| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An improved In-based ohmic contact to n-GaSb
|
Robinson, J.A
|
|
2004
|
48 |
9 |
p. 1667-1672
6 p.
|
article
|
| 2 |
A unified analytical model for charge transport in Heterojunction Bipolar Transistors
|
Venkateswara Reddy, K
|
|
2004
|
48 |
9 |
p. 1613-1622
10 p.
|
article
|
| 3 |
Characteristics of bonds produced by full ceramic and composite ultrasonic transducers
|
Xu, C.H
|
|
2004
|
48 |
9 |
p. 1531-1537
7 p.
|
article
|
| 4 |
Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics
|
Lee, Shih-Chung
|
|
2004
|
48 |
9 |
p. 1687-1690
4 p.
|
article
|
| 5 |
Characterization of symmetrical spiral inductor in 0.35 μm CMOS technology for RF application
|
Teo, T.Hui
|
|
2004
|
48 |
9 |
p. 1643-1650
8 p.
|
article
|
| 6 |
Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique
|
Rosmeulen, Maarten
|
|
2004
|
48 |
9 |
p. 1525-1530
6 p.
|
article
|
| 7 |
Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances
|
(Skip) Egley, J.L
|
|
2004
|
48 |
9 |
p. 1607-1612
6 p.
|
article
|
| 8 |
Current gain increase by SiN x passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
|
Jin, Z
|
|
2004
|
48 |
9 |
p. 1637-1641
5 p.
|
article
|
| 9 |
Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation
|
Sallese, Jean-Michel
|
|
2004
|
48 |
9 |
p. 1539-1548
10 p.
|
article
|
| 10 |
Determination of optimal insulator thickness for MISiC hydrogen sensors
|
Xu, J.P.
|
|
2004
|
48 |
9 |
p. 1673-1677
5 p.
|
article
|
| 11 |
Development of silicon nitride dots for nanocrystal memory cells
|
Wan, Y.M
|
|
2004
|
48 |
9 |
p. 1519-1524
6 p.
|
article
|
| 12 |
Effects of a trench under the gate in high voltage RESURF LDMOSFET for SOI power integrated circuits
|
Son, Won-So
|
|
2004
|
48 |
9 |
p. 1629-1635
7 p.
|
article
|
| 13 |
Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN
|
Rajagopal Reddy, V
|
|
2004
|
48 |
9 |
p. 1563-1568
6 p.
|
article
|
| 14 |
Engineering on tunnel barrier and dot surface in Si nanocrystal memories
|
Baik, Seung Jae
|
|
2004
|
48 |
9 |
p. 1475-1481
7 p.
|
article
|
| 15 |
Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation
|
Wang, Chih-Cheng
|
|
2004
|
48 |
9 |
p. 1683-1686
4 p.
|
article
|
| 16 |
GaN-based light-emitting diodes with Ni–Mg solid solution/Au p-type ohmic contact
|
Song, June-O
|
|
2004
|
48 |
9 |
p. 1597-1600
4 p.
|
article
|
| 17 |
Growth and characterization of LPCVD Si quantum dots on insulators
|
Baron, T
|
|
2004
|
48 |
9 |
p. 1503-1509
7 p.
|
article
|
| 18 |
High-voltage planar Si detectors for high-energy physics experiments: comparison between metal-overhang and field-limiting ring techniques
|
Ranjan, Kirti
|
|
2004
|
48 |
9 |
p. 1587-1595
9 p.
|
article
|
| 19 |
Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy
|
Kerr, L.L.
|
|
2004
|
48 |
9 |
p. 1579-1586
8 p.
|
article
|
| 20 |
1.3 μm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer
|
Wu, Ming-Yuan
|
|
2004
|
48 |
9 |
p. 1651-1654
4 p.
|
article
|
| 21 |
Nanocrystal memories for FLASH device applications
|
Ammendola, Giuseppe
|
|
2004
|
48 |
9 |
p. 1483-1488
6 p.
|
article
|
| 22 |
Non volatile memories with discrete storage nodes
|
De Salvo, Barbara
|
|
2004
|
48 |
9 |
p. 1461-
1 p.
|
article
|
| 23 |
Photoelectromagnetic detector on the basis of Cd x Hg1− x Te
|
Gaziyev, F.N
|
|
2004
|
48 |
9 |
p. 1679-1681
3 p.
|
article
|
| 24 |
Prediction study of elastic properties under pressure effect for zincblende BN, AlN, GaN and InN
|
Kanoun, M.B
|
|
2004
|
48 |
9 |
p. 1601-1606
6 p.
|
article
|
| 25 |
Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs
|
Omura, Yasuhisa
|
|
2004
|
48 |
9 |
p. 1661-1666
6 p.
|
article
|
| 26 |
Realizing high breakdown voltages (>600 V) in partial SOI technology
|
Tadikonda, Ramakrishna
|
|
2004
|
48 |
9 |
p. 1655-1660
6 p.
|
article
|
| 27 |
Silicon carbide TUNNETT diodes
|
Buniatyan, V.V
|
|
2004
|
48 |
9 |
p. 1569-1577
9 p.
|
article
|
| 28 |
Silicon nanocrystal based memory devices for NVM and DRAM applications
|
Rao, R.A
|
|
2004
|
48 |
9 |
p. 1463-1473
11 p.
|
article
|
| 29 |
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
|
Dimitrakis, P
|
|
2004
|
48 |
9 |
p. 1511-1517
7 p.
|
article
|
| 30 |
Spatial characterization of localized charge trapping and charge redistribution in the NROM device
|
Shappir, Assaf
|
|
2004
|
48 |
9 |
p. 1489-1495
7 p.
|
article
|
| 31 |
Study of nanocrystal memory reliability by CAST structures
|
Monzio Compagnoni, Christian
|
|
2004
|
48 |
9 |
p. 1497-1502
6 p.
|
article
|
| 32 |
Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor
|
Oh, T.K
|
|
2004
|
48 |
9 |
p. 1549-1553
5 p.
|
article
|
| 33 |
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
|
Saito, Wataru
|
|
2004
|
48 |
9 |
p. 1555-1562
8 p.
|
article
|
| 34 |
The role of surface adsorbates on electrical properties of MOVPE grown HgCdTe onto (001) GaAs substrates
|
Kim, Jin-Sang
|
|
2004
|
48 |
9 |
p. 1623-1627
5 p.
|
article
|
Journal description