| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical solutions for high-dose shallow arsenic profiles in silicon
|
Ghezzo, M.
|
|
1985
|
28 |
9 |
p. 909-911
3 p.
|
artikel
|
| 2 |
A p-channel MESFET on silicon using an erbium gate
|
Bohlin, K.
|
|
1985
|
28 |
9 |
p. 913-915
3 p.
|
artikel
|
| 3 |
A structure-oriented model for determining the substrate spreading resistance in bulk CMOS latch-up paths and its application in holding current prediction
|
Chen, Ming-Jer
|
|
1985
|
28 |
9 |
p. 855-866
12 p.
|
artikel
|
| 4 |
Blue electroluminescence in reverse-biased ZnS(Zn,Al) diodes
|
Bryant, F.J.
|
|
1985
|
28 |
9 |
p. 847-854
8 p.
|
artikel
|
| 5 |
Carrier diffusion effects in the time-response of a fast photodiode
|
Ripamonti, G.
|
|
1985
|
28 |
9 |
p. 925-931
7 p.
|
artikel
|
| 6 |
Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon
|
Cembali, F.
|
|
1985
|
28 |
9 |
p. 933-943
11 p.
|
artikel
|
| 7 |
Excess base noise in the bipolar junction transistor
|
Rucker, L.M.
|
|
1985
|
28 |
9 |
p. 875-876
2 p.
|
artikel
|
| 8 |
GaP electron mobility empirically related to donor concentration and temperature
|
Weichold, M.H.
|
|
1985
|
28 |
9 |
p. 957-958
2 p.
|
artikel
|
| 9 |
Lateral profiling of interface states along the sidewalls of channel-stop isolation
|
Hawkins, G.A.
|
|
1985
|
28 |
9 |
p. 945-956
12 p.
|
artikel
|
| 10 |
Mixing of nickel and silicon by incoherent-light-pulse annealing
|
Gecim, H.S.
|
|
1985
|
28 |
9 |
p. 903-907
5 p.
|
artikel
|
| 11 |
Mobility models for the I–V characteristics of buried-channel MOSFETs
|
Wu, Ching-Yuan
|
|
1985
|
28 |
9 |
p. 917-923
7 p.
|
artikel
|
| 12 |
Oxidation and stress relief in air at room temperature of amorphous silicon hydrogenated in a glow discharge
|
Yokota, Katsuhiro
|
|
1985
|
28 |
9 |
p. 893-901
9 p.
|
artikel
|
| 13 |
Schottky diode design for low-voltage rectification
|
Kawakami, Takashi
|
|
1985
|
28 |
9 |
p. 885-891
7 p.
|
artikel
|
| 14 |
Software survey section
|
|
|
1985
|
28 |
9 |
p. I-III
nvt p.
|
artikel
|
| 15 |
The monos memory transitor: Application in a radiation-hard nonvolatile RAM
|
Brown, W.D.
|
|
1985
|
28 |
9 |
p. 877-884
8 p.
|
artikel
|
| 16 |
Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures
|
Nannini, A.
|
|
1985
|
28 |
9 |
p. 867-873
7 p.
|
artikel
|
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