| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Characteristics of injecting point contacts on semiconductors—I In darkness
|
Braun, I.
|
|
1966
|
9 |
10 |
p. 981-989
9 p.
|
article
|
| 2 |
Complementary MOS transistors
|
White, M.H.
|
|
1966
|
9 |
10 |
p. 991-1008
18 p.
|
article
|
| 3 |
Contour deposition—A new epitaxial deposition technique for semiconductor devices and integrated circuits
|
Klein, T.
|
|
1966
|
9 |
10 |
p. 959-966
8 p.
|
article
|
| 4 |
Effect of traps distributed in energy over the a.c. response of thin film transistor and dielectric diode
|
Dascalu, D.
|
|
1966
|
9 |
10 |
p. 1020-1021
2 p.
|
article
|
| 5 |
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
|
Pao, H.C.
|
|
1966
|
9 |
10 |
p. 927-937
11 p.
|
article
|
| 6 |
Efficiency of a gallium arsenide phosphide solar cell at high light intensities
|
Epstein, A.S.
|
|
1966
|
9 |
10 |
p. 1019-1020
2 p.
|
article
|
| 7 |
Electrical properties of BaPbO3 ceramics
|
Ikushima, Hiroshi
|
|
1966
|
9 |
10 |
p. 921-925
5 p.
|
article
|
| 8 |
European meeting
|
|
|
1966
|
9 |
10 |
p. 1022-
1 p.
|
article
|
| 9 |
Failure mechanisms in thin film field effect transistors
|
Reinhartz, K.K.
|
|
1966
|
9 |
10 |
p. 911-919
9 p.
|
article
|
| 10 |
Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currents
|
Hurych, Z.
|
|
1966
|
9 |
10 |
p. 967-979
13 p.
|
article
|
| 11 |
Non-destructive detection of phosphorus oxide layers on semiconductor wafers
|
Corl, E.A.
|
|
1966
|
9 |
10 |
p. 1009-1017
9 p.
|
article
|
| 12 |
Non-destructive measurement of glass on silicon dioxide through near-infrared (NIR) interference
|
Corl, E.A.
|
|
1966
|
9 |
10 |
p. 943-948
6 p.
|
article
|
| 13 |
Solid-to-solid diffusion in the gallium arsenide device technology
|
v. Muench, W.
|
|
1966
|
9 |
10 |
p. 939-942
4 p.
|
article
|
| 14 |
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe
|
Gundlach, K.H.
|
|
1966
|
9 |
10 |
p. 949-957
9 p.
|
article
|
Journal description