| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An anomalous behavior in low-frequency GaAs resistor noise
|
Hellums, J.R.
|
|
1985
|
28 |
6 |
p. 549-550
2 p.
|
artikel
|
| 2 |
A survey of new bipolar amplifying and negative-resistance devices
|
Zólomy, Imre
|
|
1985
|
28 |
6 |
p. 537-547
11 p.
|
artikel
|
| 3 |
Channel-width dependence of the punchthrough characteristics in n-channel MOSFETS
|
Shabde, Sunil N.
|
|
1985
|
28 |
6 |
p. 641-642
2 p.
|
artikel
|
| 4 |
Comparison of threshold modulation in narrow MOSFETs with different isolation structures
|
Lai, P.T.
|
|
1985
|
28 |
6 |
p. 551-554
4 p.
|
artikel
|
| 5 |
Constant capacitance DLTS circuit for measuring high purity semiconductors
|
DeJule, R.Y.
|
|
1985
|
28 |
6 |
p. 639-641
3 p.
|
artikel
|
| 6 |
Deep level profile studies in chromium radiotracer diffused MOCVD GaAs
|
Ke, W.K.
|
|
1985
|
28 |
6 |
p. 611-615
5 p.
|
artikel
|
| 7 |
Doping effects on the band structure in n-type silicon at 300 K
|
Van Cong, H.
|
|
1985
|
28 |
6 |
p. 587-595
9 p.
|
artikel
|
| 8 |
Electrical behavior of double heterojunction NpN GaAlAs/GaAs/GaAlAs bipolr transistors
|
Bailbe, J.P.
|
|
1985
|
28 |
6 |
p. 627-638
12 p.
|
artikel
|
| 9 |
Electromigration threshold in aluminum films
|
Schreiber, H.-U.
|
|
1985
|
28 |
6 |
p. 617-626
10 p.
|
artikel
|
| 10 |
Erratum
|
|
|
1985
|
28 |
6 |
p. 643-
1 p.
|
artikel
|
| 11 |
Increasing the current-handling capability of TIL GTO thyristors up to its limits—I. Analysis and design
|
Silard, A.
|
|
1985
|
28 |
6 |
p. 561-570
10 p.
|
artikel
|
| 12 |
Increasing the current-handling capability of TIL GTO thyristors up to its limits—II. Experimental
|
Silard, A.
|
|
1985
|
28 |
6 |
p. 571-577
7 p.
|
artikel
|
| 13 |
Introducing dependency into IC yield models
|
Flack, Virginia Foard
|
|
1985
|
28 |
6 |
p. 555-559
5 p.
|
artikel
|
| 14 |
Ohmic contacts on n- and p-layers of GaAs using laser-induced diffusion
|
Kräutle, H.
|
|
1985
|
28 |
6 |
p. 601-603
3 p.
|
artikel
|
| 15 |
Power drift step recovery diodes (DSRD)
|
Grekhov, I.V.
|
|
1985
|
28 |
6 |
p. 597-599
3 p.
|
artikel
|
| 16 |
Software survey section
|
|
|
1985
|
28 |
6 |
p. I-III
nvt p.
|
artikel
|
| 17 |
Spectral response inhomogeneities in large-area solar cells
|
Sastry, O.S.
|
|
1985
|
28 |
6 |
p. 579-585
7 p.
|
artikel
|
| 18 |
Transconductance degradation in VLSI devices
|
Akers, Lex A.
|
|
1985
|
28 |
6 |
p. 605-609
5 p.
|
artikel
|
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