| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A review of ohmic and rectifying contacts on cadmium telluride
|
Ponpon, J.P.
|
|
1985
|
28 |
7 |
p. 689-706
18 p.
|
artikel
|
| 2 |
A time- and temperature-dependent two-dimensional simulation of GTO turnoff process II—Inductive load case
|
Nakagawa, Akio
|
|
1985
|
28 |
7 |
p. 677-687
11 p.
|
artikel
|
| 3 |
Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes
|
Elfsten, B.
|
|
1985
|
28 |
7 |
p. 721-727
7 p.
|
artikel
|
| 4 |
Compensating effects in electromigration kinetics
|
Schwarz, J.A.
|
|
1985
|
28 |
7 |
p. 669-675
7 p.
|
artikel
|
| 5 |
Editorial—Software survey section
|
|
|
1985
|
28 |
7 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Electrical activity of silver in GaAs
|
Adegboyega, G.A.
|
|
1985
|
28 |
7 |
p. 729-731
3 p.
|
artikel
|
| 7 |
Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation
|
Ling, C.H.
|
|
1985
|
28 |
7 |
p. 653-658
6 p.
|
artikel
|
| 8 |
Hafnium-ntype silicon Schottky barriers
|
Radziszewski, A.
|
|
1985
|
28 |
7 |
p. 707-709
3 p.
|
artikel
|
| 9 |
Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions
|
Nissan-Cohen, Y.
|
|
1985
|
28 |
7 |
p. 717-720
4 p.
|
artikel
|
| 10 |
Numerical analysis of MOS magnetic field sensors
|
Popović, R.S.
|
|
1985
|
28 |
7 |
p. 711-716
6 p.
|
artikel
|
| 11 |
Parasitic source and drain resistance in high-electron-mobility transistors
|
Lee, S.J.
|
|
1985
|
28 |
7 |
p. 659-668
10 p.
|
artikel
|
| 12 |
The measurement of the diffusion length and the recombination velocity at the grain boundary in polycrystalline solar cells by the SEM-EBIC technique
|
Romanowski, Andrzej
|
|
1985
|
28 |
7 |
p. 645-652
8 p.
|
artikel
|
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