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                             33 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison of minimum propagation delay and unity power transfer frequency of submicron MOSFETs Simmons, J.G.
 1988
 31 2 p. 314-316
3 p.
 artikel
2 Alloy scattering mobility of two dimensional electron gas in rectangular and delta doped quantum wells in quaternaries Bhattacharyya, K.
 1988
 31 2 p. 309-310
2 p.
 artikel
3 A model for excess base noise in bipolar junction transistors Davis, T.D.
 1988
 31 2 p. 135-141
7 p.
 artikel
4 An improved differential voltage technique for capacitance measurement Wu, X.
 1988
 31 2 p. 167-170
4 p.
 artikel
5 An improved hot-electron-emission model for simulating the gate-current characteristic of MOSFETs Wang, Cheng T.
 1988
 31 2 p. 229-231
3 p.
 artikel
6 A pseudo-two-dimensional analysis of short channel MOSFETs El Banna, M.
 1988
 31 2 p. 269-274
6 p.
 artikel
7 Argon plasma treatment effects on SiSiO2 structures Kassabov, J.
 1988
 31 2 p. 147-154
8 p.
 artikel
8 Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies Hébert, François
 1988
 31 2 p. 283-290
8 p.
 artikel
9 Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example Lindholm, Fredrik A.
 1988
 31 2 p. 197-204
8 p.
 artikel
10 Computed noise performance of optimized JFETs as front ends in fiber-optic preamplifiers Solheim, Alan G.
 1988
 31 2 p. 311-313
3 p.
 artikel
11 Computer analysis and design optimization of magnetic-field sensitive MOS device Tongli, Wei
 1988
 31 2 p. 237-240
4 p.
 artikel
12 Criteria for estimating the impact of series resistance on MOSFET performance Gildenblat, G.Sh.
 1988
 31 2 p. 261-263
3 p.
 artikel
13 Current noise in N-type AlxGa1 −xAs Hofman, F.
 1988
 31 2 p. 279-282
4 p.
 artikel
14 Determination of doping profiles for low boron ion implantations in silicon Kinder, R.
 1988
 31 2 p. 265-268
4 p.
 artikel
15 Diffusion and inter-valley noise in (100) n-channel Si-MOSFETs from T = 4.2 to 295 K Hendriks, E.A.
 1988
 31 2 p. 171-180
10 p.
 artikel
16 Editorial — Software survey section 1988
 31 2 p. I-III
nvt p.
 artikel
17 Effective gain and effective excess noise factor associated with dark current in superlattice APDs Fyath, R.S.
 1988
 31 2 p. 275-277
3 p.
 artikel
18 Electrical and optical properties of heavily doped Mg- and Te-GaAs grown by liquid-phase epitaxy Wu, M.C.
 1988
 31 2 p. 251-256
6 p.
 artikel
19 Experimental investigation of the dependence of barrier height on metal work function for metalSiO2pSi (MIS) Schottky-barrier diodes in the presence of inversion Chattopadhyay, P.
 1988
 31 2 p. 143-146
4 p.
 artikel
20 Generation currents from interface states in selectively implanted MOS structures Hawkins, G.A.
 1988
 31 2 p. 181-196
16 p.
 artikel
21 High current dependence of base series resistance of bipolar transistors Gracia, F.J.
 1988
 31 2 p. 307-308
2 p.
 artikel
22 Interface effects on MgZn3P2 Schottky diodes Szatkowski, J.
 1988
 31 2 p. 257-260
4 p.
 artikel
23 Low frequency noise and DLTS as semiconductor device characterization tools Scholz, F.
 1988
 31 2 p. 205-217
13 p.
 artikel
24 Low-resistance AuZn gate ohmic contacts for InP JFETs Boos, J.B.
 1988
 31 2 p. 127-133
7 p.
 artikel
25 Multiple-threshold-voltage CMOS/SOS by focused ion beams Lee, J.Y.
 1988
 31 2 p. 155-158
4 p.
 artikel
26 One- and two-dimensional nonlinear dopant diffusion in crystalline silicon—some analytical results Please, C.P.
 1988
 31 2 p. 299-305
7 p.
 artikel
27 On the temperature dependence of the Hooge parameter αH in n and p-channel silicon JFETs Pawlikiewicz, A.H.
 1988
 31 2 p. 233-236
4 p.
 artikel
28 Operational characteristics of CMOS op-amps at cryogenic temperatures Deen, M.J.
 1988
 31 2 p. 291-297
7 p.
 artikel
29 Photon emission from reverse-biased silicon P-N junctions Gautam, D.K.
 1988
 31 2 p. 219-222
4 p.
 artikel
30 Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2 Hasegawa, Fumio
 1988
 31 2 p. 223-228
6 p.
 artikel
31 Spatial correlation measurements of 1 ƒ noise in semiconductors Celik-Butler, Zeynep
 1988
 31 2 p. 241-244
4 p.
 artikel
32 The effect of gate material on oxide degradation due to charge-injection in metal-oxide-semiconductor capacitors Avni, E.
 1988
 31 2 p. 245-250
6 p.
 artikel
33 Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells Kachare, R.
 1988
 31 2 p. 159-166
8 p.
 artikel
                             33 gevonden resultaten
 
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