| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new approach to A.C. characterization of bipolar transistors
|
Hurkx, G.A.M.
|
|
1988
|
31 |
8 |
p. 1269-1275
7 p.
|
artikel
|
| 2 |
A new method for the determination of channel depth and doping profile in buried-channel MOS transistors
|
Iniewski, K.
|
|
1988
|
31 |
8 |
p. 1259-1264
6 p.
|
artikel
|
| 3 |
A study of the sheet conductance profiles for recoil-implanted n-type silicon
|
Kwok, H.L.
|
|
1988
|
31 |
8 |
p. 1343-1345
3 p.
|
artikel
|
| 4 |
Characterizing traps in MESFETs using internal transconductance (g m) frequency dispersion
|
Kachwalla, Z.
|
|
1988
|
31 |
8 |
p. 1315-1320
6 p.
|
artikel
|
| 5 |
Comments on “effect of MS contact on the electrical behaviour of solar cells”
|
Banerjee, S.
|
|
1988
|
31 |
8 |
p. 1353-1354
2 p.
|
artikel
|
| 6 |
Comments on “theoretical C(V) equation of an amorphous-crystalline heterojunction at low frequency”
|
Liou, J.J.
|
|
1988
|
31 |
8 |
p. 1349-1350
2 p.
|
artikel
|
| 7 |
Computation of the base resistance of bipolar transistors from layout details including quasi three-dimensional effects
|
Hébert, François
|
|
1988
|
31 |
8 |
p. 1235-1241
7 p.
|
artikel
|
| 8 |
Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimes
|
Haddara, Hisham S.
|
|
1988
|
31 |
8 |
p. 1289-1298
10 p.
|
artikel
|
| 9 |
Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters
|
Deen, M.J.
|
|
1988
|
31 |
8 |
p. 1299-1308
10 p.
|
artikel
|
| 10 |
Current-voltage characteristics and performance efficiency of polysilicon solar cells
|
Mohammad, S.Noor
|
|
1988
|
31 |
8 |
p. 1221-1228
8 p.
|
artikel
|
| 11 |
Dielectric spectroscopy of silicon barrier devices
|
Jonscher, Andrew K.
|
|
1988
|
31 |
8 |
p. 1277-1288
12 p.
|
artikel
|
| 12 |
Editorial report
|
|
|
1988
|
31 |
8 |
p. i-ii
nvt p.
|
artikel
|
| 13 |
Effective recombination velocity of low-high junctions
|
Selvakumar, C.R.
|
|
1988
|
31 |
8 |
p. 1346-1348
3 p.
|
artikel
|
| 14 |
Electrical characterization of Schottky diodes on very low energy ion-etched GaAs surfaces
|
Neffati, T.
|
|
1988
|
31 |
8 |
p. 1335-1342
8 p.
|
artikel
|
| 15 |
Erratum
|
|
|
1988
|
31 |
8 |
p. I-
1 p.
|
artikel
|
| 16 |
Error reduction in the ellipsometric measurement on thin films
|
Ho, Jau Hwang
|
|
1988
|
31 |
8 |
p. 1321-1326
6 p.
|
artikel
|
| 17 |
Evidence for acceptor surface states in GaAs planar-type devices
|
Dansas, P.
|
|
1988
|
31 |
8 |
p. 1327-1333
7 p.
|
artikel
|
| 18 |
1/f noise in ion-implanted indium phosphide layers
|
Tacano, Munecazu
|
|
1988
|
31 |
8 |
p. 1243-1245
3 p.
|
artikel
|
| 19 |
Memory characteristics of MNOS capacitors fabricated with PECVD silicon nitride
|
Khaliq, M.A.
|
|
1988
|
31 |
8 |
p. 1229-1233
5 p.
|
artikel
|
| 20 |
On space-charge-limited conduction in semi-insulating GaAs
|
Mareš, J.J.
|
|
1988
|
31 |
8 |
p. 1309-1313
5 p.
|
artikel
|
| 21 |
Reduction of gate resistance in tenth-micron gate MODFETs for microwave applications
|
Wang, G.W.
|
|
1988
|
31 |
8 |
p. 1247-1250
4 p.
|
artikel
|
| 22 |
Reply to “Comments on theoretical C(V) equation of an amorphous-crystalline heterojunction at low frequency”
|
Rubinelli, F.
|
|
1988
|
31 |
8 |
p. 1351-1352
2 p.
|
artikel
|
| 23 |
Some interesting characteristics of GaAs vertical p + in + diodes
|
Khan, W.I.
|
|
1988
|
31 |
8 |
p. 1265-1268
4 p.
|
artikel
|
| 24 |
Transmission/scanning transmission electron microscopy investigation of Au/Cr contacts to p-type InP
|
Ivey, D.G.
|
|
1988
|
31 |
8 |
p. 1251-1258
8 p.
|
artikel
|
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