| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A generalized algorithm for CMOS circuit delay, power, and area optimization
|
Lai, F.S.
|
|
1988
|
31 |
11 |
p. 1619-1627
9 p.
|
artikel
|
| 2 |
Analysis of charge-collection efficiency measurements in Schottky diodes
|
Donolato, C.
|
|
1988
|
31 |
11 |
p. 1587-1594
8 p.
|
artikel
|
| 3 |
Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation
|
Shabde, Sunil
|
|
1988
|
31 |
11 |
p. 1603-1610
8 p.
|
artikel
|
| 4 |
A novel low resistive Metal-Insulator-Semiconductor (MIS) inversion layer solar cell structure
|
Chattopadhyay, P.
|
|
1988
|
31 |
11 |
p. 1641-1643
3 p.
|
artikel
|
| 5 |
A simple C-V method to extract the correct equivalent box and the Gaussian representations of the channel-doping profile and the flat-band voltage of BC-MOSFETs
|
Karmalkar, S.
|
|
1988
|
31 |
11 |
p. 1567-1572
6 p.
|
artikel
|
| 6 |
A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers
|
Van Meirhaeghe, R.L.
|
|
1988
|
31 |
11 |
p. 1629-1634
6 p.
|
artikel
|
| 7 |
AuGeNi ohmic contacts to n-InP for FET applications
|
Del Alamo, Jesús A.
|
|
1988
|
31 |
11 |
p. 1635-1639
5 p.
|
artikel
|
| 8 |
Characterization of reverse recovery transient behavior of bipolar transistors for emitter parameters determination
|
Liou, J.J.
|
|
1988
|
31 |
11 |
p. 1595-1601
7 p.
|
artikel
|
| 9 |
Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle
|
Söderbärg, A.
|
|
1988
|
31 |
11 |
p. 1583-1585
3 p.
|
artikel
|
| 10 |
Editorial - software survey section
|
|
|
1988
|
31 |
11 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors
|
Misra, D.
|
|
1988
|
31 |
11 |
p. 1647-1649
3 p.
|
artikel
|
| 12 |
Impurity redistribution during sublimation in UHV
|
Oven, R.
|
|
1988
|
31 |
11 |
p. 1650-1652
3 p.
|
artikel
|
| 13 |
Numerical study of an AlGaAs/GaAs heterostructure bipolar transistor: Emitter design and compositional grading
|
Meyyappan, M.
|
|
1988
|
31 |
11 |
p. 1611-1618
8 p.
|
artikel
|
| 14 |
Parameter extraction method for inhomogeneous MOSFETs locally damaged by hot carrier injection
|
Haddara, Hisham S.
|
|
1988
|
31 |
11 |
p. 1573-1581
9 p.
|
artikel
|
| 15 |
Silicon bipolar transistors with negative and positive current gain temperature dependence and output conductance on the same monolithic chip
|
Hébert, François
|
|
1988
|
31 |
11 |
p. 1644-1646
3 p.
|
artikel
|
| 16 |
Tradeoff between cutoff frequency and breakdown voltage for power MOSFETs
|
Miyamoto, Masafumi
|
|
1988
|
31 |
11 |
p. 1563-1566
4 p.
|
artikel
|
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