| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A critical study of the effectiveness of the single and double exponential models for I–V characterization of solar cells
|
Charles, Jean-Pierre
|
|
1985
|
28 |
8 |
p. 807-820
14 p.
|
artikel
|
| 2 |
Amorphous-crystalline silicon isotype heterojunction: Electrostatic potential distribution and C(V) curves
|
Rubinelli, F.
|
|
1985
|
28 |
8 |
p. 741-750
10 p.
|
artikel
|
| 3 |
Analytical calculation of the quantum-mechanical transmission coefficient for a triangular, planar-doped potential barrier
|
Christodoulides, D.N.
|
|
1985
|
28 |
8 |
p. 821-822
2 p.
|
artikel
|
| 4 |
Analytical relations for determining the base transit times and forward-biased junction capacitances of bipolar transistors
|
Lee, S.W.
|
|
1985
|
28 |
8 |
p. 767-773
7 p.
|
artikel
|
| 5 |
A new method for computer-aided optimization of solar cell structures
|
Chen, Ming-Jer
|
|
1985
|
28 |
8 |
p. 751-761
11 p.
|
artikel
|
| 6 |
A new set of semiconductor equations for computer simulation of submicron devices
|
Wang, Cheng T.
|
|
1985
|
28 |
8 |
p. 783-788
6 p.
|
artikel
|
| 7 |
A precise scaling length for depleted regions
|
Schrimpf, R.D.
|
|
1985
|
28 |
8 |
p. 779-782
4 p.
|
artikel
|
| 8 |
Capacitance-voltage characteristics of Semiconductor-Insulator-Semiconductor (SIS) structure
|
Nagai, Kiyoko
|
|
1985
|
28 |
8 |
p. 789-798
10 p.
|
artikel
|
| 9 |
Conductivity and noise in thin films of nonhydrogenated amorphous silicon in the hopping regime
|
D'Amico, A.
|
|
1985
|
28 |
8 |
p. 837-844
8 p.
|
artikel
|
| 10 |
Editorial—software survey section
|
|
|
1985
|
28 |
8 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Electron transient response and impact-ionized plasma instability in GaAs at very high electric fields
|
Mickevičius, R.
|
|
1985
|
28 |
8 |
p. 799-805
7 p.
|
artikel
|
| 12 |
Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs
|
Gupta, R.P.
|
|
1985
|
28 |
8 |
p. 823-830
8 p.
|
artikel
|
| 13 |
Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices
|
Chu-Hao,
|
|
1985
|
28 |
8 |
p. 733-740
8 p.
|
artikel
|
| 14 |
On the barrier height of a metal-semiconductor contact with a thin interfacial layer
|
Chattopadhyay, P.
|
|
1985
|
28 |
8 |
p. 831-836
6 p.
|
artikel
|
| 15 |
Schottky barrier height of sputtered HfN contacts on silicon
|
Pan, E.T.-S.
|
|
1985
|
28 |
8 |
p. 775-777
3 p.
|
artikel
|
| 16 |
Some simple observations on the bandgap narrowing in heavily doped silicon
|
Dhariwal, S.R.
|
|
1985
|
28 |
8 |
p. 845-846
2 p.
|
artikel
|
| 17 |
Static dielectric constant of heavily doped semiconductors
|
Dhar, S.
|
|
1985
|
28 |
8 |
p. 763-766
4 p.
|
artikel
|
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