| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acceptor states at the SiSiO2 int0erface generated by UV and their effect on electron mobility
|
Kassabov, J.
|
|
1988
|
31 |
1 |
p. 49-51
3 p.
|
artikel
|
| 2 |
Analysis of high efficiency back point contact silicon solar cells
|
Luque, Antonio
|
|
1988
|
31 |
1 |
p. 65-79
15 p.
|
artikel
|
| 3 |
An efficient smoothing algorithm for spreading resistance calculations
|
Clarysse, T.
|
|
1988
|
31 |
1 |
p. 53-63
11 p.
|
artikel
|
| 4 |
A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon
|
Sasaki, Y.
|
|
1988
|
31 |
1 |
p. 5-12
8 p.
|
artikel
|
| 5 |
A new infrared avalanche photodiode for long distance fiber optic communication
|
Chakrabarti, P.
|
|
1988
|
31 |
1 |
p. 1-3
3 p.
|
artikel
|
| 6 |
A simple high-frequency characterization of a three-phase CCD by controlled free-charge transfer
|
Narayanan, L.Shankar
|
|
1988
|
31 |
1 |
p. 121-123
3 p.
|
artikel
|
| 7 |
Bulk levels and interface calculations for narrow band-gap semiconductors
|
Bloom, I.
|
|
1988
|
31 |
1 |
p. 17-25
9 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
1988
|
31 |
1 |
p. IFC-
1 p.
|
artikel
|
| 9 |
Effect of MS contact on the electrical behaviour of solar cells
|
Zekry, Z.
|
|
1988
|
31 |
1 |
p. 91-97
7 p.
|
artikel
|
| 10 |
Electrical properties of Fe-doped semi-insulating InP after proton bombardment and annealing
|
Woodhouse, J.D.
|
|
1988
|
31 |
1 |
p. 13-16
4 p.
|
artikel
|
| 11 |
High-field drift velocity of electrons in silicon inversion layers
|
Modelli, A.
|
|
1988
|
31 |
1 |
p. 99-104
6 p.
|
artikel
|
| 12 |
Incompatibility of requirements for optimizing short channel behaviour and long term stability in MOSFETs
|
Bauer, F.
|
|
1988
|
31 |
1 |
p. 27-33
7 p.
|
artikel
|
| 13 |
Influence of the interface and of the channel volume on 1/ƒ noise of MOS transistors biased in the linear region at strong inversion
|
Grabowski, Franciszek
|
|
1988
|
31 |
1 |
p. 115-120
6 p.
|
artikel
|
| 14 |
Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs
|
Canfield, P.
|
|
1988
|
31 |
1 |
p. 123-125
3 p.
|
artikel
|
| 15 |
Modelling of ohmic MOSFET operation at very low temperature
|
Ghibaudo, G.
|
|
1988
|
31 |
1 |
p. 105-108
4 p.
|
artikel
|
| 16 |
Non-quasi-static capacitance of p/n junction space-charge regions
|
Liou, J.J.
|
|
1988
|
31 |
1 |
p. 81-86
6 p.
|
artikel
|
| 17 |
Schottky diodes with high series resistance: A simple method of determining the barrier heights
|
Brutscher, N.
|
|
1988
|
31 |
1 |
p. 87-89
3 p.
|
artikel
|
| 18 |
Software survey section
|
|
|
1988
|
31 |
1 |
p. I-III
nvt p.
|
artikel
|
| 19 |
The effects of thermal silicidation of the current transport characteristics of Ti/〉111〈Si Schottky-barrier contacts
|
Tseng, Hsun-Hua
|
|
1988
|
31 |
1 |
p. 35-44
10 p.
|
artikel
|
| 20 |
The ESFET—An evaporated chemical-sensing field-effect transistor
|
Alvi, Nadeem S.
|
|
1988
|
31 |
1 |
p. 45-48
4 p.
|
artikel
|
| 21 |
The PdZn system for ohmic contacts to p-type GaP
|
Tan Fu Lei,
|
|
1988
|
31 |
1 |
p. 109-113
5 p.
|
artikel
|
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