| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
|
Oh, Seog-Ju
|
|
1988
|
31 |
6 |
p. 1113-1118
6 p.
|
artikel
|
| 2 |
Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation
|
Haddara, Hisham
|
|
1988
|
31 |
6 |
p. 1077-1082
6 p.
|
artikel
|
| 3 |
A three-piece model of channel length modulation in submicrometer MOSFETs
|
Nguyen-Duc, Chien
|
|
1988
|
31 |
6 |
p. 1057-1063
7 p.
|
artikel
|
| 4 |
Editorial - software survey section
|
|
|
1988
|
31 |
6 |
p. I-III
nvt p.
|
artikel
|
| 5 |
Effect of absorption on photon emission from reverse-biased silicon p-n junctions
|
Gautam, D.K.
|
|
1988
|
31 |
6 |
p. 1119-1121
3 p.
|
artikel
|
| 6 |
Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p +-n-n + GaAs diodes
|
Brudnyi, V.N.
|
|
1988
|
31 |
6 |
p. 1093-1099
7 p.
|
artikel
|
| 7 |
Electron energy distribution for calculation of gate leakage current in MOSFETs
|
Goldsman, N.
|
|
1988
|
31 |
6 |
p. 1089-1092
4 p.
|
artikel
|
| 8 |
1/f noise in (100) n-channel Si-MOSFETs from T = 4.2 K to T = 295 K
|
Hendriks, E.A.
|
|
1988
|
31 |
6 |
p. 1105-1111
7 p.
|
artikel
|
| 9 |
Forward current-voltage characteristics of gallium arsenide power diodes at high current densities
|
Delimova, L.A.
|
|
1988
|
31 |
6 |
p. 1101-1104
4 p.
|
artikel
|
| 10 |
Generation-annealing of oxide and interface traps at 150 and 298 K in oxidized silicon stressed by Fowler-Nordheim electron tunneling
|
Hsu, Charles Ching-Hsiang
|
|
1988
|
31 |
6 |
p. 1003-1007
5 p.
|
artikel
|
| 11 |
High-field, nonlinear electron transport in lightly doped Schottky-barrier diodes
|
Darling, Robert B.
|
|
1988
|
31 |
6 |
p. 1031-1047
17 p.
|
artikel
|
| 12 |
High temperature lifetesting of silicon metal-thin insulator-semiconductor heterojunction emitter bipolar transistors
|
Guo, W.L.
|
|
1988
|
31 |
6 |
p. 1071-1075
5 p.
|
artikel
|
| 13 |
Impurity concentration dependence of the 1/f noise parameter α in silicon
|
Jevtić, M.M.
|
|
1988
|
31 |
6 |
p. 1049-1052
4 p.
|
artikel
|
| 14 |
Magnetoresistance effect in AlGaAs/GaAs two-dimensional electron gas structures at room temperature
|
Battersby, S.J.
|
|
1988
|
31 |
6 |
p. 1083-1088
6 p.
|
artikel
|
| 15 |
Monte-Carlo methods for determination of transport properties of semiconductors
|
Nedjalkov, M.
|
|
1988
|
31 |
6 |
p. 1065-1069
5 p.
|
artikel
|
| 16 |
Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor
|
Meyyappan, M.
|
|
1988
|
31 |
6 |
p. 1023-1030
8 p.
|
artikel
|
| 17 |
Sulphur diffusion into InP by an open tube process
|
Parat, Krishna K.
|
|
1988
|
31 |
6 |
p. 1053-1056
4 p.
|
artikel
|
| 18 |
Threshold voltage models of the narrow-gate effect in micron and submicron MOSFETs
|
Chung, Steve Shao-Shiun
|
|
1988
|
31 |
6 |
p. 1009-1021
13 p.
|
artikel
|
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