| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
|
Hefner Jr, Allen R.
|
|
1988
|
31 |
10 |
p. 1513-1532
20 p.
|
artikel
|
| 2 |
A two-dimensional model for emitter-base junction capacitance of bipolar transistors
|
Liou, J.J.
|
|
1988
|
31 |
10 |
p. 1541-1549
9 p.
|
artikel
|
| 3 |
A V-groove emitter self-aligned bipolar technology
|
|
|
1988
|
31 |
10 |
p. 1558-1560
3 p.
|
artikel
|
| 4 |
Characterization and analysis of drain-stress induced hot-carrier effects on NMOSFETs
|
Teng, Ker-Wen
|
|
1988
|
31 |
10 |
p. 1533-1536
4 p.
|
artikel
|
| 5 |
Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films
|
Lee, S.K.
|
|
1988
|
31 |
10 |
p. 1501-1503
3 p.
|
artikel
|
| 6 |
Electrode parasitic capacitances in self-aligned and deep-recessed GaAs MESFETs
|
Goel, A.K.
|
|
1988
|
31 |
10 |
p. 1471-1476
6 p.
|
artikel
|
| 7 |
Influence of silicon-sapphire interface defects on SOS MESFET behavior
|
Nylander, J.O.
|
|
1988
|
31 |
10 |
p. 1493-1496
4 p.
|
artikel
|
| 8 |
On the nonequilibrium carrier density equations for highly doped devices and heterostructures
|
Marshak, Alan H.
|
|
1988
|
31 |
10 |
p. 1551-1553
3 p.
|
artikel
|
| 9 |
On the photoemission from ultrathin films of n-Ge
|
Ghatak, K.P.
|
|
1988
|
31 |
10 |
p. 1561-1562
2 p.
|
artikel
|
| 10 |
Perspectives of CdS-Cu2S solar cells at high levels excitations
|
Vasilyevsky, D.L.
|
|
1988
|
31 |
10 |
p. 1505-1507
3 p.
|
artikel
|
| 11 |
Reliability study on rapid thermal processed metal-oxide-semiconductor field effect transistors
|
Lee, S.K.
|
|
1988
|
31 |
10 |
p. 1509-1512
4 p.
|
artikel
|
| 12 |
Software survey section
|
|
|
1988
|
31 |
10 |
p. I-III
nvt p.
|
artikel
|
| 13 |
Space charge effect produced by dopant diffusion
|
Buonomo, A.
|
|
1988
|
31 |
10 |
p. 1555-1557
3 p.
|
artikel
|
| 14 |
The foundation of a charge-sheet model for the thin-film MOSFET
|
Ortiz-Conde, A.
|
|
1988
|
31 |
10 |
p. 1497-1500
4 p.
|
artikel
|
| 15 |
Theory of quasi-diode operation of reversely switched dinistors
|
Gorbatyuk, A.V.
|
|
1988
|
31 |
10 |
p. 1483-1491
9 p.
|
artikel
|
| 16 |
Trap centers in cuprous oxide
|
Papadimitriou, L.
|
|
1988
|
31 |
10 |
p. 1477-1482
6 p.
|
artikel
|
| 17 |
Ytterbium metal-insulator-semiconductor contacts to indium phosphide
|
Reinhardt, K.C.
|
|
1988
|
31 |
10 |
p. 1537-1539
3 p.
|
artikel
|
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