| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the enhancement of the performance of a polysilicon solar cell due to simultaneous passivation of grain boundaries and back contact
|
Elnahwy, S.
|
|
1988
|
31 |
12 |
p. 1703-1709
7 p.
|
artikel
|
| 2 |
Bipolar transistor: Two-dimensional effects on current gain and base transit time
|
Jos, H.F.F.
|
|
1988
|
31 |
12 |
p. 1715-1724
10 p.
|
artikel
|
| 3 |
Circuit modeling of collector current spreading effects in quasi-saturation for advanced bipolar transistors
|
Yuan, J.-S.
|
|
1988
|
31 |
12 |
p. 1725-1731
7 p.
|
artikel
|
| 4 |
Comments on “modelling of a depletion-mode MOSFET”
|
Turchetti, Claudio
|
|
1988
|
31 |
12 |
p. 1747-1748
2 p.
|
artikel
|
| 5 |
Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties
|
Weiss, S.
|
|
1988
|
31 |
12 |
p. 1733-1742
10 p.
|
artikel
|
| 6 |
Editorial — Software survey section
|
|
|
1988
|
31 |
12 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Efficient simulation of impurity redistribution in VLSI fabrication processes
|
Mijalković, S.
|
|
1988
|
31 |
12 |
p. 1689-1693
5 p.
|
artikel
|
| 8 |
Electrical switching in the three terminal double heterostructure opto-electronic switching device—Active layer contact
|
Taylor, G.W.
|
|
1988
|
31 |
12 |
p. 1695-1701
7 p.
|
artikel
|
| 9 |
Excess generation-recombination noise in reverse biased Schottky-barrier diodes
|
Dąbrowski, Władysław
|
|
1988
|
31 |
12 |
p. 1657-1661
5 p.
|
artikel
|
| 10 |
Interface defects and induced voltage contrast in SEM studies of bare SiO2Si systems
|
Knott, K.F.
|
|
1988
|
31 |
12 |
p. 1667-1674
8 p.
|
artikel
|
| 11 |
List of contents and author index
|
|
|
1988
|
31 |
12 |
p. iii-xxiv
nvt p.
|
artikel
|
| 12 |
New empirical relation for MOSFET 1 ƒ noise unified over linear and saturation regions
|
Mutoh, Nobuhiko
|
|
1988
|
31 |
12 |
p. 1675-1680
6 p.
|
artikel
|
| 13 |
1 ƒ noise in GaAs ion-implanted resistance structures
|
Belan, J.
|
|
1988
|
31 |
12 |
p. 1711-1713
3 p.
|
artikel
|
| 14 |
Nonlinearity in hall devices and its compensation
|
Popović, R.S.
|
|
1988
|
31 |
12 |
p. 1681-1688
8 p.
|
artikel
|
| 15 |
Response to “comments on modelling of a depletion-mode MOSFET”
|
Parikh, C.D.
|
|
1988
|
31 |
12 |
p. 1749-
1 p.
|
artikel
|
| 16 |
The hot electron effect in double heterojunction bipolar transistors: Theory and experiment
|
Chen, Chung-Zen
|
|
1988
|
31 |
12 |
p. 1653-1656
4 p.
|
artikel
|
| 17 |
The influence of annealing on the capacitance-voltage characteristics of metal/SIPOS/silicon capacitors
|
Burte, Edmund P.
|
|
1988
|
31 |
12 |
p. 1663-1666
4 p.
|
artikel
|
| 18 |
The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C
|
Shacham-Diamand, Yosi
|
|
1988
|
31 |
12 |
p. 1743-1745
3 p.
|
artikel
|
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