| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A concise and complete solution for linearly graded p-n junctions
|
Jindal, C.
|
|
1988
|
31 |
5 |
p. 893-897
5 p.
|
artikel
|
| 2 |
An accurate two-dimensional LBIC solution for bipolar transistors
|
Benarab, A.
|
|
1988
|
31 |
5 |
p. 899-910
12 p.
|
artikel
|
| 3 |
An analytical model for a vertical metal base transistor operated in the bipolar mode
|
Gustafsson, Staffan
|
|
1988
|
31 |
5 |
p. 965-972
8 p.
|
artikel
|
| 4 |
A new method for determining the terminal series resistances and high-injection coefficient of bipolar transistors in CMOS integrated circuits for computer-aided circuit modeling
|
Yang, Yeu-Haw
|
|
1988
|
31 |
5 |
p. 929-936
8 p.
|
artikel
|
| 5 |
A simple formula for two-dimensional capacitance
|
Cetner, Arkadiusz
|
|
1988
|
31 |
5 |
p. 973-974
2 p.
|
artikel
|
| 6 |
A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi2/Si Schottky barriers
|
De Bosscher, W.
|
|
1988
|
31 |
5 |
p. 945-951
7 p.
|
artikel
|
| 7 |
A thermal activation model for 1/ƒy noise in Si-MOSFETs
|
Surya, Charles
|
|
1988
|
31 |
5 |
p. 959-964
6 p.
|
artikel
|
| 8 |
Diffusion length studies in silicon by the surface photovoltage method
|
Saritas, M.
|
|
1988
|
31 |
5 |
p. 835-842
8 p.
|
artikel
|
| 9 |
Editorial - software survey section
|
|
|
1988
|
31 |
5 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Effect of the InP doping density on the electrical properties of the two-dimensional electron gas in LPE-grown modulation-doped heterostructures
|
Su, Y.K.
|
|
1988
|
31 |
5 |
p. 953-958
6 p.
|
artikel
|
| 11 |
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
|
Moy, D.
|
|
1988
|
31 |
5 |
p. 843-849
7 p.
|
artikel
|
| 12 |
Ensemble Monte Carlo simulation of semiclassical nonlinear electron transport across heterojunction band discontinuities
|
Kim, K.
|
|
1988
|
31 |
5 |
p. 877-885
9 p.
|
artikel
|
| 13 |
Fundamental 1/ƒ noise in silicon bipolar transistors
|
Pawlikiewicz, A.H.
|
|
1988
|
31 |
5 |
p. 831-834
4 p.
|
artikel
|
| 14 |
Heavy doping parameters estimated from transistor measurements
|
Kuzmicz, Wieslaw
|
|
1988
|
31 |
5 |
p. 911-919
9 p.
|
artikel
|
| 15 |
Hot hole creation due to impact excitation in the metal electrode of a forward biased MIS structure
|
Jones, R.E.
|
|
1988
|
31 |
5 |
p. 989-997
9 p.
|
artikel
|
| 16 |
Measurement of generation lifetime in thin silicon layers
|
Hof, T.E.
|
|
1988
|
31 |
5 |
p. 937-944
8 p.
|
artikel
|
| 17 |
Modified charge-control model for MOS transistors in pre-saturation region
|
|
|
1988
|
31 |
5 |
p. 999-1001
3 p.
|
artikel
|
| 18 |
Neuron-like transient phenomena in silicon p-i-n structures
|
Coon, D.D.
|
|
1988
|
31 |
5 |
p. 851-862
12 p.
|
artikel
|
| 19 |
Parameter estimation in MOS conductance studies
|
Noras, James M.
|
|
1988
|
31 |
5 |
p. 981-987
7 p.
|
artikel
|
| 20 |
Percolation network for thick resistive films
|
Kusy, A.
|
|
1988
|
31 |
5 |
p. 821-830
10 p.
|
artikel
|
| 21 |
SILO isolation technique: A study of active and parasitic device characteristics with semi-recessed and fully-recessed field oxides
|
Coppee, J.-L.
|
|
1988
|
31 |
5 |
p. 887-891
5 p.
|
artikel
|
| 22 |
Stress-bias dependence of hot-carrier-induced degradation in MOSFETs
|
Trocino, Michael R.
|
|
1988
|
31 |
5 |
p. 873-875
3 p.
|
artikel
|
| 23 |
The isotype Al0.05Ga0.95As/Al0.35Ga0.65As interface of the LPE-grown double heterostructure at elevated temperature
|
Krispin, P.
|
|
1988
|
31 |
5 |
p. 921-927
7 p.
|
artikel
|
| 24 |
The optoelectronic response of an MIS-type tunnel-emitter transistor
|
Cochran, S.R.
|
|
1988
|
31 |
5 |
p. 863-872
10 p.
|
artikel
|
| 25 |
Yield model for in-line integrated circuit production control
|
Dimitrijev, S.
|
|
1988
|
31 |
5 |
p. 975-979
5 p.
|
artikel
|
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