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                             115 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A generalization of Kubo formalism for hot-electron transport Niez, Jean Jacques
 1988
 31 3-4 p. 559-562
4 p.
 artikel
2 Analysis of carrier distribution function through Smith-Purcell effect in GaAs/GaAlAs heterostructures Gornik, E.
 1988
 31 3-4 p. 751-754
4 p.
 artikel
3 Analysis of quantum features in transport theory from a quantum Monte Carlo approach Brunetti, Rossella
 1988
 31 3-4 p. 527-530
4 p.
 artikel
4 A new Monte Carlo simulation of hot electron transport with electron-electron scattering Hasegawa, A.
 1988
 31 3-4 p. 547-550
4 p.
 artikel
5 A new Monte Carlo technique for the solution of the Boltzmann transport equation Jacoboni, C.
 1988
 31 3-4 p. 523-526
4 p.
 artikel
6 Attendees list 1988
 31 3-4 p. V-XI
nvt p.
 artikel
7 Author index 1988
 31 3-4 p. I-III
nvt p.
 artikel
8 Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si Ting, C.S.
 1988
 31 3-4 p. 551-554
4 p.
 artikel
9 Ballistic electron transport in GaAs/AlGaAs tunneling junctions with optical phonon emission Hu, P.
 1988
 31 3-4 p. 555-558
4 p.
 artikel
10 Ballistic Transport Heiblum, M.
 1988
 31 3-4 p. 617-618
2 p.
 artikel
11 Breakdown of coherence in resonant tunneling through double-barrier heterostructures Goldman, V.J.
 1988
 31 3-4 p. 731-734
4 p.
 artikel
12 Carrier-carrier interaction and intervalley transfer effects on the ultrafast relaxation of photoexcited electrons in GaAs Osman, M.A.
 1988
 31 3-4 p. 471-474
4 p.
 artikel
13 Chaotic conductivity oscillation in n-type Si by impact-ionization in freezeout temperature range Yamada, K.
 1988
 31 3-4 p. 809-812
4 p.
 artikel
14 Collective electron interaction in double-barrier GaAs transistors Gružinskis, V.
 1988
 31 3-4 p. 345-347
3 p.
 artikel
15 Diffusion coefficients of two-dimensional electron gas in heterojunctions Zimmermann, J.
 1988
 31 3-4 p. 367-370
4 p.
 artikel
16 Direct observation of intersubband relaxation in narrow multiple quantum well structures Seilmeier, A.
 1988
 31 3-4 p. 767-770
4 p.
 artikel
17 Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs Xu, Jingming
 1988
 31 3-4 p. 607-610
4 p.
 artikel
18 Effect of continuum resonances on hot carrier transport in quantum wells Porod, Wolfgang
 1988
 31 3-4 p. 359-362
4 p.
 artikel
19 Electric field-induced magnetophonon resonance Mori, N.
 1988
 31 3-4 p. 777-780
4 p.
 artikel
20 Electron-electron scattering during femtosecond photoexcitation in quantum wells Goodnick, S.M.
 1988
 31 3-4 p. 463-466
4 p.
 artikel
21 Electron gas heating and cooling effects by microwave electric fields in compensated InSb Ašmontas, S.
 1988
 31 3-4 p. 701-703
3 p.
 artikel
22 Electron-hole drag in semiconductors Höpfel, R.A.
 1988
 31 3-4 p. 643-648
6 p.
 artikel
23 Electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperatures Artaki, M.
 1988
 31 3-4 p. 383-386
4 p.
 artikel
24 Electron tunneling from donors and excitons Dargys, A.
 1988
 31 3-4 p. 717-722
6 p.
 artikel
25 Electron tunnelling into interfacial Landau states in single barrier N-type (InGa)As/InP/(InGa)As heterostructures Chan, K.S.
 1988
 31 3-4 p. 711-716
6 p.
 artikel
26 Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures Masselink, W.T.
 1988
 31 3-4 p. 337-340
4 p.
 artikel
27 Energy and spin polarization analysis of near band gap photoemission in AlGaAs/GaAs heterostructures Ciccacci, F.
 1988
 31 3-4 p. 489-492
4 p.
 artikel
28 Energy relaxation in p- and n-GaAs quantum wells: Confinement effects Tatham, M.
 1988
 31 3-4 p. 459-462
4 p.
 artikel
29 Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices Kizilyalli, Isik.C.
 1988
 31 3-4 p. 355-357
3 p.
 artikel
30 Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs Bailey, D.W.
 1988
 31 3-4 p. 467-470
4 p.
 artikel
31 Extremely enhanced I–V collapse of n+-AlxGa1-xAs / GaAs MODFET with AlAs mole fraction x higher than 0.4 Kobayashi, T.
 1988
 31 3-4 p. 603-606
4 p.
 artikel
32 Far IR luminescence of hot holes in Ge: Diagnostics of intersubband population inversion and effects of uniaxial stress Gavrilenko, V.I.
 1988
 31 3-4 p. 755-758
4 p.
 artikel
33 Femtosecond hot carrier energy redistribution in GaAs and AlGaAs Schoenlein, R.W.
 1988
 31 3-4 p. 443-446
4 p.
 artikel
34 Femtosecond relaxation dynamics of nonequilibrium carriers in GaAs and related compounds Tang, C.L.
 1988
 31 3-4 p. 439-442
4 p.
 artikel
35 Femtosecond spectroscopy and transport Shank, Charles V.
 1988
 31 3-4 p. 397-399
3 p.
 artikel
36 Feynman path integral study of confined carriers subject to a statistical potential Register, L.F.
 1988
 31 3-4 p. 563-566
4 p.
 artikel
37 Foreword Shah, Jagdeep
 1988
 31 3-4 p. ix-
1 p.
 artikel
38 Generation-recombination noise of hot carriers in semiconductors Reggiani, Lino
 1988
 31 3-4 p. 543-546
4 p.
 artikel
39 Heating of cold electrons by a warm GaAs lattice: A novel probe to carrier-phonon interaction Rühle, W.W.
 1988
 31 3-4 p. 407-412
6 p.
 artikel
40 High density femtosecond excitation of nonthermal carrier distributions in intrinsic and modulation doped Gaas quantum wells Knox, Wayne H.
 1988
 31 3-4 p. 425-430
6 p.
 artikel
41 High field hot electron transport through AlxGa1-xAs multiquantum well superlattices Levine, B.F.
 1988
 31 3-4 p. 583-587
5 p.
 artikel
42 High resolution studies of 2 D plasma transport in GaAs/GaAlAs quantum wells Hillmer, H.
 1988
 31 3-4 p. 485-488
4 p.
 artikel
43 Hole-acoustic phonon energy loss rates in GaAs quantum wells determined by light scattering Pinczuk, A.
 1988
 31 3-4 p. 477-479
3 p.
 artikel
44 Hot carrier energy loss rates in GaInAs/InP quantum wells Westland, D.J.
 1988
 31 3-4 p. 431-434
4 p.
 artikel
45 Hot carrier relaxation and recombination in GaSb/AlSb quantum wells Cebulla, U.
 1988
 31 3-4 p. 507-510
4 p.
 artikel
46 Hot carrier relaxation in highly excited III–V compounds Kurz, H.
 1988
 31 3-4 p. 447-450
4 p.
 artikel
47 Hot carrier relaxation phenomena detected by optically induced magnetization Krenn, H.
 1988
 31 3-4 p. 481-484
4 p.
 artikel
48 Hot carrier trapping in GaAs/AlGaAs single quantum wells with different confinement structures Polland, H.-J.
 1988
 31 3-4 p. 341-344
4 p.
 artikel
49 Hot electron capture in GaAs MQW: NDR and persistent effects Balkan, N.
 1988
 31 3-4 p. 799-803
5 p.
 artikel
50 Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells Makiyama, K.
 1988
 31 3-4 p. 371-374
4 p.
 artikel
51 Hot electron dynamics in device structures Hayes, J.R.
 1988
 31 3-4 p. 619-623
5 p.
 artikel
52 Hot electron energy relaxation via acoustic phonon emission in InP/In0.53Ga0.47As heterostructures and single quantum wells Barlow, M.J.
 1988
 31 3-4 p. 501-505
5 p.
 artikel
53 Hot electron relaxation in polar semiconductors Das Sarma, S.
 1988
 31 3-4 p. 695-700
6 p.
 artikel
54 Hot electrons in SiO2: ballistic to steady-state transport Fischetti, M.V.
 1988
 31 3-4 p. 629-636
8 p.
 artikel
55 Hot electron transport parallel to strong magnetic fields in gallium arsenide Hellman, E.S.
 1988
 31 3-4 p. 785-788
4 p.
 artikel
56 Hot phonon dynamics Lugli, Paolo
 1988
 31 3-4 p. 667-672
6 p.
 artikel
57 Hot phonons in GaAs revisited Pötz, W.
 1988
 31 3-4 p. 673-676
4 p.
 artikel
58 Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters Woolard, D.L.
 1988
 31 3-4 p. 571-574
4 p.
 artikel
59 Impact ionization and choatic states in narrow-gap semiconductors under a strong magnetic field Abe, Yutaka
 1988
 31 3-4 p. 795-798
4 p.
 artikel
60 Impact ionization and electric field quenching of photoluminescence in silicon Weman, H.
 1988
 31 3-4 p. 791-794
4 p.
 artikel
61 Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation Deveaud, Benoit
 1988
 31 3-4 p. 435-438
4 p.
 artikel
62 Interaction between layers by electron-electron scattering Jacoboni, Carlo
 1988
 31 3-4 p. 649-652
4 p.
 artikel
63 Intersubband relaxation of photoexcited hot carriers in quantum wells Oberli, D.Y.
 1988
 31 3-4 p. 413-418
6 p.
 artikel
64 Inverted populations of hot electrons in a magnetic field: The effects of electron-electron and impurity scattering in n-GaAs Abou El-Ela, F.
 1988
 31 3-4 p. 691-694
4 p.
 artikel
65 Investigations of recombination mechanisms in the pulsed far infra red photoresponse of n-InP Rikken, G.L.J.A.
 1988
 31 3-4 p. 763-766
4 p.
 artikel
66 Laser induced cooling of hot electrons in n-InSb by free carrier assisted transitions Hanes, L.K.
 1988
 31 3-4 p. 493-496
4 p.
 artikel
67 Low frequency and chaotic current oscillations in semiinsulating GaAs Knap, W.
 1988
 31 3-4 p. 813-816
4 p.
 artikel
68 Magnetic field-dependent hot carrier relaxation in GaAs quantum wells Turberfield, A.J.
 1988
 31 3-4 p. 387-390
4 p.
 artikel
69 Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As Leadbeater, M.L.
 1988
 31 3-4 p. 707-710
4 p.
 artikel
70 Measurements of hot electron magnetophonon resonance in GaAs/GaAlAs heterostructures Leadley, D.R.
 1988
 31 3-4 p. 781-784
4 p.
 artikel
71 Microscopic high field transport in graded heterostructures Al-Omar, A.
 1988
 31 3-4 p. 329-332
4 p.
 artikel
72 Monte Carlo investigation of minority electron transport in In0.53Ga0.47As Osman, M.A.
 1988
 31 3-4 p. 653-656
4 p.
 artikel
73 Monte-Carlo simulation of hot electron spectra Beton, P.H.
 1988
 31 3-4 p. 637-640
4 p.
 artikel
74 Monte-Carlo study of the double heterojunction bipolar transistor Pelouard, J-L.
 1988
 31 3-4 p. 333-336
4 p.
 artikel
75 New results on stimulated emission from p-Germanium in crossed fields Helm, M.
 1988
 31 3-4 p. 759-762
4 p.
 artikel
76 Nonequilibrium carrier-phonon coupling in a semiconductor quantum well Marchetti, M.C.
 1988
 31 3-4 p. 677-681
5 p.
 artikel
77 Nonequilibrium phonon effects on hot carrier transport and thermal noise in semiconductor heterostructures Lei, X.L.
 1988
 31 3-4 p. 531-534
4 p.
 artikel
78 Nonequilibrium phonon effects on the time-dependent relaxation of hot carriers in GaAs MQW Kai Shum, M.R.Junnarkar
 1988
 31 3-4 p. 451-454
4 p.
 artikel
79 Nonlinear energy relaxation oscillations and chaotic dynamics of hot carriers Schöll, Eckehard
 1988
 31 3-4 p. 539-542
4 p.
 artikel
80 Nonlinear modulation of hot carrier mobility and optical absorption in photoexcited polar semiconductors Rodriguez, M.A.
 1988
 31 3-4 p. 511-514
4 p.
 artikel
81 Normal and hot electron magneto-phonon resonance in a GaAs-heterostructure Warmenbol, P.
 1988
 31 3-4 p. 771-775
5 p.
 artikel
82 On the analytical approach to the real space electron transfer in GaAsAlGaAs heterostructures Moško, Martin
 1988
 31 3-4 p. 363-366
4 p.
 artikel
83 Opening address Shah, Jagdeep
 1988
 31 3-4 p. xv-
1 p.
 artikel
84 Picosecond Raman scattering from non-equilibrium LO and TO phonons in germanium Young, J.F.
 1988
 31 3-4 p. 455-458
4 p.
 artikel
85 Quantitative characterization of chaotic current oscillations in GaAs:Cr Požela, J.
 1988
 31 3-4 p. 805-808
4 p.
 artikel
86 Quantum corrections to the Monte Carlo solution of hot-electron transport in semiconductors Jauho, Antti-Pekka
 1988
 31 3-4 p. 535-538
4 p.
 artikel
87 Quantum transport and solid-state dynamics for Bloch electrons in an electric field Iafrate, Gerald J.
 1988
 31 3-4 p. 517-521
5 p.
 artikel
88 Quantum transport modeling of resonant-tunneling devices Frensley, William R.
 1988
 31 3-4 p. 739-742
4 p.
 artikel
89 Quantum tunneling properties from a Wigner function study Kluksdahl, N.C.
 1988
 31 3-4 p. 743-746
4 p.
 artikel
90 Real space hot electron distributions and transfer effects in heterostructures Cho, Y.
 1988
 31 3-4 p. 325-328
4 p.
 artikel
91 Real space transfer: Generalized approach to transport in confined geometries Hess, K.
 1988
 31 3-4 p. 319-324
6 p.
 artikel
92 Real space transfer of two dimensional electrons in double quantum well structures Sawaki, N.
 1988
 31 3-4 p. 351-354
4 p.
 artikel
93 Reduced intervalley transfer in a GaAsAlGaAs heterojunction Nederveen, K.
 1988
 31 3-4 p. 375-377
3 p.
 artikel
94 Resonant-tunneling hot electron transistor (RHET) Yokoyama, N.
 1988
 31 3-4 p. 577-582
6 p.
 artikel
95 Resonant tunneling through quantum wells: Physics and device applications Capasso, F.
 1988
 31 3-4 p. 723-729
7 p.
 artikel
96 Room temperature operation of unipolar hot electron transistors Levi, A.F.J.
 1988
 31 3-4 p. 625-628
4 p.
 artikel
97 Scattering processes in semiconductors Combescot, Monique
 1988
 31 3-4 p. 657-661
5 p.
 artikel
98 Secondary emission studies of hot carrier relaxation in polar semiconductors Kash, J.A.
 1988
 31 3-4 p. 419-424
6 p.
 artikel
99 Simulations of nonlinear transport in AlGaAs/GaAs single well heterostructures Kim, K.
 1988
 31 3-4 p. 349-350
2 p.
 artikel
100 Spatio-temporal instabilities in the electric breakdown of p-germanium Peinke, J.
 1988
 31 3-4 p. 817-820
4 p.
 artikel
101 The effect of hot phonons and coupled phonon-plasmon modes on scattering-induced NDR in quantum wells Ridley, B.K.
 1988
 31 3-4 p. 683-685
3 p.
 artikel
102 The effect of reflecting contacts on high field transport Arnold, D.
 1988
 31 3-4 p. 593-594
2 p.
 artikel
103 The effects of band structure on electron-hole Coulomb scattering Young, J.F.
 1988
 31 3-4 p. 663-666
4 p.
 artikel
104 The influence of cathode contacts on near-micron InP transferred electron devices Czekaj, J.
 1988
 31 3-4 p. 599-602
4 p.
 artikel
105 Theoretical and experimental investigations of the heterostructure hot electron diode Emanuel, M.A.
 1988
 31 3-4 p. 589-592
4 p.
 artikel
106 The submicron inverted MODFET I-GaAs/N+-AlGaAs: a 2D Monte-Carlo study Fauquembergue, R.
 1988
 31 3-4 p. 595-598
4 p.
 artikel
107 The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment Couch, N.R.
 1988
 31 3-4 p. 613-616
4 p.
 artikel
108 Transient hot-phonon effects on the velocity overshoot of GaAs: A Monte Carlo analysis Rieger, M.
 1988
 31 3-4 p. 687-690
4 p.
 artikel
109 Transport correlation coefficients and photoconductive switching Grondin, Robert O.
 1988
 31 3-4 p. 567-570
4 p.
 artikel
110 Transport in photoexcited hot carriers systems Freire, V.N.
 1988
 31 3-4 p. 497-499
3 p.
 artikel
111 Tunneling studies of the miniband structure of a superlattice England, P.
 1988
 31 3-4 p. 735-737
3 p.
 artikel
112 Tunneling times for wave packets narrow in wave-number space Hauge, E.H.
 1988
 31 3-4 p. 747-748
2 p.
 artikel
113 Ultrafast relaxation of hot photoexcited carriers in GaAs Ferry, D.K.
 1988
 31 3-4 p. 401-406
6 p.
 artikel
114 Ultrafast S-type NDC and self-oscillations under vertical transport in multilayer heterostructures Belyantsev, A.M.
 1988
 31 3-4 p. 379-382
4 p.
 artikel
115 Warm electron coefficient of two dimensional electron gas in a GaAs-AlGaAs heterojunctions at low temperatures Basu, P.K.
 1988
 31 3-4 p. 391-394
4 p.
 artikel
                             115 gevonden resultaten
 
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