|
Herzog, Arno H.
|
|
1966
|
9 |
7 |
p. 721-724
4 p.
|
artikel
|
| 9 |
Rise and fall times of transistors in switching operation with finite source impedance
|
Kumari, K.Santha
|
|
1966
|
9 |
7 |
p. 730-733
4 p.
|
artikel
|
| 10 |
Second breakdown and current distributions in transistors
|
Schafft, H.A.
|
|
1966
|
9 |
7 |
p. 681-682
2 p.
|
artikel
|
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